Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 1300 1B Search Results

    TRANSISTOR 1300 1B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPN1300ANC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1300 1B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ofdm predistortion

    Abstract: CGH21120 transistors cross reference cgh40120F Digital Transistors Cross Reference CGH25120F RF power transistors cross reference GaN on SiC HEMT Pulsed Power Transistor Peak digital Pre-distortion Gan hemt transistor
    Text: May 2009 Short range wireless UWB GPS and satellite  GaN HEMT transistors Advances in high power GaN HEMT transistors By Simon Wood, Carl Platis, Don Farrell, Brad Millon, Bill Pribble, Peter Smith, Ray Pengelly, and Jim Milligan, Cree Inc. G allium nitride (GaN) HEMT based


    Original     		PDF

    TB-756

    Abstract: No abstract text available
    Text: Ultra Low Noise, High IP3 Monolithic Amplifier 50Ω CMA-162LN+ 0.7 to 1.6 GHz The Big Deal • • • • • Ceramic, Hermetically Sealed, Nitrogen filled Low profile case, .045” high Ultra Low Noise Figure, 0.5 dB High Gain, High IP3 Class 1B HBM ESD 500V


    Original     		PDF CMA-162LN+ DL1721 TB-756

    1090mhz

    Abstract: JESD22-A114 PRA1000
    Text: PRELIMINARY Long & Short Pulse 960-1215Mz 1025-1150MHz 1030-1090MHz PRA1000 300 Watt, 36V, Pulsed LDMOS RF Power Transistor DME, TACAN, TCAS, MODE S, Introduction Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: Sym Value Unit


    Original     		PDF 960-1215Mz 1025-1150MHz 1030-1090MHz PRA1000 PRA1000 52-j1 1090mhz JESD22-A114

    Untitled

    Abstract: No abstract text available
    Text: AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19090E Hz--1990

    100B100JCA500X

    Abstract: AGR19090E AGR19090EF AGR19090EU JESD22-C101A R190 19090
    Text: AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19090E Hz--1990 AGR19090E AGR19090EU AGR19090EF 100B100JCA500X AGR19090EF AGR19090EU JESD22-C101A R190 19090

    AGR26125E

    Abstract: AGR26125EF AGR26125EU AGR26125XF AGR26125XU JESD22-C101A
    Text: Preliminary Product Brief April 2004 AGR26125E 125 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications


    Original     		PDF AGR26125E AGR26125E AGR26125EU AGR26125EF PB04-081RFPP PB03-192RFPP) AGR26125EF AGR26125EU AGR26125XF AGR26125XU JESD22-C101A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Brief December 2003 AGR26125E 125 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide


    Original     		PDF AGR26125E AGR26125EU AGR26125EF AGR261g PB03-192RFPP

    100B100JCA500X

    Abstract: AGR19090E AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A
    Text: Preliminary Data Sheet March 2004 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19090E Hz--1990 AGR19090E DS04-079RFPP DS04-034RFPP) 100B100JCA500X AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A

    100B100JCA500X

    Abstract: AGR19090E AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A
    Text: Preliminary Data Sheet April 2004 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19090E Hz--1990 AGR19090E DS04-160RFPP DS04-079RFPP) 100B100JCA500X AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A

    HEDS 1000

    Abstract: HBCS-A999 high resolution reflective bar code lens sensor Reflective Optical Sensor focused HEDS-1300 HEDS-1200 HBCS-4999 HBCS-A998 HEDS1200 HEDS1300
    Text: H Optical Reflective Sensors Technical Data HEDS-1200 High Resolution Infrared Sensor HEDS-1300 Precision Resolution Sensor Features Description • Focused Emitter and Detector in a Single Package • TO5 Package • Binning of Sensors by Photocurrent Ipr


    Original     		PDF HEDS-1200 HEDS-1300 HEDS1300 HEDS 1000 HBCS-A999 high resolution reflective bar code lens sensor Reflective Optical Sensor focused HBCS-4999 HBCS-A998 HEDS1200

    White Paint

    Abstract: 3 pin IR sensor pin connection gold detector circuit free Reflective Optical Sensor high resolution HBCS-4999 HBCS-A998 HBCS-A999 TRansistor 1300 free HEDS-1200 HEDS1300
    Text: Optical Reflective Sensors Technical Data HEDS-1200 High Resolution Infrared Sensor HEDS-1300 Precision Resolution Sensor Features Description • Focused Emitter and Detector in a Single Package • TO5 Package • Binning of Sensors by Photocurrent Ipr


    Original     		PDF HEDS-1200 HEDS-1300 HEDS1300 5965-5947E 5966-1624E White Paint 3 pin IR sensor pin connection gold detector circuit free Reflective Optical Sensor high resolution HBCS-4999 HBCS-A998 HBCS-A999 TRansistor 1300 free

    relay base 90.73

    Abstract: PS7241C-1A on chip laser mW 1480 nm PS2533 ps2501
    Text: CD-ROM Optical Device CD-ROM X13769XJ2V0CD00 12-1 Optical Device Photocoupler Tr. Output Type Standard Type Single Tr. (1/2) Part Features Number PS2501-1 High isolation voltage Absolute Maximum Ratings Electrical Characteristics BV IF VCEO IC CTR t r, t f


    Original     		PDF X13769XJ2V0CD00 PS2501-1 PS2501-2 PS2501-4 16-pin PS2511-1 PS2511-2 PS2511-4 PS2561-1 relay base 90.73 PS7241C-1A on chip laser mW 1480 nm PS2533 ps2501

    "infrared distance sensor" 1997

    Abstract: 5966-1624E Reflective Optical Sensor high resolution spot light size photodiode HP transistor cross reference
    Text: Optical Reflective Sensors Technical Data HEDS-1200 High Resolution Infrared Sensor HEDS-1300 Precision Resolution Sensor Features Description • Focused Emitter and Detector in a Single Package • TO5 Package • Binning of Sensors by Photocurrent Ipr


    Original     		PDF HEDS-1200 HEDS-1300 HEDS1300 5965-5947E 5966-1624E "infrared distance sensor" 1997 5966-1624E Reflective Optical Sensor high resolution spot light size photodiode HP transistor cross reference

    5-phase drive STEPPER MOTOR

    Abstract: 3770A PBL3770A BYV27 PBL3770ANS 5-phase microstepping
    Text: February 1999 PBL 3770A High Performance Stepper Motor Drive Circuit Description Key Features PBL 3770A is a bipolar monolithic circuit intended to control and drive the current in one winding of a stepper motor. It is a high power version of PBL 3717 and special


    Original     		PDF 1522-PBL 3770/6Uen. 16-pin 20-pin 28-pin SE-164 5-phase drive STEPPER MOTOR 3770A PBL3770A BYV27 PBL3770ANS 5-phase microstepping

    F1 J37

    Abstract: C14A AGR26125E AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz
    Text: AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications


    Original     		PDF AGR26125E AGR26125E AGR26125EU AGR26125EF F1 J37 C14A AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz

    1BW TRANSISTOR

    Abstract: transistor 1BW E5771 R928, hamamatsu
    Text: D-TYPE ACTIVE MODULE E5771-01 for 28 mm Side-on PMT The E5771-01 is a voltage divider to operate a 28 mm Side-on photomultiplier tube. The compact configuration is convenient to attach directly on tracing circuit board. Additionally, the built-in circuit utilizes


    Original     		PDF E5771-01 E5771-01 SE-171-41 TACC1050E01 1BW TRANSISTOR transistor 1BW E5771 R928, hamamatsu

    M0C3022

    Abstract: M0C3021 M0C3023 H22L BPW 56 photo H11FI H74AI H11M4 21ab H2482
    Text: Quick-Reference Product Guide Selection Charts INFRARED EMITTERS TYPE NO. y & 54A S Ä j f # / 54 / JV V / jL & s /s s /^ s ^ 1 N 6 26 4 1N 6 26 S 1 N6266 CQ X 1 4 CQ X1 5 CQX16 CQ X1 7 FSD1 FSD 2 FSD3 F5E1 FSE2 F5E3 F5F1 F5G1 IE D 5 5 C L ED S5 B LED56 L ED SSC F


    OCR Scan     		PDF N6266 CQX16 LED56 LED56F H23A1 H23A2 H23B1 H23L1 M0C3022 M0C3021 M0C3023 H22L BPW 56 photo H11FI H74AI H11M4 21ab H2482

    BC 3205 transistor

    Abstract: TRANSISTOR BC 3205 BC 187 TRANSISTOR WJ-CA38-1 TRANSISTOR BC 174 D 92 M WJ-A38 CA381 transistor bc 248 SMA38-1
    Text: WJ-A38-1 /SMA38-1 A 3 8 -1 10 to 2000 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +18 dBm TYP. HIGH THIRD ORDER I.P.: +30 dBm (TYP.) WIDE BANDWIDTH: 10 - 2000 MHz -m m _ S n -"« v i ^ i W* *1b*t*-a-


    OCR Scan     		PDF WJ-A38-1 /SMA38-1 A38-1 000705ti BC 3205 transistor TRANSISTOR BC 3205 BC 187 TRANSISTOR WJ-CA38-1 TRANSISTOR BC 174 D 92 M WJ-A38 CA381 transistor bc 248 SMA38-1

    LG TV flyback transformer

    Abstract: BU108 lg yoke transistor BU 109 J3480 MJ3480 bu 2990 LG flyback lg flyback transformer tv
    Text: BUI08 SILICON MJ3480 H O RIZO N TA L D E FL E C T IO N SILIC O N TR A N S IS TO R S 5.0 A M PERE . . . designed for use ¡n large screen color television receivers. T R IP L E D IFF U S E D POWER TR A N SISTO R S NPN SILICO N • Collector-Emitter Voltage —


    OCR Scan     		PDF MJ3480 BU108 MJ3480 J3480 LG TV flyback transformer lg yoke transistor BU 109 bu 2990 LG flyback lg flyback transformer tv

    mmic a08

    Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
    Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18


    OCR Scan     		PDF

    TRANSISTOR BC 448 smd

    Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
    Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors


    OCR Scan     		PDF BRY61 BRY62 OT143B TRANSISTOR BC 448 smd JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A

    BU206

    Abstract: BU205 BU205 equivalent BU204 LC2D
    Text: NOT OROL A SC 6 3 6 7 2 54 ÍXSTRS/R MOTOROLA SC D Ëf|b3b7S54 F3- XSTRS/R F 96D 80660 □□flObbO D T - 3 3 - II MOTOROLA BU204 BU205 SEM ICONDUCTOR TECHNICAL DATA ivfil )t ‘s i " i l c»i •‘-¡ I ) ;K a 2S AMPERE NPN SILICON POWER TRANSISTO RS H O R IZO N TA L D EFLECTIO N TRANSISTO R


    OCR Scan     		PDF b3b7S54 BU204 BU205 BU204 B367254 BU204, r-33-// 14-MAXIMUM BU206 BU205 BU205 equivalent LC2D

    BU206

    Abstract: BU205
    Text: Dlf|b3b7S54 □□flObbO T [ATOROLA SC iXSTRS/R F36 3 6 7 2 5 4 , MOTOROLA SC XSTRS/R F 96D 80660 D T - 3 S - MOTOROLA If BU204 BU205 SEMICONDUCTOR TECHNICAL DATA ; ÄiSül ) ( ».*•>i g i i <»i •.*-» *1 > í » t á : i 8 l H H ' t , 2JS AM PERE NPN SILICON


    OCR Scan     		PDF b3b7S54 BU204 BU205 --BU204 --BU205 BU206 BU205

    2SK1352

    Abstract: 10R1B
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ar-MOSH 2SK1352 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS U nit ¡n mn 1Q3KAI. #Z.2±<i2 FEATURES: * Low Drain-Source ON Resistance : RDS(0N)= 0.65Q (Typ.)


    OCR Scan     		PDF 2SK1352 -100A/jtis 2SK1352 10R1B