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    TRANSISTOR 1335 Search Results

    TRANSISTOR 1335 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1335 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


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    PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    MS-012AA

    Abstract: PHK12NQ03LT
    Text: PHK12NQ03LT TrenchMOS logic level FET Rev. 01 — 22 March 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1technology. Product availability: PHK12NQ03LT in SOT96-1 SO8 .


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    PDF PHK12NQ03LT M3D315 PHK12NQ03LT OT96-1 OT96-1, MS-012AA

    HP optocoupler 3000

    Abstract: E55361 HCPL-3000 V01L V02H 5965-3584E
    Text: OPTOCOUPLERS H Power Bipolar Transistor Base Drive Optocoupler Technical Data HCPL-3000 Features Description • High Output Current IO2 2.0 A Peak, 0.6 A Continuous IO1 (1.0 A Peak, 0.5 A Continuous) • 1.5 kV/ µs Minimum Common Mode Rejection (CMR) at


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    PDF HCPL-3000 HCPL-3000 HP optocoupler 3000 E55361 V01L V02H 5965-3584E

    Untitled

    Abstract: No abstract text available
    Text: SI4884 TrenchMOS logic level FET Rev. 01 — 15 March 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: SI4884 in SOT96-1 SO8 .


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    PDF SI4884 M3D315 SI4884 OT96-1 OT96-1, MBK187 MBB076

    Untitled

    Abstract: No abstract text available
    Text: PI4884 TrenchMOS logic level FET Rev. 02 — 12 April 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PI4884 in SOT96-1 SO8 .


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    PDF PI4884 M3D315 PI4884 OT96-1 OT96-1,

    Untitled

    Abstract: No abstract text available
    Text: PI4884 TrenchMOS logic level FET Rev. 01 — 15 March 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PI4884 in SOT96-1 SO8 .


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    PDF PI4884 M3D315 PI4884 OT96-1 OT96-1, MBK187 MBB076

    SI4884

    Abstract: MS-012AA
    Text: SI4884 TrenchMOS logic level FET Rev. 02 — 12 April 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI4884 in SOT96-1 SO8 .


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    PDF SI4884 M3D315 SI4884 OT96-1 OT96-1, MS-012AA

    ultra low igss

    Abstract: PMN23UN
    Text: PMN23UN µTrenchMOS ultra low level FET Rev. 01 — 16 June 2004 M3D302 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • TrenchMOS™ technology


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    PDF PMN23UN M3D302 OT457 ultra low igss PMN23UN

    E55361

    Abstract: HCPL-3000 V01L V02H
    Text: H Power Bipolar Transistor Base Drive Optocoupler Technical Data HCPL-3000 Features Description • High Output Current IO2 2.0 A Peak, 0.6 A Continuous IO1 (1.0 A Peak, 0.5 A Continuous) • 1.5 kV/ µs Minimum Common Mode Rejection (CMR) at VCM = 600 V


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    PDF HCPL-3000 HCPL-3000 E55361 V01L V02H

    PHK12NQ03LT

    Abstract: No abstract text available
    Text: PHK12NQ03LT N-channel TrenchMOS logic level FET Rev. 02 — 02 March 2004 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Low on-state resistance


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    PDF PHK12NQ03LT M3D315 OT96-1 MBB076 PHK12NQ03LT

    V2bF

    Abstract: Digital Alarm Clock digital clock with alarm STM-16 TX3S35 TX3S36 TX5S34
    Text: TX5S34, TX3S35, TX3S36 2.5 Gb/s Optical Transmitter Module Nanovation’s 1510nm Supervise Receive Photoelectronic Module incorporates a positive-intrinsic-negative PIN diode or a field effect transistor (FET) as well as an IC main amplifier, shaper and equalizer. The product, which can be used for DWDM


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    PDF TX5S34, TX3S35, TX3S36 1510nm V2bF Digital Alarm Clock digital clock with alarm STM-16 TX3S35 TX5S34

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    2n4427 MOTOROLA

    Abstract: 2N4427
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4427 The R F Line 1 W - 1 7 5 MHz NPN SILICON HIGH FREQUENCY TRANSISTOR HIGH FREQUENCY TRANSISTOR . . . designed fo r am plifier, frequency m ultiplier, or oscillator N PN SILIC O N applications in m ilita ry and industrial equipm ent. Suitable fo r use


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    PDF 2N4427 2n4427 MOTOROLA 2N4427

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION PINNING - SOT428 PIN SYMBOL PARAMETER MAX. UNIT Drain-source voltage Drain current DC Total power dissipation Drain-source on-state resistance 60 12 50 0.15 V A W n MIN.


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    PDF PHD3055E OT428

    d2396

    Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
    Text: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .


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    PDF 2SK2503 RK7002 TC363TS DTC314TS TC114G 100mA TA124G DTC144G d2396 TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460

    transistor marking R2s

    Abstract: AMI siemens BFR93AW k150t
    Text: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA 1=B Q62702-F1489 h R2s m BFR 93AW ro ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF Q62702-F1489 OT-323 900MHz transistor marking R2s AMI siemens BFR93AW k150t

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPS6428 NPN Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating C ollector-Em itter Voltage C ollector-Base Voltage Em itter-Base Voltage Symbol Value Unit v CEO 50 Vdc VCBO 60 Vdc v EBO 6.0 Vdc Collector Current — Continuous


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    PDF MPS6428 b3b75SS

    Untitled

    Abstract: No abstract text available
    Text: Wfipl m L ftm HEW LETT PACKARD Power Bipolar Transistor Base Drive Optocoupler Technical Data HCPL-3000 Features Description • High Output Current I q 2 2 . 0 A Peak, 0 . 6 A Continuous I0 1 ( 1 . 0 A Peak, 0 . 5 A Continuous) • 1.5 kV/|is Minimum Common


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    PDF HCPL-3000 HCPL-3000

    Untitled

    Abstract: No abstract text available
    Text: H EW LETT PACKARD 0PT 0C 0U P L E R S m Power Bipolar Transistor Base Drive Optocoupler Technical Data HCPL-3000 Features Description • High Output Current Iq 2 2 . 0 A Peak, 0 . 6 A Continuous I01 (1.0 A Peak, 0.5 A Continuous) • 1.5 kV/jis Minimum Common


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    PDF HCPL-3000 HCPL-3000 00157b0

    Untitled

    Abstract: No abstract text available
    Text: 0PT0C0UPLERS What HEW LETT I "KM P A C K A R D Power Bipolar Transistor Base Drive Optocoupler Technical Data HCPL-3000 F eatures D escription • High Output Current The H CPL-3000 c o n sists o f a Silicon-doped GaAs LED optically coupled to an integ rated circuit


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    PDF HCPL-3000 CPL-3000

    smd transistor xf

    Abstract: smd 809 x transistor blt50 4F smd transistor transistor 2222 smd transistor 809 philips Trimmer 60 pf transistor 3B1 smd UHF TRANSISTOR transistor 4F
    Text: P h ilip ^ e m ic o n d u c to r ^ ^ B i 711D Ö 2b G D b 'iB b ö 142 H 1 P H IN ^ P jjo d u c ^ p e c ific a tjo n UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. DESCRIPTION BLT50 QUICK REFERENCE DATA


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    PDF 711062b BLT50 OT223 PINNING-SOT223 MEA222 UEA223 smd transistor xf smd 809 x transistor blt50 4F smd transistor transistor 2222 smd transistor 809 philips Trimmer 60 pf transistor 3B1 smd UHF TRANSISTOR transistor 4F