Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC857S Multi-Chip TRANSISTOR PNP SOT-363 FEATURES Power dissipation C1 PCM : 300mW(Ta=25℃) B2 E2 Collector current ICM : -200mA Collector-base voltage V(BR)CBO : -50V
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OT-363
BC857S
OT-363
300mW
-200mA
-10mA
-100mA
-10mA
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pnp hfe 120
Abstract: LCC1 transistor 200ma pnp 036w BCY58QF
Text: Search Results Part number search for devices beginning "BC477" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BC477 PNP TO18 80V 0.1A 50 220 5/2m 150MHz
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BC477"
BC477
BC477A
BC477B
BC477CSM
BC477CSM-JQR-B
BC477DCSM
BC477DCSM-JQR-B
BC477XCSM
BC477XCSM-JQR-B
pnp hfe 120
LCC1
transistor 200ma pnp
036w
BCY58QF
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BCY71DCSM
Abstract: LE17
Text: SILICON EPITAXIAL PNP TRANSISTOR BCY71DCSM • Low Current / Low Voltage Transistor In A Dual Ceramic Hermetic Package • Designed For General Purpose Industrial Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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BCY71DCSM
-200mA
350mW
500mW
MO-041BB)
BCY71DCSM
LE17
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL PNP TRANSISTOR BCY71DCSM • Low Current / Low Voltage Transistor In A Dual Ceramic Hermetic Package • Designed For General Purpose Industrial Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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BCY71DCSM
-200mA
350mW
500mW
MO-041BB)
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Untitled
Abstract: No abstract text available
Text: LTC1734 Lithium-Ion Linear Battery Charger in ThinSOT FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Low Profile 1mm ThinSOTTM Package No Blocking Diode Required No Sense Resistor Required 1% Accurate Preset Voltages: 4.1V or 4.2V Charge Current Monitor Output
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LTC1734
200mA
700mA
LTC1734
LTC1732
LT1769
200kHz
sn1734
1734fs
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LTRG
Abstract: preset resistor 10k LTC1734 marking G02 sot89 ltrg marking 2SB1443 56V BATTERY CHARGER FCX589 wiring diagram 1734-IE8C TRANSISTOR GUIDE
Text: LTC1734 Lithium-Ion Linear Battery Charger in ThinSOT U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Low Profile 1mm ThinSOTTM Package No Blocking Diode Required No Sense Resistor Required 1% Accurate Preset Voltages: 4.1V or 4.2V Charge Current Monitor Output
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LTC1734
200mA
700mA
LTC1734
LTC1732
LT1769
200kHz
1734f
LTRG
preset resistor 10k
marking G02 sot89
ltrg marking
2SB1443
56V BATTERY CHARGER
FCX589
wiring diagram 1734-IE8C
TRANSISTOR GUIDE
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LTRG
Abstract: ltrg marking constant current source with 500mA preset resistor 10k pnp transistor beta values NPN transistor 2n3904 beta value 2SB1443 56V BATTERY CHARGER a1s sot-23 FCX589
Text: LTC1734 Lithium-Ion Linear Battery Charger in ThinSOT U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Low Profile 1mm ThinSOTTM Package No Blocking Diode Required No Sense Resistor Required 1% Accurate Preset Voltages: 4.1V or 4.2V Charge Current Monitor Output
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LTC1734
200mA
700mA
LTC1734
LTC1732
LT1769
200kHz
sn1734
1734fs
LTRG
ltrg marking
constant current source with 500mA
preset resistor 10k
pnp transistor beta values
NPN transistor 2n3904 beta value
2SB1443
56V BATTERY CHARGER
a1s sot-23
FCX589
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BC557
Abstract: transistor marking bc557 BC856A-BC858C BC557 sot-23 BC856BLT1 bc857clt1 T2 BC558 TRANSISTOR
Text: Shandong Yiguang Electronic Joint stock Co., Ltd SEMICONDUCTOR BC856A-BC858C TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 SURFACE MOUNT SMALL SIGNAL TRANSISTORS * Epitaxial Die Construction * Ideally Suited Automatic Insertion * 310mW Power Dissipation
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BC856A-BC858C
OT-23
310mW
BC846-BC848)
BC856
BC857
BC858
BC557
transistor marking bc557
BC856A-BC858C
BC557 sot-23
BC856BLT1
bc857clt1
T2 BC558 TRANSISTOR
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LTRG
Abstract: ltrg marking LTC1734 2N7002 FMMT549 1734i FCX717
Text: Final Electrical Specifications LTC1734 Lithium-Ion Linear Battery Charger in SOT-23 January 2001 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Tiny 6-Lead SOT-23 Package 1% Accurate Preset Voltages: 4.1V or 4.2V Programmable Charge Current: 200mA to 700mA
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LTC1734
OT-23
OT-23
200mA
700mA
LTC1734
LTC1732
LT1769
200kHz
1734i
LTRG
ltrg marking
2N7002
FMMT549
FCX717
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transistor UV1
Abstract: High Current Switching Applications transistor 72m transistor
Text: TSM108 AUTOMOTIVE SWITCH MODE VOLTAGE AND CURRENT CONTROLLER • ■ ■ ■ ■ ■ ■ APPLICATION DIAGRAM MOSFET P or PNP BATTERY ■ ■ ■ POSITIVE LINE CONSTANT VOLTAGE MODE CONTROL CONSTANT CURRENT MODE CONTROL PRECISION VOLTAGE AND CURRENT CONTROL LOOPS
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TSM108
TSM108
transistor UV1
High Current Switching Applications transistor
72m transistor
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100w high power car amplifier
Abstract: 105M 700M TSM108 TSM108I pwm step down 100W transistor UV1
Text: TSM108 AUTOMOTIVE SWITCH MODE VOLTAGE AND CURRENT CONTROLLER • ■ ■ ■ ■ ■ ■ APPLICATION DIAGRAM MOSFET P or PNP BATTERY ■ ■ ■ POSITIVE LINE CONSTANT VOLTAGE MODE CONTROL CONSTANT CURRENT MODE CONTROL PRECISION VOLTAGE AND CURRENT CONTROL LOOPS
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TSM108
TSM108
100w high power car amplifier
105M
700M
TSM108I
pwm step down 100W
transistor UV1
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TSM108
Abstract: transistor UV1
Text: TSM108 VOLTAGE AND CURRENT STEPDOWN PWM CONTROLLER • OUTPUT HIGH SIDE CURRENT SENSING APPLICATION DIAGRAM ■ PRECISE CC/CV REGULATION ■ ADJUSTABLE SWITCHING FREQUENCY ■ ADJUSTABLE OVP/UVP UVLO THRESHOLDS ■ STANDBY MODE FEATURE ■ SUSTAINS 60V ■ MINIMAL EXTERNAL COMPONENTS
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TSM108
TSM108
transistor UV1
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105M
Abstract: 700M TSM108 TSM108I car rc schematics UV411
Text: TSM108 VOLTAGE AND CURRENT STEPDOWN PWM CONTROLLER • OUTPUT HIGH SIDE CURRENT SENSING APPLICATION DIAGRAM ■ PRECISE CC/CV REGULATION ■ ADJUSTABLE SWITCHING FREQUENCY ■ ADJUSTABLE OVP/UVP UVLO THRESHOLDS ■ STANDBY MODE FEATURE ■ SUSTAINS 60V ■ MINIMAL EXTERNAL COMPONENTS
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TSM108
TSM108
105M
700M
TSM108I
car rc schematics
UV411
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200 Amp bridge mosfet
Abstract: car battery charger transistor UV1
Text: TSM108 AUTOMOTIVE SWITCH MODE VOLTAGE AND CURRENT CONTROLLER PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ APPLICATION DIAGRAM MOSFET P or PNP BATTERY ■ ■ ■ POSITIVE LINE CONSTANT VOLTAGE MODE CONTROL CONSTANT CURRENT MODE CONTROL PRECISION VOLTAGE AND CURRENT CONTROL LOOPS
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TSM108
SO-14
TSM108
200 Amp bridge mosfet
car battery charger
transistor UV1
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100w high power car amplifier
Abstract: 105M 700M TSM108 TSM108I mosfet 100w 12v amplifier 100w car amplifier
Text: TSM108 AUTOMOTIVE SWITCH MODE VOLTAGE AND CURRENT CONTROLLER • ■ ■ ■ ■ ■ ■ APPLICATION DIAGRAM MOSFET P or PNP TSM108 D SO14 Plastic Micropackage DESCRIPTION TSM108 is a P-channel MOSFET controller which ensures constant voltage and constant current in
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TSM108
TSM108
100w high power car amplifier
105M
700M
TSM108I
mosfet 100w 12v amplifier
100w car amplifier
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transistor MW 882
Abstract: 5v ZENER DIODE zener diode 5v Zener Diode SOT-, 5v, 200mA PDTA144E DFN1006-2 DFN1006 DFN1006-3 Zener diode with 9v Zener Diode SOT-23, 6v, 200mA
Text: New Product Announcement October 17, 2007 Diodes Expands Line of Ultra-Miniature DFN1006 Product Family Targeting Handheld Portable Applications DFN1006 Package Advantage D Wide Product Expansion in Industry Leading Micro-Leadless DFN1006 Packages Include:
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DFN1006
DFN1006
1N4448HLP
BAS16LP
BAS40LP
BAT54LP
BAT54LPS
transistor MW 882
5v ZENER DIODE
zener diode 5v
Zener Diode SOT-, 5v, 200mA
PDTA144E
DFN1006-2
DFN1006-3
Zener diode with 9v
Zener Diode SOT-23, 6v, 200mA
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PNP -50V -200mA sot23
Abstract: C858 BC858 BC856 BC857
Text: BC856-BC858 PNP SILICON TRANSISTOR Features Power dissipation 。 P C M : 0.3 W Tamb=25 C Pluse Drain I CM : -0.1 mA Reverse Voltage V (BR)CBO : BC856 -80V BC857 -50V BC858 -30V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C
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BC856-BC858
BC856
BC857
BC858
OT-23
BC856
BC857
PNP -50V -200mA sot23
C858
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PM2104
Abstract: BAV99ZXCT PM2105 IRFD9120 BAV99ZXCT-ND IRFD9120 N CHANNEL NDC652PCT BC847C BCW60D BCW61D
Text: Application Note 2798 Current Regulation and DC Sequencing Circuits for Dual Supply GaAs Power Amplifiers Introduction The purpose of this application note is to address the issue of DC operation for Pacific Monolithics’ dual supply GaAs power amplifiers. The PM2107 is used in this application note as the example. A
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PM2107
PM2107,
AP2798
PM2104
BAV99ZXCT
PM2105
IRFD9120
BAV99ZXCT-ND
IRFD9120 N CHANNEL
NDC652PCT
BC847C
BCW60D
BCW61D
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Untitled
Abstract: No abstract text available
Text: Transistor m in i Reel PNP — R atin g s m iniB a g Bulk 500 pcs _ Type_ PNP G en eral P urpose BC80S-16 73-8081 BC80E-25 73-8082 BC806-40 73-8083 V ceo Ic 100 f ICS V mA M in-M ax VCE fT M H z P art Marketing 53-8081 53-8082 53-8083 25V 500mA 100-250
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BC80S-16
BC80E-25
BC806-40
500mA
100mA
100MHz
100mA
150MHz
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BC261
Abstract: BC261B BC262 BC262A BC262B BC-261 BC261A BC263 BC263A BOX6947
Text: PNP H IG H GAIN, PLANAR EPITAXIAL GENERAL DESCRIPTION ; The BC261, BC262 and BC263 are PNP silicon planar epitaxial transistors. The BC261 is intended for audio amplifier driver stage. The BC262 is intended for general purpose applications. The BC263 is intended for
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BC261
BC262
BC263
BC261,
BC263
BC261B
BC262A
BC262B
BC-261
BC261A
BC263A
BOX6947
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113 marking code PNP transistor
Abstract: transistor GTO BC856T 113 marking code transistor
Text: Central“ BC856T SERIES BC857T SERIES Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856T and BC857T Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and
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BC856T
BC857T
CP588,
30-0ctober
OT-523
113 marking code PNP transistor
transistor GTO
113 marking code transistor
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BC261
Abstract: BC261B BC261A
Text: BC261 BC262 BC263 SILICON PNP HIGH GAIN, PLANAR EPITAXIAL GENERAL DESCRIPTION ; The BC261, BC262 and BC263 a re PNP s i l i c o n p la n a r e p i t a x i a l tra n sisto rs. The BC261 is in te n d e d f o r audio a m p l i f i e r d r i v e r s t a g e .
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BC261
BC262
BC263
BC261,
BC263
200Hz
BC261B
BC261A
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transistor bc 731
Abstract: ULN pnp array ULN* PNP transistor array TN-61 TN4S
Text: SIE MICRO LINEAR D • bC HB mö 00027^4 'T " - 5 S 'U '3 .\ % M ic r o L in e a r 2*12 ■ ULN September 1989 PRELIMINARY U SIQ FB3480 Power Supply Controller Array GENERAL DESCRIPTION The FB3480 Power Supply C ontroller Array is a new concept in Switch Mode Power Supply Controller
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FB3480
FB3480,
transistor bc 731
ULN pnp array
ULN* PNP transistor array
TN-61
TN4S
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BC261
Abstract: BC261B BC261A BC262 BC262A BC263 BC263A
Text: BC261 PNP HIGH GAIN, EPITAXIAL PLANAR SILICON : K , ' 4 % £ c GENERAL DESCRIPTION : The BC261, BC262 and BC263 are s ilic o n p lan ar e p it a x ia l tra n sisto rs. The BC261 i s i n t e n d e d f o r au d io a m p l i f i e r d r i v e r s t a g e . The BC262 i s i n t e n d e d f o r
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BC261
BC261,
BC262
BC263
360mW
-200mA
BC261B
BC261A
BC262A
BC263A
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