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    TRANSISTOR* IGBT 200A 300 V Search Results

    TRANSISTOR* IGBT 200A 300 V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR* IGBT 200A 300 V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IGBT module FZ

    Abstract: IGBT FZ 200 22nf IGBT FZ 1200 kf1 IGBT module FZ 1200 IGBT module FZ 400 IGBT FZ 1000
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 200 R 65 KF1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom


    Original     		PDF

    induction heat circuit

    Abstract: igbt dc to dc chopper control circuit diagram igbt for HIGH POWER induction heating bi-directional switches IGBT ups circuit diagram using igbt dual DIODE 200A 600V dynex igbt 1200v ic ARM igbt dc to dc chopper control igbt for induction heating
    Text: DIM200WLS12-A000 DIM200WLS12-A000 IGBT Chopper Module - Lower Arm Control Replaces December 2003 version, issue FDS5697-1.1 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate FDS5697-2.0 February 2004 KEY PARAMETERS


    Original     		DIM200WLS12-A000 FDS5697-1 FDS5697-2 induction heat circuit igbt dc to dc chopper control circuit diagram igbt for HIGH POWER induction heating bi-directional switches IGBT ups circuit diagram using igbt dual DIODE 200A 600V dynex igbt 1200v ic ARM igbt dc to dc chopper control igbt for induction heating PDF

    ac chopper circuit

    Abstract: bi-directional switches IGBT igbt for HIGH POWER induction heating induction heat circuit induction heating control circuit diagram Material Handling Systems DIM200WKS12-A000 fds5969
    Text: DIM200WKS12-A000 DIM200WKS12-A000 IGBT Chopper Module - Upper Arm Control Replaces December 2003 version, issue FDS5969-1.1 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate PDS5969-2.0 February 2004 KEY PARAMETERS


    Original     		DIM200WKS12-A000 FDS5969-1 PDS5969-2 ac chopper circuit bi-directional switches IGBT igbt for HIGH POWER induction heating induction heat circuit induction heating control circuit diagram Material Handling Systems DIM200WKS12-A000 fds5969 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM200WLS12-A000 DIM200WLS12-A000 IGBT Chopper Module - Lower Arm Control Replaces DIM200MLS12-A000 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate FDS5697-1.1 December 2003 KEY PARAMETERS VCES typ VCE(sat)*


    Original     		DIM200WLS12-A000 DIM200MLS12-A000 FDS5697-1 DIM200WLS12-A00y PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM200WKS12-A000 DIM200WKS12-A000 IGBT Chopper Module - Upper Arm Control Replaces DIM200MKS12-A000 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate FDS5969-1.1 December 2003 KEY PARAMETERS VCES typ VCE(sat)*


    Original     		DIM200WKS12-A000 DIM200MKS12-A000 FDS5969-1 DIM200WKS12-A000 PDF

    DIM200PLM33-A000

    Abstract: No abstract text available
    Text: DIM200PLM33-A000 DIM200PLM33-A000 IGBT Chopper Module Preliminary Information Replaces issue April 2003, version DS5597-1.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


    Original     		DIM200PLM33-A000 DS5597-1 DS5597-2 DIM200PLM33-A000 PDF

    eupec igbt

    Abstract: IGBT module FZ 600kW
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 200 R 65 KF1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom


    Original     		PDF

    DIM200WLS12-A000

    Abstract: bi-directional IGBT
    Text: DIM200WLS12-A000 DIM200WLS12-A000 IGBT Chopper Module - Lower Arm Control Replaces February 2004 version, issue FDS5697-2.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate FDS5697-3.0 June 2004 KEY PARAMETERS


    Original     		DIM200WLS12-A000 FDS5697-2 FDS5697-3 DIM200WLS12-A000 bi-directional IGBT PDF

    eupec igbt

    Abstract: No abstract text available
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FD 200 R 65 KF1-K Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom


    Original     		PDF

    DIM200WKS12-A000

    Abstract: No abstract text available
    Text: DIM200WKS12-A000 DIM200WKS12-A000 IGBT Chopper Module - Upper Arm Control Replaces February 2004 version, issue PDS5969-2.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5969-3.0 June 2004 KEY PARAMETERS


    Original     		DIM200WKS12-A000 PDS5969-2 DS5969-3 DIM200WKS12-A000 PDF

    Untitled

    Abstract: No abstract text available
    Text: Date:- 6 August, 2012 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T0340VB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800


    Original     		T0340VB45G T0340VB45G PDF

    DIM200WKS17-A000

    Abstract: No abstract text available
    Text: DIM200WKS17-A000 DIM200WKS17-A000 IGBT Chopper Module - Upper Arm Control FDS5699-1.1 December 2003 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK)


    Original     		DIM200WKS17-A000 FDS5699-1 DIM200WKS17-A000 PDF

    T0340VB

    Abstract: T0340VB45G westcode igbt
    Text: Date:- 6 August, 2012 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T0340VB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800


    Original     		T0340VB45G VRM10V, T0340VB45G T0340VB westcode igbt PDF

    T0360NA25A

    Abstract: D-68623 T0360 TX031NA25A
    Text: WESTCODE Date:- 28 Aug, 2002 Data Sheet Issue:- 2 An IXYS Company Provisional data Insulated Bi-Polar Gate Transistor Type T0360NA25A Development Type Number: TX031NA25A Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE RATINGS UNITS VCES Collector – emitter voltage


    Original     		T0360NA25A TX031NA25A) T0360NA25A D-68623 T0360 TX031NA25A PDF

    IC 7424

    Abstract: DIM200BSS12-A000 diode 1000V
    Text: DIM200BSS12-A000 DIM200BSS12-A000 Single Switch IGBT Module Replaces February 2004 version, issue DS5693-2.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5693-3.0 May 2004 KEY PARAMETERS VCES typ


    Original     		DIM200BSS12-A000 DS5693-2 DS5693-3 DIM200BSS12-A000 IC 7424 diode 1000V PDF

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP201MHS18
    Text: GP201MHS18 GP201MHS18 Low VCE SAT Half Bridge IGBT Module DS5290-2.1 January 2001 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 200A Per Arm APPLICATIONS ■ High Reliability Inverters


    Original     		GP201MHS18 DS5290-2 AN4502 AN4503 AN4505 AN4506 GP201MHS18 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM200WHS12-E000 DIM200WHS12-E000 Half Bridge IGBT Module PDS5684-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		DIM200WHS12-E000 PDS5684-1 DIM200WHS12-E000 PDF

    DIM200WHS12-E000

    Abstract: No abstract text available
    Text: DIM200WHS12-E000 DIM200WHS12-E000 Half Bridge IGBT Module PDS5684-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		DIM200WHS12-E000 PDS5684-1 DIM200WHS12-E000 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM200BSS12-E000 DIM200BSS12-E000 Single Switch IGBT Module PDS5704-1.1 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		DIM200BSS12-E000 PDS5704-1 DIM200BSS12-E000 PDF

    DIM200WLS12-A000

    Abstract: No abstract text available
    Text: DIM200WLS12-A000 IGBT Chopper Module – Lower Arm Control DS5697-3.1 July 2007 LN25356 FEATURES Non Punch Through Silicon Isolated Copper Baseplate 10 s Short Circuit Withstand Lead Free construction KEY PARAMETERS VCES VCE (sat) * (typ) IC (max) IC(PK)


    Original     		DIM200WLS12-A000 DS5697-3 LN25356) DIM200WLS12-A000 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM200BSS12-E000 DIM200BSS12-E000 Single Switch IGBT Module PDS5704-1.1 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		DIM200BSS12-E000 PDS5704-1 DIM200BSS12-E000 PDF

    dc to dc chopper using igbt

    Abstract: DIM200WKS12-A000 INFORMATION OF IC 7424
    Text: DIM200WKS12-A000 IGBT Chopper Module – Upper Arm Control DS5969-3.2 January 2009 LN26554 FEATURES Non Punch Through Silicon Isolated Copper Baseplate 10 s Short Circuit Withstand Lead Free construction KEY PARAMETERS VCES VCE (sat) * (typ) IC (max) IC(PK)


    Original     		DIM200WKS12-A000 DS5969-3 LN26554) DIM200WKS12-A000 dc to dc chopper using igbt INFORMATION OF IC 7424 PDF

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP200MHS18 half bridge 12v dc to 220 ac INVERTER DS5304 DS5304-3
    Text: GP200MHS18 GP200MHS18 Half Bridge IGBT Module DS5304-3.1 January 2001 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 200A Per Arm KEY PARAMETERS VCES typ VCE(sat) (max) IC (max) IC(PK) 1800V


    Original     		GP200MHS18 DS5304-3 GP200MHS18 AN4502 AN4503 AN4505 AN4506 half bridge 12v dc to 220 ac INVERTER DS5304 PDF

    T0360NB25A

    Abstract: igbt1 T0360NB T0360
    Text: WESTCODE An Date:- 23 Aug, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0360NB25A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		T0360NB25A T0360NB25A igbt1 T0360NB T0360 PDF