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    TR/TRANSISTOR BI 340 Search Results

    TR/TRANSISTOR BI 340 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TR/TRANSISTOR BI 340 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR BI 340

    Abstract: 2sc2774
    Text: , LJnc. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 2SA1170 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- PIN 1.BASE 2.COLLECTOR V(BR)CEo= -200V(Min) • High Power Dissipation


    Original     		PDF 2SA1170 -200V 2SC2774 MT-200 -50mA; -200V; TRANSISTOR BI 340 2sc2774

    L9935

    Abstract: XX111111
    Text: L9935 TWO-PHASE STEPPER MOTOR DRIVER 2 X 1.1A FULL BRIDGE OUTPUTS INTEGRATED CHOPPING CURRENT REGULATION MINIMIZED POWER DISSIPATION DURING FLYBACK OUTPUT STAGES WITH CONTROLLED OUTPUT VOLTAGE SLOPES TO REDUCE ELECTROMAGNETIC RADIATION SHORT-CIRCUIT PROTECTION OF ALL


    Original     		PDF L9935 PowerSO20 L9935 XX111111

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    Untitled

    Abstract: No abstract text available
    Text: L9935 Two-phase stepper motor driver Features • 2 x 1.1 A full bridge outputs ■ Integrated chopping current regulation ■ Minimized power dissipation during flyback ■ Output stages with controlled output voltage slopes to reduce electromagnetic radiation


    Original     		PDF L9935 PowerSO20 L9935

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: L9935 Two-phase stepper motor driver Features • 2 x 1.1 A full bridge outputs ■ Integrated chopping current regulation ■ Minimized power dissipation during flyback ■ Output stages with controlled output voltage slopes to reduce electromagnetic radiation


    Original     		PDF L9935 PowerSO20 L9935

    AN2378

    Abstract: POWERSO20 L9935 L9935013TR
    Text: L9935 Two-phase stepper motor driver Features • 2 x 1.1 A full bridge outputs ■ Integrated chopping current regulation ■ Minimized power dissipation during flyback ■ Output stages with controlled output voltage slopes to reduce electromagnetic radiation


    Original     		PDF L9935 PowerSO20 L9935 AN2378 POWERSO20 L9935013TR

    l9935 spi

    Abstract: m21 transistor
    Text: L9935 Two-phase stepper motor driver Feature summary • 2 x 1.1A full bridge outputs ■ Integrated chopping current regulation ■ Minimized power dissipation during flyback ■ Output stages with controlled output voltage slopes to reduce electromagnetic radiation


    Original     		PDF L9935 PowerSO-20 L9935 l9935 spi m21 transistor

    m21 transistor

    Abstract: MO-166 stepper motor 12v connection transistor hh 004 DC MOTOR SPEED CONTROL USING chopper flyback led driver with pwm dimming transistor hh 004 circuits diagram L9935 L9935013TR
    Text: L9935 Two-phase stepper motor driver Feature summary • 2 x 1.1 A full bridge outputs ■ Integrated chopping current regulation ■ Minimized power dissipation during flyback ■ Output stages with controlled output voltage slopes to reduce electromagnetic radiation


    Original     		PDF L9935 PowerSO-20 L9935 m21 transistor MO-166 stepper motor 12v connection transistor hh 004 DC MOTOR SPEED CONTROL USING chopper flyback led driver with pwm dimming transistor hh 004 circuits diagram L9935013TR

    Untitled

    Abstract: No abstract text available
    Text: BFP 181W NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifier at 4 collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF VPS05605 OT-343 Oct-12-1999

    Untitled

    Abstract: No abstract text available
    Text: BFP181W NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifier at 4 collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFP181W VPS05605 OT343

    transistor bI 340

    Abstract: 2N3585
    Text: 2N3585 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3585 is Designed for General Purpose High Voltage Amplifier and Switching Applications. PACKAGE STYLE TO - 66 2.0 A 300 V o m lc < MAXIMUM RATINGS INCHES Pd is s 35 W @ Tc # 25 °C Tj -65 °C to +200 °C


    OCR Scan     		PDF 2N3585 2N3585 RAD8-89 transistor bI 340

    Untitled

    Abstract: No abstract text available
    Text: n z z SGS-THOMSON li!iilD g[Si [llLi ¥MD(gi L9935 TWO-PHASE STEPPER MOTOR DRIVER PRODUCT PREVIEW • 2 X 1 .1 A FULL BRIDGE OUTPUTS ■ INTEGRATED CHOPPING CURRENT REGU­ LATION ■ MINIMIZED POWER DISSIPATION DURING FLYBACK ■ OUTPUT STAGES WITH CONTROLLED


    OCR Scan     		PDF L9935 TYPICALLY20 POWERS020 L9935

    buv62

    Abstract: No abstract text available
    Text: 2 3 Ü 2 3 7 0 0 2 0 7 ^ 1 b • n ^ - 3 3 - I S SCS-THOMSON Ä 7# mm i l L iO T T I ^ Ù f f il lD O l r 7 z s c S G S-TH0MS0N B U V 6 2 30E » FAST SWITCHING POWER TRANSISTOR ■ FAST SWITCHING TIMES ■ LOW SWITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND


    OCR Scan     		PDF

    2N3584

    Abstract: No abstract text available
    Text: 2N3584 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3584 is Designed for General Purpose High Voltage Amplifier and Switching Applications PACKAGE STYLE TO - 66 2.0 A 250 V o m lc < MAXIMUM RATINGS INCHES Pd is s 35 W @ Tc # 25 °C Tj -65 °C to +200 °C


    OCR Scan     		PDF 2N3584 2N3584 RAD8-89

    germanium transistor ac 128

    Abstract: transistor ac 127 AC127 valvo ac128 valvo transistoren transistor ac 132 germanium transistor ac 132 transistor ac 128 ac 127
    Text: N ICH T FÜR N E U E N T W IC K L U N G E N AC 127 GERMANIUM - NPN - NF - TRANSISTOR ftir Endstufen, in Verbindung mit AC 128 oder AC 132 als komplementäres Paar Mechanisehe Daten; Gehäuse: Metall, JEDEC TO-1, 1 A 3 DIN 41 871 Alle Elektroden sind vom Gehäuse isoliert*


    OCR Scan     		PDF VX720043 germanium transistor ac 128 transistor ac 127 AC127 valvo ac128 valvo transistoren transistor ac 132 germanium transistor ac 132 transistor ac 128 ac 127

    TEA5704

    Abstract: 38MHZ
    Text: ¿ T T SGS-THOMSON TEA5704 * JM, KfflD ^ [l[L[i g^(Q [iO(gi ADVANCED 4-HEAD PLAY-BACK AND RECORD AMPLIFIER FOR VCR ADVANCE DATA PLAY-BACK MODE - LOW NOISE AND WIDE BAND AMPLIFIERS FOR 4 HEADS •AUTOMATIC OFFSET CANCELLATION BE­ TWEEN THE 2 SELECTED HEADS


    OCR Scan     		PDF TEA5704 91DSTEA5704-03 91DSTEA5704-11 TEA5704 38MHZ

    m21 transistor

    Abstract: FLAYBACK L9935
    Text: SGS-TtiOMSON :ILI iriS3©K!lDgl L9935 TWO-PHASE STEPPER MOTOR DRIVER P R O D U C T P R E V IE W • 2 X 1 .1 A FULL BRIDGE OUTPUTS ■ INTEGRATED CHOPPING CURRENT REGU­ LATION ■ MINIMIZED POWER DISSIPATION DURING FLYBACK ■ OUTPUT STAGES WITH CONTROLLED


    OCR Scan     		PDF L9935 TYPICALLY20 POWERS020 L9935 P0WERS02Q m21 transistor FLAYBACK

    AX117

    Abstract: MAX113ENG
    Text: >HylX IWI 19-1081; Rev 1;8 /96 +3V, 4 0 0 k s p s , 4/ 8- Ch annel , 8- Bi t A D C s w i t h 1 ¡jA P o w e r - D o w n _F e a t u r e s The MAX113/M AX117 are m icroprocessor-com patible, 8-bit, 4-channel and 8-channel ana lo g-to -d igita l c o n ­


    OCR Scan     		PDF MAX113/M AX117 MAX113ENG

    2N6678 motorola

    Abstract: Motorola 3-252 ca3725 Motorola Transistor 3-252 JH transistor 6676 transistor Motorola 3-252 to-3
    Text: "Tb MOTOROLA SC iXSTRS/R F> 6367254 M OT O R O L A SC CXSTRS/R F DE Jt.3t.72SM OOÛOSlt. 2 96D 60 516 D T-33-13 2IM6648 M O TO RO LA See Page S E M IC O N D U C T O R TECH N ICAL DATA 3-209 N P N Silico n Pow er T ransistors 2N6676 2N6677 2N6678 The 2N6676, 2N6677, 2N6678, MJH6676, MJH6677, and MJH6678 transistors are


    OCR Scan     		PDF T-33-13 2IM6648 2N6676 2N6677 2N6678 MJH6676 MJH6677 MJH6678 2N6676, 2N6677, 2N6678 motorola Motorola 3-252 ca3725 Motorola Transistor 3-252 JH transistor 6676 transistor Motorola 3-252 to-3

    AM503

    Abstract: p63g
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J16018* M JW 16018* D esigner’s Data Sheet N PN Silico n Pow er T ran sistors ‘Motorola Preftrrwl Dovie* 1.5 kV SWITCHMODE Series These transistors are designed for high-voltage, high-speed, power switching in


    OCR Scan     		PDF J16018* UUR11 MJ16018 MJW16018 MUR105 AM503 P63G2 P6302 p63g

    Untitled

    Abstract: No abstract text available
    Text: b u r r - brown corp HE ] I 1? 313Li5 0014057 1 | T O H I-i \ XTR110 B U R R -B R O W N a 1 XTR110 [ APPLICATIO N S • 4mA TO 20mA TRANSMITTER • SELECTABLE INPUT/OUTPUT RANGES: OV to + 5 V , OV to + 1 0 V Inputs OmA to 20mA, 5mA to 25mA Outputs Other Ranges


    OCR Scan     		PDF 313Li5 XTR110 10-Iu

    BCW61RA

    Abstract: bcx71 bcx71rh BCX71C BCW60
    Text: ITT seuicond/ intermetall SGE D 4bô2711 D002bGQ 714 BCW61, BCX71 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. i i” n is 1 ! 4H P- Especially suited for automatic insertion in thick- and thin-film circuits. The transistors BCW61 are subdivided into the groups A, B,


    OCR Scan     		PDF BCW61, BCX71 BCW61 BCX71 BCW60 BCX70 BCW61R BCX71R. BCW61RA bcx71rh BCX71C

    Untitled

    Abstract: No abstract text available
    Text: 3875081 G E SOLID STATE 01E 19698 D Optoelectronic Specifications- T-V/-S3 HARRIS SEIUCOND SECTOR 37E J> m 4302271 0D271bD fl • HAS A C Input Photon Coupled Isolator H11AA1-H11AA4 Ga As Infrared E m itting D iodes & NPN Silicon P h o to-T ransistor


    OCR Scan     		PDF 0D271bD H11AA1-H11AA4 H11AAI S-42662 92CS-429S1