Untitled
Abstract: No abstract text available
Text: PRELIMINARY 5STF 23H2040 5STF 23H2040 Fast Thyristor Properties • Amplifying gate • High operational capability Optimized turn-off parameters Applications Power switching applications Key Parameters V DRM, V RRM = 2 000 I TAV = 2 378
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23H2040
1768/138a,
TR/308/12
May-12
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 5STF 23H2040 5STF 23H2040 Fast Thyristor Properties • Amplifying gate • High operational capability Optimized turn-off parameters Applications Power switching applications Key Parameters V DRM, V RRM = 2 000 I TAV = 2 322
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23H2040
1768/138a,
TR/308/12c
Mar-14
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA307~KRA308 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M ・With Built-in Bias Resistors ・Simplify Circuit Design D G ・Reduce a Quantity of Parts and Manufacturing Process
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KRA307
KRA308
KRA308
KRA309
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ATTP1
Abstract: No abstract text available
Text: E Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION Prepared also subject responsible if other EZIWSON Approved PKU 4000 Direct Converters SEC/D (Julia series You) 1 (1) (4) No. Checked Input 36-75 V, Output up to 25 A / 50 W 1/1301-BMR 001 52-EN/LZT
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1/1301-BMR
52-EN/LZT
ATTP1
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Untitled
Abstract: No abstract text available
Text: Limited EricssonInternal Internal TABLE PRODUCT OF CONTENTS SPECIFICATION E Prepared also subject responsible if other SEC/S Kevin Zhou Approved PKU 4000 & SI series SEC/S Kevin PI Zhou 1 (1) (3) No. 001 1/1301-BMR 52-EN/LZT 602146 Uen 308 Uen Specification
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1/1301-BMR
52-EN/LZT
MIL-STD-202G
J-STD-020C
22-A114
22-A115
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TB 1225 EN
Abstract: No abstract text available
Text: Limited Internal Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION E Prepared also subject responsible if other SEC/S Kevin Zhou Approved PKU 4000 & SI series SEC/S Kevin PI Zhou 1 (1) (3) No. 1/1301-BMR 001 52-EN/LZT 602146 Uen 308 Uen Specification
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1/1301-BMR
52-EN/LZT
TB 1225 EN
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PKU 4513
Abstract: 4511 MOSFET ci 4511 ICT PRC 22.10 PKU 4510 ICT PRC Thermal Shut Down Functioned MOSFET rc 4513 Alice su 550
Text: EricssonInternal Internal Limited PRODUCT SPECIFICATION TABLE OF CONTENTS E Prepared also (also subject subject responsible responsible ifif other other) Prepared EZHIXZH SEC/S Kevin Zhou Approved Approved PKU 4000 Series SEC/D (ALICE SU) 1 (1) (3) 1 No.
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1/1301-BMR
602Technical
52-EN/LZT
PKU 4513
4511 MOSFET
ci 4511
ICT PRC 22.10
PKU 4510
ICT PRC
Thermal Shut Down Functioned MOSFET
rc 4513
Alice
su 550
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MMVL2101T1
Abstract: 65t marking
Text: MMVL2101T1 Preferred Device Silicon Tuning Diode These devices are designed in the popular Plastic Surface Mount Package for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid–state reliability in replacement of mechanical tuning
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MMVL2101T1
r14153
MMVL2101T1/D
MMVL2101T1
65t marking
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4511 mosfet
Abstract: No abstract text available
Text: EricssonInternal Limited Internal TABLE OF CONTENTS PRODUCT SPECIFICATION E Prepared also subject responsible if other SEC/S Kevin Zhou Approved PKU 4000 & -SI series SEC/S Kevin PI Zhou 1 (1) (3) No. 1/1301-BMR 001 52-EN/LZT 602146 Uen 308 Uen Specification
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1/1301-BMR
52-EN/LZT
MIL-STD-202G
J-STD-020C
22-A114
22-A115
4511 mosfet
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Untitled
Abstract: No abstract text available
Text: APT50M60L2VFR 500V 0.060Ω 77A POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M60L2VFR
O-264
O-264
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Untitled
Abstract: No abstract text available
Text: APT50M60L2VR 0.060Ω 500V 77A POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M60L2VR
O-264
O-264
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APT50M60L2VR
Abstract: 77A DIODE
Text: APT50M60L2VR 500V 77A 0.060Ω POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M60L2VR
O-264
O-264
APT50M60L2VR
77A DIODE
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APT60DF60
Abstract: 77A DIODE APT50M60L2VFR diode 77a
Text: APT50M60L2VFR 500V 77A 0.060Ω POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M60L2VFR
O-264
O-264
APT60DF60
77A DIODE
APT50M60L2VFR
diode 77a
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JLC1563
Abstract: JLC1563M JLC1563ML1 JLC1563P 1JLC1563ML1 SCL MARKING
Text: JLC1563 I2C Bus Transceiver JLC1563 is an I2C–bus signal transceiver and “conditioner’’. Currently, systems complexity and I2C–bus device types and functionality are only increasing. As a result of I2C–bus loading the Clock line and Data line signals degrade. The JLC1563 I2C–Bus
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JLC1563
JLC1563
r14525
JLC1563/D
JLC1563M
JLC1563ML1
JLC1563P
1JLC1563ML1
SCL MARKING
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analog PIN Photodiode 3GHz
Abstract: Receptacle InGaAs Photodiode 1550nm PDINJ075FCCB-O-V-MM
Text: PD Inc LD PDINJ Series Analog InGaAsP PIN Photodiodes Analog InGaAs PIN Detectors PD-LD Inc. offers low noise, high responsivity analog InGaAsP photo detectors in convenient fiber coupled packages. These assemblies incorporate 75 micron diameter active area detector
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221D
Abstract: BUT11AF
Text: ON Semiconductort FULL PAKt High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art bipolar fabrication techniques to
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BUT11AF
BUT11AF
r14525
BUT11AF/D
221D
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APT55M50JFLL
Abstract: No abstract text available
Text: APT55M50JFLL 550V POWER MOS 7 R FREDFET VDSS ID S 27 2 T- D G SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol 0.050Ω S Power MOS 7 is a new generation of low loss, high voltage, N-Channel
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APT55M50JFLL
OT-227
APT55M50JFLL
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ML9478
Abstract: ML9478DVWA 12 pin 7 segment display layout -LD-5461BS 12 pin 7 segment display pin diagram SEG40 SEG80
Text: FEDL9478-01 Issue Date: Aug. 12, 2010 ML9478 Static, 1/2 Duty, 1/3 Duty, 1/4 Duty 80 Outputs LCD Driver GENERAL DESCRIPTION The ML9478 is a LCD driver LSI, consists of an 80-bit shift register, a 320-bit data latch, 80 sets of LCD drivers, and a common signal generation circuit.
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FEDL9478-01
ML9478
ML9478
80-bit
320-bit
ML9478DVWA
12 pin 7 segment display layout -LD-5461BS
12 pin 7 segment display pin diagram
SEG40
SEG80
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PDF
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ML9478
Abstract: segment driver 130hz
Text: FEDL9488-01 Issue Date: Jan. 15, 2013 ML9488 Static, 1/2 Duty, 1/3 Duty, 1/4 Duty 80 Outputs LCD Driver GENERAL DESCRIPTION The ML9488 is an LCD driver LSI, consists of a 80-bit shift register, a 320-bit data latch, 80 sets of LCD drivers, and a common signal generation circuit.
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FEDL9488-01
ML9488
ML9488
80-bit
320-bit
ML9478
segment driver 130hz
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Untitled
Abstract: No abstract text available
Text: CRYSTAL UNIT TUNING FORK CH-308 - Photolithography finished allows uniform stable performance - Excellent shock resistance and environmental capability - Low power consumption - Suitable for time-keeping of clock and micro computer tR o H S • ELECTRICAL SPECIFICATIONS
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CH-308
500MQ
CH-206
CS-146
CS-306
CS-519
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Untitled
Abstract: No abstract text available
Text: INCH MM .0015 .005 013 030 045 049 060 100 125 170 0.04 0.13 0.33 0 .76 1 1 .24 .52 2.54 3. IB 4 .32 5.08 7.49 7.82 10.16 10.92 12.70 IB. 34 200 295 308 .400 .430 500 .722 RED INDICATES ORIGINAL DATA CONT AI NE O IN THIS DOCUMENT IS PROPRIETARY TÛ TR OMPETER ELECTRONICS INC.
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QQ-S-571,
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LM308 pin configuration
Abstract: pin diagram of LM308 Op Amp IC lm308 equivalent LM30B LM108 EQUIVALENT LM308N LM308 LM101 LM108A LM108AH
Text: S C S -TH O M SO N LM108/A - LM208/A LM308/A PRECISION SINGLE OPERATIONAL AMPLIFIERS Outstanding characteristics of LM108A : • INPUT OFFSET VOLTAGE : 0.5mV MAXIMUM ■ INPUT BIAS CURRENT : 3nA MAXIMUM OVER FULL TEMPERATURE RANGE ■ INPUT OFFSET CURRENT : 0.4nA MAXI
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LM108/A
LM208/A
LM308/A
LM108A
600jiA
LM308
LM308
2N4391
100kn
1N4148
LM308 pin configuration
pin diagram of LM308 Op Amp IC
lm308 equivalent
LM30B
LM108 EQUIVALENT
LM308N
LM101
LM108A
LM108AH
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E88LM
Abstract: LM308 pin configuration lm308 equivalent lm308 LM108A
Text: r z 7 Ä 7# S G S -T H O M S O N L M 1 0 8 , A - L M 2 0 8 ,A L M 3 0 8 ,A PREC ISIO N SINGLE O PERATIO NAL AM PLIFIERS Outstanding characteristics of LM108A : • INPUT OFFSET VOLTAGE: 0.5 mV MAXIMUM ■ INPUT BIAS CURRENT: 3 nA MAXIMUM OVER FULL TEMPERATURE RANGE
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LM108A
LM108
27max.
E88LM
LM308 pin configuration
lm308 equivalent
lm308
LM108A
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Untitled
Abstract: No abstract text available
Text: r z ^ T 7 # S C S - T H O M S O N L M 1 0 8 , A - L M 2 0 8 , A R Æ O O M IL Œ C T M M S L M 3 0 8 , A PRECISION SINGLE OPERATIONAL AMPLIFIERS Outstanding characteristics of LM108A : • INPUT OFFSET VOLTAGE: 0.5 mV MAXIMUM ■ INPUT BIAS CURRENT: 3nA MAXIMUM OVER
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LM108A
LM108
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