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    TOSHIBA 2S Search Results

    TOSHIBA 2S Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA 2S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    PDF 2SK2854

    Untitled

    Abstract: No abstract text available
    Text: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    PDF 2SK2854

    Untitled

    Abstract: No abstract text available
    Text: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    PDF 2SK2855

    Untitled

    Abstract: No abstract text available
    Text: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    PDF 2SK2854

    Untitled

    Abstract: No abstract text available
    Text: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    PDF 2SK2855

    Power MOSFET, toshiba

    Abstract: 2SK3074 HIGH POWER MOSFET TOSHIBA toshiba marking code transistor
    Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    PDF 2SK3074 630mW Power MOSFET, toshiba 2SK3074 HIGH POWER MOSFET TOSHIBA toshiba marking code transistor

    Untitled

    Abstract: No abstract text available
    Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    PDF 2SK3074 630mW

    Untitled

    Abstract: No abstract text available
    Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    PDF 2SK3074 630mW

    2SK2056

    Abstract: 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
    Text: TOSHIBA TOSHIBA POWER MOSFETs 1Q, 1999 Alphanumerically Toshiba Power MOSFET List Alphanumerically Part VDSS RDS ON Number (V) (Ω) ID (A) Package Generation Status 2SJ147 -60 0.2 -12 TO-220IS π -MOSII Non-Promotion 2SJ183 -60 0.35 -5 POWER MOLD L - π -MOSIII


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    PDF 2SJ147 O-220IS 2SJ183 2SJ200 2SJ201 2SJ224 O-220FL/SM 2SJ238 2SJ239 2SJ240 2SK2056 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402

    TOSHIBA NOTE

    Abstract: 2SK3074
    Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    PDF 2SK3074 630mW TOSHIBA NOTE 2SK3074

    Untitled

    Abstract: No abstract text available
    Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    PDF 2SK3074 630mW

    2SK3756

    Abstract: No abstract text available
    Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other


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    PDF 2SK3756 32dBmW 2SK3756

    2SK3756

    Abstract: MARKING CODE c5 sc-62
    Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other


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    PDF 2SK3756 32dBmW 2SK3756 MARKING CODE c5 sc-62

    Untitled

    Abstract: No abstract text available
    Text: 2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other


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    PDF 2SK3475

    Untitled

    Abstract: No abstract text available
    Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other


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    PDF 2SK3756 32dBmW

    Untitled

    Abstract: No abstract text available
    Text: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use


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    PDF 2SK2854

    TOSHIBA Semiconductor Reliability Handbook

    Abstract: 2SK2854
    Text: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use


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    PDF 2SK2854 TOSHIBA Semiconductor Reliability Handbook 2SK2854

    Untitled

    Abstract: No abstract text available
    Text: 2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS GSM (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use.


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    PDF 2SK3077

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DI SC RE TE/ OPTO } ‘n DE 1 ^ 7 5 5 1 ] 99D 16659 9097250 TOSHIBA <DISCRETE/OPTO ¿/oih'ilu DDltbSi a f i - n - s TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2SK38 5 SILICON N CHANNEL MOS TYPE (7T-M0S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS


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    PDF 2SK38 100nA

    TC571000

    Abstract: TMP86PM29A IC Data-book cm29a 86CM29
    Text: TOSHIBA ‘01-09-04 TOSHIBA Original CMOS 8-bit Microcontroller TLCS-870/C Series TMP86C829A, TMP86CH29A , TMP86CM29A TMP86PM29A Databook 3rd Edition TOSHIBA CORPORATION TOSHIBA TMP86C829A/H29A/M29A CMOS 8-Bit M icrocontroller TMP86C829AU/AF, TMP86CH29AU/AF, TMP86CM29AU/AF


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    PDF TLCS-870/C TMP86C829A, TMP86CH29A TMP86CM29A TMP86PM29A P86C829A/H P86C829AU/AF, TMP86CH29AU/AF, TMP86CM29AU/AF TMP86C829A/H29A/M29A TC571000 TMP86PM29A IC Data-book cm29a 86CM29

    STF 410 B 2 A

    Abstract: 16698
    Text: TOSHIBA -CDISCRETE/OPTOJ Ti 9097250 TOSHIBA <DISCRETE/OPTO> ¿ ÿ o s h ih t DE I t DTTBSO ODlbbTö 99D 16698 SEMICONDUCTOR DTSS-oq TOSHIBA FIELD EFFECT TRANSISTOR 2SK529 SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-MOS INDUSTRIAL APPLICATIONS Unit in mm


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    PDF 100nA T0-220 STF 410 B 2 A 16698

    A45A

    Abstract: SO402 2SK386 j2f3 16664
    Text: TOSHIBA -CDISCRETE/OPTOJ- ‘H 9097250 TOSHIBA <DISCRETE/OPTO> DE 99D SEMICONDUCTOR I SOTTESO OOlbbba 2 16662 DT_3CH3 TOSHIBA FIELD EFFECT TRANSISTOR 2SK386 SILICON N CHANNEL MOS TYPE TECHNICAL DATA <7T — M O S INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.


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    PDF 100nA A45A SO402 2SK386 j2f3 16664

    Untitled

    Abstract: No abstract text available
    Text: DiT| SOTTESO GDltESl 3 TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR 90D 16251 D 7 -3 3 - 3 5 TOSHIBA GTR MODULE MG75H6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


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    PDF MG75H6EL1 Ic-75A) Icm75A) MG75H6EL1-1 MG75H6EL1-4 MG150Q2YK1 MG200Q1UK1 MG75Q2YK1 MG50Q2YK1 10Sec.

    2SK44

    Abstract: 2SK4 024N 2sk447 Field Effect Transistor Silicon N Channel MOS vdss 600
    Text: TOSHIBA {DISCRETE /OPT O} t 9097250 TOSHIBA CDISCRETE/OPTO í d e | tottesd 99D 16683 GGittaa □ D T 13 ? -/•3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2S K 44 7 SILICON N CHANNEL MOS TYPE < 7T - M O S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in ran


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