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Rochester Electronics LLC NTP15N06AV NFET T0220 60V 0.12R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NTP15N06AV	Bulk			1,480	1 - 10 - 100 - 1000 - 10000 $0.2	Buy Now
Motorola Semiconductor Products MTP15N06V
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Bristol Electronics	MTP15N06V		2,400			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	MTP15N06V		138			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi MTP15N06VL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MTP15N06VL		406			1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics STP15N06LF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	STP15N06LF		277		2	1 - 10 $2.912 100 $2.0908 1000 $1.8368 10000 $1.8368	Buy Now
Motorola Semiconductor Products MTP15N06E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MTP15N06E		84			1 - 10 - 100 - 1000 - 10000 -	Get Quote
ComSIT USA	MTP15N06E		48			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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TP15N06 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TP15N06V Abstract: No abstract text available Text: MOTOROLA Order this document by TP15N06V SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP15N06V TMOS V Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This	OCR Scan	MTP15N06V TP15N06V 21A-06 TP15N06V	PDF
15N05L Abstract: 15N05 MTP15N05L TP15N05L ne 06l MTM15N06L Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTM 15N05L MTM 15N06L M TP15N05L M TP15N06L Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto rs N-Channel Enhancement-Mode Silicon Gate TM OS T h e se Lo g ic Le vel T M O S P o w e r F E T s are d esig ned for high	OCR Scan	15N05L 15N06L TP15N05L TP15N06L O-204AA 21A-04 O-220AB 15N05 MTP15N05L ne 06l MTM15N06L	PDF
TP15N06 Abstract: P15N06V TP15N06V 15N06VL Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M TP15N06VL TMOS V Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te c h n o lo g y d e sig n e d to a chie ve an o n -re s is ta n ce a rea prod u ct a bo u t o n e -h a lf th a t ot sta n d a rd M O S FE Ts. This	OCR Scan		PDF
TP8N10 Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40 Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI	OCR Scan	2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40	PDF
20N15 Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.	OCR Scan		PDF
IRFD1Z3 equivalent Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not	OCR Scan	VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit	PDF
MTM13N50E Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”	OCR Scan	BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E	PDF
LT 1153 Abstract: No abstract text available Text: /Turm LTC1153 T E C H N O LO G Y Auto-Reset Electronic Circuit Breaker FCRTURCS DCSCRIPTIOH • Programmable Trip Delay: 15ns to >100ms The LTC1153 electronic circuit breaker drives a low cost ■ Programmable Trip Current: 1 mA to >20A N-channel MOSFET to interrupt power to a sensitive	OCR Scan	LTC1153 100ms LTC1153 74C193 ITC1153 1N4148 47jiF LT 1153	PDF
TT220 Abstract: TP15N05L Text: SGS-THOMSON ^ 7/L MTP15N05L/FI TP15N06L/FI RfflD [s3©[ilLl gTI[SÎ©lÎ!!lDÊi N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS ^D S(on MTP15N05L MTP15N05LFI 50 V 50 V 0.15 fi 0.15 Q 15 A 10 A TP15N06L TP15N06LFI	OCR Scan	MTP15N05L/FI MTP15N06L/FI MTP15N05L MTP15N05LFI MTP15N06L MTP15N06LFI TT220 500ms TT220 TP15N05L	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by TP15N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP15N 06VL TMOS V™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This	OCR Scan	MTP15N06VL/D TP15N 21A-06	PDF