1SV102
Abstract: C20V C25V
Text: TOSHIBA 1SV102 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 02 Unit in mm AM RADIO BAND TUNING APPLICATIONS. 4.3 MAX. • High Capacitance Ratio • High Q • Small Package. : C2V / C25V = 23 Typ. : Q = 400 (Typ.) CL55M AX. .
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1SV102
0L55MAX.
1SV102
C20V
C25V
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C20V
Abstract: 1SV102 C25V
Text: 1SV102 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 02 Unit in mm AM RADIO BAND TUNING APPLICATIONS. 4.3 MAX. • • • High Capacitance Ratio : C 2V / C25V = 23 Typ. High Q : Q = 400 (Typ.) Small Package. CL55MAX. .
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1SV102
0L55MAX.
C20V
1SV102
C25V
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1SV101
Abstract: c9v diode
Text: TOSHIBA 1SV101 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 01 FM TUNER APPLICATIONS. Unit in mm 4.3 MAX. • • • • High Capacitance Ratio Low Series Resistance Small Package. Low Tuning Voltage Range ^3V / Cgy = 2.0~2.7 rs = 0.30 Typ.
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1SV101
0L55MAX.
50MHz
1SV101
c9v diode
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c9v diode
Abstract: 1SV101 288529
Text: 1SV101 TO SHIBA TOSHIBA VARIABLE CAPACITANCE DIODE FM TUNER APPLICATIONS. SILICON EPITAXIAL PLANAR TYPE 1 S V 1 01 Unit in mm 4.3 MAX. • • • • High Capacitance Ratio Low Series Resistance Small Package. Low Tuning Voltage Range C 2 v /C 9 v = 2.0~2.7
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1SV101
0L55MAX.
50MHz
c9v diode
1SV101
288529
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