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    15N06L Search Results

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    15N06L Price and Stock

    onsemi NTD15N06LT4

    MOSFET N-CH 60V 15A DPAK
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    DigiKey NTD15N06LT4 Reel 2,500
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    Avnet Americas NTD15N06LT4 Bulk 4 Weeks 1
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    Rochester Electronics NTD15N06LT4 868 1
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    onsemi NTD15N06L-001

    MOSFET N-CH 60V 15A IPAK
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    DigiKey NTD15N06L-001 Tube 75
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    South Electronics NTD15N06L-001
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    Renesas Electronics Corporation RFD15N06LESM

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    Avnet Americas RFD15N06LESM Bulk 4 Weeks 844
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    onsemi NTD15N06L-1G

    - Bulk (Alt: NTD15N06L-1G)
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    Avnet Americas NTD15N06L-1G Bulk 4 Weeks 2,290
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    Rochester Electronics NTD15N06L-1G 2,725 1
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    onsemi NTD15N06LT4G

    - Bulk (Alt: NTD15N06LT4G)
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    Avnet Americas NTD15N06LT4G Bulk 4 Weeks 2,290
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    Rochester Electronics NTD15N06LT4G 2,591 1
    • 1 $0.1593
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    • 100 $0.1497
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    15N06L Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    15N06L PanJit Semiconductors 60V N-Channel Enhancement Mode MOSFET Original PDF
    15N06L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    15N06L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    15N06LE Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    15N06LESM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    15N06LESM9A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    15N06L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet 30V 75A TO 252

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 15N06 Power MOSFET 15A, 60V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION 1 The UTC 15N06 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


    Original
    PDF 15N06 O-220 15N06 O-220F O-252 15N06L-TA3-T 15N06G-TA3-T 15N06L-TF3-T 15N06G-TF3-T 15N06L-TN3-R mosfet 30V 75A TO 252

    15n06

    Abstract: 15N06L TO-252 MOSFET p channel TO-220F-5 package 15N06G-TF3-T MAX5862 UTC15N06
    Text: UNISONIC TECHNOLOGIES CO., LTD 15N06 Power MOSFET N -CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR „ DESCRIPTION The UTC 15N06 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


    Original
    PDF 15N06 15N06 15N06L-TA3-T 15N06G-TA3-T 15N06L-TF3-T 15N06G-TF3-T 15N06L-TN3-R 15N06G-TN3-R QW-R502-260 15N06L TO-252 MOSFET p channel TO-220F-5 package 15N06G-TF3-T MAX5862 UTC15N06

    15N06L

    Abstract: PJD15N06L 15N06 10A40
    Text: 15N06L 60V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS ON , VGS@10V,IDS@10A=40mΩ • RDS(ON), VGS@4.5V,IDS@8.0A=50mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters


    Original
    PDF PJD15N06L O-252 O-252 MIL-STD-750D 15N06L 15N06L PJD15N06L 15N06 10A40

    15N06

    Abstract: 48v mosfet switch mosfet 30V 75A TO 252
    Text: UNISONIC TECHNOLOGIES CO., LTD 15N06 Power MOSFET 15A, 60V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION 1 The UTC 15N06 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


    Original
    PDF 15N06 O-220 15N06 O-220F O-252 15N06L-TA3-T 15N06G-TA3-T 15N06L-TF3-T 15N06G-TF3-T 15N06L-TN3-R 48v mosfet switch mosfet 30V 75A TO 252

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 15N06 Power MOSFET 15A, 60V N-CHANNEL POWER MOSFET 1  The UTC 15N06 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


    Original
    PDF 15N06 15N06 O-220 O-220F O-252 15N06L-TA3-T 15N06G-TA3-T 15N06L-TF3-T 15N06G-TF3-T 15N06L-TN3-R

    15N06

    Abstract: 15N06L AN569 NTD15N06L NTD15N06LT4 SMD310 on semiconductor marking code PO
    Text: 15N06L Power MOSFET 15 Amps, 60 Volts, Logic Level N–Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. 15 AMPERES 60 VOLTS RDS on = 100 mΩ Typical Applications


    Original
    PDF NTD15N06L tpv10 tpv10 r14525 NTD15N06L/D 15N06 15N06L AN569 NTD15N06L NTD15N06LT4 SMD310 on semiconductor marking code PO

    sot-23 marking code 352

    Abstract: No abstract text available
    Text: 15N06L Power MOSFET 15 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 15 AMPERES 60 VOLTS RDS on = 85 mW (TYP)


    Original
    PDF NTD15N06L tpv10 sot-23 marking code 352

    15n06

    Abstract: 15N06-TA3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 15N06 Power MOSFET N -CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR 1 TO-220 „ DESCRIPTION The UTC 15N06 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate


    Original
    PDF 15N06 O-220 15N06 O-252 15N06L 15N06G 15N06-TA3-T 15N06-TN3-R 15N06L-TA3-T 15N06L-TN3-R

    15N06L

    Abstract: 15N06 369D AN569 NTD15N06L NTD15N06LT4 SMD310
    Text: 15N06L Power MOSFET 15 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 15 AMPERES 60 VOLTS RDS on = 85 mW (TYP)


    Original
    PDF NTD15N06L tpv10 NTD15N06L/D 15N06L 15N06 369D AN569 NTD15N06L NTD15N06LT4 SMD310

    15N05L

    Abstract: 15N05 MTP15N05L TP15N05L ne 06l MTM15N06L
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTM 15N05L MTM 15N06L M TP15N05L M 15N06L Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto rs N-Channel Enhancement-Mode Silicon Gate TM OS T h e se Lo g ic Le vel T M O S P o w e r F E T s are d esig ned for high


    OCR Scan
    PDF 15N05L 15N06L TP15N05L TP15N06L O-204AA 21A-04 O-220AB 15N05 MTP15N05L ne 06l MTM15N06L

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan
    PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    F15N06L

    Abstract: No abstract text available
    Text: ti3G2271 0D5M773 Th? HAS R FM 15N 05L/06L R FP15N 05L/06L HARRIS N-Channel Logic Level Power Field-Effect Transistors L2 FET A ug ust 19 91 Package Features TO-204AA BOTTOM VIEW • 15A , 5 0 V and 6 0 V • rD S (O N ) = 0 .1 4 « DRAIN /( F L A N G E )


    OCR Scan
    PDF ti3G2271 0D5M773 05L/06L FP15N O-204AA T0-220A 9JCS-376S4 36I48 F15N06L

    F15N05L

    Abstract: F15N06L f15n05 f15n06 N05L RFP15N06L 3SI4 RFM15N05L RFM15N06L RFP15N05L
    Text: R F M 1 5 N 0 5 L /0 6 L H A IR R IS RFP15N05L/06L N-Channel Logic Level Power Field-Effect Transistors L2FET August 1991 Package Features T0-204A A BOTTOM VIEW • 15A, 50V and 60V • rDS(ON) = 0 .1 4 0 DRAIN ^ {F L A N G E ) SOURCE • Design Optimized for 5V Gate Drives


    OCR Scan
    PDF RFM15 N05L/06L RFP15N05L/06L RFM15N05L RFM15N06L RFP15N05L RFP15N06L S2CS-3SI47 RFM15N05L, RFM15N06L, F15N05L F15N06L f15n05 f15n06 N05L 3SI4

    5N06

    Abstract: No abstract text available
    Text: 3QE D • T TS ^S B? S G S - T H O M ^ 7 # 005^07= 3 ■ ^ S O N M T P 1 5 N 0 5 L /F I ^ O g œ iltL tK g T O K Ü D g i M T P 1 5 N 0 6 L /F I s: G _s-THOMSON N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIMINARY DATA TYPE MTP15N05L


    OCR Scan
    PDF TP15N05L TP15N05LFI TP15N06L TP15N06LFI 500ms 5N06