F1 J37
Abstract: C14A AGR26125E AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz
Text: Preliminary Data Sheet August 2004 AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications
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AGR26125E
AGR26125E
AGR26125EF
AGR26125EU
DS04-111RFPP
F1 J37
C14A
AGR26125EF
AGR26125EU
C13B
JESD22-C101A
2595MHz
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Brief December 2003 AGR26125E 125 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide
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AGR26125E
AGR26125EU
AGR26125EF
AGR261g
PB03-192RFPP
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AGR26125E
Abstract: AGR26125EF AGR26125EU AGR26125XF AGR26125XU JESD22-C101A
Text: Preliminary Product Brief April 2004 AGR26125E 125 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications
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Original
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PDF
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AGR26125E
AGR26125E
AGR26125EU
AGR26125EF
PB04-081RFPP
PB03-192RFPP)
AGR26125EF
AGR26125EU
AGR26125XF
AGR26125XU
JESD22-C101A
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