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    TOSHIBA 1997 LABEL Search Results

    TOSHIBA 1997 LABEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA 1997 LABEL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    block diagram of energy saving system

    Abstract: pin configuration of intel 80386 ACPI Implementers Guide acpi implementers Jae 50 pin ide temperature controller using microcontroller intel 80386 block diagram mobile MOTHERBOARD CIRCUIT diagram proteus software download ACPI CIRCUIT DIAGRAM
    Text: ACPI Implementers’Guide Intel Microsoft Toshiba February 1, 1998 Draft Copyright 1996, 1997, 1998 Intel Corporation, Microsoft Corporation, Toshiba Corp. All rights reserved. INTELLECTUAL PROPERTY DISCLAIMER THIS SPECIFICATION IS PROVIDED “AS IS” WITH NO WARRANTIES WHATSOEVER INCLUDING ANY


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    sandisk micro sd card geometry

    Abstract: kingston micro SD card sandisk Memory Stick Micro lexar micro sd sandisk micro SD Card 2GB kingston sd 2GB sandisk micro sd kingston sd card 512 sandisk sd card geometry sandisk SD
    Text: SanDisk 1999 Annual Report Table of Contents CONTENTS Reinforcing our Purpose. Embracing our Potential. 1 Letter from the President 2 Converging Markets. Compelling Opportunities. 4 Inventive Solutions. Breakthrough Applications. 7 Positioned for Success 8


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    DM-3110

    Abstract: XM-3401 CD150 Io20S RO-5031E XM-4101 CDR-510 9200e DM-3024 hp 3101 pin
    Text: ZPCSCSI0ZDP CPS DC-9062-00 ZILOG CUSTOMER PROCUREMENT SPECIFICATION ZPCSCSI0ZDP PCMCIA SCSI ADAPTER EVALUATION KIT GENERAL DESCRIPTION SCSI DRIVER SPECIFICATIONS The ZPCSCSI0ZDP is an evaluation kit for Zilog's PCMCIA SCSI adapter solution, available for OEM license and


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    DC-9062-00 Z53C8003FSC1746 Z8601720ASC Z53C8003FSC1746, Z8601720ASC DM-3110 XM-3401 CD150 Io20S RO-5031E XM-4101 CDR-510 9200e DM-3024 hp 3101 pin PDF

    toshiba VGA 30 PIN LCD MONITOR CABLE CONNECTION D

    Abstract: vga connector 28 pin IDC ibm pc FRONT PANEL connector CIRCUIT ultraview 635 CONECTOR vga LCD GLASS PANELS 42 pin Mono tft PC CONECTOR vga screen cleaner Stn LCD VGA mono
    Text: Issued July 1997 249-4873 Data Pack F Colour TFT LCD kits and monitors with or without touch screen Data Sheet RS stock number 249-8780 (10.4in. TFT LCD kit) 249-8796 (10.4in. TFT LCD monitor 249-8803 (10.4in. TFT LCD monitor with built-in touch screen)


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    ultraview 635

    Abstract: skc24 13 pins vga signal cable UV6-5595 standard 15 pin vga connector MALE TO FEMALE UV635 vga connector hsync 663 lcd inverter 39 PIN TFT DISPLAY skb 14
    Text: Issued November 1999 249-4873 Data Pack F Colour TFT LCD kits and monitors with or without touch screen Data Sheet RS stock number 249-8780 (10.4in. TFT LCD kit) TFT LCD Kit A fully integrated LCD PC compatible display solution, which incorporates the latest Toshiba 10.4" VGA High Bright


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    diode Marking code v3

    Abstract: sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 MC74HC1G14
    Text: MC74HC1G14 Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt–Trigger input fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.


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    MC74HC1G14 MC74HC 353/SC diode Marking code v3 sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 PDF

    V = Device Code

    Abstract: vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A
    Text: MC74VHC1G86 2-Input Exclusive OR Gate The MC74VHC1G86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


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    MC74VHC1G86 353/SC V = Device Code vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A PDF

    V = Device Code

    Abstract: No abstract text available
    Text: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


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    MC74VHC1G02 353/SC V = Device Code PDF

    V = Device Code

    Abstract: MC74VHC1G00
    Text: MC74VHC1G00 2-Input NAND Gate The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


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    MC74VHC1G00 353/SC V = Device Code PDF

    wz 74 marking

    Abstract: t138a V = Device Code
    Text: MC74HC1G02 2-Input NOR Gate The MC74HC1G02 is a high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


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    MC74HC1G02 MC74HC 353/SC wz 74 marking t138a V = Device Code PDF

    marking t132

    Abstract: marking code V6 diode MC74VHC1G08 V = Device Code
    Text: MC74VHC1G08 2-Input AND Gate The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


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    MC74VHC1G08 353/SC marking t132 marking code V6 diode V = Device Code PDF

    vsop8 package outline

    Abstract: vsop8 V = Device Code SOT 363 marking CODE LA marking h8 Wafer Fab Plant Codes ST marking 62 ON Semi diode Marking code v3 hep08 marking code vhc
    Text: MC74VHC1G09 2-Input AND Gate with Open Drain Output The MC74VHC1G09 is an advanced high speed CMOS 2–input AND gate with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


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    MC74VHC1G09 vsop8 package outline vsop8 V = Device Code SOT 363 marking CODE LA marking h8 Wafer Fab Plant Codes ST marking 62 ON Semi diode Marking code v3 hep08 marking code vhc PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 155 Mbps PCI-ATM Segmentation and Reassembly Chip 1 9 9 T C 3 5 8 5 6 A F V E R S I O N DAT A TOSHIBA AMERICA ELECTRONIC COMPONENTS, I NC 2. 4 B OOK 199 7 Toshiba Am erica Electronic Com ponents, Inc. Published in November, 1997 T o s h ib a p ro d u c ts d e s c rib e d in th is d o c u m e n t a re n o t a u th o riz e d fo r use as c ritic a l c o m p o n e n ts in life s u p p o rt s y s te m s w ith o u t th e w ritte n c o n s e n t o f th e a p p ro p ria te o ffic e r o f T o s h ib a


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    TC35856AF TC35856AF PDF

    TOSHIBA el suffix

    Abstract: Reel Taping Specification JEDEC toshiba tape and reel
    Text: TOSHIBA TC74LCX14F/FN/FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74LCX14F, TC74LCX14FN, TC74LCX14FT LOW VOLTAGE HEX SCHMITT INVERTER WITH 5V TOLERANT INPUTS AND OUTPUTS The TC74LCX14 is a high perform ance CMOS SCHMITT N o te The JEDEC SOP (FN) is n o t


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    TC74LCX14F/FN/FT TC74LCX14F, TC74LCX14FN, TC74LCX14FT TC74LCX14 TC74LCX04 Y39171126003333750692 TSSOP14/16/20pin TC74LCX00FT TOSHIBA el suffix Reel Taping Specification JEDEC toshiba tape and reel PDF

    toshiba 1997 label

    Abstract: 1sv101
    Text: TOSHIBA 1SV101 TOSHIBA VARIABLE CAPACITANCE DIODE u v SILICON EPITAXIAL PLANAR TYPE i m FM TUNER APPLICATIONS. • High Capacitance Ratio C3V / C 9V = 2.0~2.7 • Low Series Resistance rsj = 0.3n Typ. • Small Package. • Low Tuning Voltage Range 3V-9V


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    1SV101 --15V 50MHzv toshiba 1997 label 1sv101 PDF

    1SV102

    Abstract: C20V C25V
    Text: TOSHIBA 1SV102 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 02 Unit in mm AM RADIO BAND TUNING APPLICATIONS. 4.3 MAX. • High Capacitance Ratio • High Q • Small Package. : C2V / C25V = 23 Typ. : Q = 400 (Typ.) CL55M AX. .


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    1SV102 0L55MAX. 1SV102 C20V C25V PDF

    TLP91

    Abstract: TLP910
    Text: TLP910 T O SH IB A TENTATIVE TLP91 0 TOSHIBA PHOTO REFLECTIVE SENSOR GaAs LED + PHOTO TRANSISTOR PHOTO-REFLECTIVE SENSOR FOR SURFACE MOUNT FOR REFLOW SOLDERING USE ONLY DETECTION OF VCR REEL ROTATION TIMING DETECTION FOR ELECTRONIC PRINTERS AND TYPEWRITERS


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    TLP910 TLP91 TLP910 PDF

    CS 5609

    Abstract: 1sv149 st 9618 1SV149-C SB 8712
    Text: 1SV 149 TOSHIBA SILICON EPITAXIAL PLANAR TYPE 1 S V 1 49 Unit in mm AM RADIO BAND TUNING APPLICATIONS. High Capacitance Ratio : C iy/C 8V = 15 Min. High Q : Q = 200 (Min.) Small Package Low Voltage Operation : 1V-8V a 5 5 MAX. CHARACTERISTIC Reverse Voltage


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    1SV149 CS 5609 1sv149 st 9618 1SV149-C SB 8712 PDF

    1SV102

    Abstract: No abstract text available
    Text: TOSHIBA 1 SV 102 TOSHIBA VARIABLE CAPACITANCE DIODE u v SILICON EPITAXIAL PLANAR TYPE m ? AM RADIO BAND TUNING APPLICATIONS. • High Capacitance Ratio : C2V/,^25V ~23 Typ. • High Q : Q = 400 (Typ.) • Small Package. M A X IM U M RATINGS (Ta = 25 °0


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    1sv149

    Abstract: AY 3 8210
    Text: 1SV149 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE U 1 V SILICON EPITAXIAL PLANAR TYPE A Q Unit in mm AM RADIO BAND TUNING APPLICATIONS. • • • High Capacitance Ratio : C iy /C g y = 15 Min. High Q : Q = 200 (Min.) Small Package Low Voltage Operation ; 1V-8V


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    1SV149 1sv149 AY 3 8210 PDF

    1SV101

    Abstract: c9v diode
    Text: TOSHIBA 1SV101 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 01 FM TUNER APPLICATIONS. Unit in mm 4.3 MAX. • • • • High Capacitance Ratio Low Series Resistance Small Package. Low Tuning Voltage Range ^3V / Cgy = 2.0~2.7 rs = 0.30 Typ.


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    1SV101 0L55MAX. 50MHz 1SV101 c9v diode PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SV102 T O SH IB A TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 02 Unit in mm AM RADIO BAND TUNING APPLICATIONS. 4.3 M A X. High Capacitance Ratio : C2V ! C25V = 23 Typ. High Q : Q = 400 (Typ.) Small Package. • • • CL551ÍAX.


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    1SV102 CL551Ã PDF

    1sv149

    Abstract: No abstract text available
    Text: 1SV149 T O SH IB A TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 49 Unit in mm AM RADIO BAND TUNING APPLICATIONS. • • • • High Capacitance Ratio : Ci y /C8 y = 15 Min. High Q : Q = 200 (Min.) Small Package Low Voltage Operation : 1V-8V


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    1SV149 1sv149 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 1SV101 TOSHIBA VARIABLE CAPACITANCE DIODE FM TUNER APPLICATIONS. SILICON EPITAXIAL PLANAR TYPE 1 S V 1 01 Unit in mm 4.3 MAX. High Capacitance Ratio Low Series Resistance Small Package. Low Tuning Voltage Range : e 3 v / C 9 v = 2 .0 ~ 2 . 7 : rs = 0.30 Typ.


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    1SV101 CL551Ã PDF