block diagram of energy saving system
Abstract: pin configuration of intel 80386 ACPI Implementers Guide acpi implementers Jae 50 pin ide temperature controller using microcontroller intel 80386 block diagram mobile MOTHERBOARD CIRCUIT diagram proteus software download ACPI CIRCUIT DIAGRAM
Text: ACPI Implementers’Guide Intel Microsoft Toshiba February 1, 1998 Draft Copyright 1996, 1997, 1998 Intel Corporation, Microsoft Corporation, Toshiba Corp. All rights reserved. INTELLECTUAL PROPERTY DISCLAIMER THIS SPECIFICATION IS PROVIDED “AS IS” WITH NO WARRANTIES WHATSOEVER INCLUDING ANY
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sandisk micro sd card geometry
Abstract: kingston micro SD card sandisk Memory Stick Micro lexar micro sd sandisk micro SD Card 2GB kingston sd 2GB sandisk micro sd kingston sd card 512 sandisk sd card geometry sandisk SD
Text: SanDisk 1999 Annual Report Table of Contents CONTENTS Reinforcing our Purpose. Embracing our Potential. 1 Letter from the President 2 Converging Markets. Compelling Opportunities. 4 Inventive Solutions. Breakthrough Applications. 7 Positioned for Success 8
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DM-3110
Abstract: XM-3401 CD150 Io20S RO-5031E XM-4101 CDR-510 9200e DM-3024 hp 3101 pin
Text: ZPCSCSI0ZDP CPS DC-9062-00 ZILOG CUSTOMER PROCUREMENT SPECIFICATION ZPCSCSI0ZDP PCMCIA SCSI ADAPTER EVALUATION KIT GENERAL DESCRIPTION SCSI DRIVER SPECIFICATIONS The ZPCSCSI0ZDP is an evaluation kit for Zilog's PCMCIA SCSI adapter solution, available for OEM license and
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DC-9062-00
Z53C8003FSC1746
Z8601720ASC
Z53C8003FSC1746,
Z8601720ASC
DM-3110
XM-3401
CD150
Io20S
RO-5031E
XM-4101
CDR-510
9200e
DM-3024
hp 3101 pin
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toshiba VGA 30 PIN LCD MONITOR CABLE CONNECTION D
Abstract: vga connector 28 pin IDC ibm pc FRONT PANEL connector CIRCUIT ultraview 635 CONECTOR vga LCD GLASS PANELS 42 pin Mono tft PC CONECTOR vga screen cleaner Stn LCD VGA mono
Text: Issued July 1997 249-4873 Data Pack F Colour TFT LCD kits and monitors with or without touch screen Data Sheet RS stock number 249-8780 (10.4in. TFT LCD kit) 249-8796 (10.4in. TFT LCD monitor 249-8803 (10.4in. TFT LCD monitor with built-in touch screen)
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ultraview 635
Abstract: skc24 13 pins vga signal cable UV6-5595 standard 15 pin vga connector MALE TO FEMALE UV635 vga connector hsync 663 lcd inverter 39 PIN TFT DISPLAY skb 14
Text: Issued November 1999 249-4873 Data Pack F Colour TFT LCD kits and monitors with or without touch screen Data Sheet RS stock number 249-8780 (10.4in. TFT LCD kit) TFT LCD Kit A fully integrated LCD PC compatible display solution, which incorporates the latest Toshiba 10.4" VGA High Bright
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diode Marking code v3
Abstract: sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 MC74HC1G14
Text: MC74HC1G14 Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt–Trigger input fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.
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MC74HC1G14
MC74HC
353/SC
diode Marking code v3
sot 23-5 marking code H5
V = Device Code
marking H5 sot 23-5
Wafer Fab Plant Codes ST
fairchild mos
xaa64
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V = Device Code
Abstract: vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A
Text: MC74VHC1G86 2-Input Exclusive OR Gate The MC74VHC1G86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC1G86
353/SC
V = Device Code
vsop8 package outline
Wafer Fab Plant Codes ST
14XXX
T138A
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V = Device Code
Abstract: No abstract text available
Text: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC1G02
353/SC
V = Device Code
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V = Device Code
Abstract: MC74VHC1G00
Text: MC74VHC1G00 2-Input NAND Gate The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC1G00
353/SC
V = Device Code
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wz 74 marking
Abstract: t138a V = Device Code
Text: MC74HC1G02 2-Input NOR Gate The MC74HC1G02 is a high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G02
MC74HC
353/SC
wz 74 marking
t138a
V = Device Code
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marking t132
Abstract: marking code V6 diode MC74VHC1G08 V = Device Code
Text: MC74VHC1G08 2-Input AND Gate The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC1G08
353/SC
marking t132
marking code V6 diode
V = Device Code
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vsop8 package outline
Abstract: vsop8 V = Device Code SOT 363 marking CODE LA marking h8 Wafer Fab Plant Codes ST marking 62 ON Semi diode Marking code v3 hep08 marking code vhc
Text: MC74VHC1G09 2-Input AND Gate with Open Drain Output The MC74VHC1G09 is an advanced high speed CMOS 2–input AND gate with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC1G09
vsop8 package outline
vsop8
V = Device Code
SOT 363 marking CODE LA
marking h8
Wafer Fab Plant Codes ST
marking 62 ON Semi
diode Marking code v3
hep08
marking code vhc
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 155 Mbps PCI-ATM Segmentation and Reassembly Chip 1 9 9 T C 3 5 8 5 6 A F V E R S I O N DAT A TOSHIBA AMERICA ELECTRONIC COMPONENTS, I NC 2. 4 B OOK 199 7 Toshiba Am erica Electronic Com ponents, Inc. Published in November, 1997 T o s h ib a p ro d u c ts d e s c rib e d in th is d o c u m e n t a re n o t a u th o riz e d fo r use as c ritic a l c o m p o n e n ts in life s u p p o rt s y s te m s w ith o u t th e w ritte n c o n s e n t o f th e a p p ro p ria te o ffic e r o f T o s h ib a
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TC35856AF
TC35856AF
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TOSHIBA el suffix
Abstract: Reel Taping Specification JEDEC toshiba tape and reel
Text: TOSHIBA TC74LCX14F/FN/FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74LCX14F, TC74LCX14FN, TC74LCX14FT LOW VOLTAGE HEX SCHMITT INVERTER WITH 5V TOLERANT INPUTS AND OUTPUTS The TC74LCX14 is a high perform ance CMOS SCHMITT N o te The JEDEC SOP (FN) is n o t
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TC74LCX14F/FN/FT
TC74LCX14F,
TC74LCX14FN,
TC74LCX14FT
TC74LCX14
TC74LCX04
Y39171126003333750692
TSSOP14/16/20pin
TC74LCX00FT
TOSHIBA el suffix
Reel Taping Specification JEDEC
toshiba tape and reel
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toshiba 1997 label
Abstract: 1sv101
Text: TOSHIBA 1SV101 TOSHIBA VARIABLE CAPACITANCE DIODE u v SILICON EPITAXIAL PLANAR TYPE i m FM TUNER APPLICATIONS. • High Capacitance Ratio C3V / C 9V = 2.0~2.7 • Low Series Resistance rsj = 0.3n Typ. • Small Package. • Low Tuning Voltage Range 3V-9V
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1SV101
--15V
50MHzv
toshiba 1997 label
1sv101
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1SV102
Abstract: C20V C25V
Text: TOSHIBA 1SV102 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 02 Unit in mm AM RADIO BAND TUNING APPLICATIONS. 4.3 MAX. • High Capacitance Ratio • High Q • Small Package. : C2V / C25V = 23 Typ. : Q = 400 (Typ.) CL55M AX. .
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1SV102
0L55MAX.
1SV102
C20V
C25V
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TLP91
Abstract: TLP910
Text: TLP910 T O SH IB A TENTATIVE TLP91 0 TOSHIBA PHOTO REFLECTIVE SENSOR GaAs LED + PHOTO TRANSISTOR PHOTO-REFLECTIVE SENSOR FOR SURFACE MOUNT FOR REFLOW SOLDERING USE ONLY DETECTION OF VCR REEL ROTATION TIMING DETECTION FOR ELECTRONIC PRINTERS AND TYPEWRITERS
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TLP910
TLP91
TLP910
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CS 5609
Abstract: 1sv149 st 9618 1SV149-C SB 8712
Text: 1SV 149 TOSHIBA SILICON EPITAXIAL PLANAR TYPE 1 S V 1 49 Unit in mm AM RADIO BAND TUNING APPLICATIONS. High Capacitance Ratio : C iy/C 8V = 15 Min. High Q : Q = 200 (Min.) Small Package Low Voltage Operation : 1V-8V a 5 5 MAX. CHARACTERISTIC Reverse Voltage
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1SV149
CS 5609
1sv149
st 9618
1SV149-C
SB 8712
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1SV102
Abstract: No abstract text available
Text: TOSHIBA 1 SV 102 TOSHIBA VARIABLE CAPACITANCE DIODE u v SILICON EPITAXIAL PLANAR TYPE m ? AM RADIO BAND TUNING APPLICATIONS. • High Capacitance Ratio : C2V/,^25V ~23 Typ. • High Q : Q = 400 (Typ.) • Small Package. M A X IM U M RATINGS (Ta = 25 °0
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1sv149
Abstract: AY 3 8210
Text: 1SV149 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE U 1 V SILICON EPITAXIAL PLANAR TYPE A Q Unit in mm AM RADIO BAND TUNING APPLICATIONS. • • • High Capacitance Ratio : C iy /C g y = 15 Min. High Q : Q = 200 (Min.) Small Package Low Voltage Operation ; 1V-8V
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1SV149
1sv149
AY 3 8210
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1SV101
Abstract: c9v diode
Text: TOSHIBA 1SV101 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 01 FM TUNER APPLICATIONS. Unit in mm 4.3 MAX. • • • • High Capacitance Ratio Low Series Resistance Small Package. Low Tuning Voltage Range ^3V / Cgy = 2.0~2.7 rs = 0.30 Typ.
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1SV101
0L55MAX.
50MHz
1SV101
c9v diode
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Untitled
Abstract: No abstract text available
Text: 1SV102 T O SH IB A TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 02 Unit in mm AM RADIO BAND TUNING APPLICATIONS. 4.3 M A X. High Capacitance Ratio : C2V ! C25V = 23 Typ. High Q : Q = 400 (Typ.) Small Package. • • • CL551ÍAX.
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1SV102
CL551Ã
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1sv149
Abstract: No abstract text available
Text: 1SV149 T O SH IB A TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 49 Unit in mm AM RADIO BAND TUNING APPLICATIONS. • • • • High Capacitance Ratio : Ci y /C8 y = 15 Min. High Q : Q = 200 (Min.) Small Package Low Voltage Operation : 1V-8V
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1SV149
1sv149
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 1SV101 TOSHIBA VARIABLE CAPACITANCE DIODE FM TUNER APPLICATIONS. SILICON EPITAXIAL PLANAR TYPE 1 S V 1 01 Unit in mm 4.3 MAX. High Capacitance Ratio Low Series Resistance Small Package. Low Tuning Voltage Range : e 3 v / C 9 v = 2 .0 ~ 2 . 7 : rs = 0.30 Typ.
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1SV101
CL551Ã
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