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    TOSHIBA CODE IGBT Search Results

    TOSHIBA CODE IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA CODE IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    F2B transistor

    Abstract: 3p transistor transistor TO-3P Outline Dimensions transistor 975 transistor 545
    Text: Transistor Outline Package TO-3P LH Package Outline Dimensions Outline Dimensions Unit: mm 20.5 max 1.0 +0.3 –0.25 26.0 ±0.5 2.0 1.5 3.0 20.0 ±0.6 2.5 2.5 1.5 11.0 2.0 4.0 6.0 φ3.3 ±0.2 1 (Bottom view) Toshiba package name Toshiba package code Notes


    Original     		PDF 21F2A 21F2B 21F2C F2B transistor 3p transistor transistor TO-3P Outline Dimensions transistor 975 transistor 545

    TO-3P Jedec package outline

    Abstract: 3p transistor transistor outline package 3
    Text: Transistor Outline Package TO-3P W Package Outline Dimensions Outline Dimensions Unit: mm 0.8 +0.2 –0.1 15.5 ±0.3 A 20.0 ±0.3 3.0 max 4.5 φ3.2 ±0.2 A 1.0 +0.3 –0.25 5.45 1 2 3 3 0.8 +0.3 –0.1 5.45 1 (Bottom view) Toshiba package name Toshiba package code


    Original     		PDF 16K1A TO-3P Jedec package outline 3p transistor transistor outline package 3

    transistor TO-3P Outline Dimensions

    Abstract: TRANSISTOR 545 3p transistor TO-3P Jedec package outline TOSHIBA IGBT DATA BOOK
    Text: Transistor Outline Package TO-3P L Package Outline Dimensions Outline Dimensions Unit: mm 20.5 max 26.0 ±0.5 11.0 2.0 4.0 6.0 φ3.3 ±0.2 3.0 1.0 +0.3 –0.25 20.0 ±0.6 2.5 2.5 3 1 (Bottom view) Toshiba package name Toshiba package code Notes • The above diagrams may not be actual sizes. Diagrams may be enlarged,


    Original     		PDF 21F1A 21F1B 21F1C transistor TO-3P Outline Dimensions TRANSISTOR 545 3p transistor TO-3P Jedec package outline TOSHIBA IGBT DATA BOOK

    Untitled

    Abstract: No abstract text available
    Text: Deca Power Device Package Straight Lead DP Package Outline Dimensions Outline Dimensions Unit: mm 1.7 ±0.2 6.8 max 0.6 max 5.5 ±0.2 5.2 ±0.2 0.95 max 12.0 min 0.6 ±0.15 3 2.3 2.3 3 1 (Bottom view) Toshiba package name Toshiba package code Notes • The above diagrams may not be actual sizes. Diagrams may be enlarged,


    Original     		PDF

    TOSHIBA IGBT DATA BOOK

    Abstract: TO-220AB transistor package 10P1A
    Text: Transistor Outline Package TO-220AB Package Outline Dimensions Outline Dimensions Unit: mm 1.32 15.7 max 3.0 φ3.6 ±0.2 6.7 max 10.3 max 2.5 max 12.6 min 1.6 max 0.76 3 2 3 0.5 1 Bottom view Toshiba package name Toshiba package code Notes • The above diagrams may not be actual sizes. Diagrams may be enlarged,


    Original     		PDF O-220AB 220AB 10P1A 10P1B 10P1C TOSHIBA IGBT DATA BOOK TO-220AB transistor package 10P1A

    Untitled

    Abstract: No abstract text available
    Text: GT8G151 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 Strobe Flash Applications Unit: mm • Enhancement-mode • Peak collector current: IC = 150 A max TSON-8 • Compact and Thin (TSON-8) package Rating Unit VCES 400 V DC VGES


    Original     		PDF GT8G151

    Untitled

    Abstract: No abstract text available
    Text: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Tc=70℃(max) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF GT8G136

    Untitled

    Abstract: No abstract text available
    Text: GT5G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G133 Strobe Flash Applications Unit: mm • Enhancement-mode • Low gate drive voltage: VGE = 2.5 V min (@IC = 130 A) • Peak collector current: IC = 130 A (max) • Compact and Thin (TSON-8) package


    Original     		PDF GT5G133

    8G151

    Abstract: GT8G151
    Text: GT8G151 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 Strobe Flash Applications Unit: mm • Enhancement-mode VGE = 2.5 V min. (@IC = 150 A) • Peak collector current: IC = 150 A (max) TSON-8 8 0.2 0.65±0.05 Rating Unit VCES


    Original     		PDF GT8G151 8G151 GT8G151

    ic MARKING QG

    Abstract: 5G133
    Text: GT5G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G133 Strobe Flash Applications Unit: mm • Enhancement-mode • Low gate drive voltage: VGE = 2.5 V min (@IC = 130 A) • Peak collector current: IC = 130 A (max) • Compact and Thin (TSON-8) package


    Original     		PDF GT5G133 ic MARKING QG 5G133

    8g136

    Abstract: toshiba week code marking
    Text: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Tc=70℃(max) Maximum Ratings (Ta = 25°C)


    Original     		PDF GT8G136 dissipationt10 8g136 toshiba week code marking

    Untitled

    Abstract: No abstract text available
    Text: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) Unit: mm (@VGE=3.0V(min),Ta=70℃(max)/ Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF GT8G136

    10g131

    Abstract: ic MARKING QG GT10G131 TOSHIBA IGBT DATA BOOK NOR GATE IC A3170
    Text: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Unit: mm Strobe Flash Applications • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode


    Original     		PDF GT10G131 10g131 ic MARKING QG GT10G131 TOSHIBA IGBT DATA BOOK NOR GATE IC A3170

    igbt transistor

    Abstract: 8g133
    Text: GT8G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G133 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) • Peak collector current: IC = 150 A (max)


    Original     		PDF GT8G133 dissipationt10 igbt transistor 8g133

    GT10G131

    Abstract: 10G131
    Text: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode


    Original     		PDF GT10G131 GT10G131 10G131

    GT8G136

    Abstract: 8g136
    Text: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) Unit: mm (@VGE=3.0V(min),Ta=70℃(max)/ Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF GT8G136 dissipationt10 GT8G136 8g136

    Untitled

    Abstract: No abstract text available
    Text: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed. : tf = 0.30µs Max. Low saturation voltage. : VCE(sat) = 2.7V (Max.)


    Original     		PDF GT50J102 2-21F2C

    Untitled

    Abstract: No abstract text available
    Text: GT10J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J311 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. Low saturation voltage : VCE (sat) = 2.7V (Max.)


    Original     		PDF GT10J311 2-16H1A

    GT30J322

    Abstract: IGBT Guide TOSHIBA IGBT DATA BOOK
    Text: GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 Unit: mm FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD included between emitter and collector Enhancement mode type High speed : tf = 0.25µs Typ. (IC = 50A)


    Original     		PDF GT30J322 GT30J322 IGBT Guide TOSHIBA IGBT DATA BOOK

    45f123

    Abstract: GT45F123 transistor 45f123 GT45F12 GT45 TCA160 45F12 gt45f
    Text: GT45F123 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT45F123 For PDP-TV Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • Low input capacitance: Cies = 2700pF (typ.) • Peak collector current: ICP = 200 A (max)


    Original     		PDF GT45F123 2700pF O-220SIS 45f123 GT45F123 transistor 45f123 GT45F12 GT45 TCA160 45F12 gt45f

    8g133

    Abstract: GT8G133 IGBT GT8G133
    Text: GT8G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G133 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) • Peak collector current: IC = 150 A (max)


    Original     		PDF GT8G133 dissipationt10 8g133 GT8G133 IGBT GT8G133

    8G133

    Abstract: GT8G133 TOSHIBA IGBT DATA BOOK NOR GATE IC toshiba lead free mark
    Text: GT8G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G133 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) • Peak collector current: IC = 150 A (max)


    Original     		PDF GT8G133 dissipationt10 8G133 GT8G133 TOSHIBA IGBT DATA BOOK NOR GATE IC toshiba lead free mark

    Untitled

    Abstract: No abstract text available
    Text: GT20J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J311 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. Low saturation voltage : VCE (sat) = 2.7V (Max.)


    Original     		PDF GT20J311 2-16H1A

    GT20J301

    Abstract: toshiba code igbt
    Text: GT20J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. Low saturation voltage : VCE (sat) = 2.7V (Max.)


    Original     		PDF GT20J301 2-16C1C GT20J301 toshiba code igbt