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    Untitled

    Abstract: No abstract text available
    Text: 2N 2906 PN 2906 M • 2N2906A PN2906A PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES 1 CASE TO-18 THE 2TT2906, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SFEET SWITCHING APPLICATIONS. THEY ARE


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    PDF 2N2906A PN2906A 2TT2906, 2N2906A, PN2906, PN2906A 2N2221, 2N2221A, PN2221 PN2221A

    Untitled

    Abstract: No abstract text available
    Text: MPS 6520 thru’ MPS 6523 COMPLEMENTARY r- SILICON TRANSISTORS MPS6520, MPS6521 NPN and MPS6522, MPS6523 (PNP) are complementary silicon planar epitaxial transistors designed for general purpose amplifier applications and for complementary circuitry. ABSOLUTE MAXIMUM RATINGS


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    PDF MPS6520, MPS6521 MPS6522, MPS6523 MPS6520 MPS6522 100mA 350mW Box69477,

    Untitled

    Abstract: No abstract text available
    Text: 2N3905 2N3906 PNP SILICON PLANAR EPITAXIAL TRANSI STOBS THE 2N3905 AND 2N3906 ABE PNP SILICON PLANAR EPITAXIAL TRANSISTORS. THEY ARE INTENDED FOR GENERAL PURPOSE, SATUHATEDSWITCHING AND AMPLIFIER APPLICATIONS. THEY ARE COMPLIMENTARY TO 2N3903 AND 2N3904 RESPECTIVELY.


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    PDF 2N3905 2N3906 2N3905 2N3906 2N3903 2N3904 T0-92A 100MHz 100kHz 100juA

    bf314

    Abstract: No abstract text available
    Text: BF 314 NPN SILICON Ik lJ. PLANAR UBI HIGH FREQUENCY EPITAXIAL J TRANSISTOR m n mj»4 * ? j i MECHANICAL OUTLINE GENERAL DESCRIPTION ; The BF314 is a NPN silicon planar epitaxial transistor designed for use as RF amplifier and VHF & UHF input stage in common base configuration.


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    PDF BF314 O-92F 100MHz BOX69477 J0321

    MPS6522

    Abstract: mps-6522 MPS6520 MPS6521 MPS6523
    Text: il il u iv ir w wv/<.w COMPLEMENTARY SILICON TRANSISTORS MPS6520, MPS6521 NPN and MPS6522, MPS6523 (PNP) are complementary silicon planar epitaxial transistors designed for general purpose amplifier applications and for complementary circuitry. ABSOLUTE MAXIMUM RATINGS


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    PDF MPS6520, MPS6521 MPS6522, MPS6523 MPS6520 MPS6522 100mA 350mW 3-8S343373-898334- mps-6522 MPS6521 MPS6523

    BC238 h parameter

    Abstract: MH 0810C hFE Group 8100C ME8100 MH8100 MH0810 BC308 1I103 BC238
    Text: MH 8100 MH 0810 COMPLEMENTARY EPITAXIAL TRANSISTORS FOR 3 - 5 W AF OUTPUT MICRO ELECTRONICS The MH8100 NPN , MH0810 (PNP) are complementary silicon planar epitaxial transistors designed fo r the output stages of 3 - 5 watt audio amplifiers. They are also suitable for


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    PDF MH8100 MH0810 O-220B 10rnS) 100-ohms MH8100, MH0810, BC238, BC338, BC308, BC238 h parameter MH 0810C hFE Group 8100C ME8100 MH8100 MH0810 BC308 1I103 BC238

    2N5818

    Abstract: 2N5815 2N5814 2N5816 2N5819 2N5810 2N5811 BOX69477
    Text: ! I/ * • 2N5819 ■ /' 2N5810 • th ro u g h COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS I CASE TO-92F WITH X-67 LEAD PREFORMED HEAT SINK THE 2N5810 THROUGH 2N5819 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS.


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    PDF 2N5810 2N5819 2N5819 O-92F 2N5810, 2N5811, 2N5814, 2N5818 2N5815 2N5814 2N5816 2N5811 BOX69477

    3906 pnp

    Abstract: 2N3903 2N3904 2N3905 2N3906 BOX69477 2N3906 MICRO ELECTRONICS E3040
    Text: Vj.sl 2N3905 'i i /• 2N 3906 PNP SILICON PLANAR EPITAXIAL TRáNSISTOBS . » . . * •••• . • s . . . . . k. . V . ’ V • . t, *. . i . •• . . . . . . <y -


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    PDF 2N3905 2N3906 2N3903 2N3904 T0-92A 200mA 350mW PA905 3906 pnp BOX69477 2N3906 MICRO ELECTRONICS E3040

    PN3563

    Abstract: PN5130 BOX69477 PN5132
    Text: PN 3563 PN 5130 PN 5132 NPN SILICON RF SMALL SIGNAL TRANSISTORS CASE TO-92A THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR RF SMALL SIGNAL APPLICATIONS. PN3565 PN5130 PN5132 «V SBC PN3563 PN5130 ' PN5132 ABSOLUTE MAXIMUM RATINGS Collector-Base ^oltage


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    PDF PN5132 O-92A PN3563 PN5130 PN3563 PN5130 PN513 250mW BOX69477

    BC485

    Abstract: BC487 transistors BC 487 BC489
    Text: B C 485 B C 487 B C 489 NPN SILICON PLANAR EPITAXIAL TRANSISTORS IVIICFRD ELEC CASE T0-92F BC485, BC487 and BC489 are NPN silicon planar epitaxial transistors designed for use as high voltage high current driver and output transistors. ABSOLUTE MAXIMUM RATINGS


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    PDF BC485, BC487 BC489 I0-92F BC485 625mW 500mA 100mA transistors BC 487

    2N5372

    Abstract: 2N5369 2N5373 2N5368 2N5370 2N5371 2N5374 2N5375 2N5568 NPN, PNP for 500ma, 30v
    Text: 2N 5368 through 2N 5375 ^1 COMPLEMENTARY SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES _ ;SF A THE ABOVE TYPES ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. CASE TO-92F CEB 2N 5368 ffPN


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    PDF 2N5368 2N5375 O-92F 2N5568 2N5369 2N5370 500mA 2N5372 2N5373 2N5374 2N5371 NPN, PNP for 500ma, 30v

    BC337

    Abstract: BC338 BC327 BC328 BC337 hfe PNP BC327
    Text: BC 337 BC 338 NPN SILICON AP MEDIUM POWER TRANSISTORS CASE TO-92F THE BC337 » BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC337, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327,


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    PDF BC337, BC338 BC327, BC328 O-92F BC337 625mW BC327 BC337 hfe PNP BC327

    ME0412

    Abstract: 8822 TRANSISTOR me0411 ME0413 20MHZ 4102 transistor ME4103
    Text: SMALL SIGNAL HIGH GAIN LOW NOISE NPN SILICON PLANAR EPITAXIAL TRANSISTOR MICRO ELECTRONICS FEATURES • H ig h G a i n h p g . 1 0 0 - 6 0 0 • E x c e lle n t L i n e a r i t y F ro m lO ^ A • H ig h B re a k d o w n V o l t a g e B V


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    PDF 60Vmin ME0411 ME0412 ME0413 200mW 425mW 8822 TRANSISTOR ME0413 20MHZ 4102 transistor ME4103

    BCy71

    Abstract: BCY70 vce 1v BCY72
    Text: BCY70.1.2 PNP /* SILICON TRANSISTORS TO-18 The BCY70, BCY71 and BCY72 are PNP silicon planar epitaxial transistors designed for general purpose amplifier and switching applications. CBE ABSOLUTE MAXIMUM RATINGS BCY70 BCY71 BCY72 Collector-Base Voltage VcBO


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    PDF BCY70, BCY71 BCY72 BCY70 BCY72 200mA 350mW BCY71 vce 1v

    bc727

    Abstract: bc728
    Text: THE BC727, BC728 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF DRIVER AND OUTPUT STAGES, AS WELL AS FOR IJNIYERSAL APPLICATIONS. THE BC727,BC728 ARE COMCOMPLEMENTARY TO THE NPN TYPE BC737, BC738 RESPECTIVELY. CASE TO-92A "EBC ABSOLUTE MAXIMUM RATINGS


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    PDF BC727, BC728 BC737, BC738 O-92A BC727 625mW

    Untitled

    Abstract: No abstract text available
    Text: 2N2102 2N4036 COMPLEMEMTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES 1 THE 2N210? NPN AND 2N4056(PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS. C E B


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    PDF 2N2102 2N4036 2N210? 2N4056 2N21Q2 150mA 150mA 8100B

    2N5819

    Abstract: No abstract text available
    Text: *I I/ • ¡ 2N5810 2N5819 th ro u g h COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS I CASE TO-92F LEAD PREFORMED THE 2N5810 THROUGH 2N5819 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS.


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    PDF 2N5810 2N5819 O-92F 2N5810 2N5819 O-92F 2N5811, 2N5810, 2N5814,

    Untitled

    Abstract: No abstract text available
    Text: MPS - A 43 MPS - A 42 NPN SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS K *a I CASE TO-92A THE MPS-A42, MPS-A43 ARE NPN SILICON PLANAR TRANSISTORS FOR GENERAL PURPOSE HIGH VOLTAGE APPLICATIONS SUCH AS TV VIDEO OUTPUT STAGE AND GAS DISCHARGE TUBE DRIVER.


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    PDF O-92A MPS-A42, MPS-A43 MPS-A42 MPS-A43 100mA 500mA 625mW BOX69477

    MGB31TAH

    Abstract: No abstract text available
    Text: CKO MGB31TAH ULTRA il Kill BRIGHTNESS GREEN LED LAMP DESCRIPTION MGB31TAH is an AlGalnP super green LED lamp encapsulated in a 3mm diameter, clear transparent lens. * No scale * ToL : +/- 0.3mm ABSOLUTE MAXIMUM RATINGS Power Dissipation @ Ta=25°C Forward Current, DC IF


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    PDF MGB31TAH MGB31TAH -30to 100jiA

    MPSA55

    Abstract: A06 NPN mpsa56 mpsa06 MFS-A05 MPS-A05 MPS-A06 MPS-A55 MPS-A56 MPS A06
    Text: MPS-A06 MPS-A56 MPS-A05 MPS-A55 W'ß\ COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS CASE TO-92A THE MPS-A05, MPS-A06, MPS-A55» MPS-A56 ARE SILICON PLANAR EPITAXIAL„TRANSISTORS FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE MPS-A05,


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    PDF MPS-A05 MPS-A06 MPS-A55 MPS-A56 MPS-A05, MPS-A06, MPS-A55Â MPSA55 A06 NPN mpsa56 mpsa06 MFS-A05 MPS-A05 MPS-A55 MPS A06

    BC758

    Abstract: BC727 BC728 BC737 BC738
    Text: ÖC 737 • BC 738 NPN SILICON AF MEDIUM POWER TRANSISTORS sj- ' 4 'è é i ispr •*' $ THE BC737, BC738 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC737, BC738 ARE COM­


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    PDF BCT37, BC738 BC737, BC727, BC728 O-92A BC737 BC758 BC727

    Untitled

    Abstract: No abstract text available
    Text: CRO MGB31TAH ULTRA il K ill BRIGHTNESS GREEN LED LAMP DESCRIPTION MGB31TAH is an AlGalnP super green LED lamp encapsulated in a 3mm diameter, clear transparent lens. * No scale * ToL : +/- 0.3mm ABSOLUTE MAXIMUM RATINGS Power Dissipation @ Ta=25°C Forward Current, DC IF


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    PDF MGB31TAH MGB31TAH -30to 10QDissipation Box69477

    200 watt audio ic

    Abstract: ic 8050 8050h
    Text: CRÛ 8050 G E N E R A L D E S C R IP T IO N :- •4 H ie 8 0 5 0 is an NPN epitaxial silicon planar transistor designed for use in the audio ou tp ut stage and converter/inverter circuits. Complem entary to 8550. TO-92A R A T IN G S Note 1 Maximum Temperatures


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    PDF 100mA Box69477, 200 watt audio ic ic 8050 8050h

    BC358

    Abstract: BC327 BC328 BC337 BC338
    Text: BC 337 BC 338 NPN SILICON AP MEDIUM POWER TRANSISTORS 1 . CASE TO-92F THE BC337» BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF DRIVER AND OUTPUT STAGES, AS: WELL AS FOR UNIVERSAL APPLICATIONS. THE BC357, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327,


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    PDF BC337, BC338 BC327, BC328 O-92F BC337 625mW BC358 BC327