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    TRANSISTOR 18W Search Results

    TRANSISTOR 18W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 18W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE483

    Abstract: No abstract text available
    Text: NTE483 Silicon NPN Transistor RF Power Output for Mobile Use, PO = 18W @ 866MHz Description: The NTE483 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device utilizes matched input technology Tuned Q to increase bandwidth and power gain over the complete range of 806–866MHz.


    Original     		PDF NTE483 866MHz NTE483 800MHz 866MHz. 866MHz 836MHz

    MRF660

    Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
    Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040


    Original     		PDF 2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet

    EAR99

    Abstract: HEMT 36 ghz transistor
    Text: MAGX-003135-180L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty Preliminary 27 Sept 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation


    Original     		PDF MAGX-003135-180L00 300us EAR99 MAGX-003135-180L00 HEMT 36 ghz transistor

    EAR99

    Abstract: MAGX-002731-180L00
    Text: MAGX-002731-180L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty Production V1 27 Sept 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation


    Original     		PDF MAGX-002731-180L00 300us EAR99 300us, 500us, MAGX-002731-180L00

    Untitled

    Abstract: No abstract text available
    Text: MAGX-002731-180L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty Production V2 26 Oct 12 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation


    Original     		PDF MAGX-002731-180L00 300us EAR99 300us,

    NTE343

    Abstract: No abstract text available
    Text: NTE343 Silicon NPN Transistor RF Power Output PO = 14W, 175MHz Description: The NTE343 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 7.5dB (VCC = 13.5V, PO = 14W, f = 175MHz)


    Original     		PDF NTE343 175MHz) NTE343 175MHz 100mA,

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2SC1729

    Abstract: 1 w NPN EPITAXIAL PLANAR TYPE
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1729 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1729 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio amplications. Dimensions in mm FEATURES • •


    OCR Scan     		PDF 2SC1729 175MHz 175MHz. T-31E 175MHz 1 w NPN EPITAXIAL PLANAR TYPE

    2sc1968

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1968A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1968A is a silicon NPN epitaxial planar type transistor de­ signed for RF power amplifiers on UHF band mobile radio applications. Dimensions in mm FEATURES •


    OCR Scan     		PDF 2SC1968A 2SC1968A 470MHz 470MHz. 2sc1968

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1968A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1968A is a silicon NPN epitaxial planar type transistor de­ signed for RF power amplifiers on UHF band mobile radio applications. Dimensions in mm FEATURES •


    OCR Scan     		PDF 2SC1968A 2SC1968A 470MHz 470MHz.

    2sc1968a

    Abstract: 2sc1968
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1968A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2S C 1968A is a silicon NPN epitaxial planar type transistor de­ signed for RF power amplifiers on U H F applications. Dimensions in mm band mobile radio FEATURES


    OCR Scan     		PDF 2SC1968A 2SC1968A 470MHz 470MHz. T-31E 470MH 2sc1968

    RF NPN POWER TRANSISTOR l band

    Abstract: transistor su 312
    Text: • 0 D1 7 5 4 4 sm ■ MITSUB.SH. RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1968 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm for RF power amplifiers on UHF band mobile radio applications.


    OCR Scan     		PDF 2SC1968 470MHz 470MHz. GD1754b 2SC1968 RF NPN POWER TRANSISTOR l band transistor su 312

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2628 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2628 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm C 1 .5 M A X


    OCR Scan     		PDF 2SC2628 2SC2628 175MHz 175MHz,

    2sc2094

    Abstract: transistor 2sc2094 PW150 15WPEP transistor rf vhf 2SC209
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2094 NPN EP ITA X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2094 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band mobile radio applications. Dimensions in mm FEATURES


    OCR Scan     		PDF 2SC2094 175MHz 175MHz. IMD-30dBc 15WPEP 2SC2094 100mA 175MHz transistor 2sc2094 PW150 15WPEP transistor rf vhf 2SC209

    Mitsubishi transistor databook

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3022 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dimensions in mm FEATURES •


    OCR Scan     		PDF 2SC3022 2SC3022 520MHz, Mitsubishi transistor databook

    2SC1945

    Abstract: TO220 RF POWER TRANSISTOR NPN IDO24 TRANSISTOR 2sC1945 2sC1945 NPN circuit rf amplifier 2sc1945 12V-pm mitsubishi 2sc1945
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1945 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1945 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 . 7 FEATURES • 0 3 .6 ± 0 . 2


    OCR Scan     		PDF 2SC1945 27MHz O-220 27MHz. T-30E TO220 RF POWER TRANSISTOR NPN IDO24 TRANSISTOR 2sC1945 2sC1945 NPN circuit rf amplifier 2sc1945 12V-pm mitsubishi 2sc1945

    2SC1945

    Abstract: 2SC1945 Transistor
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1945 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1945 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on HF band mobile radio applications. 9.1 ± 0 . 7 FEATURES « S 3 .6 ± 0 .2


    OCR Scan     		PDF 2SC1945 2SC1945 27MHz O-220 27MHz. 2SC1945 Transistor

    2SC2628

    Abstract: NPN EPITAXIAL PLANAR TYPE 175mhz 1w 18W 12 transistor
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2628 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2628 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm C 1 .5 M A X


    OCR Scan     		PDF 2SC2628 2SC2628 175MHz 175MHz, NPN EPITAXIAL PLANAR TYPE 175mhz 1w 18W 12 transistor

    2SC1968

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1968 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC1968 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers on UHF band mobile radio applications. D im e n s io n s in m m FEATURES


    OCR Scan     		PDF 2SC1968 470MHz 470MHz.

    2SC1729

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1729 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC 1729 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on V H F band mobile radio amplications. Dimensions in mm FEATURES • High power gain: Gpe > 10dB


    OCR Scan     		PDF 2SC1729 2SC1729 175MHz.

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1729 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1729 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on V H F band mobile radio amplications. Dimensions in mm FEATURES • High power gain: Gpe > 10dB


    OCR Scan     		PDF 2SC1729 175MHz.

    2sc1972

    Abstract: transistor 2sc1972 TO220 RF POWER TRANSISTOR NPN 18W 12 transistor RF POWER TRANSISTOR
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1972 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1972 is a silicon NPN epitaxial planar type transistor de­ Dimensions signed for RF power amplifiers on V H F band mobile radio applications. 9.1 ± 0 .7 03.6 ± 0 .2


    OCR Scan     		PDF 2SC1972 175MHz O-220 175MHz. 2SC1972 175MHz transistor 2sc1972 TO220 RF POWER TRANSISTOR NPN 18W 12 transistor RF POWER TRANSISTOR