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    TRANSISTOR 0605 Search Results

    TRANSISTOR 0605 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 0605 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Y TED Hygienischer Druckschalter Eigenschaften „„ -1 … 0 bar bis 0 … 25 bar „„ Robustes Edelstahlgehäuse für raue Umgebungsbedingungen „„ Eigensichere Ausführung (LCIE 03 ATEX 6300 X) „„Zwei Ausgänge mit Schaltfunktion (PNP-Transistor oder galvanisch


    Original     		PDF

    0A4B

    Abstract: keypad 4x4 7 segment display 4x4 matrix keypad membrane 4x4 matrix keypad and microcontroller 4X4 HEX KEY PAD keypad membrane 4X4 LTC3710G hex keypad 4x4 hex keypad 7 segment display 4x4 keyboard
    Text: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of


    Original     		PDF AN529 PIC16C5X PIC16C5X DS00529E-page 0A4B keypad 4x4 7 segment display 4x4 matrix keypad membrane 4x4 matrix keypad and microcontroller 4X4 HEX KEY PAD keypad membrane 4X4 LTC3710G hex keypad 4x4 hex keypad 7 segment display 4x4 keyboard

    IXBH12N300

    Abstract: IXBT12N300
    Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT12N300 IXBH12N300 VCES = 3000V IC110 = 12A VCE sat ≤ 3.2V TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBT12N300 IXBH12N300 IC110 O-268 IC110 O-247 12N300 IXBH12N300

    C-48U

    Abstract: 2N2666 JANTXV 2N5664 equivalent 2N5667S 2N5665
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 April 1998 INCH-POUND MIL-PRF-19500/455C 25 January 1998 SUPERSEDING MIL-S-19500/455B 19 January 1988 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING


    Original     		PDF MIL-PRF-19500/455C MIL-S-19500/455B 2N5664, 2N5665, 2N5666, 2N5666S, 2N5667, 2N5667S C-48U 2N2666 JANTXV 2N5664 equivalent 2N5665

    4X4 HEX KEY PAD

    Abstract: keypad membrane 4X4 4x4 hex keypad with microcontroller 4x4 hex keypad hex keypad 4-DIGIT 7-SEGMENT LED DISPLAY AN529 LTC3710G 061c 065B
    Text: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of


    Original     		PDF AN529 PIC16C5X PIC16C5X 4X4 HEX KEY PAD keypad membrane 4X4 4x4 hex keypad with microcontroller 4x4 hex keypad hex keypad 4-DIGIT 7-SEGMENT LED DISPLAY AN529 LTC3710G 061c 065B

    DD 127 D TRANSISTOR

    Abstract: MARKING CODE 556f 2N6782 2N6782U 2N6784 2N6786
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 March 1998. INCH-POUND MIL-PRF-19500/556F 24 December 1997 SUPERSEDING MIL-S-19500/556E 9 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON


    Original     		PDF MIL-PRF-19500/556F MIL-S-19500/556E 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U DD 127 D TRANSISTOR MARKING CODE 556f 2N6782 2N6782U 2N6784 2N6786

    2N6796

    Abstract: 2N6796U 2N6798 2N6798U 2N6800 2N6800U 2N6802 2N6802U c 2811 transistor irff130 marking
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 09 March 1998 INCH-POUND MIL-PRF-19500/557F 09 December 1997 SUPERSEDING MIL-S-19500/557E 9 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON


    Original     		PDF MIL-PRF-19500/557F MIL-S-19500/557E 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, 2N6802U 2N6796 2N6796U 2N6798 2N6798U 2N6800 2N6800U 2N6802 2N6802U c 2811 transistor irff130 marking

    4x4 matrix keypad in pic with c code

    Abstract: 108 046f keypad 4x4 c code for dspic 4X4 HEX KEY PAD keypad membrane 4X4 big 4-digit seven segment led display pic 4x4 matrix keypad dspic LTC3710G 4x4 hex keypad keypad 4x4 c code for pic
    Text: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of


    Original     		PDF AN529 PIC16C5X PIC16C5X D-81739 4x4 matrix keypad in pic with c code 108 046f keypad 4x4 c code for dspic 4X4 HEX KEY PAD keypad membrane 4X4 big 4-digit seven segment led display pic 4x4 matrix keypad dspic LTC3710G 4x4 hex keypad keypad 4x4 c code for pic

    2N4405

    Abstract: 3TF50 QPL-19500
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 3 February 2000. INCH-POUND MIL-PRF-19500/448B 3 February 1999 SUPERSEDING MIL-S-19500/448A USAF 29 March 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER


    Original     		PDF MIL-PRF-19500/448B MIL-S-19500/448A 2N4405 MIL-PRF-19500. 2N4405 3TF50 QPL-19500

    RG 2006

    Abstract: 2N6788 2N6792 2N6790 2N6794
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 08 March 1998. INCH POUND MIL-PRF-19500/555G 08 December 1997 SUPERSEDING MIL-S-19500/555F 31 March 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON


    Original     		PDF MIL-PRF-19500/555G MIL-S-19500/555F 2N6788, 2N6788U, 2N6790, 2N6790U, 2N6792, 2N6792U, 2N6794 2N6794U RG 2006 2N6788 2N6792 2N6790

    LTC1642AIGN

    Abstract: 01642a 1N4705 2N2222 FDS6630A LTC1642A LTC1642ACGN 13.85V OFFSET
    Text: LTC1642A Hot Swap Controller U FEATURES DESCRIPTIO • The LTC 1642A is a 16-pin Hot SwapTM controller that allows a board to be safely inserted and removed from a live backplane. Using an external N-Channel pass transistor, the board supply voltage can be ramped up at an


    Original     		PDF LTC1642A 16-pin LTC1421 LTC4211 LT4250 LTC1643 1642af LTC1642AIGN 01642a 1N4705 2N2222 FDS6630A LTC1642A LTC1642ACGN 13.85V OFFSET

    2SB1588

    Abstract: No abstract text available
    Text: i, L/nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SB1588 Silicon PNP Darlington Power Transistor ("^011)93 •VWH yr DESCRIPTION • High DC Current Gain: hFE= 5000(Min)@lc= -7A • Low-Collector Saturation VoltagePIN 1.BASE


    Original     		PDF 2SB1588 2SD2439 -160V 2SB1588

    Untitled

    Abstract: No abstract text available
    Text: LTC1642A Hot Swap Controller U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1642A is a 16-pin Hot SwapTM controller that allows a board to be safely inserted and removed from a live backplane. Using an external N-Channel pass transistor, the board supply voltage can be ramped up at an


    Original     		PDF LTC1642A 16-pin LTC1421 LTC4211 LT4250 LTC1643 1642af

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    army sc-c-179495

    Abstract: 2N426 2N428 germanium transistor ac 127 STT 433
    Text: MIL-S-19500/44D •lEJter sh 1970 SUPERSEDING MIL-S-19500/44C 9 April 1962 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N428 This specification is mandatory fo r use by all De­ partments and Agencies o f the Department o f Defense.


    OCR Scan     		PDF MIL-S-19500/44D MIL-S-19500/44C 2N428 000-hour MIL-S-19500, MIL-S-19500 army sc-c-179495 2N426 2N428 germanium transistor ac 127 STT 433

    NE8563S

    Abstract: 2SC 2625 transistor 321 CJ 7121 SL 0380 R E8560 ic SL 1626 NE85634-F ic 7442 2sc 1027 transistor transistor 2SC 1222
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: iT = 7 G H z • LOW NOISE FIGURE: 1.1 dB at 1 G H z • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 C H IP • LOW COST


    OCR Scan     		PDF NE856 NE8563S 2SC 2625 transistor 321 CJ 7121 SL 0380 R E8560 ic SL 1626 NE85634-F ic 7442 2sc 1027 transistor transistor 2SC 1222

    K 2056 transistor

    Abstract: pnp germanium transistor BUL 3810 2N331 Germanium Transistor 2N3317
    Text: MIL -£ -19500/4D 1 Ü November 1966 SUPERSEDING MIL-S-19500/4C 17 January 1962 See 6.2 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N331 This specification is mandatory for use by all D epart­ ments and Agencies of the Department of Defense.


    OCR Scan     		PDF -19500/4D MIL-S-19500/4C 2N331 2N331. K 2056 transistor pnp germanium transistor BUL 3810 2N331 Germanium Transistor 2N3317

    2N498

    Abstract: 2N497 2N497S 2N498S 2N65 2N656S 2N657S transistor 2N656
    Text: MIL-S-19500/74E AMENDMENT 4 11 AUGUST 1986 SUPERSEDING AMENDMENT 3 26 June 1978 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON* M F n r i i M - P n U F n ^ tV p 'eV VN4 97 , ' Y nV9~8 ,* 2N 6 56Y N 6577 ' ZN497S, 2N498S, 2N656S, 2N657S


    OCR Scan     		PDF MIL-S-19500/74E 2N498, 2V657 2N497S, 2N498S, 2N656S, 2N657S MIL-S-19500/74E, 2N497" 2N497S" 2N498 2N497 2N497S 2N498S 2N65 2N656S 2N657S transistor 2N656

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD 9.809 International IG R Rectifier IRFI2 6 0 HEXFET TRANSISTOR N-CHANNEL Product Summary 200Volt, 0.060Q, HEXFET H E X F E T technology Is the key to International Rectifier’s advanced line of power M OSFET transis­ tors. The efficient geometry design achieves very


    OCR Scan     		PDF 200Volt, IRFI260 GGSS41Ã

    OC 74 germanium transistor

    Abstract: 2N1500 pnp germanium transistor NEW JERSEY SEMICONDUCTOR uz
    Text: oKr» 1 TT _c_i QKnn/1 W/ 16t/U 1 .Tuna 1967 SUPERSEDING MIL -S-19500/125B 3 Mav 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, SWITCHING TYPE 2N1500 This specification is m andatory for use by all D epart­ m ents and Agencies of the Department of Defense.


    OCR Scan     		PDF MIL-S-19500/125C -S-19500/125B 2N1500 OC 74 germanium transistor 2N1500 pnp germanium transistor NEW JERSEY SEMICONDUCTOR uz

    1SS SOT-23

    Abstract: NDS0605 SFs SOT23
    Text: April 1995 N D S0605 P-Channel Enhancement M ode Field Effect Transistor General Description Features T hese P-C hannel e n h a n c e m e n t m o d e po w er field effect transistors are p roduced using N ational's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDS0605 NDS0605 OT-23 1SS SOT-23 SFs SOT23

    2N651A

    Abstract: 2N650A WE VQE 23 F 175C 2N652A 2n85
    Text: M IL -S -19300/175C 10 October 1958 SUPERSEDING M IL -S -19500/175B 2 July 1384 See 6.3 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN P, GERMANIUM, L O w -PO w EK TYPES 2N650A, 2N651A, AND 2N652A Thi» specification is m andatory fo r u se b y a ll D ep art­


    OCR Scan     		PDF MIL-S-19500/ MIL-S-19500/175B 2N650A, 2N651A, 2N652A 2N651A 2N650A WE VQE 23 F 175C 2N652A 2n85

    2N1305

    Abstract: J1 TRANSISTOR 2N1304 Application of 2n1304 2N1307 2N1303 2N1309 2N1308 2n1308 jan transistor 2N1309
    Text: M IL -S -1 9500/126C 24 March 1971 SUPERSEDING M IL -S-195 0 0 /1 26B 20 March 1904 * MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, GERMANIUM, HIGH-FREQUENCY NPN TYPES 2N1302, 2N1304, 2N1306, 2N1308 AND PNP TYPES 2N1303, 2N1305, 2N1307, 2N1309 This sp ecification is mandatory for u se by a ll D epart­


    OCR Scan     		PDF MIL-S-19500/126C MIL-S-19500/126B 2N1302, 2N1304, 2N1306, 2N1308 2N1303, 2N1305, 2N1307, 2N1309 2N1305 J1 TRANSISTOR 2N1304 Application of 2n1304 2N1307 2N1303 2N1309 2n1308 jan transistor 2N1309