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    TRANSISTOR 200V 20A Search Results

    TRANSISTOR 200V 20A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 200V 20A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP240 Semiconductor Data Sheet July 1999 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		IRFP240 O-247 180i2 PDF

    IRFP240 transistor

    Abstract: No abstract text available
    Text: IRFP240 Data Sheet Title FP2 bt A, 0V, 80 m, 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFP240 IRFP240 transistor PDF

    VQE 22

    Abstract: No abstract text available
    Text: Preliminary Data Sheet PD - 9.1085 International IsHRectifier IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all “tail" losses • Optimized for line frequency operation to 400H z V CES = 1 200V


    OCR Scan     		IRGPH40S O-247AC VQE 22 PDF

    IRFP240

    Abstract: irfp240 transistor TA17422 TB334
    Text: IRFP240 Data Sheet January 2002 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		IRFP240 TA17422. O-247 200opment. IRFP240 irfp240 transistor TA17422 TB334 PDF

    IRFP240

    Abstract: TA17422 TB334
    Text: IRFP240 Data Sheet July 1999 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		IRFP240 TA17422. O-247 IRFP240 TA17422 TB334 PDF

    C1030 transistor

    Abstract: c1036 transistor transistor c1032 c1032 IC of XOR GATE C1030 c1036 c1035 C-1035 C-1032
    Text: International S Rectifier P D - 9.1121A IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • Short circuit rated -10 js @125°C, VGE= 10V V ces = 1 200V {5|js @ VGE = 15V • Switching-ioss rating includes all "tail" losses


    OCR Scan     		IRGPH50KD2 -10jjs C-1035 O-247AC C-1036 C1030 transistor c1036 transistor transistor c1032 c1032 IC of XOR GATE C1030 c1036 c1035 C-1032 PDF

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1 PDF

    1E14

    Abstract: 2E12 2N7295D 2N7295H 2N7295R
    Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK254 D, R, H 2N7295D, 2N7295R 2N7295H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 20A, 250V, RDS(on) = 0.170Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts


    Original     		FRK254 2N7295D, 2N7295R 2N7295H O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD 1E14 2E12 2N7295D 2N7295H 2N7295R PDF

    HARRIS SEMICONDUCTOR APPLICATION NOTES

    Abstract: No abstract text available
    Text: ^ U H a r r is U S E M I C O N D U C T O R FRK254D, FRK254R, F fí K2S4H 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 20A, 250V, RDS on = 0.170Q TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		FRK254D, FRK254R, O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD FRK254H HARRIS SEMICONDUCTOR APPLICATION NOTES PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7295D, 2N7295R 2N72Q5H h a r r is S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK254 D, R, H « jRadiation Hardened December1992 N-Channel Power MOSFETs Package Features • 20A, 250V, RDS(on) = 0.170S2 TO-2Q4AE • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		2N7295D, 2N7295R 2N72Q5H FRK254 r1992 170S2 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    IFRZ44

    Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541


    OCR Scan     		2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N PDF

    Untitled

    Abstract: No abstract text available
    Text: [^ ©yeTT ©attäl « IDevices. Inc. M ED IUM TO HIGH V O LT A G E, HIGH C U R R E N T CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: ► 50,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available


    OCR Scan     		938mm 938mm) 508mm) 700mm) 524mm) 203mm) O-114 10MHz PDF

    1E14

    Abstract: 2E12 FRK254D FRK254H FRK254R
    Text: FRK254D, FRK254R, FRK254H 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 20A, 250V, RDS on = 0.170Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		FRK254D, FRK254R, FRK254H O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD 1E14 2E12 FRK254D FRK254H FRK254R PDF

    LCD TV SMPS circuit

    Abstract: MOSFET 200v 20A n.channel CY63413 laptop lcd inverter Power line load switch for portable dvd china NC7SV158 automatic WATER LEVEL pump CONTROL mosfet triggering circuit for inverter list of P channel power mosfet FQPF18N50
    Text: Fairchild New Product Highlights Bottomless SO-8-packaged MOSFETs 20V to 200V 1 • New Product Highlights Discrete Comprehensive New Product List Analog • r t , Normalized Effective Transient


    Original     		O-263 FDZ2551N/FDZ2552P/FDZ2553N/FDZ2554P FDS6572A/FDS6574A Power247TM, LCD TV SMPS circuit MOSFET 200v 20A n.channel CY63413 laptop lcd inverter Power line load switch for portable dvd china NC7SV158 automatic WATER LEVEL pump CONTROL mosfet triggering circuit for inverter list of P channel power mosfet FQPF18N50 PDF

    Untitled

    Abstract: No abstract text available
    Text: tyvvys / FRK254D, FRK254R, FRK254H S e m ico n d ucto r y 7 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 20A, 250V, RDS on = 0.170S1 TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		FRK254D, FRK254R, FRK254H 170S1 O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD O-204AE PDF

    24V alternator load dump

    Abstract: automotive ignition coil on plug electronic power generator using transistor 24v alternator regulator ic automotive transistor coil ignition 24v vehicle ignition circuits ignition module Controlled Alternator Voltage Regulator 400V-VBEMAX 24V alternator regulator
    Text: Suppression - Automotive Transients Transient Environment The designer of electronic circuits for automotive applications must ensure reliable circuit operation in a severe transient environment. The transients on the automobile power supply range from the severe, high energy, transients generated by the alternator/regulator system to the low-level


    Original     		SS-8766. 24V alternator load dump automotive ignition coil on plug electronic power generator using transistor 24v alternator regulator ic automotive transistor coil ignition 24v vehicle ignition circuits ignition module Controlled Alternator Voltage Regulator 400V-VBEMAX 24V alternator regulator PDF

    Untitled

    Abstract: No abstract text available
    Text: FRK254D, FRK254R, FRK254H 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 20A, 250V, RDS on = 0.170Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		FRK254D, FRK254R, FRK254H O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 2488 2SC3664 i NPN Triple Diffused Planar Darlington Silicon Transistor i 400V/20A Driver Applications SANYO Applications . Induction cookers . High-voltage, high-power switching Features . Fast speed adoption of MBIT process . High breakdown voltage (VCBO=800V)


    OCR Scan     		2SC3664 00V/20A T03PB 3257TA, PDF

    POWER AMPLIFIER CIRCUIT DIAGRAM 4000W

    Abstract: No abstract text available
    Text: PULSE WIDTH MODULATION AMPLIFIER SA14 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • HALF BRIDGE OUTPUT WIDE SUPPLY RANGE—16-200V 20A CONTINUOUS TO 85° C CASE 3 PROTECTION CIRCUITS


    Original     		546-APEX RANGE--16-200V TE9493 45kHz SA14U POWER AMPLIFIER CIRCUIT DIAGRAM 4000W PDF

    POWER AMPLIFIER CIRCUIT DIAGRAM 4000W

    Abstract: 4000w power amplifier piezo charge amplifier MO-127 SA14 flyback 150w
    Text: PULSE WIDTH MODULATION AMPLIFIER SA14 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • HALF BRIDGE OUTPUT WIDE SUPPLY RANGE—16-200V 20A CONTINUOUS TO 85° C CASE 3 PROTECTION CIRCUITS


    Original     		546-APEX RANGE--16-200V TE9493 SA14U POWER AMPLIFIER CIRCUIT DIAGRAM 4000W 4000w power amplifier piezo charge amplifier MO-127 SA14 flyback 150w PDF

    SEM 238

    Abstract: 1E14 2E12 FRK254D FRK254H FRK254R Rad Hard in Fairchild for MOSFET
    Text: FRK254D, FRK254R, FRK254H 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 20A, 250V, RDS on = 0.170Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		FRK254D, FRK254R, FRK254H O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD SEM 238 1E14 2E12 FRK254D FRK254H FRK254R Rad Hard in Fairchild for MOSFET PDF

    POWER AMPLIFIER CIRCUIT DIAGRAM 4000W

    Abstract: 4000w power amplifier
    Text: PULSE WIDTH MODULATION AMPLIFIER SA14 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • HALF BRIDGE OUTPUT WIDE SUPPLY RANGE—16-200V 20A CONTINUOUS TO 85° C CASE 3 PROTECTION CIRCUITS


    Original     		546-APEX RANGE--16-200V TE9493 12-pin 45kHz SA14U POWER AMPLIFIER CIRCUIT DIAGRAM 4000W 4000w power amplifier PDF

    pn junction diode structure

    Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
    Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss


    Original     		PDF

    p-channel 250V 30A power mosfet

    Abstract: p-channel 250V 16A power mosfet Power MOSFET P-Channel 250V 50A mosfets Power MOSFETs 19A, 200V, P-Channel Power MOSFET N_CHANNEL MOSFET 100V MOSFET MOSFET 200v 20A n.channel mosfet 40a 200v FRK260
    Text: RAD HARD MOSFETsl RAD HARD TRANSISTORS PAGE Rad Hard Power MOSFET Selection G u id e . 4-3 Rad Hard Data Packages - Harris Power T ra n s is to rs .


    OCR Scan     		-200V, p-channel 250V 30A power mosfet p-channel 250V 16A power mosfet Power MOSFET P-Channel 250V 50A mosfets Power MOSFETs 19A, 200V, P-Channel Power MOSFET N_CHANNEL MOSFET 100V MOSFET MOSFET 200v 20A n.channel mosfet 40a 200v FRK260 PDF