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    TRANSISTOR 1352 Search Results

    TRANSISTOR 1352 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1352 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC945

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR  DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor.  FEATURES * Collector-Emitter voltage:


    Original     		PDF 2SC945 2SC945 150mA 2SA733 2SC945L-x-T92-B 2SC945G-x-T92-B 2SC945L-x-T92-K 2SC945G-x-T92-K QW-R201-005

    mmbt945

    Abstract: MMBT733 audio output TRANSISTOR NPN 094B BVCBO-50V
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR „ DESCRIPTION The UTC MMBT945 is an audio frequency amplifier high frequency OSC NPN transistor. „ FEATURES * Collector-Emitter Voltage:


    Original     		PDF MMBT945 MMBT945 150mA MMBT733 MMBT945G-x-AE3-R MMBT945G-x-AL3-R OT-23 OT-323 QW-R206-094 MMBT733 audio output TRANSISTOR NPN 094B BVCBO-50V

    2sc945

    Abstract: 2SC945L 2SC945 R
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION 1 The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. TO-92 FEATURES * Collector-Emitter voltage:


    Original     		PDF 2SC945 2SC945 150mA 2SA733 2SC945L 2SC945-x-T92-B 2SC945L-x-T92-B 2SC945-x-T92-K 2SC945L-x-T92-K 2SC945L 2SC945 R

    2SC945

    Abstract: 2SC945L 2SC945G transistor 2sc945 2SC945 transistor 2SC945 DATASHEET 2Sc945 equivalent 2sC945 npn transistor 2SC945 Q equivalent 2SC945 R
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR „ DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. „ FEATURES * Collector-Emitter voltage:


    Original     		PDF 2SC945 2SC945 150mA 2SA733 2SC945L 2SC945G 2SC945-x-T92-B 2SC945-x-T92-K 2SC945L-x-T92-B 2SC945L-x-T92-K 2SC945L 2SC945G transistor 2sc945 2SC945 transistor 2SC945 DATASHEET 2Sc945 equivalent 2sC945 npn transistor 2SC945 Q equivalent 2SC945 R

    mmbt945

    Abstract: MMBT733 audio output TRANSISTOR NPN BVCBO-50V Amplifier Transistor NPN 40V 100mA
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR „ DESCRIPTION The UTC MMBT945 is an audio frequency amplifier high frequency OSC NPN transistor. „ FEATURES * Collector-Emitter voltage:


    Original     		PDF MMBT945 MMBT945 150mA MMBT733 MMBT945L MMBT945G MMBT945-x-AE3-R MMBT945-x-AL3-R MMBT945L-x-AE3-R MMBT945G-x-AE3-R MMBT733 audio output TRANSISTOR NPN BVCBO-50V Amplifier Transistor NPN 40V 100mA

    2SC945 P

    Abstract: 2sc945 npn transistor
    Text: UTC 2SC945 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. 1 FEATURES *Collector-Emitter voltage: BVCBO=50V *Collector current up to 150mA


    Original     		PDF 2SC945 2SC945 150mA 2SA733 QW-R201-005 2SC945 P 2sc945 npn transistor

    2SC945

    Abstract: 2SC945 DATASHEET 2SC945 Q equivalent 2SA733 2sc945 npn transistor
    Text: UTC 2SC945 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. 1 FEATURES *Collector-Emitter voltage: BVCBO=50V *Collector current up to 150mA


    Original     		PDF 2SC945 2SC945 150mA 2SA733 QW-R201-005 2SC945 DATASHEET 2SC945 Q equivalent 2SA733 2sc945 npn transistor

    2SD596

    Abstract: transistor dv4 2SB624
    Text: 2SD596 SILICON TRANSISTOR SOT-23 3 AUDIO FREQUENCY POWER AMPLIFIER 1 NPN SILICON EPITAXIAL TRANSISTOR 2 MINI MOLD 1. FEATURES 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.95 2.9 1.9 Complimentary to 2SB624 PNP Transistor 0.4 High DC current gain. HFE:200 TYP. VCE=1.0V, IC=100mA


    Original     		PDF 2SD596 OT-23 2SB624 100mA) 200mA 2SD596 transistor dv4

    2SD596 dv3

    Abstract: marking DV4 2SB624 2SD596 2sd59 transistor dv4
    Text: 2SD596 SILICON TRANSISTOR SOT-23 3 1 AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 2 MINI MOLD 1. FEATURES 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.95 2.9 1.9 Complimentary to 2SB624 PNP Transistor 0.4 High DC current gain. HFE:200 TYP. VCE=1.0V, IC=100mA


    Original     		PDF 2SD596 OT-23 2SB624 100mA) 200mA 2SD596 dv3 marking DV4 2SD596 2sd59 transistor dv4

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR  DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits.  FEATURES * Low Collector Saturation Voltage:


    Original     		PDF 2SB798 2SB798 -100mA 2SB798G-x-AB3-R OT-89 QW-R208-020

    dk SOT-89

    Abstract: dk SOT89 2SB798-L
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR „ DESCRIPTION 1 The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. „ FEATURES * Low Collector Saturation Voltage:


    Original     		PDF 2SB798 2SB798 OT-89 -100mA 2SB798L-X-AB3-R 2SB798G-X-AB3-R 2SB798L-X-AB3-R QW-R208-020 dk SOT-89 dk SOT89 2SB798-L

    2sa733

    Abstract: 2SC945 DATASHEET 2SC945
    Text: UTC 2SA733 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA733 is an low frequency amplifier. 1 FEATURES *Collector-Emitter voltage: BVCBO=-50V *Collector current up to –150mA *High hFE linearity


    Original     		PDF 2SA733 2SA733 150mA 2SC945 2SC945 DATASHEET 2SC945

    2SA733

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA733 PNP SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA733 is a low frequency amplifier.  FEATURES * Collector-emitter voltage: BVCEO=-50V * Collector current up to -150mA


    Original     		PDF 2SA733 2SA733 -150mA 2SC945 2SA733L-x-AE3-R 2SA733G-x-AE3-R 2SA733L-x-AL3-R 2SA733G-x-AL3-R 2SA733L-x-T92-R 2SA733G-x-T92-R

    2SA733

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA733 PNP SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA733 is a low frequency amplifier.  FEATURES * Collector-emitter voltage: BVCEO=-50V * Collector current up to -150mA


    Original     		PDF 2SA733 2SA733 -150mA 2SC945 2SA733L-x-AE3-R 2SA733G-x-AE3-R 2SA733L-x-AL3-R 2SA733G-x-AL3-R 2SA733L-x-T92-B 2SA733G-x-T92-B

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. 1 FEATURES *Low Collector Saturation Voltage: VCE sat < -0.4V (Ic= -1.0A,IB=-100mA )


    Original     		PDF 2SB798 2SB798 -100mA OT-89 QW-R208-020

    dk qw

    Abstract: 2SB798
    Text: UTC 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. 1 FEATURES *Low Collector Saturation Voltage: VCE sat < -0.4V (Ic= -1.0A,IB=-100mA )


    Original     		PDF 2SB798 2SB798 -100mA OT-89 QW-R208-020 dk qw

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SA733 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA733 is an low frequency amplifier. 1 FEATURES *Collector-Emitter voltage: BVCBO=-50V *Collector current up to –150mA *High hFE linearity


    Original     		PDF 2SA733 2SA733 150mA 2SC945 QW-R201-003

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SA733 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA733 is an low frequency amplifier. 1 FEATURES *Collector-Emitter voltage: BVCBO=-50V *Collector current up to –150mA *High hFE linearity


    Original     		PDF 2SA733 2SA733 150mA 2SC945 QW-R201-003

    D1616A

    Abstract: d1616 a D1616 transistor d1616a TRANSISTOR D1616 MMBT1616A MMBT1616 D1616 marking transistor MMBT1616AL utc 1616
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1616/A NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 3 DESCRIPTION * Audio frequency power amplifier * Medium speed switching 1 2 SOT-23 *Pb-free plating product number: MMBT1616L/MMBT16AL ORDERING INFORMATION Order Number


    Original     		PDF MMBT1616/A OT-23 MMBT1616L/MMBT16AL MMBT1616-x-AE3-R MMBT1616L-x-AE3-R MMBT1616A-x-AE3-R MMBT1616AL-x-AE3-R D1616A d1616 a D1616 transistor d1616a TRANSISTOR D1616 MMBT1616A MMBT1616 D1616 marking transistor MMBT1616AL utc 1616

    D1616A

    Abstract: utc d1616a d1616 TRANSISTOR D1616 transistor d1616a 2sd1616 silicon transistor npn d1616 transistor
    Text: UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 TO-92 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150


    Original     		PDF 2SD1616/A D1616 D1616A width10ms, QW-R201-008 utc d1616a TRANSISTOR D1616 transistor d1616a 2sd1616 silicon transistor npn d1616 transistor

    pnp transistor 6V

    Abstract: 2SA733
    Text: UTC 2SA733 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION 3 The UTC 2SA733 is an low frequency amplifier. 1 FEATURES *Collector-Emitter voltage: BVCBO=-50V *Collector current up to –150mA *High hFE linearity


    Original     		PDF 2SA733 2SA733 150mA 2SC945 OT-23 QW-R206-068 pnp transistor 6V

    D1616A

    Abstract: d1616 transistor d1616a utc d1616a UTC d1616
    Text: UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150


    Original     		PDF 2SD1616/A OT-89 D1616 D1616A width10ms, QW-R208-015 transistor d1616a utc d1616a UTC d1616

    D1616A

    Abstract: utc d1616a d1616 transistor d1616a TRANSISTOR D1616 npn switching transistor Ic 100mA D1616A g TRANSISTOR pc 135 audio output TRANSISTOR NPN
    Text: UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150


    Original     		PDF 2SD1616/A OT-89 D1616 D1616A width10ms, 100mA 100mA utc d1616a transistor d1616a TRANSISTOR D1616 npn switching transistor Ic 100mA D1616A g TRANSISTOR pc 135 audio output TRANSISTOR NPN

    2SA733

    Abstract: No abstract text available
    Text: UTC 2SA733 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION 3 The UTC 2SA733 is an low frequency amplifier. 1 FEATURES *Collector-Emitter voltage: BVCBO=-50V *Collector current up to –150mA *High hFE linearity


    Original     		PDF 2SA733 2SA733 150mA 2SC945 OT-23 QW-R206-068