TRANSISTOR 13A 600V Search Results

TRANSISTOR 13A 600V Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
TPD4164F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31
TPD4207F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device 600V (High voltage PWM DC brushless motor driver)
TPD4204F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device 600V (High voltage PWM DC brushless motor driver)

TRANSISTOR 13A 600V Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IRGPC20U Abstract: No abstract text available Text: PD - 9.1031 IRGPC20U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V	Original	IRGPC20U IRGPC20U	PDF
transistor IR 652 H GC Abstract: D-12 IRGBC20U C655 LAmp igbt 600V Text: PD - 9.681A IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V	Original	IRGBC20U O-220AB C-656 transistor IR 652 H GC D-12 IRGBC20U C655 LAmp igbt 600V	PDF
D-12 Abstract: IRGBC20U C655 LAmp Text: PD - 9.681A IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V	Original	IRGBC20U O-220AB C-656 D-12 IRGBC20U C655 LAmp	PDF
transistor c655 Abstract: D-12 IRGBC20U Text: PD - 9.681A IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V	Original	IRGBC20U O-220AB C-656 transistor c655 D-12 IRGBC20U	PDF
transistor IR 840 Abstract: IRG4PC20 Text: PD - 97289 IRG4PC20UPbF UltraFast Speed IGBT PROVISIONAL INSULATED GATE BIPOLAR TRANSISTOR C Features VCES = 600V UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter	Original	IRG4PC20UPbF O-247AC O-247AC transistor IR 840 IRG4PC20	PDF
KF13N60 Abstract: KF13N60N Text: SEMICONDUCTOR KF13N60N TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A N O B Q K R H I C J F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode	Original	KF13N60N above25 Fig12. Fig13. Fig14. Fig15. KF13N60 KF13N60N	PDF
IRGPC30S Abstract: No abstract text available Text: PD - 9.1146 IRGPC30S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.2V	Original	IRGPC30S 400Hz) IRGPC30S	PDF
IRGPC40F Abstract: IGBT IRGPC40F gate turn-off Text: PD - 9.1112 IRGPC40F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.0V	Original	IRGPC40F 10kHz) IRGPC40F IGBT IRGPC40F gate turn-off	PDF
IRGPC20F Abstract: 91022 Text: PD - 9.1022 IRGPC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.8V	Original	IRGPC20F 10kHz) IRGPC20F 91022	PDF
IRGPC40F Abstract: No abstract text available Text: PD - 9.693A IRGPC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.0V	Original	IRGPC40F 10kHz) O-247AC IRGPC40F	PDF
IRGPC40S Abstract: No abstract text available Text: PD - 9.692 IRGPC40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 1.8V	Original	IRGPC40S 400Hz) IRGPC40S	PDF
IRGPC40F Abstract: No abstract text available Text: PD - 9.1112 IRGPC40F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.0V	Original	IRGPC40F 10kHz) IRGPC40F	PDF
IRGPC30S Abstract: No abstract text available Text: PD - 9.1146 IRGPC30S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.2V	Original	IRGPC30S 400Hz) IRGPC30S	PDF
IRGPC30F Abstract: No abstract text available Text: PD - 9.1023 IRGPC30F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.1V	Original	IRGPC30F 10kHz) IRGPC30F	PDF

IRGPC20F Abstract: gate turn-off Text: PD - 9.1022 IRGPC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.8V	Original	IRGPC20F 10kHz) IRGPC20F gate turn-off	PDF
1000v bipolar transistor Abstract: IRGPC30F irgpc30 Text: PD - 9.1023 IRGPC30F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.1V	Original	IRGPC30F 10kHz) 1000v bipolar transistor IRGPC30F irgpc30	PDF
D-12 Abstract: IRGBC20F Text: PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.8V	Original	IRGBC20F 10kHz) O-220AB D-12 IRGBC20F	PDF
IRGBC-20 Abstract: No abstract text available Text: INTERNATIONAL RECTIFIER 2bE D • ^ 5 5 4 5 2 QDlOSflS 1 ■ Data Sheet No. PD-9.626A T- INSULATED GATE BIPOLAR TRANSISTOR -03 International @ ^ 3 Rectifier IR G B C SO GOOV, 1 3 A FEATURES 600V, 13A, T0-220AB IGBT International Rectifier's IRG series of Insulated Gate	OCR Scan	T0-220AB IRGBC20 IRGBC-20	PDF
Hirect Abstract: IRGPC50U c687 Text: International ^Rectifier PD - 9.685A IRGPC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve Vces = 600V	OCR Scan	IRGPC50U O-247AC C-692 SS452 Hirect c687	PDF
G114 Abstract: IRGMIC50U IRGMIC50UU G114 SOT-23-5 Text: PD-9.813 International ü r ]Rectifier IRGMIC50U Ultra Fast-Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE • Electrically Isolated • Hermetically Sealed • Simple Drive Requirements V CES = 600V fie*- 20kHz • Latch-proof • UltraFast operation > 10 kHz	OCR Scan	IRGMIC50U O-259AA 127fO IRGMIC50UD IRGMIC50UU MIL-S-19500 O-259 G-114 G114 IRGMIC50U IRGMIC50UU G114 SOT-23-5	PDF
10A 600 VOLT DIODE Abstract: transistor 13a 600v westinghouse DIODES 827 d transistor KE72 Text: 7294621 POWEREX INC ]>Ë 72T4b21 0000141 5 \| Six/Pac Darlington TRANSISTOR Modules Dim A B C D E F Q H J K L M N P Q R S T U ' Inches 4.13 Max 3.86 ±.01 3.190 .236 .472 1.33 Max .335 .709 .827 .276 .453 .472 .394 .531 .197 1.181 .787 .118 .213 T-33-35 10 Amperes	OCR Scan	72T4b21 T-33-35 KE724S0110 T-33- KE72450110 10A 600 VOLT DIODE transistor 13a 600v westinghouse DIODES 827 d transistor KE72	PDF
transistor C839 Abstract: c839 transistor Text: International îQRjRectifier P D - 9.1128 IRGBC20K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - Ktys @ 125°C, V ge = 15V Vces = 600V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz	OCR Scan	IRGBC20K TQ-220AB C-842 S54S2 00SDb32 transistor C839 c839 transistor	PDF
Untitled Abstract: No abstract text available Text: International IO R Rectifier PD - 91785 IRG4IBC20W PRELIM INARY INSULATED GATE BIPOLAR TRANSISTOR Features c • D esig n ed exp re ss ly for S w itc h -M o d e P o w er S u pp ly and P F C p o w er factor correction V ces = 600V applications • 2 .5 kV , 6 0 s insulation voltage	OCR Scan	IRG4IBC20W	PDF
ITH13C06 Abstract: ITH13C06B T0220AB T0247 Text: ITH13C06 M ITEL High Frequency Powerline N-Channel IGBT S E M IC O N D U C T O R With Ultrafast Diode Supesedes O ctober 1998, version DS5045-1.2 The ITH13C 06 is a very robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range	OCR Scan	ITH13C06 DS5045-1 DS5045-2 ITH13C06 T0263 T0268 T0220AB T0247 ITH13C06B T0220AB T0247	PDF

TRANSISTOR 13A 600V Search Results

TRANSISTOR 13A 600V Result Highlights (5)

TRANSISTOR 13A 600V Datasheets Context Search

IRGPC20U

transistor IR 652 H GC

D-12

transistor c655

transistor IR 840

KF13N60

IRGPC30S

IRGPC40F

IRGPC20F

IRGPC40F

IRGPC40S

IRGPC40F

IRGPC30S

IRGPC30F

IRGPC20F

1000v bipolar transistor

D-12

IRGBC-20

Hirect

G114

10A 600 VOLT DIODE

transistor C839

Untitled

ITH13C06