7400A
Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
Text: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions
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TPM1617
Abstract: TPM1617-8
Text: TOSHIBA MICROWAVE MICROWAVE POWER G aAs FET S E M IC O N D U C T O R TPM1617-8 TECHNICAL DATA FEATURES: • HIGH POWER PidB ~ 3 9 .5 dBm at 1.6 GHz to 1 .7 GHz PARTIALLY ■ HIGH GAIN G“jdB = 13 dB at 1.6 GHz to 1.7 GHz HERMETICALLY SEALED PACKAGE MATCHED TYPE
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TPM1617
Abstract: TPM1617-8
Text: High Power GaAs FET L, S-Band TPM1617-8 FEATURES: • HIGH POWER P ld B = 39.5 dBm at 1.6 GHz to 1 .7GHz ■ PARTIALLY MATCHED TYPE ■ HIGH GAIN GldB = 13 dB at 1.6 GHz to 1.7 GHz ■ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS (Ta = 25°C)
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TPM1617-8
TPM1617
TPM1617-8
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TPM1617-16
Abstract: TPM1617
Text: TPM1617-16 FEATURES: • HIGH POWER PldB = 42.5 dBm at 1.6 GHz to 1 .7 GHz > PARTIALLY MATCHED TYPE ■ HIGH GAIN GldB = 1 3 d B at 1,6 GHz to 1.7 GHz ■ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTICS Output Power at 1 dB Com
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-TPM1617-16
13dBat
RCH725G
QD2ET75
TPM1617-16
TPM1617
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TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16
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015Z10
015Z11
015Z12
015Z2
015Z3
TA8172AF
TB 1226 BN
TA8859P
mg75n2ys40
t6961A
TA8242AK
ta8644n
7378P
ta8310
7628P
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