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    APT60DF60 Price and Stock

    Microchip Technology Inc APT60DF60HJ

    BRIDGE RECT 1P 600V 90A SOT227
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    APT60DF60 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT60DF60HJ Microsemi Bridge Rectifiers - Modules, Discrete Semiconductor Products, POWER MOD DIODE 600V 90A SOT227 Original PDF

    APT60DF60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APT60DF60HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 600V IC = 60A @ Tc = 80°C Application •    Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features + ~        


    Original     		PDF APT60DF60HJ OT-227)

    Untitled

    Abstract: No abstract text available
    Text: APT60DF60HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 600V IC = 60A @ Tc = 80°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • • • • • • • • +


    Original     		PDF APT60DF60HJ OT-227)

    Untitled

    Abstract: No abstract text available
    Text: APT60M75JFLL 600V POWER MOS 7 R 58A FREDFET 0.075Ω S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT60M75JFLL OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT60M60JFLL 600V 70A 0.060Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT60M60JFLL OT-227

    400V 70A power mosfet

    Abstract: No abstract text available
    Text: APT60M60JLL 800V 70A 0.060Ω POWER MOS 7 R S S MOSFET 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT60M60JLL OT-227 400V 70A power mosfet

    APT50M75B2LL

    Abstract: APT50M75LLL ic power mosfet 100V 57A
    Text: APT50M75B2LL APT50M75LLL 500V 57A 0.075Ω R POWER MOS 7 MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT50M75B2LL APT50M75LLL O-264 O-264 O-247 APT50M75B2LL APT50M75LLL ic power mosfet 100V 57A

    Untitled

    Abstract: No abstract text available
    Text: APT50M60JVFR 0.060Ω 500V 63A POWER MOS V FREDFET S S D G Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT50M60JVFR OT-227

    APT80GP60J

    Abstract: No abstract text available
    Text: APT80GP60J 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT80GP60J APT80GP60J

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter

    APT50M60JVFR

    Abstract: No abstract text available
    Text: APT50M60JVFR 500V 63A POWER MOS V FREDFET 0.060Ω S S 27 2 T- D G Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT50M60JVFR OT-227 APT50M60JVFR

    Untitled

    Abstract: No abstract text available
    Text: APT50M65JFLL 500V R POWER MOS 7 0.065Ω 58A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT50M65JFLL OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT50M50L2FLL 500V 89A 0.050Ω R POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT50M50L2FLL O-264

    Untitled

    Abstract: No abstract text available
    Text: APT50M65B2LL APT50M65LLL 500V 67A 0.065Ω R POWER MOS 7 MOSFET B2LL T-MaxTM Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT50M65B2LL APT50M65LLL O-264 O-264 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT50M60L2VFR 500V 0.060Ω 77A POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT50M60L2VFR O-264 O-264

    power mosfet 600v 29a

    Abstract: No abstract text available
    Text: APT60M75JLL 600V 58A 0.075Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT60M75JLL OT-227 power mosfet 600v 29a

    APT60M75L2LL

    Abstract: 0236f
    Text: APT60M75L2LL 600V 73A 0.075Ω POWER MOS 7 R MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT60M75L2LL O-264 O-264 APT60M75L2LL 0236f

    APT55M50JFLL

    Abstract: No abstract text available
    Text: APT55M50JFLL 550V POWER MOS 7 R FREDFET VDSS ID S 27 2 T- D G SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol 0.050Ω S Power MOS 7 is a new generation of low loss, high voltage, N-Channel


    Original     		PDF APT55M50JFLL OT-227 APT55M50JFLL

    Untitled

    Abstract: No abstract text available
    Text: APT60M80L2VR 600V 65A 0.080Ω POWER MOS V MOSFET L2VR TO-264 Max V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT60M80L2VR O-264 O-264

    Untitled

    Abstract: No abstract text available
    Text: APT60M80L2VR 600V 65A 0.080Ω POWER MOS V MOSFET L2VR TO-264 Max V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT60M80L2VR O-264 O-264

    APT80GP60B2

    Abstract: No abstract text available
    Text: APT80GP60B2 600V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT80GP60B2 APT80GP60B2

    APT60DF60

    Abstract: APT50M38JLL
    Text: APT50M38JLL 500V 88A 0.038Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT50M38JLL OT-227 APT60DF60 APT50M38JLL

    APT50M75B2LL

    Abstract: APT50M75LLL
    Text: APT50M75B2LL APT50M75LLL 500V 57A 0.075Ω POWER MOS 7 R MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT50M75B2LL APT50M75LLL O-264 O-264 O-247 APT50M75B2LL APT50M75LLL

    APT50M60L2VR

    Abstract: 77A DIODE
    Text: APT50M60L2VR 500V 77A 0.060Ω POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT50M60L2VR O-264 O-264 APT50M60L2VR 77A DIODE

    APT50M50JLL

    Abstract: diode 71A
    Text: APT50M50JLL 500V 71A 0.050Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT50M50JLL OT-227 APT50M50JLL diode 71A