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    45f123

    Abstract: GT45F123 transistor 45f123 GT45F12 GT45 TCA160 45F12 gt45f
    Text: 45F123 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 45F123 For PDP-TV Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • Low input capacitance: Cies = 2700pF (typ.) • Peak collector current: ICP = 200 A (max)


    Original     		GT45F123 2700pF O-220SIS 45f123 GT45F123 transistor 45f123 GT45F12 GT45 TCA160 45F12 gt45f PDF

    c41dc

    Abstract: 311C1 BA4916 9117-33
    Text: 1 1 1 1 1 1 1 C1 1 1 1D4DA5541


    Original     		234566785341978A4BCAD33561CEFF D47E3 1CE34 1213456789AB1 A5541 BC9641DEFF 7F515E88 c41dc 311C1 BA4916 9117-33 PDF