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    TRANSISTOR 2274 Search Results

    TRANSISTOR 2274 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2274 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


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    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    2SC2078

    Abstract: 2sc2078 amplifier 2SC2078 Datasheet 2sc2078 Transistor NPN rf transistor RF POWER TRANSISTOR NPN 2sc2078 2sc207827mhz
    Text: Ordering number:EN462E NPN Epitaxial Planar Silicon Transistor 2SC2078 27MHz RF Power Amplifier Applications Package Dimensions unit:mm 2010C [2SC2078] 1 : Base 2 : Collector 3 : Emitter JEDEC : TO-220AB EIAJ : SC-46 Specifications Absolute Maximum Ratings at Ta = 25˚C


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    EN462E 2SC2078 27MHz 2010C 2SC2078] O-220AB SC-46 2SC2078 2sc2078 amplifier 2SC2078 Datasheet 2sc2078 Transistor NPN rf transistor RF POWER TRANSISTOR NPN 2sc2078 2sc207827mhz PDF

    27mhz rf amplifier NPN transistor to220

    Abstract: 2SC2078 RF POWER TRANSISTOR NPN 2sc2078 2sc2078 amplifier 2sc2078 Transistor 27mhz rf amplifier 27mhz rf amplifier NPN transistor ITR05108 ITR05109 ITR05110
    Text: Ordering number:ENN462E NPN Epitaxial Planar Silicon Transistor 2SC2078 27MHz RF Power Amplifier Applications Package Dimensions unit:mm 2010C [2SC2078] 10.2 3.6 4.5 5.1 18.0 15.1 6.3 2.7 1.3 14.0 5.6 1.2 0.8 2 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220


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    ENN462E 2SC2078 27MHz 2010C 2SC2078] O-220 27mhz rf amplifier NPN transistor to220 2SC2078 RF POWER TRANSISTOR NPN 2sc2078 2sc2078 amplifier 2sc2078 Transistor 27mhz rf amplifier 27mhz rf amplifier NPN transistor ITR05108 ITR05109 ITR05110 PDF

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


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    1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor PDF

    transistor 2SC2078

    Abstract: 2sc2078 2sc2078 Transistor 2SC207S
    Text: Ordering number : EN462E N0.462E 2SC2078 NPN Epitaxial Planar Silicon Transistor SANYO 27MHz RF Power Amp Applications Absolute Maxima» Ratings at Ta=25°C Colleetor-to-Base Voltage CBO Collector-to-Emitter Voltage VCER Emitter-to-Base Voltage VEB0 Collector Current


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    EN462E 2SC2078 27MHz 150fl 2SC2078 2SC207S transistor 2SC2078 2sc2078 Transistor 2SC207S PDF

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp PDF

    th 2267

    Abstract: No abstract text available
    Text: SIEMENS SMBT 3906S PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SMBT 3904S (NPN)


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    3906S 100mA 3904S Q62702-A1202 OT-363 flE35b05 Q1225S2 th 2267 PDF

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PNP Silicon C0LLE CT0R 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -100 Vdc Collector-Emitter Voltage VCER CASE 318-08, STYLE 6 S O T-23 TO-236AB Vdc -110 RBe = 10k£l


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    O-236AB) PDF

    2SC2078

    Abstract: 2sc2078 Transistor RF POWER TRANSISTOR NPN 2sc2078 2SC207 68p33 2sc207827mhz
    Text: O rde rin g n u m b e r :EN 462E 2SC2078 NPN Epitaxial Planar Silicon Transistor 2 7MHz RF Power Amp Applications Absolute Haximum Ratings at Ta=25°C Collector-to-Base Voltage CBO Collector-to-Emitter Voltage VCER Emitter-to-Base Voltage VEBO Collector Current


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    2SC2078 27MHz 2SC2078 2sc2078 Transistor RF POWER TRANSISTOR NPN 2sc2078 2SC207 68p33 2sc207827mhz PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PNP Silicon BASE MAXIMUM RATINGS Rating Symbol Value Unit C olfector-E m itter Voltage VCEO -1 0 0 Vdc C ollector-E m itter Voltage Rßf= = 10 k li VCER CASE 318-08, STYLE 6 S O T-23 TO-236AB


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    O-236AB) PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRA1000-7L The RF Line UHF P o w er T ran sisto r . , . designed prim arily for wideband, large-signal output and driver am plifier stages to 1000 MHz. 9 dB TO 1000 M Hz 7 WATTS BROADBAND UHF POWER TRANSISTOR • Designed for Class A Linear Power Amplifiers


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    MRA1000-7L Sym15 PDF

    TL 2272

    Abstract: TL 2272 R sft 43 2SA993 138D 2SA1021 2SA982 2SA984 2SA985 2SC2262
    Text: - 5 - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    175MHz 18dBm) /-175MHz, 26dBm) 175MHz, -34dBm) 28MHz, 200/unit TL 2272 TL 2272 R sft 43 2SA993 138D 2SA1021 2SA982 2SA984 2SA985 2SC2262 PDF

    Untitled

    Abstract: No abstract text available
    Text: • b S H IÔ E ? M IT S U B IS H I 0G 15125 D G T L 31S *1 1 1 7 3 MITSUBISHI BIPOLAR DIGITAL ICs M 54584P L O G IC 8-UNIT 350mA TRANSISTOR ARRAY DESCRIPTION The M54584P, 8-channel sink driver, consists of 16 NPN PIN CONFIGURATION (TOP VIEW) transistors connected to form high current gain driver pairs


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    54584P 350mA M54584P, 350mA a-75TC PDF

    2sa983

    Abstract: 2SC1844 2sc2275 2sc2562 138B 138D 2SC1845 2SC2274 2SC2277 W-25
    Text: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    2SC2337 2SC2331 2SC2334 2SC2344 2SC2562 2sa983 2SC1844 2sc2275 138B 138D 2SC1845 2SC2274 2SC2277 W-25 PDF

    NE99532

    Abstract: 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563
    Text: NEC/ CALIFORNIA 1SE D bMs?m4 D D o m a i a T IM S - T - it- t r NEC NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES T'3h21 FEATURES DESCRIPTION AND APPLICATIONS • H IG H G A IN B A N D W ID T H P R O D U C T : f r = 7 G H z The NE856 series of NPN epitaxial silicon transistors Is de­


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    NE856 NE99532 NE32700 NE32702 NE32708 NE32740A NE32740B 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563 PDF

    SX672

    Abstract: EE-SX670 EE-SX671 OMRON SX671 EE-SX472 sx671
    Text: omRon Photomicrosensor RS 219-2274 RS 219-2280 RS 219-2296 RS 219-2303 SX670 SX671 SX672 SX673 EE-SX670/470 Photomicrosensor with 100-mA Switching Capacity that can be Built into Equipment • Standard, L-shaped, T-shaped, and close mount­ ing models available.


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    100-mA SX670 SX671 SX672 SX673 EE-SX670/470 EE-SX670 EE-SX671 OMRON SX671 EE-SX472 PDF

    AN-2274

    Abstract: AN-2497 Transistor 2274 cs 1694 C2470 C2471 C2472 C2473 DG-1694 circuit psu
    Text: Key RDFC Application Circuit Measurements Application Note AN-2274 INTRODUCTION This document describes tests for checking certain key aspects of the electrical design and performance of Resonant Discontinuous Forward Converters RDFCs implemented with CamSemi’s C2470 family of


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    AN-2274 C2470 C2471, C2472 C2473) AN-2274-0904 07-Apr-2009 AN-2274 AN-2497 Transistor 2274 cs 1694 C2471 C2473 DG-1694 circuit psu PDF

    D1276A

    Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
    Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463


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    2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A PDF

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


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    DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148 PDF

    MAX9110

    Abstract: MAX9112 MAX9159 MAX9159ESA SN65LVDS9637 "DUAL LVDS"
    Text: 19-2274; Rev 0; 1/02 Dual LVDS Line Receiver Features ♦ Pin Compatible with SN65LVDS9637 ♦ Fail-Safe Circuit Sets Output High for Undriven Inputs ♦ Conforms to ANSI TIA/EIA-644 Standard ♦ Single 3.3V Supply ♦ Designed for Data Rates up to 400Mbps


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    SN65LVDS9637 TIA/EIA-644 400Mbps 100mV 200MHz MAX9159ESA MAX9159 MAX9110 MAX9112 MAX9159 MAX9159ESA SN65LVDS9637 "DUAL LVDS" PDF