BU206
Abstract: BU205 BU205 equivalent BU204 LC2D
Text: NOT OROL A SC 6 3 6 7 2 54 ÍXSTRS/R MOTOROLA SC D Ëf|b3b7S54 F3- XSTRS/R F 96D 80660 □□flObbO D T - 3 3 - II MOTOROLA BU204 BU205 SEM ICONDUCTOR TECHNICAL DATA ivfil )t ‘s i " i l c»i •‘-¡ I ) ;K a 2S AMPERE NPN SILICON POWER TRANSISTO RS H O R IZO N TA L D EFLECTIO N TRANSISTO R
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b3b7S54
BU204
BU205
BU204
B367254
BU204,
r-33-//
14-MAXIMUM
BU206
BU205
BU205 equivalent
LC2D
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MJ13335
Abstract: je210 JE-21 MJ13330
Text: MOTOROLA SC XSTRS/R F l Z E D | b3b7S54 O O Û S I H S t J MOTOROLA MJ13333 M l13335 S E M IC O N D U C T O R TECHNICAL DATA D e s ig n e r s D a ta . S h e e t 20 A M P E R E SW IT C H M O D E S E R IE S NPN S IL IC O N POWER T R A N S IS T O R S NPN S IL IC O N
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b3b7S54
MJ13333
l13335
MJ13335
je210
JE-21
MJ13330
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BU206
Abstract: BU205
Text: Dlf|b3b7S54 □□flObbO T [ATOROLA SC iXSTRS/R F36 3 6 7 2 5 4 , MOTOROLA SC XSTRS/R F 96D 80660 D T - 3 S - MOTOROLA If BU204 BU205 SEMICONDUCTOR TECHNICAL DATA ; ÄiSül ) ( ».*•>i g i i <»i •.*-» *1 > í » t á : i 8 l H H ' t , 2JS AM PERE NPN SILICON
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b3b7S54
BU204
BU205
--BU204
--BU205
BU206
BU205
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2N5058
Abstract: 2N5059 2N3724 2N3724 MOTOROLA
Text: MOTOROLA SC 1EE 0 | b3b7S54 00ab43G 0 | XSTRS/R F 2N5058 2N50S9 M A X IM U M RATINGS Symbol 2N5058 2N5059 Unit VcEO 300 250 Vdc Collector-Base Voltage VCBO 300 250 Vdc Emitter-Base Voltage V ebo 7.0 Rating Collector-Emitter Voltage 6.0 CASE 79-04, STYLE 1
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b3b7S54
00ab43G
2N5058
2N5059
2N50S9
O-205AD)
2N3724
2N3724 MOTOROLA
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Untitled
Abstract: No abstract text available
Text: M O TO R O L A SC X ST R S / R F böE D • b3b7S54 GGTiMS? Tüfi ■ M O T b MAXIMUM RATINGS Rating Sym b o l V alue Unit C o llecto r-Em itter Voltage V cEO -40 Vdc C o llecto r-Base Voltage V CBO -40 Vdc E m itter-Base Voltage Ve b O - 5 .0 Vdc - 1.5
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2N3762
b3b7S54
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MOTOROLA 1496
Abstract: No abstract text available
Text: M O T O R O L A SC XSTRS/R F 2bE D • b3b7S54 QmiHTfl 1 Order this data sheet by MG25BZ50/D MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA Isolated G ate Bipolar Pow er T ran sistor M odule Energy M anagem ent Series These IGBT's are designed for industrial service under practical operating environments
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b3b7S54
MG25BZ50/D
MG25BZ50
MOTOROLA 1496
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MTPSP25
Abstract: No abstract text available
Text: MOTOROLA SC ÎXSTRS/R F> bôE • b3b?2SM 0 m a b 7 e1 S 4 3 ■ HOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP5P25 Advance Information P o w er Field E ffe c t T ran sisto r P-Channel Enhancement-Mode Silicon Gate If This TMOS Power FET is designed for medium voltage,
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MTP5P25
Y145M
Y145M,
AND-02
314B03
MTPSP25
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MTA5N50E
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTA5N50E Fully Isolated T M O S E-FET ™ Power Field Effect TVansistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is high vo lta g e M O S F E T uses an ad v a n c e d te rm in a tio n
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MTA5N50E
AN1040.
b3b725M
MTA5N50E
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BUT35
Abstract: transistors but35 CM4050
Text: MOTO RO LA SC XSTRS/R F 12E D | b3L75S4 00840130 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 40 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 2 5 0 WATTS
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b3L75S4
T-35-1?
BUT35
BUT35
transistors but35
CM4050
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MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty
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06050L
MMBD914L
BAS16L
BAL99L
MBAV70L
MBAV99L
MBAV74
BD2835XL
MBD2836XL
MMBD2837XL
MMBF112L
MFE521
MMBF112
2N3797 equivalent
MFE131 equivalent
MPS5210
BC557 SOT23
8C448
BC459C
mfe211
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BUT35
Abstract: THT bsc 25 transistors but35 ASX 12 D transistor CM4050
Text: MO T O R O L A SC XST RS /R 12E D I b3b75S4 DDaMflbfl T | F MOTOROLA SEM ICON DUCTOR TECHNICAL DATA 40 AMPERES NPN SILICON POW ER DARLINGTON TRAN SISTO RS SW ITCHM ODE SER IES NPN SILICON POW ER DARLINGTON TRAN SISTO RS WITH BASE-EM ITTER SPEEDU P DIODE 1000 VOLTS
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b3b75S4
BUT35
BUT35
THT bsc 25
transistors but35
ASX 12 D transistor
CM4050
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MTM12N10
Abstract: 221A-06 25CC MTP12N10E
Text: MOTOROLA SC XSTRS/R F bflE D • b3b72S4 00TÔ57Û 72b »nOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA M TM 12N 10 "M TP 12N 10E Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silico n Gate •Motorola Preferred Device
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b3b72S4
MTM12N10
MTP12N10E
MTM12N10,
MTM12N10
221A-06
25CC
MTP12N10E
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DIODE 40c 0649
Abstract: MJ100B3D45
Text: M O T O R O L A SC SbE D XSTRS/R F O rder th is data sheet by MJ100B3D45/D b 3 b 7 E S 4 QD^lEflt. D MOTOROLA SEMICONDUCTOR TECHNICAL DATA m € NPN Silicon Power Transistor Module Energy M anagem ent Series DUAL DARLINGTON POWER TRANSISTOR 100 AMPERES 450 VOLTS
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MJ100B3D45/D
14A-02
14A-02
MJ100B3D45
CM694
DIODE 40c 0649
MJ100B3D45
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369A-10
Abstract: AN569 MTD1N40 MTD1N40-1 TO-252 N-channel power MOSFET
Text: MOTOROLA SC XSTRS/R F bf l E » • b3L72S4 00=10403 102 MOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate DPAK for Surface M ount or Insertion M ount TM O S POWER FET
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MTD1N40
369A-10
AN569
MTD1N40
MTD1N40-1
TO-252 N-channel power MOSFET
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2N5943 equivalent
Abstract: 2N5943 JOHANSON 2951 Stackpole ferrite
Text: MOTOROLA SC X S T R S / R F 4bE D • b3b?2S4 0014103 7 MOTOROLA ■ ■SEMICONDUCTOR TECHNICAL DATA I flOTb P 3 I- 2 3 2N5943 The RF Line 1.2 Gite - 6 0 mAdc NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON . . . designed specifically for broadband applications requiring low
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2N5943
b3b7S54
2N5943 equivalent
2N5943
JOHANSON 2951
Stackpole ferrite
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MTM15N40
Abstract: IRF350 MTM15N40E Motorola Case 1-06
Text: MOTOROLA SC XSTRS/R F 4bE D b3b?aSM 00^32=11 3 I MOT b T - ^ 9 ~ / 3 Order this data sheet by MTM15N40E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M T M 15N40 E D esigner's Data Sheet TMOS E-FET High Energy Power FET TMOS POWER FET 15 AMPERES rDS(on) = 0 3 OHMS
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MTM15N40E/D
MTM15N40E
MTM15N40
IRF350
MTM15N40E
Motorola Case 1-06
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MRF586
Abstract: MRF506 Motorola AR 164 MRF587 MRF587 equivalent
Text: MOTOROL A SC XSTRS/R F *4hE D b3b?254 DDTMTTM 1 •ROTfe » E 3 5 -O S MOTOROLA ■ SEMICONDUCTOR I MRF586 MRF587 TECHNICAL DATA D esign er's D ata Sheet The RF Line NPN SIU C O N HIGH FREQUENCY TRANSISTORS . . . designed for use in high-gain. low-noise ultra-linear, tuned and
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MRF586
MRF587
5-10pF
15kHz
MRF506
Motorola AR 164
MRF587
MRF587 equivalent
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MM2896
Abstract: To206AF bo140
Text: MOTOROLA SC XSTRS/R F MOTOROLA 4bE D • b3b75S4 00^24^4 ^ 1 ■nOTb SEM ICONDUCTOR TECHNICAL DATA Discrete M ilitary Products MM2896 DM0 Suffixes: HX, HXV lllllll NPN Silicon Small-Signal Transistor Processed per MIL-S-19500/xxx . . . desig ned fo r g en era l-p u rp o s e sw itch in g and a m p lifie r ap plications
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b3b75S4
MM2896
MIL-S-19500/xxx
O-116)
MM2896
To206AF
bo140
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MTM7N50
Abstract: AN569
Text: M O T O R O L A SC X S T R S / R F bflE D • b 3 b 7 2 5 4 DOTflSbB BTS MOTfc. MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate T M O S POWER FET 7 AM PERES RDS(on) = °-8 OHM
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MTM7N50
MTM7N50
AN569
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Nippon capacitors
Abstract: No abstract text available
Text: M O T O R O L A SC XSTRS/R F EbE D • b3b?2S4 00^12^0 2 Order this data sheet by MJD243/D MOTOROLA SEMICONDUCTOR ■ H s a n r a n ' T 3 3-0 7 TECHNICAL DATA m " NPN M JD243 PNP M JD253 P lastic Pow er Tran sistor C om plem entary Pair DPAK For S urface M ount and
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MJD243/D
MJD243
Nippon capacitors
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BC309 equivalent
Abstract: st 393 8-pin T0-226AE
Text: MOTOROLA SC XSTRS/R F MbE D • b3b?2S4 Oa'Obll b ■MOTb SMALL-SIGNAL BIPOLAR TRANSISTORS — PLASTIC-ENCAPSULATED TRANSISTORS (continued) 7 ^ jZ 7 - Cs5 Table 1. Plastic-Encapsulated General-Purpose Transistors (continued) Case 29-03 — T0-226AE (1-WATT T0-92)
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T0-226AE
T0-92)
BDC01D
BC309 equivalent
st 393 8-pin
T0-226AE
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but16
Abstract: No abstract text available
Text: MOTOROLA SC ÎXSTRS/R F> 6367254 MOTOROLA SC Tt XSTRS/R DF|b3b72SM 96D F> 80785 □□fl07flS D l~-3 3 -«3e? MOTOROLA BUT16 SEM ICO N D U CTO R TECHNICAL DATA 12 AMPERES SW ITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS NPN SILICON POWER DARLINGTON TRANSISTORS
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b3b72SM
fl07flS
BUT16
but16
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2N6986
Abstract: G124 C11-C15 C11C15
Text: MOTOROLA SC CXSTRS/R F bTE T> b3b72S4 D1QG124 35T MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n Push-Pull RF P o w er T ran sisto r . . . designed primarily for wideband large-signal output and driver amplifier stages In the 30 to 500 MHz frequency range.
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2N6986
2N6986
G124
C11-C15
C11C15
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mq3725
Abstract: No abstract text available
Text: MOTORCLA SC XSTRS/R F ASE O | t3b75SM QOâtSMS t, | MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage V cEO 40 Vdc Collector-Base Voltage VCBO 65 Vdc Emitter-Base Voltage vebo 6.0 Vdc ic 1.0 Ade Rating Collector Current— Continuous Total Device Dissipation
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t3b75SM
MD3725,
MQ3725
MD3725
MD3725F
10A-04,
MQ3725
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