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    TOSHIBA IGBT MG50 Search Results

    TOSHIBA IGBT MG50 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA IGBT MG50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MG50Q1BS11

    Abstract: TOSHIBA IGBT IC 7800 MG50Q1BS1 toshiba 7800 MG50Q1BS11 equivalent
    Text: MG50Q1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG50Q1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C


    Original     		PDF MG50Q1BS11 2-33D2A MG50Q1BS11 TOSHIBA IGBT IC 7800 MG50Q1BS1 toshiba 7800 MG50Q1BS11 equivalent

    MG50J1BS11

    Abstract: No abstract text available
    Text: MG50J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG50J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C


    Original     		PDF MG50J1BS11 2-33F2A MG50J1BS11

    MG50J1BS11

    Abstract: No abstract text available
    Text: MG50J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG50J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C


    Original     		PDF MG50J1BS11 2-33F2A MG50J1BS11

    MG50Q1BS11

    Abstract: TOSHIBA IGBT
    Text: MG50Q1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG50Q1BS11 High Power Switching Applications Motor Control Applications l Enhancement-mode l The electrodes are isolated from case. Unit: mm Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C


    Original     		PDF MG50Q1BS11 2-33D2A MG50Q1BS11 TOSHIBA IGBT

    PC 181 OPTO

    Abstract: MG50N2YS1 16175 MU51
    Text: TD TOSHIBA {DISCRETE/OPTO]- D e J IìGci72S0 DDlbl74 0 | 9097250 TOSHIBA <DISCRETE/OPTO TOSHIBA 90D 16174 SEMICONDUCTOR D TOSHIBA GTR MODULE MG50N2YS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm


    OCR Scan     		PDF ciGci72S0 DDlbl74 MG50N2YS1 EGA-MG50N2YS1-4 DT-33 MG50N2YS1 EGA-MG50N2YS1- PC 181 OPTO 16175 MU51

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DI SC RE TE /OPT O} * • dF 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR I t o ^tssd 90D 16129 auibiai D t 7"-33~/3 TOSHIBA GTR MODULE MG50H1BS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF MG50H1BS1 50HIBS1-A

    toshiba mg50q2ys50

    Abstract: MG50Q2YS50 tip 31 power transistor motor dc MG50Q2Y
    Text: TOSHIBA MG50Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.) Enhancement-Mode


    OCR Scan     		PDF MG50Q2YS50 2-94D4A toshiba mg50q2ys50 MG50Q2YS50 tip 31 power transistor motor dc MG50Q2Y

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG50Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG50Q6ES51A

    ksh 200 TRANSISTOR equivalent

    Abstract: MG50Q6ES51 G50Q6ES51
    Text: TOSHIBA MG50Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 50 Q6ES51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG50Q6ES51 G50Q6ES51 2-108E1A 961001EAA1 ksh 200 TRANSISTOR equivalent MG50Q6ES51 G50Q6ES51

    MG50Q6ES50

    Abstract: P channel 600v 50a IGBT vqe 71
    Text: TOSHIBA MG50Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 50 Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG50Q6ES50 2-108E1A 961001EAA1 10//s MG50Q6ES50 P channel 600v 50a IGBT vqe 71

    MG50Q6ES40

    Abstract: g50q6es40
    Text: TOSHIBA MG50Q6ES40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES40 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage


    OCR Scan     		PDF MG50Q6ES40 G50Q6ES40 2-94B1A 961001EAA2 MG50Q6ES40 g50q6es40

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG50Q6ES51 MG50Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG50Q6ES51

    MG50Q1ZS50

    Abstract: No abstract text available
    Text: TOSHIBA MG50Q1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q1 ZS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf = 0.3 /us Max. @Induetive Load Low Saturation Voltage • VCE (sat) = 3-6 v (Max.)


    OCR Scan     		PDF MG50Q1ZS50 MG50Q1 2-94D7A MG50Q1ZS50

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA -CDISCRETE/OPTOï TO 9097250 TOSHIBA DISCRETE/OPTO TO SH IB A D E OOlblïG 3 90D 16170 SEMICONDUCTOR TOSHIBA GTR MODULE MG50N1BS1 TECHNICAL DATA SILICON N CHANNEL IGBT H I G H POWER SWIT C H I N G APPLICATIONS. M O T O R CONTROL APPLICATIONS. FEATURES:


    OCR Scan     		PDF MG50N1BS1 EGA-MG50N1BS1â

    IRF 24N

    Abstract: MG50Q2YS50A 294D
    Text: TOSHIBA MG50Q2YS50A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load • Low Saturation Voltage : v CE(sat) = 3-e v (Max.)


    OCR Scan     		PDF MG50Q2YS50A 2-94D4A 961001EAA1 10//s IRF 24N MG50Q2YS50A 294D

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG500Q1US1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG500Q1U S1 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.5/^s Max. trr = 0.5/*s (Max.) Low Saturation Voltage : VcE(sat) = 4-°V(Max.)


    OCR Scan     		PDF MG500Q1US1 MG500Q1U M6G500Q1US1

    MG50Q2YS40

    Abstract: No abstract text available
    Text: TOSHIBA MG50Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. B2 • • • • • • High Input Impedance High Speed : tf= 0.5/^s Max. trr = 0.5^8 (Max.) Low Saturation Voltage


    OCR Scan     		PDF MG50Q2YS40 2-94D1A MG50Q2YS40

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE MG50Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 50 Q 6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf= 0 .3 /iS Max. Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG50Q6ES50 6ES50 961001EAA1

    MG50J2YS50

    Abstract: transistor te 2305 mg50j V20-H IGBT MG50J2YS50
    Text: TOSHIBA MG50J2YS50 MG50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4-FA ST -O N -TA B # 110 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


    OCR Scan     		PDF MG50J2YS50 2-94D1A MG50J2YS50 transistor te 2305 mg50j V20-H IGBT MG50J2YS50

    Untitled

    Abstract: No abstract text available
    Text: MG50J1ZS40 TOSHIBA TOSHIBA GTR MODULE M r ; ^ n SILICON N CHANNEL IGBT 1 1 7 < ; z i n HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed ; tf—0.35/^s Max. trr = 0.15^8 (Max.) • Low Saturation Voltage


    OCR Scan     		PDF MG50J1ZS40

    mg50j2ys40

    Abstract: IGBT MG50J2YS40 TOSHIBA IGBT mg50 toshiba MG50 YS40 2YS40 ALY TRANSISTOR MG50 pmp 4000 transistor ALY
    Text: TOSHIBA GTR MODULE SEMICONDUCTOR TOSHIBA TECHNICAL M G 50J 2YS40 DATA SILICON N CHANNEL IGBT MG50J2YS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • l!X 3 - M5 High Input Impedance Highspeed : tf—0.35//S(Max.)


    OCR Scan     		PDF 2YS40 MG50J2YS40) 35//S 2-94D1A MG50J2YS40 MG50J2YS40 2VS40) IGBT MG50J2YS40 TOSHIBA IGBT mg50 toshiba MG50 YS40 2YS40 ALY TRANSISTOR MG50 pmp 4000 transistor ALY

    Untitled

    Abstract: No abstract text available
    Text: MG50Q1BS11 TOSHIBA M G 5 0 Q 1 BS 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance HighSpeed : tf=1.0,«s Max. Low Saturation Voltage : VQE(sat) = 2.7V (Max.) Enhancement-Mode


    OCR Scan     		PDF MG50Q1BS11

    Untitled

    Abstract: No abstract text available
    Text: MG50Q1BS11 TOSHIBA MG 5 0 Q 1 BS 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance HighSpeed : tf=1.0,«s Max. Low Saturation Voltage : VQE(sat) = 2.7V (Max.) Enhancement-Mode


    OCR Scan     		PDF MG50Q1BS11 120oltage.

    ksh 200 TRANSISTOR equivalent

    Abstract: MG50Q6ES51 MG50Q6ES51A KSH 200 TRANSISTOR
    Text: TOSHIBA MG50Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 5 0 Q 6 ES51 A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG50Q6ES51A MG50Q6ES51 2-108E2A 961001EAA1 ksh 200 TRANSISTOR equivalent MG50Q6ES51A KSH 200 TRANSISTOR