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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: ST2309ES P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST2309ES is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	ST2309ES ST2309ES OT-23 -60V/-3 160m-ohm -60V/-1 200ted)	PDF

Catalog Datasheet

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Untitled

Abstract: No abstract text available
Text: ST2309ES P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST2309ES is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

Original

ST2309ES ST2309ES OT-23 -60V/-3 160m-ohm -60V/-1 200ted)

PDF