Untitled
Abstract: No abstract text available
Text: TLP173A TOSHIBA Photocoupler Photorelay TLP173A Telecommunications Control Equipment Data Acquisition System Security Equipment Measurement Equipment Unit: mm The Toshiba TLP173A consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a MFSOP6 package.
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TLP173A
TLP173A
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Untitled
Abstract: No abstract text available
Text: TLP173A TOSHIBA Photocoupler Photorelay TLP173A Telecommunications Control Equipment Data Acquisition System Security Equipment Measurement Equipment Unit: mm The Toshiba TLP173A consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a MFSOP6 package.
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TLP173A
TLP173A
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E67349
Abstract: Photocoupler 60v mfsop6
Text: TLP173A TOSHIBA Photocoupler Photorelay TLP173A Telecommunications Control Equipment Data Acquisition System Security Equipment Measurement Equipment Unit: mm The Toshiba TLP173A consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a MFSOP6 package.
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TLP173A
TLP173A
E67349
Photocoupler 60v
mfsop6
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E67349
Abstract: No abstract text available
Text: TLP2118 TOSHIBA PHOTOCOUPLER GaAℓAs Ired & PHOTO-IC TLP2118 PDP Plasma Display Panel Unit: mm 8 7 6 5 The Toshiba TLP2118 consists of GaAℓAs infrared light emitting diodes and integrated high-gain, high-speed photodetectors. The TLP2118 is housed in the SO8 package.
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TLP2118
TLP2118
E67349
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toshiba tape and reel
Abstract: TA7291F
Text: [3] Tape Specifications for Flat-Package Bipolar ICs [ 3 ] Tape Specifications for Flat-Package Bipolar ICs 1. Scope These specifications apply to the taping for flat-package bipolar ICs supplied by Toshiba Corporation and to related issues such as ordering.
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TA7291F
toshiba tape and reel
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TLP2166A
Abstract: TLP2166
Text: TLP2166A TOSHIBA PHOTOCOUPLER GaAℓAs Ired & PHOTO-IC TLP2166A Plasma Display Panels PDPs Unit: mm High-Speed Interfaces The Toshiba TLP2166A consists of a GaAℓAs light emitting diode and a integrated high-gain, high-speed photodetector. The TLP2166A is housed in the 8-pin SO package.
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TLP2166A
TLP2166A
TLP2166
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tlp358
Abstract: TLP358F tp5ab toshiba shipping methods
Text: TLP358/TLP358F TOSHIBA Photocoupler GaAℓAs IRED LED + Photo IC TLP358,TLP358F Industrial Inverter MOS FET / IGBT Gate Driver IH Induction Heating TLP358 Unit: mm The TOSHIBA TLP358 consists of a GaAℓAs light-emitting diode and an integrated photodetector. This unit is an 8-lead DIP package.
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TLP358/TLP358F
TLP358
TLP358F
TLP358F
tp5ab
toshiba shipping methods
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tlp2108
Abstract: TLP2105
Text: TLP2108 TOSHIBA PHOTOCOUPLER GaAℓAs Ired & PHOTO-IC TLP2108 Isolated Bus Drivers Unit: mm The Toshiba TLP2108 consists of GaAℓAs light emitting diodes and integrated high-gain, high-speed photodetectors. The TLP2108 is housed in the SO8 package. The photodetector has a totem-pole output stage that can source and sink
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TLP2108
TLP2108
TLP2105,
TLP2105
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TLP2108
Abstract: TLP2105
Text: TLP2108 TOSHIBA PHOTOCOUPLER GaAℓAs Ired & PHOTO-IC TLP2108 Isolated Bus Drivers Unit: mm The Toshiba TLP2108 consists of GaAℓAs light emitting diodes and integrated high-gain, high-speed photodetectors. The TLP2108 is housed in the SO8 package. The photodetector has a totem-pole output stage that can source and sink
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TLP2108
TLP2108
TLP2105,
TLP2105
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TLP2105
Abstract: TLP2108
Text: TLP2105 TOSHIBA PHOTOCOUPLER GaAℓAs Ired & PHOTO-IC TLP2105 Isolated Bus Drivers Unit: mm The Toshiba TLP2105 consists of GaAℓAs light emitting diodes and integrated high gain, high-speed photodetectors. The TLP2105 is housed in the 8-pin SO package. The photodetector has totem-pole output stage that can source and sink
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TLP2105
TLP2105
TLP2108,
TLP2108
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TLP2105
Abstract: TLP2108
Text: TLP2105 TOSHIBA PHOTOCOUPLER GaAℓAs Ired & PHOTO-IC TLP2105 Isolated Bus Drivers Unit: mm The Toshiba TLP2105 consists of GaAℓAs light emitting diodes and integrated high gain, high-speed photodetectors. The TLP2105 is housed in the 8-pin SO package. The photodetector has totem-pole output stage that can source and sink
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TLP2105
TLP2105
TLP2108,
TLP2108
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TYAD00AC00BUGK
Abstract: SCR Handbook, rca GBNAND P-FBGA224-1218-0 THGV ACMD18 ACMD42 p-fbga224 Toshiba confidential NAND THGVS1G3D1CXGI1
Text: TYAD00AC00BUGK TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE Low Power SDRAM, Nand E2PROM and Giga Byte Nand E2PROM Mixed Multi-Chip Package DESCRIPTION Lead-Free The TYAD00AC00BUGK is a mixed multi-chip package containing a 1,073,741,824-bit 536,870,912-bit x 2devices
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TYAD00AC00BUGK
TYAD00AC00BUGK
824-bit
912-bit
256-bit
224-pin
001e800
001e810
003d400
SCR Handbook, rca
GBNAND
P-FBGA224-1218-0
THGV
ACMD18
ACMD42
p-fbga224
Toshiba confidential NAND
THGVS1G3D1CXGI1
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toshiba packing label
Abstract: TLN241 750H ST-100S TOSHIBA ADDC pine alpha st-100s arakawa chemical
Text: TLN241 TOSHIBA Infrared LED TLN241 ○ Small type Infrared LED Size: 1.6 L mm x 0.95 (W) mm × 0.6 (H) mm • Surface-mount device • Transparent resin package • Wide viewing angle • Low-profile package (t = 0.6 mm) • 4-mm pitch tape reel (4000 pcs/reel)
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TLN241
toshiba packing label
TLN241
750H
ST-100S
TOSHIBA ADDC
pine alpha st-100s arakawa chemical
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toshiba tape and reel
Abstract: No abstract text available
Text: TOSHIBA 13. Taping o f Flat Package IC’s Our flat package IC ’s in the style o f taping packages are suppliable according to th e follow ing specifications. As for fu rth er details, please inquire at respective sales divisions in charge. Taping Specifications for Flat Packages o f Toshiba BIP IC’s
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TA7688F
toshiba tape and reel
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C20V
Abstract: 1SV102 C25V
Text: 1SV102 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 02 Unit in mm AM RADIO BAND TUNING APPLICATIONS. 4.3 MAX. • • • High Capacitance Ratio : C 2V / C25V = 23 Typ. High Q : Q = 400 (Typ.) Small Package. CL55MAX. .
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1SV102
0L55MAX.
C20V
1SV102
C25V
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1SV102
Abstract: C20V C25V
Text: TOSHIBA 1SV102 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 02 Unit in mm AM RADIO BAND TUNING APPLICATIONS. 4.3 MAX. • High Capacitance Ratio • High Q • Small Package. : C2V / C25V = 23 Typ. : Q = 400 (Typ.) CL55M AX. .
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1SV102
0L55MAX.
1SV102
C20V
C25V
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sv101
Abstract: No abstract text available
Text: TOSHIBA 1SV101 TOSHIBA VARIABLE CAPACITANCE DIODE FM TUNER APPLICATIONS. SILICON EPITAXIAL PLANAR TYPE 1 S V 101 Unit in mm 4.3 MAX. • • • • High Capacitance Ratio Low Series Resistance Small Package. Low Tuning Voltage Range C3V/C9V = 2-0~2.7 rs = 0.30 Typ.
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1SV101
Rever89-31
sv101
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c9v diode
Abstract: 1SV101
Text: TOSHIBA 1SV101 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 01 Unit in mm FM TUNER APPLICATIONS 4.2MAX. • • • • High Capacitance Ratio Low Series Resistance Small Package. Low Tuning Voltage Range C3 V / Cgy = 2.0~2.7 rs = 0.3 Cl Typ.
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1SV101
55MAX.
Rev01-01-16
c9v diode
1SV101
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1SV101
Abstract: c9v diode
Text: TOSHIBA 1SV101 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 01 FM TUNER APPLICATIONS. Unit in mm 4.3 MAX. • • • • High Capacitance Ratio Low Series Resistance Small Package. Low Tuning Voltage Range ^3V / Cgy = 2.0~2.7 rs = 0.30 Typ.
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1SV101
0L55MAX.
50MHz
1SV101
c9v diode
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1SV102
Abstract: No abstract text available
Text: TOSHIBA 1 SV 102 TOSHIBA VARIABLE CAPACITANCE DIODE u v SILICON EPITAXIAL PLANAR TYPE m ? AM RADIO BAND TUNING APPLICATIONS. • High Capacitance Ratio : C2V/,^25V ~23 Typ. • High Q : Q = 400 (Typ.) • Small Package. M A X IM U M RATINGS (Ta = 25 °0
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1sv149
Abstract: AY 3 8210
Text: 1SV149 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE U 1 V SILICON EPITAXIAL PLANAR TYPE A Q Unit in mm AM RADIO BAND TUNING APPLICATIONS. • • • High Capacitance Ratio : C iy /C g y = 15 Min. High Q : Q = 200 (Min.) Small Package Low Voltage Operation ; 1V-8V
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1SV149
1sv149
AY 3 8210
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1SV149
Abstract: No abstract text available
Text: TOSHIBA 1SV 149 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 49 Unit in mm AM RADIO BAND TUNING APPLICATIONS 4.2MAX. • High Capacitance Ratio : C iy /C g y = 15 Min. • High Q : Q = 200 (Min.) • Small Package • Low Voltage Operation
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1SV149
1SV149
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1SV102
Abstract: No abstract text available
Text: TOSHIBA 1S V 102 TOSHIBA VARIABLE CAPACITANCE DIODE 1S SILICON EPITAXIAL PLANAR TYPE 102 V AM RADIO BAND TUNING APPLICATIONS. U nit in mm 4.3 MAX. • High Capacitance Ratio : C2V ¡ C25V = 23 Typ. • High Q : Q = 400 (Typ.) • Sm all Package. Q S5M AX.
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1SV149
Abstract: No abstract text available
Text: 1SV 149 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 49 Unit in mm AM RADIO BAND TUNING APPLICATIONS. • • • • High Capacitance Ratio : C iy /C g y = 15 Min. High Q : Q = 200 (Min.) Small Package Low Voltage Operation : 1V-8V
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1SV149
1SV149
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