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Toshiba America Electronic Components 2SK3074(TE12L.F) Transistor RF FET N-CH 30V 1A 520MHz 3-Pin PW-Mini - Tape and Reel (Alt: 2SK3074(TE12L,F))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2SK3074(TE12L.F)	Reel		12 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	2SK3074(TE12L.F)			24 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SK3074 Datasheets (5)

Part	Manufacturer	Description	Type	PDF
2SK3074	Toshiba	Silicon N-channel MOS type field effect transistor for RF power MOSFET, for UHF and VHF band power amplifier	Original	PDF
2SK3074	Toshiba	2SK3074 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SC-62, 2-5K1D, 3 PIN, FET RF Power	Original	PDF
2SK3074	Toshiba	Field Effect Transistor Silicon N Channel MOS Type	Scan	PDF
2SK3074TE12LF	Toshiba	RF FETs, Discrete Semiconductor Products, MOSF RF N CH 30V 1A PW-MINI	Original	PDF
2SK3074(TE12L,F)	Toshiba	2SK3074 - Trans MOSFET N-CH 30V 1A 4-Pin(3+Tab) PW-Mini T/R	Original	PDF

2SK3074 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA	Original	PDF	2SK3074 630mW
2SK3074 Abstract: all mosfet vhf power amplifier transistor marking zg Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Output Power : PO ≥ 630mW Power Gain : GP ≥ 14.9dB Drain Efficiency : ηD ≥ 45% Unit in mm MAXIMUM RATINGS Ta = 25°C	Original	PDF	2SK3074 630mW SC-62 000707EAA1 520MHz, 2SK3074 all mosfet vhf power amplifier transistor marking zg
Untitled Abstract: No abstract text available Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Output Power : PO ≥ 630mW Power Gain : GP ≥ 14.9dB Drain Efficiency : ηD ≥ 45% Unit in mm MAXIMUM RATINGS Ta = 25°C	Original	PDF	2SK3074 630mW SC-62
TOSHIBA NOTE Abstract: 2SK3074 Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA	Original	PDF	2SK3074 630mW TOSHIBA NOTE 2SK3074
Untitled Abstract: No abstract text available Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA	Original	PDF	2SK3074 630mW
2SK3074 Abstract: 45150 gp149 GP14 NO1A Text: 2SK3074 東芝電界効果トランジスタシリコンNチャネルMOS形 2SK3074 ○ VHF/UHF 帯電力増幅用ご注意本資料に掲載されている製品は通信機器向高周波電力増幅用に使用されることを意図しています。他の用途に	Original	PDF	2SK3074 PO630mW 520MHz, 20070701-JA 2SK3074 45150 gp149 GP14 NO1A
Untitled Abstract: No abstract text available Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA	Original	PDF	2SK3074 630mW
Power MOSFET, toshiba Abstract: 2SK3074 HIGH POWER MOSFET TOSHIBA toshiba marking code transistor Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA	Original	PDF	2SK3074 630mW Power MOSFET, toshiba 2SK3074 HIGH POWER MOSFET TOSHIBA toshiba marking code transistor
2SK3074 Abstract: No abstract text available Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER l Output Power : PO ≥ 630mW l Power Gain : GP ≥ 14.9dB l Drain Efficiency : ηD ≥ 45% Unit in mm MAXIMUM RATINGS Ta = 25°C	Original	PDF	2SK3074 630mW SC-62 2SK3074
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	PDF	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
TA4029CTC Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X Text: 製品カタログ 2011-1 東芝半導体製品カタログ高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8	Original	PDF	BCJ0003G BCJ0003F TA4029CTC TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	PDF	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
RFM70U12D Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919 Text: 東芝半導体製品総覧表 2009 年 7 月版高周波デバイス高周波バイポーラ小信号トランジスタ高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ高周波ダイオード小信号 MMIC 高周波セルパック	Original	PDF	SCJ0004N 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5094 2SC5106 RFM70U12D 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
JDV2S31CT Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000 Text: 製品カタログ 2009-9 東芝半導体製品カタログ高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。	Original	PDF	BCJ0003F BCJ0003E JDV2S31CT 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000

3sk catalog Abstract: TE85L Toshiba Text: Semiconductor Catalog 2012-1 Radio-Frequency Semiconductors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Recommended Products by Application . 3 to 7 1.1 Cell Phones 1.2 TV Tuners 1.3 Low-Power Radios FRS/GMRS	Original	PDF	BCE0003H 3sk catalog TE85L Toshiba
sec 2sc5088 Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and	Original	PDF	BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
MT4S300T Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476 Text: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones	Original	PDF	BCE0003F MT4S300T TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
MT4S300T Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors	Original	PDF	2010/9SCE0004K 2SC1923 MT4S300T TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	PDF	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	PDF	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
MT3S111P Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293 Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287	Original	PDF	2SC941TM 2SC3136 TIM7179-45SL TIM7179-60SL TIM7785-4SL TIM7785-4UL TIM7785-6UL TIM7785-8SL TIM7785-8UL TIM7785-12UL MT3S111P 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
Untitled Abstract: No abstract text available Text: TO SHIBA 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE d Unit in mm RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER 1.6MAX. 4.6MAX. 0.4 +0.05 • • • Output Power Power Gain Drain Efficiency PO^630mW GP^ 14.9dB V j = 45%	OCR Scan	PDF	2SK3074 630mW 2200pF 2200pF
2SK3074 Abstract: No abstract text available Text: TO SHIBA 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER • • • Output Power Power Gain Drain Efficiency P q = 630mW Gp^ 14.9dB 7j ^45 % M A X IM U M RATINGS Ta = 25°C)	OCR Scan	PDF	2SK3074 630mW 2200pF 520MHz 2SK3074
Untitled Abstract: No abstract text available Text: T O SH IB A 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER • • • Output Power Power Gain Drain Efficiency PO=630m W G p^ 14.9dB 7d ^45 % MAXIMUM RATINGS Ta = 25°C SYMBOL RATING	OCR Scan	PDF	2SK3074 961001EAA1 2200pF 2200pF

2SK3074 Search Results

2SK3074 Price and Stock

Toshiba America Electronic Components 2SK3074(TE12L.F)

2SK3074 Datasheets (5)

2SK3074 Datasheets Context Search

Untitled

2SK3074

Untitled

TOSHIBA NOTE

Untitled

2SK3074

Untitled

Power MOSFET, toshiba

2SK3074

GT30F131

TA4029CTC

IGBT GT30F124

RFM70U12D

JDV2S31CT

3sk catalog

sec 2sc5088

MT4S300T

MT4S300T

GT30F124

transistor bc 245

MT3S111P

Untitled

2SK3074

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