TRANSISTOR 18W Search Results

TRANSISTOR 18W Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 18W Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
NTE483 Abstract: No abstract text available Text: NTE483 Silicon NPN Transistor RF Power Output for Mobile Use, PO = 18W @ 866MHz Description: The NTE483 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device utilizes matched input technology Tuned Q to increase bandwidth and power gain over the complete range of 806–866MHz.	Original	NTE483 866MHz NTE483 800MHz 866MHz. 866MHz 836MHz	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
MRF660 Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040	Original	2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet	PDF
2SC1729 Abstract: 1 w NPN EPITAXIAL PLANAR TYPE Text: MITSUBISHI RF POWER TRANSISTOR 2SC1729 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1729 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio amplications. Dimensions in mm FEATURES • •	OCR Scan	2SC1729 175MHz 175MHz. T-31E 175MHz 1 w NPN EPITAXIAL PLANAR TYPE	PDF
2sc1968 Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC1968A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1968A is a silicon NPN epitaxial planar type transistor de signed for RF power amplifiers on UHF band mobile radio applications. Dimensions in mm FEATURES •	OCR Scan	2SC1968A 2SC1968A 470MHz 470MHz. 2sc1968	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC1968A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1968A is a silicon NPN epitaxial planar type transistor de signed for RF power amplifiers on UHF band mobile radio applications. Dimensions in mm FEATURES •	OCR Scan	2SC1968A 2SC1968A 470MHz 470MHz.	PDF
2sc1968a Abstract: 2sc1968 Text: MITSUBISHI RF POWER TRANSISTOR 2SC1968A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2S C 1968A is a silicon NPN epitaxial planar type transistor de signed for RF power amplifiers on U H F applications. Dimensions in mm band mobile radio FEATURES	OCR Scan	2SC1968A 2SC1968A 470MHz 470MHz. T-31E 470MH 2sc1968	PDF
RF NPN POWER TRANSISTOR l band Abstract: transistor su 312 Text: • 0 D1 7 5 4 4 sm ■ MITSUB.SH. RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1968 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm for RF power amplifiers on UHF band mobile radio applications.	OCR Scan	2SC1968 470MHz 470MHz. GD1754b 2SC1968 RF NPN POWER TRANSISTOR l band transistor su 312	PDF
TRANSISTOR 2sC1945 Abstract: 2sc1945 2sC1945 NPN ABE 710 Text: MITSUBISHI RF POWER TRANSISTOR 2SC1945 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1945 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on HF band mobile radio applications. 9.1 ± 0 . 7 FEATURES D im ensions in mm	OCR Scan	2SC1945 2SC1945 27MHz T0-220 27MHz. TRANSISTOR 2sC1945 2sC1945 NPN ABE 710	PDF
EAR99 Abstract: HEMT 36 ghz transistor Text: MAGX-003135-180L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty Preliminary 27 Sept 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation	Original	MAGX-003135-180L00 300us EAR99 MAGX-003135-180L00 HEMT 36 ghz transistor	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC2628 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2628 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm C 1 .5 M A X	OCR Scan	2SC2628 2SC2628 175MHz 175MHz,	PDF
2sc2094 Abstract: transistor 2sc2094 PW150 15WPEP transistor rf vhf 2SC209 Text: MITSUBISHI RF POWER TRANSISTOR 2SC2094 NPN EP ITA X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2094 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band mobile radio applications. Dimensions in mm FEATURES	OCR Scan	2SC2094 175MHz 175MHz. IMD-30dBc 15WPEP 2SC2094 100mA 175MHz transistor 2sc2094 PW150 15WPEP transistor rf vhf 2SC209	PDF

2SC1945 Abstract: TO220 RF POWER TRANSISTOR NPN IDO24 TRANSISTOR 2sC1945 2sC1945 NPN circuit rf amplifier 2sc1945 12V-pm mitsubishi 2sc1945 Text: MITSUBISHI RF POWER TRANSISTOR 2SC1945 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1945 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 . 7 FEATURES • 0 3 .6 ± 0 . 2	OCR Scan	2SC1945 27MHz O-220 27MHz. T-30E TO220 RF POWER TRANSISTOR NPN IDO24 TRANSISTOR 2sC1945 2sC1945 NPN circuit rf amplifier 2sc1945 12V-pm mitsubishi 2sc1945	PDF
EAR99 Abstract: MAGX-002731-180L00 Text: MAGX-002731-180L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty Production V1 27 Sept 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation	Original	MAGX-002731-180L00 300us EAR99 300us, 500us, MAGX-002731-180L00	PDF
2SC1945 Abstract: 2SC1945 Transistor Text: MITSUBISHI RF POWER TRANSISTOR 2SC1945 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1945 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on HF band mobile radio applications. 9.1 ± 0 . 7 FEATURES « S 3 .6 ± 0 .2	OCR Scan	2SC1945 2SC1945 27MHz O-220 27MHz. 2SC1945 Transistor	PDF
Untitled Abstract: No abstract text available Text: MAGX-002731-180L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty Production V2 26 Oct 12 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation	Original	MAGX-002731-180L00 300us EAR99 300us,	PDF
2SC2628 Abstract: NPN EPITAXIAL PLANAR TYPE 175mhz 1w 18W 12 transistor Text: MITSUBISHI RF POWER TRANSISTOR 2SC2628 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2628 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm C 1 .5 M A X	OCR Scan	2SC2628 2SC2628 175MHz 175MHz, NPN EPITAXIAL PLANAR TYPE 175mhz 1w 18W 12 transistor	PDF
2SC1968 Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC1968 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC1968 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers on UHF band mobile radio applications. D im e n s io n s in m m FEATURES	OCR Scan	2SC1968 470MHz 470MHz.	PDF
NTE343 Abstract: No abstract text available Text: NTE343 Silicon NPN Transistor RF Power Output PO = 14W, 175MHz Description: The NTE343 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 7.5dB (VCC = 13.5V, PO = 14W, f = 175MHz)	Original	NTE343 175MHz) NTE343 175MHz 100mA,	PDF
2SC1729 Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC1729 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC 1729 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on V H F band mobile radio amplications. Dimensions in mm FEATURES • High power gain: Gpe > 10dB	OCR Scan	2SC1729 2SC1729 175MHz.	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC1729 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1729 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on V H F band mobile radio amplications. Dimensions in mm FEATURES • High power gain: Gpe > 10dB	OCR Scan	2SC1729 175MHz.	PDF
2sc1972 Abstract: transistor 2sc1972 TO220 RF POWER TRANSISTOR NPN 18W 12 transistor RF POWER TRANSISTOR Text: MITSUBISHI RF POWER TRANSISTOR 2SC1972 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1972 is a silicon NPN epitaxial planar type transistor de Dimensions signed for RF power amplifiers on V H F band mobile radio applications. 9.1 ± 0 .7 03.6 ± 0 .2	OCR Scan	2SC1972 175MHz O-220 175MHz. 2SC1972 175MHz transistor 2sc1972 TO220 RF POWER TRANSISTOR NPN 18W 12 transistor RF POWER TRANSISTOR	PDF

TRANSISTOR 18W Search Results

TRANSISTOR 18W Result Highlights (5)

TRANSISTOR 18W Datasheets Context Search

2sb504

NTE483

2N2222A 338

y51 h 120c

MRF660

2SC1729

2sc1968

Untitled

2sc1968a

RF NPN POWER TRANSISTOR l band

TRANSISTOR 2sC1945

EAR99

Untitled

2sc2094

2SC1945

EAR99

2SC1945

Untitled

2SC2628

2SC1968

NTE343

2SC1729

Untitled

2sc1972