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    TRANSISTOR 1820 Search Results

    TRANSISTOR 1820 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1820 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    486DX-CPU

    Abstract: tamagawa 486DX transistors mos retrograde well 0.35
    Text: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling


    Original     		PDF

    IN5817 schottky diode symbol

    Abstract: 1N5817 595D IN5817 MA737 TC120 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222
    Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small


    Original     		PDF TC120 600mA 300kHz TC120503EHA TC120 system420 D-81739 DS21365B-page IN5817 schottky diode symbol 1N5817 595D IN5817 MA737 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222

    SS TRANSISTOR

    Abstract: No abstract text available
    Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features 8-Pin SOP • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small


    Original     		PDF TC120 600mA 300kHz TC120503EHA TC120303EHA D-81739 DS21365B-page SS TRANSISTOR

    TRANSISTOR J477

    Abstract: TRANSISTOR J477 48 AFT18HW355S C5750Y5V1H226Z
    Text: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 1, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT18HW355S AFT18HW355SR6 1805-he AFT18HW355S TRANSISTOR J477 TRANSISTOR J477 48 C5750Y5V1H226Z

    SC6210

    Abstract: Sc-6210 PBSS4350X PBSS5350X PBSS5350
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4350X 50 V, 3 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Nov 21 2004 Nov 04 Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor


    Original     		PDF M3D109 PBSS4350X SC-62) SCA76 R75/03/pp12 SC6210 Sc-6210 PBSS4350X PBSS5350X PBSS5350

    s43 npn transistor

    Abstract: mle180 S43 sot89 PBSS4350x PBSS5350X transistor s43 SOT89 S43
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4350X 50 V, 3 A NPN low VCEsat BISS transistor Product specification 2003 Jun 24 Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor PBSS4350X FEATURES QUICK REFERENCE DATA


    Original     		PDF M3D109 PBSS4350X SC-62) SCA75 613514/01/pp12 s43 npn transistor mle180 S43 sot89 PBSS4350x PBSS5350X transistor s43 SOT89 S43

    TRANSISTOR J477

    Abstract: TRANSISTOR J477 48 C5750Y5V1H226Z AFT18H35 32E17
    Text: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT18HW355S AFT18HW355SR6 1805-he AFT18HW355S TRANSISTOR J477 TRANSISTOR J477 48 C5750Y5V1H226Z AFT18H35 32E17

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D109 PBSS4350X 50 V, 3 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Nov 21 2004 Nov 04 Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor


    Original     		PDF M3D109 PBSS4350X SC-62) SCA76 R75/03/pp12

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 1, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT18HW355S AFT18HW355SR6

    SOT89 S43

    Abstract: S43 sot89 PBSS4350X PBSS5350X marking S43 mle180
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4350X 50 V, 3 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Jun 24 2003 Nov 21 Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor


    Original     		PDF M3D109 PBSS4350X SC-62) SCA75 R75/02/pp11 SOT89 S43 S43 sot89 PBSS4350X PBSS5350X marking S43 mle180

    transistor j241

    Abstract: aft18P350-4 x3c19p1 j485 transistor j449 j448
    Text: Freescale Semiconductor Technical Data Document Number: AFT18P350-4S2L Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of


    Original     		PDF AFT18P350--4S2L AFT18P350-4S2LR6 DataAFT18P350--4S2L 4/2013Semiconductor, transistor j241 aft18P350-4 x3c19p1 j485 transistor j449 j448

    transistor j307

    Abstract: j352 sk063
    Text: Freescale Semiconductor Technical Data Document Number: AFT18H357-24S Rev. 0, 3/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to


    Original     		PDF AFT18H357--24S AFT18H357-24SR6 transistor j307 j352 sk063

    C5750X7S2A106M

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 1, 11/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.


    Original     		PDF AFT18S230S AFT18S230SR3 C5750X7S2A106M

    NI-880XS-2

    Abstract: J416 J453 C5750X7S2A106M230KB NI-880XS-2L4S aft18s290-13s AFT18S290 ATC100B0R4BT500XT nichicon HD
    Text: Document Number: AFT18S290−13S Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 63 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz.


    Original     		PDF AFT18S290-13S AFT18S290-13SR3 20luding NI-880XS-2 J416 J453 C5750X7S2A106M230KB NI-880XS-2L4S AFT18S290 ATC100B0R4BT500XT nichicon HD

    c5750x7s2a106m

    Abstract: AD255A mosfet mttf aft20p06
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 6.3 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.


    Original     		PDF AFT20P060--4N AFT20P060-4NR3 DataAFT20P060--4N 1/2013Semiconductor, c5750x7s2a106m AD255A mosfet mttf aft20p06

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 6.3 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.


    Original     		PDF AFT20P060--4N AFT20P060 AFT20P060-4NR3 1/2013Semiconductor,

    AFT18S230S

    Abstract: MXC 037 ATC100B1R2BT AFT18S230SR3
    Text: Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 0, 8/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.


    Original     		PDF AFT18S230S AFT18S230SR3 MXC 037 ATC100B1R2BT AFT18S230SR3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR18060E Hz--1880 AGR18060EU AGR18060EF DS04-032RFPP DS02-325RFPP)

    mosfet mttf

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 2, 3/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.


    Original     		PDF AFT18S230S AFT18S230SR3 mosfet mttf

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 1, 11/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET AFT18S230SR3 This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.


    Original     		PDF AFT18S230S AFT18S230SR3

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    B1219

    Abstract: AN 6752
    Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT ly 2PD1820A NPN general purpose transistor Product specification Supersedes data of 1997 May 22 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification 2PD1820A NPN general purpose transistor


    OCR Scan     		PDF 2PD1820A 2PD1820A B1219A 115002/00/02/pp8 B1219 AN 6752

    1219a

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET 2PB1219A PNP general purpose transistor Product specification Supersedes data of 1997 Mar 25 Philips Sem iconductors 1999 Apr 12 PHILIPS PHILIPS Philips Semiconductors Product specification 2PB1219A PNP general purpose transistor


    OCR Scan     		PDF 2PB1219A 2PB1219A 115002/00/03/pp8 1219a