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    Infineon Technologies AG IRGBC20FD2

    IGBT 600V 16A TO-220AB
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    DigiKey IRGBC20FD2 Tube 50
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    International Rectifier IRGBC20F

    Electronic Component
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    ComSIT USA IRGBC20F 37
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    IRGBC20F Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRGBC20F International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRGBC20F International Rectifier Fast Speed IGBT Original PDF
    IRGBC20F International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRGBC20F Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRGBC20FD2 International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRGBC20FD2 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRGBC20F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    D-12

    Abstract: IRGBC20F
    Text: PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.8V


    Original     		IRGBC20F 10kHz) O-220AB D-12 IRGBC20F PDF

    D-12

    Abstract: IRGBC20F
    Text: Previous Datasheet Index Next Data Sheet PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


    Original     		IRGBC20F 10kHz) O-220AB D-12 IRGBC20F PDF

    Untitled

    Abstract: No abstract text available
    Text: International giilRectifier PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses V c es = 6 0 0 V • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


    OCR Scan     		IRGBC20F 10kHz) O-220AB S5452 O-22QAB 5545E PDF

    Untitled

    Abstract: No abstract text available
    Text: IRGBC20FD2 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)16 Absolute Max. Power Diss. (W)60 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case2.1 Thermal Resistance Junc-Amb.80 g(fe) Min. (S) Trans. admitt.2.9


    Original     		IRGBC20FD2 delay61nà time44nà time170nà PDF

    IRGBC20FD2

    Abstract: D-12 T4 diode 18-A
    Text: IRGBC20FD2 90% Vge +Vge Vce Same type device as D.U.T. Ic 90% Ic 10% Vce Ic 5% Ic 430µF 80% of Vce td off D.U.T. tf Eoff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1+5µS Vce ic dt


    Original     		IRGBC20FD2 O-220AB C-100 IRGBC20FD2 D-12 T4 diode 18-A PDF

    C5320

    Abstract: IRGBC20F D-12 mosfet 600v 10a to-220ab *gBC20f
    Text: PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.8V


    Original     		IRGBC20F 10kHz) O-220AB C5320 IRGBC20F D-12 mosfet 600v 10a to-220ab *gBC20f PDF

    IRGBC20FD2

    Abstract: diode 18b diode 18C D-12 DIODE T4 T4 DIODE diode c100 18-A
    Text: IRGBC20FD2 90% Vge +Vge Vce Same type device as D.U.T. Ic 90% Ic 10% Vce Ic 5% Ic 430µF 80% of Vce td off D.U.T. tf Eoff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1+5µS Vce ic dt


    Original     		IRGBC20FD2 O-220AB C-100 IRGBC20FD2 diode 18b diode 18C D-12 DIODE T4 T4 DIODE diode c100 18-A PDF

    *gBC20f

    Abstract: 20MS D-12 IRGBC20F
    Text: PD - 9.686A International SüRectifier IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-Ioss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


    OCR Scan     		IRGBC20F 10kHz) O-220AB RGBC20F TQ-220AB *gBC20f 20MS D-12 PDF

    mosfet 600v 10a to-220ab

    Abstract: No abstract text available
    Text: PD - 9.686A kitemational ioR1Rectifier IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


    OCR Scan     		10kHz) IRGBC20F -220AB O-22QAB mosfet 600v 10a to-220ab PDF

    D-12

    Abstract: IRGBC20F
    Text: PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.8V


    Original     		IRGBC20F 10kHz) O-220AB D-12 IRGBC20F PDF

    Irgbc20fd2

    Abstract: No abstract text available
    Text: International PD - 9.788 ^Rectifier IRGBC20FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECO VERY DIODE Fast CoPack IGBT Features • Switching-loss rating includes all “tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


    OCR Scan     		IRGBC20FD2 10kHz) T0-22QAB C-100 Irgbc20fd2 PDF

    IRGBC20FD2

    Abstract: No abstract text available
    Text: kitemational S Rectifier PD - 9.788 IRGBC20FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


    OCR Scan     		10kHz) IRGBC20FD2 TQ-220AB C-100 IRGBC20FD2 PDF

    IRGKI200F06

    Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
    Text: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U


    Original     		IRGB420U IRGP420U IRGB430U IRGP430U IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGKI200F06 IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06 PDF

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


    Original     		OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103 PDF

    IRGKI200F06

    Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
    Text: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications


    Original     		O-220AB IRG4BC40S IRGBC20S IRGBC30S IRGBC40S O-247AC IRG4PC40S IRGPC30S IRGPC40S 10-30kHz) IRGKI200F06 IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06 PDF

    9544 transistor

    Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


    Original     		T0247 T0220 assIRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U IRG4BC30UD 9544 transistor TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT PDF

    3 phase dc control ir2130

    Abstract: igbt driver ir2130 circuit IR2130S smd 3 phase rectifier bridge MP816 Design Tips for IR2130 IR2130J IRGBC30KD AN-985 IR2130 APPLICATIONS
    Text: DESIGN TIPS International Rectifier DESIGN TIPS DT 93-6AJ ・APPLICATION ENG・ ・233 KANSAS ST.・ ・EL SEGUNDO,CA.90245・ ・TEL（310） ）322-3331・ ・FAX（310） ）322-3332 INTERNATIONAL RECTIFIER・ モーター駆動用に極小化した パワー･エレクトロニクス


    Original     		93-6AJ IR2130 O-220 IRGBC30UD2-S) IR2130S IR2130J Diagram-IR2130S) Diagram-IR2130J) 3 phase dc control ir2130 igbt driver ir2130 circuit smd 3 phase rectifier bridge MP816 Design Tips for IR2130 IRGBC30KD AN-985 IR2130 APPLICATIONS PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT ТРАНЗИСТОРЫ Наименование HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3 HGTP3N60B3 HGTP7N60B3 HGTP7N60B3D IRG4BC20UD IRG4BC30F IRG4BC30U IRG4BC30UD


    Original     		HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3 PDF

    IRGKI120F06

    Abstract: No abstract text available
    Text: International ËüRectifier IGBTs STANDARD Low VCE on IGBTs for Low Frequency (DC—1kHz) Power Applications Part Number •c Continuous Collector Current V CES Collector to Emitter Voltage M ax v CE(on) Collector to Emitter Voltage T c = 25°C T c = 100°C


    OCR Scan     		IRGBC20S IRGBC30S IRGBC40S IRGPC40S IRGPC50S T0-220AB IRGBC20F IRGBC30F GBC20FD2 IRGBC30FD2 IRGKI120F06 PDF

    IRGPH50U

    Abstract: IRGPH50FD2 IRGB420UD2 IRGTA090F06 IRGP420UD2 IRGTI090U06 IRGBC30U irgph40fd1 IRGTI140U06 irgpc50m
    Text: Co-Packs - IGBT's Other Products Fro m IR Fast Speed Co-Packs Applications: Motor Controls, U P S ’s Industrial V B R C E S C o lle c to r to P a rt N u m b e r E m itte r B re a k d o w n V C E (o n ) 'c C o lle c to r to C o n tin u o u s C o llec tor


    OCR Scan     		IRGBC20FD2 IRGBC30FD2 IRGBC30FD1 T0-220 IRGPC40FD2 IRGPC40FD1 IRGPC50FD2 IRGTI050U06 IRGTI090U06 IRGTI115U06 IRGPH50U IRGPH50FD2 IRGB420UD2 IRGTA090F06 IRGP420UD2 IRGBC30U irgph40fd1 IRGTI140U06 irgpc50m PDF

    "AN-978" IR2110

    Abstract: IR2110 CHOPPER AN937A AN-978 IR2110 bc40f AN-937A IR2110 LDIC NOTES ENG233 AN944A
    Text: APPLICATION NOTES Savings tips that add value to your designs. INTERNATIONAL RECTIFIER¥APPLICATION ENG¥233 KANSAS ST.¥EL AN-990AJ IGBTの応用特性 HEXFREDはInternational Rectifier社の商標 By Steve Clemente


    Original     		AN-990AJ AN-983AIGBT AN-983A IRGBC40F IR2110 83E-02 17E-04 13E-04 9E-03 "AN-978" IR2110 IR2110 CHOPPER AN937A AN-978 IR2110 bc40f AN-937A IR2110 LDIC NOTES ENG233 AN944A PDF

    IRFBE30 equivalent

    Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
    Text: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566


    Original     		May-97 Sep-95 Sep-94 IRFBE30 equivalent irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540 PDF

    IRGDDN600M06

    Abstract: IRGPH20K IRGPC20F IRGPF30F irgpc50md2 *gBC20f IRGPC50U
    Text: Insulated Gate BiPolar Transistors — IGBTs and IGBT / UltraFasf Diodes — CoPack Discrete and Module Types 1. 1 0- - 0 Q i w r r Chopper Low Side Switch Single switch witn uiooej Single Switch (without Diode o Current


    OCR Scan     		IRGBF20F IRGPF20F IRGB420U IRGP420U IRGBC20K RGPC20K IRGBC20M IRGPC20M IRGBC20U IRGPC20U IRGDDN600M06 IRGPH20K IRGPC20F IRGPF30F irgpc50md2 *gBC20f IRGPC50U PDF

    10A600V

    Abstract: 1XGH20N60AU1 IGBT cross reference HGTP20N6QB3 IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V
    Text: SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS SIEM ENS IXYS HUfU3NÖ0B3S hü'mSNtäoöä U ltiJ 102 H U IU /N Ö Ü B 3 HGIP12NB0B3 IXGP10N60A U 115J101 IXGH10N60A HGTP20N6QB3 GT25JT01 HGlu2UfJt>063 IXGH20N6QA IXGH24N6QA HU Î J4UNöUt33 IXGH40N60A IXGH50N6ÛA, HU I P^NbUBaU


    OCR Scan     		HGIP12NB0B3 115J101 IXGP10N60A IXGH10N60A HGTP20N6QB3 GT25JT01 IXGH20N6QA IXGH24N6QA IXGH40N60A IXGH50N6 10A600V 1XGH20N60AU1 IGBT cross reference IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V PDF