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    GT45 Search Results

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    GT45 Price and Stock

    Advanced Thermal Solutions Inc MGT450

    TOOL FOR MAXI GRIP 45X45
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    DigiKey MGT450 Bulk 10 10
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    Richardson RFPD MGT450 1
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    Sager MGT450 1
    • 1 $90.66
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    Vishay Semiconductors FES16GT-45

    DIODE GEN PURP 400V 16A TO220AC
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    IXYS Corporation IXGT45N120

    IGBT 1200V 75A TO268AA
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    Microchip Technology Inc APTGT450SK60G

    IGBT MODULE 600V 550A 1750W SP6
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    DigiKey APTGT450SK60G Bulk 6
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    Mouser Electronics APTGT450SK60G
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    Newark APTGT450SK60G Bulk 6
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    Microchip Technology Inc APTGT450SK60G
    • 1 $206.87
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    NAC APTGT450SK60G Tube 2
    • 1 $168.87
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    Avnet Silica APTGT450SK60G 29 Weeks 6
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    EBV Elektronik APTGT450SK60G 28 Weeks 6
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    JRH Electronics DW-36-09-G-T-450

    CONN HDR 108POS 0.1 STACK T/H
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    DigiKey DW-36-09-G-T-450 Bulk 1
    • 1 $26.64
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    Find more GT45 price and stock on Findchips.com

    GT45 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GT45 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    GT45 Unknown Vintage Transistor Datasheets Scan PDF
    GT45 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    GT45 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GT45F131

    Abstract: TCA160 45F131 gt45f GT45
    Text: GT45F131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT45F131 For PDP-TV Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • Low VCE (sat) = 1.7 V typ. (Test Condition: IC = 120 A,VGE = 15 V)


    Original     		PDF GT45F131 O-220SM GT45F131 TCA160 45F131 gt45f GT45

    45f123

    Abstract: GT45F123 transistor 45f123 GT45F12 GT45 TCA160 45F12 gt45f
    Text: GT45F123 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT45F123 For PDP-TV Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • Low input capacitance: Cies = 2700pF (typ.) • Peak collector current: ICP = 200 A (max)


    Original     		PDF GT45F123 2700pF O-220SIS 45f123 GT45F123 transistor 45f123 GT45F12 GT45 TCA160 45F12 gt45f

    GT45G131

    Abstract: gt45g TCA160 45G131 GT45
    Text: GT45G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT45G131 For PDP-TV Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • Low VCE (sat) = 1.9 V typ. (Test Condition: IC = 120 A,VGE = 15 V )


    Original     		PDF GT45G131 O-220SM GT45G131 gt45g TCA160 45G131 GT45

    GT30J124

    Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
    Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.


    Original     		PDF BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123

    GT30F124

    Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
    Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		PDF BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    GP415

    Abstract: GR451 GE-330 GP312 GS233 GP580 GE-220 GE010 gp339 GT330
    Text: General Purpose Disc Ceramic Capacitors Capacity pF Tol Temp Coef D Size Inches T S { General Purpose { Ideal For Use in Non-critical Coupling, Bypass and Filter Applications { Conformally Coated { Radial Leads d Size (Millimeters) D T S d Catalog Number


    Original     		PDF -30gC GT510 GT515 GT520 GT530 GT540 GT550 GT560 GT570 GT580 GP415 GR451 GE-330 GP312 GS233 GP580 GE-220 GE010 gp339 GT330

    GT45

    Abstract: No abstract text available
    Text: CSM-360 Product Datasheet CSM-360 LEDs Features: • Extremely high optical output: Over 6,000 lumens from a single package white Table of Contents Technology Overview. . . . . . 2 Test Specifications . . . . . . . . . 2 White Binning Structure. . . . 3


    Original     		PDF CSM-360 PDS-001353Rev GT45

    GT316

    Abstract: GP312 GP415 GP318 GR475 GS-33 GP36 GP433 GP422 SL 100
    Text: General Purpose Disc Ceramic Capacitors Capacity pF Tol Temp Coef D Size Inches T S { General Purpose { Ideal For Use in Non-critical Coupling, Bypass and Filter Applications { Conformally Coated { Radial Leads d Size (Millimeters) D T S d Catalog Number


    Original     		PDF -30gC GT510 GT515 GT520 GT530 GT540 GT550 GT560 GT570 GT580 GT316 GP312 GP415 GP318 GR475 GS-33 GP36 GP433 GP422 SL 100

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    SJV50

    Abstract: wpce773 G9091-330T11U-GP winbond WPCE773 G7922R61U N10M-GE1 WISTRON power sequence M08B1 DT2 UMA isl88731
    Text: 5 D 4 3 2 1 SYSTEM DC/DC Project code: 91.4BU01.001 PCB P/N : 48.4BU01.0SB REVISION : 08244-SB SJV50 Block Diagram CLK GEN. ISL62392 INPUTS 41 OUTPUTS 5V_S5 6A DCBATOUT 3D3V_S5(7A) 5V_AUX_S5 3D3V_AUX_S5 GMT Mobile CPU G7922R61U Penryn ICS9LPRS365B 33 3 VRAM


    Original     		PDF SJV50 ICS9LPRS365B 4BU01 08244-SB ISL62392 G7922R61U TPS51124 512MB 667/800/1066MHz wpce773 G9091-330T11U-GP winbond WPCE773 G7922R61U N10M-GE1 WISTRON power sequence M08B1 DT2 UMA isl88731

    Untitled

    Abstract: No abstract text available
    Text: CSM-360 Product Datasheet CSM-360 LEDs Features: • Extremely high optical output: Over 6,000 lumens from a single package white Table of Contents Technology Overview . . . . . .2 Test Speciications . . . . . . . . .2 • Extremely high eiciency: Over 100 lumens per watt at 3.15A


    Original     		PDF CSM-360 PDS-001353Rev

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    converter satelite

    Abstract: DMX LIGHTING CONSOLE and CONVERTER cables IEC61754-7 IEC-61754-7 PLC Communication cables photo HDMI male socket rs232 converter dmx military connector LC NO12MBB6D-A
    Text: opticalCON A a a OR NIT O erM TOR w NI po O rM we o p O INF T SE O INF T SE b B A b B Content PAGE Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Design Criteria . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF

    AF306

    Abstract: 2n2654 AF178 Low-Power Germanium PNP AF186 2N3283 2N2672 2N77 GG10M 2N2929
    Text: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 2N1524 2N1426 2N1426 2N1526 2N1527 AF147 AF150 AF148 AF200 2N77 ~~Jg~ 15 20 AF306 2S8188 2N612 2N59 2N60 2N61 2N613 2N1561 ~~~~~~ 25 30 35 40 2N1692 2N1693 2N672 2N673 2N402 2N403 2N700 2N700A 2N3283 2N3284


    Original     		PDF 2N1524 2N1426 2N1526 2N1527 AF147 AF150 AF148 AF200 AF306 2n2654 AF178 Low-Power Germanium PNP AF186 2N3283 2N2672 2N77 GG10M 2N2929

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan     		PDF

    gt58

    Abstract: No abstract text available
    Text: General Purpose Disc Ceramic Capacitors • General Purpose Ideal For Use in Non-critical Coupling, Bypass and Filter Applications Conformally Coated Radial Leads MallorY GENERAL SPECIFICATIONS Temperature Range: -30°C to +85°C Voltage Range: 50, 100, 500,


    OCR Scan     		PDF GT510 GT515 GT520 GT530 GT540 GT550 GT560 GT570 GT580 GT590 gt58

    GT482

    Abstract: GR418 GR315 GT416
    Text: I General Purpose MallorY Disc Ceramic Capacitors G eneral Purpose Ideal For Use in Non-critical Coupling, Bypass and Filter Applications Conform ally Coated Radial Leads GENERAL SPECIFICATIONS Tem perature Range: -30°C to +85°C Insulation Resistance: 10,000 m egohm s min


    OCR Scan     		PDF GT510 GT515 GT520 GT530 GT540 GT550 GT560 GT570 GT580 GT590 GT482 GR418 GR315 GT416

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


    OCR Scan     		PDF

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


    OCR Scan     		PDF

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


    OCR Scan     		PDF

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp