swhyste
Abstract: TC-165 mosfet 260n 254p AEI Semiconductors Si4768CY Si4770CY diode M7 156n diode NMOS MODEL PARAMETERS SPICE
Text: SPICE Device Model Si4770CY Vishay Siliconix SI4770CY N-Channel Synchronous MOSFETs SCOPE This document contains a description of the SPICE model and test and application circuits for the Vishay SI4770CY N-channel Synchronous MOSFETs with Break-Before-Make.
|
Original
|
PDF
|
Si4770CY
18-Jul-08
swhyste
TC-165
mosfet 260n
254p
AEI Semiconductors
Si4768CY
diode M7
156n diode
NMOS MODEL PARAMETERS SPICE
|
TS87C52X2-MCA
Abstract: TEMIC DATABOOK temic gateway PDIP40 PLCC44 PQFP44 TS87C52X2 VQFP44 251G2D
Text: Qualification Package TS87C52X2 0.5 µm SCMOS3 NV Technology June 1999 TEMIC SEMICONDUCTORS IS AN ATMEL COMPANY Rev. A– June 1999 1 1. General Information. 3
|
Original
|
PDF
|
TS87C52X2
TS87C52X2-MCA
TEMIC DATABOOK
temic gateway
PDIP40
PLCC44
PQFP44
TS87C52X2
VQFP44
251G2D
|
intel 80 82
Abstract: temic gateway ITS9000 JESD22-A110 marking code 4e PDIP40 PLCC44 PQFP44 TS80C52X2 VQFP44
Text: Qualpack TS80C52X2 Qualification Package TS80C52X2 Automotive 0.5 µm SCMOS3 Technology TS80C52X2 0.5 µm SCMOS3 JULY 1999 TEMIC SEMICONDUCTORS IS AN ATMEL COMPANY Rev.B– JULY 1999 1 Qualpack TS80C52X2 1. General Information . 3
|
Original
|
PDF
|
TS80C52X2
TS80C52X2
intel 80 82
temic gateway
ITS9000
JESD22-A110
marking code 4e
PDIP40
PLCC44
PQFP44
VQFP44
|
CQPJ
Abstract: marking code 4e PDIP40 PLCC44 PQFP44 TS80C31X2 TS80C32X2 VQFP44 Ablestick intel 80 82
Text: Qualpack TS80C31X2/C32X2 Qualification Package TS80C31X2 / TS80C32X2 0.5 µm SCMOS3 Technology TS80C31X2 / TS80C32X2 0.5 µm SCMOS3 MARCH 1999 TEMIC SEMICONDUCTORS IS AN ATMEL COMPANY Rev. A– March 1999 1 Qualpack TS80C31X2/C32X2 1. General Information . 3
|
Original
|
PDF
|
TS80C31X2/C32X2
TS80C31X2
TS80C32X2
CQPJ
marking code 4e
PDIP40
PLCC44
PQFP44
TS80C32X2
VQFP44
Ablestick
intel 80 82
|
temic gateway
Abstract: TOX marking TS83C51RX2 ITS9000 JESD22-A110 marking code 4e TEMIC DATABOOK PDIP40 PLCC44 TS83C51RB2
Text: Qualpack TS83C51RX2 Qualification Package TS83C51RB2 / TS83C51RC2 0.5 µm SCMOS3 Technology TS83C51RB2 / RC2 0.5 µm SCMOS3 MARCH 1999 TEMIC SEMICONDUCTORS IS AN ATMEL COMPANY Rev. A– March 1999 1 Qualpack TS83C51RX2 1. General Information . 3
|
Original
|
PDF
|
TS83C51RX2
TS83C51RB2
TS83C51RC2
temic gateway
TOX marking
TS83C51RX2
ITS9000
JESD22-A110
marking code 4e
TEMIC DATABOOK
PDIP40
PLCC44
|
n20 n21 fet
Abstract: 53E1 FDG6318PZ SC-70-6 SC70-6 dual transistors sc-70-6 N2 SC70 SC-70-6 zener 15v 27E4 55E-4
Text: FDG6318PZ Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s especially tailored to minimize on-state resistance. This device has been designed especially for bipolar digital
|
Original
|
PDF
|
FDG6318PZ
1200m
SC-70-6
n20 n21 fet
53E1
FDG6318PZ
SC70-6
dual transistors sc-70-6
N2 SC70
SC-70-6 zener 15v
27E4
55E-4
|
IRF640N
Abstract: 11A ABS IRF640N FAIRCHILD MOSFET 640N 640N irf640n datasheet N-Channel MOSFET 200v IRF-640N
Text: IRF640N N-Channel Power MOSFETs 200V, 18A, 0.15Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.102Ω (Typ), VGS = 10V • UIS Rateing Curve • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models
|
Original
|
PDF
|
IRF640N
O-220
100oC,
IRF640N
11A ABS
IRF640N FAIRCHILD
MOSFET 640N
640N
irf640n datasheet
N-Channel MOSFET 200v
IRF-640N
|
Untitled
Abstract: No abstract text available
Text: KSM038AN06A0 / KSMI038AN06A0 TO-220AB Features TO-262AB D = 80A • r DS ON = 3.5mΩ (Typ.), V GS = 10V, I • Qg(tot) = 95nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101
|
Original
|
PDF
|
KSM038AN06A0
KSMI038AN06A0
O-220AB
O-262AB
24e-3
08e-3
28e-2
FDP035AN06A0T
45e-3
65e-2
|
TSS-IO16-A
Abstract: EIA-556-A tssio16a ATMEL flow soldering Z31300 TS87251g2 marking code 4e TSSIO16E Z27184 ts87c51
Text: Atmel Wireless & Microcontrollers Qualification Package TSSIO16E in Automotive 0.5 µm SCMOS3 Technology TSSIO16E Automotive 0.5µm SCMOS3 August 2000 Rev. 0– AUGUST 2000 1 Atmel Wireless & Microcontrollers 1. General
|
Original
|
PDF
|
TSSIO16E
TSSIO16E
TSS-IO16-A
EIA-556-A
tssio16a
ATMEL flow soldering
Z31300
TS87251g2
marking code 4e
Z27184
ts87c51
|
KP-69
Abstract: mosfet 30V 18A TO 252 FDD24AN06LA0
Text: FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management
|
Original
|
PDF
|
FDD24AN06LA0
O-252AA
KP-69
mosfet 30V 18A TO 252
|
FQP45N03L
Abstract: FQP45N03
Text: FQP45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves
|
Original
|
PDF
|
FQP45N03L
1450pF
O-220AB
FQP45N03L
FQP45N03
|
Untitled
Abstract: No abstract text available
Text: FDP8880 / FDB8880 N-Channel PowerTrench MOSFET 30V, 54A, 11.6mΩ Features General Description r DS ON = 14.5mΩ, VGS = 4.5V, ID = 40A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
|
Original
|
PDF
|
FDP8880
FDB8880
FDB8880
O-263AB
O-220AB
|
19E-9
Abstract: No abstract text available
Text: FDP8870 N-Channel PowerTrench MOSFET 30V, 156A, 4.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low
|
Original
|
PDF
|
FDP8870
O-220AB
19E-9
|
n13 sot 65
Abstract: FDT461N 29e8 RS80 marking 461 m067
Text: FDT461N N-Channel Logic Level PowerTrench MOSFET 100V, 0.4A, 2.5Ω Features Applications • rDS ON = 1.45Ω (Typ.), VGS = 4.5V, ID = 0.4A • Servo Motor Load Control • Qg(tot) = 2.36nC (Typ.), VGS = 10V • DC-DC converters • Low Miller Charge • Low QRR Body Diode
|
Original
|
PDF
|
FDT461N
OT-223
110oC/W)
n13 sot 65
FDT461N
29e8
RS80
marking 461
m067
|
|
|
2511NZ
Abstract: FDW2511NZ dual mosfet tt 6 pin Diode N7 S2 2511N 6 pin diode n10
Text: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
|
Original
|
PDF
|
FDW2511NZ
FDW2511NZ
2511NZ
dual mosfet tt 6 pin
Diode N7 S2
2511N
6 pin diode n10
|
Mosfet FDP8870
Abstract: 19E-9 FDP8870
Text: FDP8870 e May 2008 FDP8870 tmM N-Channel PowerTrench MOSFET 30V, 156A, 4.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
|
Original
|
PDF
|
FDP8870
O-220AB
FDP8870
Mosfet FDP8870
19E-9
|
HP83000
Abstract: 0.7 um CMOS process parameters Nitto 9850 JEDEC20 G226 Nitto MP8000 MP8000 ITS9000 atmel PLCC bottom "marking" MG2RTP
Text: Qualpack MG2RT/MG2RTP Qualification Package MG2RT / MG2RTP 0.5 µm Radiation Tolerant SCMOS3 Technology MG2RT / MG2RTP 0.5 µm SCMOS3 1999 August TEMIC SEMICONDUCTORS IS AN ATMEL COMPANY Rev. 0 – 1999 August 1 Qualpack MG2RT/MG2RTP 1. General Information . 3
|
Original
|
PDF
|
|
N302AP
Abstract: ISL9N302AP3 1E25 l 129 v 1E40
Text: ISL9N302AP3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching Optimized for switching applications, this device improves
|
Original
|
PDF
|
ISL9N302AP3
11000pF
110nC,
O-220AB
N302AP
ISL9N302AP3
1E25
l 129 v
1E40
|
Untitled
Abstract: No abstract text available
Text: FDP8874 N May 2008 FDP8874 tmM N-Channel PowerTrench MOSFET 30V, 114A, 5.3mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
|
Original
|
PDF
|
FDP8874
FDP8874
|
FDN363N
Abstract: N6 marking diode marking n9
Text: Preliminary FDN363N N-Channel PowerTrench MOSFET 100V, 1A, 240mΩ Features Applications • r DS ON = 200mΩ (Typ.), VGS = 10V, ID = 1A • DC/DC converters • Qg(tot) = 4nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse)
|
Original
|
PDF
|
FDN363N
250oC/W
FDN363N
N6 marking diode
marking n9
|
Untitled
Abstract: No abstract text available
Text: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
|
Original
|
PDF
|
FDW2512NZ
FDW2512NZ
|
67E-3
Abstract: FDI038AN06A0 FDP038AN06A0 n10 diode abs s1a NL104
Text: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8mΩ Features Applications • r DS ON = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge
|
Original
|
PDF
|
FDP038AN06A0
FDI038AN06A0
O-220AB
O-262AB
67E-3
FDI038AN06A0
n10 diode
abs s1a
NL104
|
Untitled
Abstract: No abstract text available
Text: FDP3672 N-Channel PowerTrench MOSFET 107V, 41A, 33mΩ Features Applications • r DS ON = 26mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
|
Original
|
PDF
|
FDP3672
O-220AB
|
MOSFET S1A
Abstract: M060 45E-2
Text: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
|
Original
|
PDF
|
FDP3672
O-220AB
MOSFET S1A
M060
45E-2
|
