Untitled
Abstract: No abstract text available
Text: SSM6P49NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P49NU Power Management Switch Applications A 2.0 0.1 Common 0 0.05 0.13 *BOTTOM VIEW Unit Drain-Source voltage VDSS −20 V Gate-Source voltage VGSS ±12 V ID −4.0 DC Drain current
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SSM6P49NU
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Untitled
Abstract: No abstract text available
Text: ST2309ES P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST2309ES is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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ST2309ES
ST2309ES
OT-23
-60V/-3
160m-ohm
-60V/-1
200ted)
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Untitled
Abstract: No abstract text available
Text: ST3421SRG P Channel Enhancement Mode MOSFET -5.0A DESCRIPTION ST3421SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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ST3421SRG
ST3421SRG
OT-23
-60V/-5
150m-ohm
-60V/-2
185m-ohm
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SSM6P49NU
Abstract: Q2S13 1PD2
Text: SSM6P49NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P49NU Power Management Switch Applications 1.8V drive Low ON-resistance: RDS on = 157 mΩ (max) (@VGS = -1.8 V) RDS(on) = 76 mΩ (max) (@VGS = -2.5 V) RDS(on) = 56 mΩ (max) (@VGS = -4.5 V)
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SSM6P49NU
SSM6P49NU
Q2S13
1PD2
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Untitled
Abstract: No abstract text available
Text: SSM6P49NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P49NU Power Management Switch Applications 1.8V drive Low ON-resistance: RDS on = 157 mΩ (max) (@VGS = -1.8 V) RDS(on) = 76 mΩ (max) (@VGS = -2.5 V) RDS(on) = 56 mΩ (max) (@VGS = -4.5 V)
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SSM6P49NU
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Untitled
Abstract: No abstract text available
Text: ST2341SRG P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for
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ST2341SRG
ST2341SRG
OT-23
-20V/-3
-20V/-2
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sem 2005
Abstract: PA102FMG p-Channel Logic Level Enhancement Mode sot-23 niko-sem transistor 2A SOT23 SOT-23 2A
Text: P-Channel Logic Level Enhancement NIKO-SEM PA102FMG Mode Field Effect Transistor Preliminary SOT-23 Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20 118mΩ -3A 1 :GATE 2 :DRAIN 3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
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PA102FMG
OT-23
Mar-25-2005
sem 2005
PA102FMG
p-Channel Logic Level Enhancement Mode sot-23
niko-sem
transistor 2A SOT23
SOT-23 2A
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SEM 2004
Abstract: SOT-23 2A PA102FM 2A sot-23 p-Channel Logic Level Enhancement Mode sot23 CODE 02 niko-sem
Text: P-Channel Logic Level Enhancement NIKO-SEM PA102FM Mode Field Effect Transistor Preliminary SOT-23 D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20 118mΩ -3A 1 :GATE 2 :DRAIN 3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
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PA102FM
OT-23
Nov-02-2004
SEM 2004
SOT-23 2A
PA102FM
2A sot-23
p-Channel Logic Level Enhancement Mode
sot23 CODE 02
niko-sem
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Motorola Application Note AN-531
Abstract: MC1596 frequency doubler circuit MC1596 AN531 motorola Motorola Mc 1596 transistor 21Y balanced modulator MC1596 Motorola MC15 MC1596 frequency doubler MCI transformers
Text: AN-531 Application Note highly versatile block. 1n this co~munications note, building both theoretical practical information designer in the use of this part. tions include and suppressed modulators carrier for the previously forms; frequencv double and are given to aid the
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AN-531
MC1596
MC1596.
Motorola Application Note AN-531
MC1596 frequency doubler circuit
AN531 motorola
Motorola Mc 1596
transistor 21Y
balanced modulator MC1596
Motorola MC15
MC1596 frequency doubler
MCI transformers
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MARKING CODE 19AA
Abstract: transistor 21Y mrc 12d VDD12A MARKING 1AB AMD-8151 acbel power supply AAD20 marking 23ab 24y transistor
Text: AMD-8151TM AGP Tunnel Data Sheet 24888 Rev 3.02 - June 17, 2003 Cover page TM Preliminary AMD-8151 1 HyperTransportTM AGP3.0 Graphics Tunnel Data Sheet Overview The AMD-8151TM HyperTransportTM AGP3.0 Graphics Tunnel referred to as the IC in this document is a
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AMD-8151TM
AMD-8151
MARKING CODE 19AA
transistor 21Y
mrc 12d
VDD12A
MARKING 1AB
AMD-8151
acbel power supply
AAD20
marking 23ab
24y transistor
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power supply Acbel
Abstract: marking 23ab transistor code 21y 14AD VDD12B transistor 21Y 22AB MARKING 1AB AMD-8151 acbel power supply
Text: AMD-8151TM AGP Tunnel Data Sheet 24888 Rev 3.03 - July 12, 2004 TM AMD-8151 Cover page HyperTransportTM AGP3.0 Graphics Tunnel Data Sheet 1 Overview The AMD-8151TM HyperTransportTM AGP3.0 Graphics Tunnel referred to as the IC in this document is a HyperTransport technology (referred to as link in this document) tunnel developed by AMD that provides an
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AMD-8151TM
AMD-8151
power supply Acbel
marking 23ab
transistor code 21y
14AD
VDD12B
transistor 21Y
22AB
MARKING 1AB
AMD-8151
acbel power supply
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First line 7aa ed tms 3874 9v voltage regulator
Abstract: RS8250EBGC tms 3874 9v voltage regulator code 9y mrd 14b R7173-11 18AF d725 11AF PE-68508
Text: R O C K W E L L Network access S E M I C O N D U C T O R S Y S T E M S RS8250/1/2/3/4/5 ATM Physical Interface Devices - ATM PHY datasheet PROVIDING HIGH SPEED MULTIMEDIA CONNECTIONS September 1998 Preliminary Information This document contains information on a product under development. The parametric information contains target
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RS8250/1/2/3/4/5
RS825x
N825xDSA
First line 7aa ed tms 3874 9v voltage regulator
RS8250EBGC
tms 3874
9v voltage regulator code 9y
mrd 14b
R7173-11
18AF
d725
11AF
PE-68508
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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AN-134
transistor c2060
Transistor Shortform Datasheet & Cross References
1N4465
C1906 transistor
Germanium itt
3N58
IN939
MC1230F
2N3866 MOTOROLA
C943 transistor
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SEM 5027A
Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES
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SN7449
Abstract: 54175 SN7401 74L42 SN7437 SN74S40
Text: Ordering Instructions and Mechanical Data INTEGRATED CIRCUITS MECHANICAL DATA ORDERING INSTRUCTIONS Electrical characteristics presented in this catalog, unless otherwise noted, apply for circuit type s listed in the page heading regardless of package. Except for diode arrays, ECL, and MOS devices, the availability of a circuit function in a
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SN15312
SN15325,
SN15370
SN7449
54175
SN7401
74L42
SN7437
SN74S40
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display 7 segmento sm 4105
Abstract: NS_Databook_77 MA1012 MA1002 MM5799 MM5318 MM57109 mm5782n Remote Control Toy Car Receiver IC tx2 MM5871
Text: MOS/LSI DATABOOK NATIONAL SEMICONDUCTOR i Edge Index by Product Family Clocks Counters/Timers Electronic Organ Circuits TV Circuits Analog to Digital A /D Converters Communications/CB Radio Circuits Watches Calculators Controller Oriented Processor Systems (COPS)
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MM5309
MM5311
J28592
IM-CP70M17/PRINTED
display 7 segmento sm 4105
NS_Databook_77
MA1012
MA1002
MM5799
MM5318
MM57109
mm5782n
Remote Control Toy Car Receiver IC tx2
MM5871
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Sii 9573
Abstract: transistor 21Y S-8252 ed 7aa dude hx 630
Text: R O C K W E L L S E M I C O N D U C T O R S Y S T E M S access RS8250/1/2/3/4/5 ATM Physical Interface Devices - ATM PHY *Ü O ¥ ¡8 S N & B -, Rockwell September 1998 fô i S y s iiîs Preliminary Information This do cum e nt contains in fo rm a tio n on a pro du ct under developm ent. The param etric in fo rm a tio n contains target
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RS8250/1/2/3/4/5
RS8250/1/2/3/4/5
RS825x
N825xDSA
Sii 9573
transistor 21Y
S-8252
ed 7aa
dude
hx 630
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