MARCONI amplifier
Abstract: 84-1LMI NN12 P35-5112-000-200
Text: P35-5112-000-200 HEMT MMIC LNA 8.5 – 10.5GHz Features • • 19dB Gain Typical 1dB Noise Figure Description The P35-5112-000-200 is an 8.5 – 10.5GHz Gallium Arsenide low noise amplifier. This product is intended for use in a wide range of applications including telecommunications, instrumentation and electronic warfare.
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P35-5112-000-200
P35-5112-000-200
462/SM/02343/200
MARCONI amplifier
84-1LMI
NN12
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TRANSISTOR R1002
Abstract: R1002 TRANSISTOR R1002 84-1LMI XR1002
Text: 20.0-32.0 GHz GaAs MMIC Receiver R1002 October 2001 - Rev 10/05/01 Features Chip Device Layout y 20.0-32.0 GHz Frequency Range High Dynamic Range Receiver +4.0 dBm Third Order Intercept 3.0 dB Typical Noise Figure 18.0 dB Typical Image Rejection 100% On-Wafer RF and DC Testing
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R1002
MIL-STD-883
TRANSISTOR R1002
R1002 TRANSISTOR
R1002
84-1LMI
XR1002
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DC-10
Abstract: DC-20 FMS2027 FMS2027-000 MIL-HDBK-263
Text: FMS2027 Preliminary Datasheet v2.2 DC–20 GHZ MMIC SPDT NON-REFLECTIVE SWITCH FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Available in die form Non-Reflective design Low Insertion loss 2.2 dB at 20GHz typical Very high isolation 40 dB at 20GHz typical
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FMS2027
20GHz
FMS2027
FMS2027-000
DC-10
DC-20
FMS2027-000
MIL-HDBK-263
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20GHZ
Abstract: FMA3008 MIL-HDBK-263
Text: FMA3008 FMA3008 2GHZ TO 20GHZ BROADBAND MMIC AMPLIFIER Die: 2.35mmx1.78mm Product Description Features The FMA3008 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using the
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FMA3008
20GHZ
35mmx1
FMA3008
23dBm
-10dB
FMA3008-000
FMA3008-000SQ
MIL-HDBK-263
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FMA3011
Abstract: HEMT MMIC POWER AMPLIFIER MIL-HDBK-263 15 GHz power amplifier Output Power 37dBm 2068 d 05332 214-3556
Text: FMA3011 FMA3011 12.7GHZ TO 16GHZ MMIC POWER AMPLIFIER Package Style: Bare Die Product Description Features The FMA3011 is a high performance 12.7GHz to 16GHz Gallium Arsenide monolithic power amplifier with sufficiently high gain to ensure that IMD products from
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FMA3011
16GHZ
FMA3011
FMA3011-000
DS090306
FMA3011-000SQ
FMA3011-000S3
HEMT MMIC POWER AMPLIFIER
MIL-HDBK-263
15 GHz power amplifier Output Power 37dBm
2068 d
05332
214-3556
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FMS2027
Abstract: FMS2027-000 MIL-HDBK-263
Text: FMS2027 FMS2027 DC-20GHz MMIC LOW LOSS SPDT ABSORPTIVE SWITCH Package Style: Bare Die Product Description Features The FMS2027 is a low loss, high isolation broadband single-pole double-throw Gallium Arsenide switch, designed on the FL05 0.5 m switch process from RFMD. It
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FMS2027
DC-20GHz
FMS2027
20GHz
FMS2027-000
DS090612
FMS2027-000SQ
FMS2027-000
MIL-HDBK-263
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84-1LMI
Abstract: NN12 P35-5112-000-200
Text: Data sheet HEMT MMIC LNA 8.5 – 10.5GHz Features • 19dB Gain Typical • 1dB Noise Figure The P35-5112-000-200 is an 8.5 – 10.5GHz Gallium Arsenide low noise amplifier. This product is intended for use in a wide range of applications including telecommunications, instrumentation and electronic warfare.
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P35-5112-000-200
P35-5112-000-200
462/SM/02343/200
84-1LMI
NN12
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84-1 LMI
Abstract: 22-A114-B FMS2021
Text: FMS2021 Advanced Product Information 1.1 DC- 6 GHz SPDT WLAN GaAs Low Loss Switch Features: ♦ ♦ ♦ ♦ Functional Schematic Suitable for Multi-band WLAN Applications Excellent low control voltage performance Very low Insertion loss <0.7 dB at 6GHz typical
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FMS2021
FMS2021
22-A114-B.
MIL-STD-1686
MILHDBK-263.
84-1 LMI
22-A114-B
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30SPA0553
Abstract: 30SPA0557 84-1LMI
Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier 30SPA0553 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing
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30SPA0553
01-Sep-05
MIL-STD-883
30SPA0553
30SPA0557
84-1LMI
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2Xf transistor
Abstract: TRANSISTOR 2xf xf 2 6-pin B 1566 Transistor
Text: 7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler X1000 June 2006 - Rev 23-Jun-06 Features Excellent Broadband Mixer Driver Single Ended Fed Doubler with Distributed Buffer Amplifier Excellent LO Driver for Mimix Receivers +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing
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23-Jun-06
X1000
MIL-STD-883
XR1002
2Xf transistor
TRANSISTOR 2xf
xf 2 6-pin
B 1566 Transistor
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P1014
Abstract: xp1014 84-1LMI XP1006 bonding GHz HPA
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 April 2006 - Rev 14-Apr-06 Features XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit
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APH478
P1014
14-Apr-06
XP1006/7
MIL-STD-883
XP1014
I0005129
P1014
xp1014
84-1LMI
XP1006 bonding
GHz HPA
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15MPA0566
Abstract: 84-1LMI
Text: 11.0-19.0 GHz GaAs MMIC Power Amplifier 15MPA0566 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883
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15MPA0566
01-Sep-05
MIL-STD-883
15MPA0566
84-1LMI
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8SDV0500
Abstract: 84-1LMI 221E-09
Text: 2.0-16.0 GHz GaAs MMIC Frequency Divider May 2005 - Rev 05-May-05 8SDV0500 Features Chip Device Layout tio n Divide-by-Four +5.0 dBm Output Power -30 dBc Fundamental Leakage Single-ended or Differential Input & Output 100% On-Wafer, DC and Output Power Testing
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05-May-05
8SDV0500
MIL-STD-883
8SDV0500
84-1LMI
221E-09
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U1001
Abstract: 84-1LMI XP1005 XU1001 circuit diagram of 4 channel 315 rf transmitter
Text: 33.0-40.0 GHz GaAs MMIC Transmitter U1001 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-Harmonic Transmitter Low DC Power Consumption Optional Power Bias 8.0 dB Conversion Gain 30 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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U1001
13-May-05
MIL-STD-883
U1001
84-1LMI
XP1005
XU1001
circuit diagram of 4 channel 315 rf transmitter
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IC 566 vco
Abstract: 6OSC0460 84-1LMI
Text: 5.5-6.5 GHz GaAs MMIC Voltage Controlled Oscillator May 2005 - Rev 05-May-05 6OSC0460 Features Chip Device Layout tio n On-Chip Resonator +4.5 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing
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05-May-05
6OSC0460
100KHz
MIL-STD-883
IC 566 vco
6OSC0460
84-1LMI
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PAD41
Abstract: No abstract text available
Text: HV577/HV579 Die Specifications Pad Coordinates in Microns 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 23 42 22 21 20 43 19 46 18 17 47 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
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HV577/HV579
HV579
HVOUT1/64
HVOUT2/63
HVOUT3/62
HVOUT4/61
HVOUT5/60
HVOUT6/59
HVOUT7/58
HVOUT8/57
PAD41
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Untitled
Abstract: No abstract text available
Text: 10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler X1004-BD January 2007 - Rev 17-Jan-07 Features Excellent Mixer Driver 2-Stage Active Design Can be Used to Drive XR1002 Receiver +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883
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17-Jan-07
X1004-BD
XR1002
MIL-STD-883
XX1004-BD
XX1004-BD-000V
XX1004-BD-000W
XX1004-BD-EV1
XX1004-BD
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inductance R600
Abstract: No abstract text available
Text: 21.2-23.6 GHz GaAs MMIC Transmitter March 2005 - Rev 01-Mar-05 Features Chip Device Layout tio n Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +20.0 dBm Output Third Order Intercept OIP3 2.0 dBm LO Drive Level 15.0 dB Image Rejection
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01-Mar-05
MIL-STD-883
inductance R600
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U1000
Abstract: XB1004 XU1000
Text: 17.0-27.0 GHz GaAs MMIC Transmitter U1000 May 2005 - Rev 13-May-05 Features Chip Device Layout Fundamental Transmitter Low DC Power Consumption Optional Power Bias Configuration 0.0 dB Conversion Gain +12.0 dBm Third Order Intercept IIP3 100% On-Wafer RF and DC Testing
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U1000
13-May-05
MIL-STD-883
U1000
XB1004
XU1000
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IC ATA 2388
Abstract: ATA 2388 OB 2259 pin diagram of ic 3843 ci 4019 5345 P/OB 2259
Text: Supertex inc. _ HV517 Advance Information 21-Channel CMOS to High Voltage Translator Features General Description □ □ □ □ □ The HV517 is a high voltage level translator IC with 21channel CMOS inputs and 42 high voltage outputs. Each of its 21 outputs and 21 inverted outputs is capable
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HV517
21-Channel
HV517
21channel
1200mW
HV517X
HVout20
ut20B
HV0ut18
IC ATA 2388
ATA 2388
OB 2259
pin diagram of ic 3843
ci 4019
5345
P/OB 2259
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16G073-2L1
Abstract: ic 40 pin
Text: TEKTRONIX INC/ TRI ÛÜINT ÔTGbElfl 0ÜD Q5? b 4 B T R Ú 2bE D 'T '7 4 - ß - o G ig a B it L o g ic 16G073 & Limiting Amplifier 18 dB Gain /1 GHz Bandwidth FEATURES • High gain: 18 dB • Broad Bandwidth: 1 GHz min. cut-off frequency • Low input and output VSWR
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16G073
250mW
16G073
050P3
0080TOP
16G073-2L1
ic 40 pin
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KT 829 b
Abstract: FPD1 808 nm 1000 mw 2 pins KT 829
Text: T E K T R O N I X INC/ TRI ÛUI NT 2 bE » E3 B*ïDb23.a O O D D S b l 3 Q T R Û O M !L Î G ig a B it L o g ic 16G071 Transimpedance Amplifier 18 dB Gain / 700 MHz Bandwidth FEATURES 1High gain > 18 dB 1Broad Bandwith: DC to 700 MHz typ. >Low noise: 3 pA//Hz typ. for 16G071-30L1
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16G071
16G071-30L1
16G071
050P3
0080TOP
KT 829 b
FPD1
808 nm 1000 mw 2 pins
KT 829
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Untitled
Abstract: No abstract text available
Text: TEKTRONIX INC/ TRI ÛU IN T öSGbPlfl 0 0 0 G M 5 G M O T R Ö 2bE D T [ ïniüll G ig a B it L o g ic q S •\c i - O S ' 10G065 10G065K 7 Stage Ripple Counter/Divider 3.0 GHz Clock Rate 10G PicoLogic Family FEATURES >10G PicoLogic I/O compatible • Wlre-OR output capability
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10G065
10G065K
10G065K
050P3
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PG100A
Abstract: S0030 GaAs IC High Isolation Positive Control Switch 4GHZ GBL 16G020
Text: TEKTRONIX INC/ TRI Û U I N T 2bE D fl*iOt21ù O D G G S 1 S b " P G ig a B it L o g ic S M ITRÚ \ 16G020/S0030 Dual GaÂs SPST Switch 0.5 nS Switching Time FEATURES Ultra low DC power consumption 60p.W typical Low insertion loss (< 3dB) Two layer gold metalization
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iOt21ù
16G020/S0030
S0030
500ps.
050P3
0080TOP
PG100A
GaAs IC High Isolation Positive Control Switch 4GHZ
GBL 16G020
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