ITH13C06
Abstract: ITH13C06B T0220AB T0247
Text: ITH13C06 M ITEL High Frequency Powerline N-Channel IGBT S E M IC O N D U C T O R With Ultrafast Diode Supesedes O ctober 1998, version DS5045-1.2 The ITH13C 06 is a very robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range
|
OCR Scan
|
PDF
|
ITH13C06
DS5045-1
DS5045-2
ITH13C06
T0263
T0268
T0220AB
T0247
ITH13C06B
T0220AB
T0247
|
Untitled
Abstract: No abstract text available
Text: ITH13C06 M ITEL High Frequency Powerline N-Channel IGBT SEMICONDUCTOR With Ultrafast Diode Supesedes March 1999, version DS5045-2.1 The IT H 1 3 C 0 6 is a v e ry ro b u s t n -c h a n n e l, enhancem ent mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range
|
OCR Scan
|
PDF
|
ITH13C06
DS5045-3
DS5045-2
|