Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SV230 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV230 Unit in mm CATV CONVERTER 1st OSC TUNING. • High Capacitance Ratio : C2V ! C20V = 8 Typ. • Low Series Resistance : rs = 0.730 (Typ.) • Useful for Small Size Tuner.
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1SV230
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C20V
Abstract: No abstract text available
Text: 1SV230 SILICON EPITAXIAL PLANAR TYPE CATV CONVERTER 1st OSC TUNING. Unit in mm . High Capacitance Ratio : C2V/C20V=8 Typ. f 0.2 . Low Series Resistance 1 .2 5 - 0 1 : rs=0.73il (Typ.) ffll . Useful for Samll Size Tuner. ±0.05 + 0.1 +01 0 .3 - 0.05 0.1 5 - 0 0 6
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1SV230
C2V/C20V
470MHz
C20V
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1SV286
Abstract: C20V
Text: TOSHIBA 1SV286 1 SV2 8 6 TOSHIBA VARIABLE CAPACITANCE DIODE CATV CONVERTER 1'st OSC TUNING SILICON EPITAXIAL PLANAR TYPE Unit in mm • High Capacitance Ratio : C2V / C20V = 8-9 TYP. • Low Series Resistance : rs = 0.730 (TYP.) • Useful for Small Size Tuner.
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1SV286
C2y/C20V
10kil)
0014g
f-470MHz
1SV286
C20V
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Untitled
Abstract: No abstract text available
Text: TO SH IBA 1SV286 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 286 CATV CONVERTER 1'st OSC TUNING • • • High Capacitance Ratio : C2V / C20V - 8-9 TYP. Low Series Resistance : rs = 0.730 (TYP.) Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)
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1SV286
0014g
470MHz
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Untitled
Abstract: No abstract text available
Text: Technical Information ModSTACK 6MS2400R17KE3-3G-C20VTIN Vorläufige Daten preliminary data Key data 3x 800A rms at 400V rms, forced air fan not implemented General information Stacks for various inverter application. Semiconductors, heat sinks, capacitors, drivers and
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6MS2400R17KE3-3G-C20VTIN
3564E26.
1231423567896AB3C736DCEF32
4112BF3567896
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Untitled
Abstract: No abstract text available
Text: 1SV286 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 28 6 CATV CONVERTER 1'st OSC TUNING • • • High Capacitance Ratio : C2V / C20V - 8-9 TYP. Low Series Resistance : rs = 0.730 (TYP.) Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)
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1SV286
0014g
470MHz
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1SV258
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV258 C A T V CONVERTER 1st OSC T U N IN G . • • • High Capacitance Ratio : C2V/C20V = 8 Typ. Low Series Resistance : rs = 0.73U (Typ.) Useful for Small Size Tuner. M A X IM U M R ATINGS (Ta = 25°C)
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1SV258
C2V/C20V
C2V/C20V
1SV258
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marking T7
Abstract: No abstract text available
Text: Product specification 1SV230 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C2V/C20V = 8 Typ. Low Series Resistance: rs = 0.73 +0.1 2.6-0.1 1.0max (Typ.) 0.375 0.475 +0.05 0.1-0.02 Useful for small size Tuner.
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1SV230
OD-323
C2V/C20V
marking T7
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1SV286
Abstract: C20V
Text: TOSHIBA 1SV286 1 SV2 8 6 TOSHIBA VARIABLE CAPACITANCE DIODE CATV CONVERTER 1'st OSC TUNING SILICON EPITAXIAL PLANAR TYPE Unit in mm • High Capacitance Ratio : C2V / C20V = 8-9 TYP. • Low Series Resistance : rs = 0.730 (TYP.) • Useful for Small Size Tuner.
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1SV286
C2y/C20V
0014g
f-470MHz
C20V
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1-1G1A
Abstract: 1SV286 C20V
Text: TO SH IBA 1SV286 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 286 CATV CONVERTER 1'st OSC TUNING • High Capacitance Ratio : C2V / C20V - 8-9 TYP. • Low Series Resistance : rs = 0.730 (TYP.) • Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)
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1SV286
0014g
f-470MHz
-X100
1-1G1A
1SV286
C20V
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DIODE T7 marking
Abstract: smd diode marking T7 marking T7 T7 DIODE 1SV230
Text: Diodes SMD Type Silicon Epitaxial Planar Diode 1SV230 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C2V/C20V = 8 Typ. Low Series Resistance: rs = 0.73 +0.1 2.6-0.1 1.0max (Typ.) 0.375 0.475 +0.05
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1SV230
OD-323
C2V/C20V
DIODE T7 marking
smd diode marking T7
marking T7
T7 DIODE
1SV230
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Untitled
Abstract: No abstract text available
Text: 1SV286 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 8 6 Unit in mm CATV CONVERTER 1'st OSC TUNING • High Capacitance Ratio : C2V ! C20V = 8.9 TYP. • Low Series Resistance : rs = 0.730 (TYP.) • Useful for Small Size Tuner.
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1SV286
0014g
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1SV224
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR TYPE 1SV224 CATV CONVERTER 1st OSC TUNING. . High Capacitance Ratio : C2V/C20V=8 . Low Series Resistance : r s= 0 .7 3fl Typ . . Excellent C-V Characteristics, (Typ.) and Small Tracking Error. . Useful for Small Size Tuner. MAXIMUM R A T I N G S (Ta=25°C)
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1SV224
C2V/C20V
470MHz
1SV224
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1SV230
Abstract: C20V
Text: TOSHIBA 1SV230 1 S V2 3 0 TOSHIBA VARIABLE CAPACITANCE DIODE CATV CONVERTER 1st OSC TUNING. SILICON EPITAXIAL PLANAR TYPE • High Capacitance Ratio : C2V / C20V = Typ. • Low Series Resistance : rs = 0.730 (Typ.) • Useful for Small Size Tuner. + 0.2
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1SV230
1SV230
C20V
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C20V
Abstract: 1SV230
Text: 1SV230 TO SHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV230 Unit in mm CATV CONVERTER 1st OSC TUNING. • High Capacitance Ratio : C2V / C20V = Typ. • Low Series Resistance : rs = 0.730 (Typ.) • Useful for Small Size Tuner.
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1SV230
C20V
1SV230
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Untitled
Abstract: No abstract text available
Text: 1SV230 T O SH IB A TOSHIBA VARIABLE CAPACITANCE DIODE CATV CONVERTER 1st OSC TUNING. SILICON EPITAXIAL PLANAR TYPE 1 SV230 • High Capacitance Ratio : C2V ! C20V = 8 Typ. • Low Series Resistance : rs = 0.730 (Typ.) • Useful for Small Size Tuner. Unit in mm
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1SV230
SV230
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1SV230
Abstract: C20V
Text: 1SV230 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV230 Unit in mm CATV CONVERTER 1st OSC TUNING. • High Capacitance Ratio : C2V / C20V —8 Typ. • Low Series Resistance : rs = 0.730 (Typ.) • Useful for Small Size Tuner.
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1SV230
1SV230
C20V
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C20V
Abstract: PA1060 1SV286 25c251
Text: 1SV286 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 1SV286 ○ CATV コンバータ 1st OSC 同調用 単位: mm • 容量変化比が大きい。 : C2V/C20V = 8.9 標準 • 直列抵抗が小さい。 : rs = 0.73 Ω (標準)
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1SV286
C2V/C20V
C20V
PA1060
1SV286
25c251
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1SV102
Abstract: No abstract text available
Text: TOSHIBA 1S V 102 TOSHIBA VARIABLE CAPACITANCE DIODE 1S SILICON EPITAXIAL PLANAR TYPE 102 V AM RADIO BAND TUNING APPLICATIONS. U nit in mm 4.3 MAX. • High Capacitance Ratio : C2V ¡ C25V = 23 Typ. • High Q : Q = 400 (Typ.) • Sm all Package. Q S5M AX.
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1SV102
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV102 A M RADIO BAN D TUNING APPLICATIONS. • • • H igh C apacitance Ratio H igh Q Sm all Package. : C 2 y / C 2 5 V = 23 Typ. : Q = 400 (Typ.) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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1SV102
10//A
1SV102
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1SV102
Abstract: C20V C25V
Text: 1SV102 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 02 Unit in mm AM RADIO BAND TUNING APPLICATIONS 4.2MAX. • • • High Capacitance Ratio : C2V / C25V = 23 Typ. High Q : Q = 400 (Typ.) Small Package. 0.55MAX. S6'0
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1SV102
55max.
1SV102
C20V
C25V
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Untitled
Abstract: No abstract text available
Text: Technical Publication WESTCODE I I 1 ÌE I » V 'JTDT'ÎSS □DDSD17 4 • ■ TP202C Issue 1 November 1984 S E M IC O N D U C T O R S V ■■WESTCODE SEMICONDUCTORS . r~ 2 5 -/7 Inverter Grade Capsule Thyristor Type P202C 330 amperes average: up to 1200 volts VRRM/VDRM
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TP202C
P202C
T0-200AB
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1SV102
Abstract: C20V C25V
Text: TOSHIBA 1SV102 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 02 Unit in mm AM RADIO BAND TUNING APPLICATIONS. 4.3 MAX. • High Capacitance Ratio • High Q • Small Package. : C2V / C25V = 23 Typ. : Q = 400 (Typ.) CL55M AX. .
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1SV102
0L55MAX.
1SV102
C20V
C25V
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KS88C8016
Abstract: TAD 7265 data
Text: Electronics ô ~ B it C M O S M i c r o c o n t r o 1 1er Product Specification OVERVIEW The KS88C8016 single-chip 8-bit microcontroller is fabricated using a highly advanced CMOS process. Its fast and reliable CPU is based on Zilog's Super8 architecture. Important features include two 8-bit timer/ counters,
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KS88C8016
16-bit
20-bit
336-byte
16-Kbyte
TAD 7265 data
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