TRANSISTOR 1300 1B Search Results

TRANSISTOR 1300 1B Result Highlights (5)

Part	Manufacturer	Description
XPN1300ANC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF)
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold

TRANSISTOR 1300 1B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
M0C3022 Abstract: M0C3021 M0C3023 H22L BPW 56 photo H11FI H74AI H11M4 21ab H2482 Text: Quick-Reference Product Guide Selection Charts INFRARED EMITTERS TYPE NO. y & 54A S Ä j f # / 54 / JV V / jL & s /s s /^ s ^ 1 N 6 26 4 1N 6 26 S 1 N6266 CQ X 1 4 CQ X1 5 CQX16 CQ X1 7 FSD1 FSD 2 FSD3 F5E1 FSE2 F5E3 F5F1 F5G1 IE D 5 5 C L ED S5 B LED56 L ED SSC F	OCR Scan	N6266 CQX16 LED56 LED56F H23A1 H23A2 H23B1 H23L1 M0C3022 M0C3021 M0C3023 H22L BPW 56 photo H11FI H74AI H11M4 21ab H2482	PDF
ofdm predistortion Abstract: CGH21120 transistors cross reference cgh40120F Digital Transistors Cross Reference CGH25120F RF power transistors cross reference GaN on SiC HEMT Pulsed Power Transistor Peak digital Pre-distortion Gan hemt transistor Text: May 2009 Short range wireless UWB GPS and satellite GaN HEMT transistors Advances in high power GaN HEMT transistors By Simon Wood, Carl Platis, Don Farrell, Brad Millon, Bill Pribble, Peter Smith, Ray Pengelly, and Jim Milligan, Cree Inc. G allium nitride (GaN) HEMT based	Original		PDF
BC 3205 transistor Abstract: TRANSISTOR BC 3205 BC 187 TRANSISTOR WJ-CA38-1 TRANSISTOR BC 174 D 92 M WJ-A38 CA381 transistor bc 248 SMA38-1 Text: WJ-A38-1 /SMA38-1 A 3 8 -1 10 to 2000 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +18 dBm TYP. HIGH THIRD ORDER I.P.: +30 dBm (TYP.) WIDE BANDWIDTH: 10 - 2000 MHz -m m _ S n -"« v i ^ i W* 1bt*-a-	OCR Scan	WJ-A38-1 /SMA38-1 A38-1 000705ti BC 3205 transistor TRANSISTOR BC 3205 BC 187 TRANSISTOR WJ-CA38-1 TRANSISTOR BC 174 D 92 M WJ-A38 CA381 transistor bc 248 SMA38-1	PDF
TB-756 Abstract: No abstract text available Text: Ultra Low Noise, High IP3 Monolithic Amplifier 50Ω CMA-162LN+ 0.7 to 1.6 GHz The Big Deal • • • • • Ceramic, Hermetically Sealed, Nitrogen filled Low profile case, .045” high Ultra Low Noise Figure, 0.5 dB High Gain, High IP3 Class 1B HBM ESD 500V	Original	CMA-162LN+ DL1721 TB-756	PDF
LG TV flyback transformer Abstract: BU108 lg yoke transistor BU 109 J3480 MJ3480 bu 2990 LG flyback lg flyback transformer tv Text: BUI08 SILICON MJ3480 H O RIZO N TA L D E FL E C T IO N SILIC O N TR A N S IS TO R S 5.0 A M PERE . . . designed for use ¡n large screen color television receivers. T R IP L E D IFF U S E D POWER TR A N SISTO R S NPN SILICO N • Collector-Emitter Voltage —	OCR Scan	MJ3480 BU108 MJ3480 J3480 LG TV flyback transformer lg yoke transistor BU 109 bu 2990 LG flyback lg flyback transformer tv	PDF
1090mhz Abstract: JESD22-A114 PRA1000 Text: PRELIMINARY Long & Short Pulse 960-1215Mz 1025-1150MHz 1030-1090MHz PRA1000 300 Watt, 36V, Pulsed LDMOS RF Power Transistor DME, TACAN, TCAS, MODE S, Introduction Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: Sym Value Unit	Original	960-1215Mz 1025-1150MHz 1030-1090MHz PRA1000 PRA1000 52-j1 1090mhz JESD22-A114	PDF
mmic a08 Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18	OCR Scan		PDF
TRANSISTOR BC 448 smd Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors	OCR Scan	BRY61 BRY62 OT143B TRANSISTOR BC 448 smd JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A	PDF
Untitled Abstract: No abstract text available Text: AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19090E Hz--1990	PDF
100B100JCA500X Abstract: AGR19090E AGR19090EF AGR19090EU JESD22-C101A R190 19090 Text: AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19090E Hz--1990 AGR19090E AGR19090EU AGR19090EF 100B100JCA500X AGR19090EF AGR19090EU JESD22-C101A R190 19090	PDF
AGR26125E Abstract: AGR26125EF AGR26125EU AGR26125XF AGR26125XU JESD22-C101A Text: Preliminary Product Brief April 2004 AGR26125E 125 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications	Original	AGR26125E AGR26125E AGR26125EU AGR26125EF PB04-081RFPP PB03-192RFPP) AGR26125EF AGR26125EU AGR26125XF AGR26125XU JESD22-C101A	PDF
Untitled Abstract: No abstract text available Text: Preliminary Product Brief December 2003 AGR26125E 125 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide	Original	AGR26125E AGR26125EU AGR26125EF AGR261g PB03-192RFPP	PDF
100B100JCA500X Abstract: AGR19090E AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A Text: Preliminary Data Sheet March 2004 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19090E Hz--1990 AGR19090E DS04-079RFPP DS04-034RFPP) 100B100JCA500X AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A	PDF
100B100JCA500X Abstract: AGR19090E AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A Text: Preliminary Data Sheet April 2004 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19090E Hz--1990 AGR19090E DS04-160RFPP DS04-079RFPP) 100B100JCA500X AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A	PDF

White Paint Abstract: 3 pin IR sensor pin connection gold detector circuit free Reflective Optical Sensor high resolution HBCS-4999 HBCS-A998 HBCS-A999 TRansistor 1300 free HEDS-1200 HEDS1300 Text: Optical Reflective Sensors Technical Data HEDS-1200 High Resolution Infrared Sensor HEDS-1300 Precision Resolution Sensor Features Description • Focused Emitter and Detector in a Single Package • TO5 Package • Binning of Sensors by Photocurrent Ipr	Original	HEDS-1200 HEDS-1300 HEDS1300 5965-5947E 5966-1624E White Paint 3 pin IR sensor pin connection gold detector circuit free Reflective Optical Sensor high resolution HBCS-4999 HBCS-A998 HBCS-A999 TRansistor 1300 free	PDF
BU206 Abstract: BU205 BU205 equivalent BU204 LC2D Text: NOT OROL A SC 6 3 6 7 2 54 ÍXSTRS/R MOTOROLA SC D Ëf\|b3b7S54 F3- XSTRS/R F 96D 80660 □□flObbO D T - 3 3 - II MOTOROLA BU204 BU205 SEM ICONDUCTOR TECHNICAL DATA ivfil )t ‘s i " i l c»i •‘-¡ I ) ;K a 2S AMPERE NPN SILICON POWER TRANSISTO RS H O R IZO N TA L D EFLECTIO N TRANSISTO R	OCR Scan	b3b7S54 BU204 BU205 BU204 B367254 BU204, r-33-// 14-MAXIMUM BU206 BU205 BU205 equivalent LC2D	PDF
relay base 90.73 Abstract: PS7241C-1A on chip laser mW 1480 nm PS2533 ps2501 Text: CD-ROM Optical Device CD-ROM X13769XJ2V0CD00 12-1 Optical Device Photocoupler Tr. Output Type Standard Type Single Tr. (1/2) Part Features Number PS2501-1 High isolation voltage Absolute Maximum Ratings Electrical Characteristics BV IF VCEO IC CTR t r, t f	Original	X13769XJ2V0CD00 PS2501-1 PS2501-2 PS2501-4 16-pin PS2511-1 PS2511-2 PS2511-4 PS2561-1 relay base 90.73 PS7241C-1A on chip laser mW 1480 nm PS2533 ps2501	PDF
"infrared distance sensor" 1997 Abstract: 5966-1624E Reflective Optical Sensor high resolution spot light size photodiode HP transistor cross reference Text: Optical Reflective Sensors Technical Data HEDS-1200 High Resolution Infrared Sensor HEDS-1300 Precision Resolution Sensor Features Description • Focused Emitter and Detector in a Single Package • TO5 Package • Binning of Sensors by Photocurrent Ipr	Original	HEDS-1200 HEDS-1300 HEDS1300 5965-5947E 5966-1624E "infrared distance sensor" 1997 5966-1624E Reflective Optical Sensor high resolution spot light size photodiode HP transistor cross reference	PDF
5-phase drive STEPPER MOTOR Abstract: 3770A PBL3770A BYV27 PBL3770ANS 5-phase microstepping Text: February 1999 PBL 3770A High Performance Stepper Motor Drive Circuit Description Key Features PBL 3770A is a bipolar monolithic circuit intended to control and drive the current in one winding of a stepper motor. It is a high power version of PBL 3717 and special	Original	1522-PBL 3770/6Uen. 16-pin 20-pin 28-pin SE-164 5-phase drive STEPPER MOTOR 3770A PBL3770A BYV27 PBL3770ANS 5-phase microstepping	PDF
BU206 Abstract: BU205 Text: Dlf\|b3b7S54 □□flObbO T [ATOROLA SC iXSTRS/R F36 3 6 7 2 5 4 , MOTOROLA SC XSTRS/R F 96D 80660 D T - 3 S - MOTOROLA If BU204 BU205 SEMICONDUCTOR TECHNICAL DATA ; ÄiSül ) ( ».•>i g i i <»i •.-» *1 > í » t á : i 8 l H H ' t , 2JS AM PERE NPN SILICON	OCR Scan	b3b7S54 BU204 BU205 --BU204 --BU205 BU206 BU205	PDF
socket 775 pinout Abstract: PLCC28 package Text: MC100E193 5V ECL Error Detection/ Correction Circuit The MC100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives the parity of the whole word. The word parity is also	Original	MC100E193 12-bit AND8020 MC100E193 AN1404 AN1405 AN1406 AN1503 AN1504 socket 775 pinout PLCC28 package	PDF
2SK1352 Abstract: 10R1B Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ar-MOSH 2SK1352 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS U nit ¡n mn 1Q3KAI. #Z.2±<i2 FEATURES: * Low Drain-Source ON Resistance : RDS(0N)= 0.65Q (Typ.)	OCR Scan	2SK1352 -100A/jtis 2SK1352 10R1B	PDF
F1 J37 Abstract: C14A AGR26125E AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz Text: AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications	Original	AGR26125E AGR26125E AGR26125EU AGR26125EF F1 J37 C14A AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz	PDF
1BW TRANSISTOR Abstract: transistor 1BW E5771 R928, hamamatsu Text: D-TYPE ACTIVE MODULE E5771-01 for 28 mm Side-on PMT The E5771-01 is a voltage divider to operate a 28 mm Side-on photomultiplier tube. The compact configuration is convenient to attach directly on tracing circuit board. Additionally, the built-in circuit utilizes	Original	E5771-01 E5771-01 SE-171-41 TACC1050E01 1BW TRANSISTOR transistor 1BW E5771 R928, hamamatsu	PDF

TRANSISTOR 1300 1B Search Results

TRANSISTOR 1300 1B Result Highlights (5)

TRANSISTOR 1300 1B Datasheets Context Search

M0C3022

ofdm predistortion

BC 3205 transistor

TB-756

LG TV flyback transformer

1090mhz

mmic a08

TRANSISTOR BC 448 smd

Untitled

100B100JCA500X

AGR26125E

Untitled

100B100JCA500X

100B100JCA500X

White Paint

BU206

relay base 90.73

"infrared distance sensor" 1997

5-phase drive STEPPER MOTOR

BU206

socket 775 pinout

2SK1352

F1 J37

1BW TRANSISTOR