Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TOP MARK MARKING 54 DBM Search Results

    TOP MARK MARKING 54 DBM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    TOP MARK MARKING 54 DBM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Schematics 5250

    Abstract: schematic 5250 GP 035 F QFN 3X3 A113 A114 A115 AN1955 C101 JESD22
    Text: Document Number: MMG5004N Rev. 0, 8/2006 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG5004NR2 WLAN Power Amplifier Designed for 802.11a applications with frequencies from 4900 to 5900 MHz. • 23 dBm P1dB CW @ 5.25 GHz


    Original
    PDF MMG5004N MMG5004NR2 Schematics 5250 schematic 5250 GP 035 F QFN 3X3 A113 A114 A115 AN1955 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMG5004N Rev. 0, 8/2006 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG5004NR2 WLAN Power Amplifier 4.9-5.9 GHz, 24 dB, 23 dBm 802.11a WLAN POWER AMPLIFIER InGaP HBT CASE 1483-01 QFN 3x3


    Original
    PDF MMG5004N MMG5004NR2 MMG5004N

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMG5004N Rev. 0, 8/2006 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG5004NR2 WLAN Power Amplifier 4.9-5.9 GHz, 24 dB, 23 dBm 802.11a WLAN POWER AMPLIFIER InGaP HBT ARCHIVE INFORMATION


    Original
    PDF MMG5004N MMG5004NR2

    Untitled

    Abstract: No abstract text available
    Text: Si4356 Si4356 S TA NDALONE S UB -GH Z R ECEIVER Features      Pin configurable Frequency range = 315–917 MHz Supply Voltage = 1.8–3.6 V Receive sensitivity = Up to –113 dBm Modulation  G FSK        OOK


    Original
    PDF Si4356 Si4356 20-pin

    3 to 10 GHz bandpass filter

    Abstract: No abstract text available
    Text: SAW Bandpass Filter AGSF-G56 Features z GPS applications z Usable bandwidth of 2 MHz z No impedance matching require for operation at 50 Ω z SMD Package 2.0 mm x 1.6 mm× 0.7 mm z Single-ended Operation z RoHS Compliant Package Dimensions 2 3 3 2 1 4 4


    Original
    PDF AGSF-G56 300mm/min 3 to 10 GHz bandpass filter

    NC7001

    Abstract: 3 to 10 GHz bandpass filter 3 to 7 GHz bandpass filter
    Text: SAW Bandpass Filter F1G56 Features z GPS applications z Usable bandwidth of 2 MHz z No impedance matching require for operation at 50 Ω z SMD Package 2.0 mm x 1.6 mm× 0.7 mm z Single-ended Operation z RoHS Compliant Package Dimensions 2 3 3 2 4 4 1 LQ


    Original
    PDF F1G56 300mm/min NC7001-AS02 NC7001 3 to 10 GHz bandpass filter 3 to 7 GHz bandpass filter

    S-AU84

    Abstract: ACPR10
    Text: S-AU84 TOSHIBA RF Power Amplifier Module S-AU84 Power Amplifier Module for Japan cdmaOne Features • High output power : Po = 27.5 dBmW min · Low operating current : ICC = 415 mA (typ.) @Po = 27.5 dBmW VCC = 3.5 V 1X modulation : ICC = 140 mA (typ.) @Po = 17.0 dBmW


    Original
    PDF S-AU84 S-AU84 ACPR10

    Untitled

    Abstract: No abstract text available
    Text: ACFF-1025 LTE Band 41 Bandpass Filter Data Sheet Description Features The Avago ACFF-1025 is a highly miniaturized LTE Band 41 2496 – 2690 MHz bandpass filter combined with a WLAN/Wi-Fi band reject filter. • 50 W Input/Output The ACFF-1025 is designed to operate in WiMAX transceiver applications which coexist with WLAN, Wi-Fi and/or


    Original
    PDF ACFF-1025 ACFF-1025 ACFF-1025-BLK ACFF-1025-TR1 AV02-4302EN

    ELM14570GA

    Abstract: No abstract text available
    Text: ELM14570GA IF IC for communication equipments •General description ELM14570GA is a wide band IF IC with a maximum IF frequency band of 15 MHz. It includes an IF limiter amplifier, RSSI and Detector. ELM14570GA is available in the very small SON8-3x3 package.


    Original
    PDF ELM14570GA -30dBm,

    12065A104JAT2A

    Abstract: 12065A103JAT2A RF Product Device Data
    Text: Freescale Semiconductor Technical Data Rev. 1, 1/2005 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz MMG2401R2 • 26.5 dBm P1dB @ 2450 MHz • • • • Power Gain: 27.5 dB Typ @ f = 2450 MHz, Class AB


    Original
    PDF MMG2401R2 MMG2401R2 12065A104JAT2A 12065A103JAT2A RF Product Device Data

    TOSHIBA u87

    Abstract: S-AU87
    Text: S-AU87 TOSHIBA RF Power Amplifier Module S-AU87 Power Amplifier Module for Japan IS-95 and CDMA2000 1X Features Po = 27.5dBmW min @IS-95 mddulation • High output power: • Low operating current: ICC = 395 mA (typ.) @Po = 27.5dBmW, VCC = 3.5 V, IS-95 modulation


    Original
    PDF S-AU87 IS-95 CDMA2000 TOSHIBA u87 S-AU87

    12065A104JAT2A

    Abstract: F QFN 3X3 020C JESD22 MMG2401 MMG2401R2 A114-G 12065A105JAT2A 156 qfn TRANSISTOR A114 E
    Text: Freescale Semiconductor Technical Data MMG2401 Rev. 0, 11/2004 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz MMG2401R2 • 26.5 dBm P1dB @ 2450 MHz • • • •


    Original
    PDF MMG2401 MMG2401R2 12065A104JAT2A F QFN 3X3 020C JESD22 MMG2401 MMG2401R2 A114-G 12065A105JAT2A 156 qfn TRANSISTOR A114 E

    ACMD-7410-TR1

    Abstract: Device Name 7410 fbar GPS GLONASS filter marking 7410 GPS GLONASS FBAR filter ACMD7410 ACMD-7410
    Text: ACMD-7410 UMTS/NCDMA/Co-band GSM Rx Band 2 Duplexer Data Sheet Description Features The Avago ACMD-7410 is a highly miniaturized duplexer designed for use in UMTS Band 2 1850.48 – 1909.52 MHz UL, 1930.48 – 1989.52 MHz DL handsets and mobile data terminals.


    Original
    PDF ACMD-7410 ACMD-7410 JESD22-A113D ACMD-7410-BLK ACMD-7410-TR1 AV02-2360EN ACMD-7410-TR1 Device Name 7410 fbar GPS GLONASS filter marking 7410 GPS GLONASS FBAR filter ACMD7410

    ML200M

    Abstract: F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2 12065A104JAT2A
    Text: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 2, 4/2005 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz


    Original
    PDF MMG2401 MMG2401NR2 ML200M F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2 12065A104JAT2A

    dd s22

    Abstract: marking 7410 fbar GPS GLONASS filter
    Text: ACMD-7410 UMTS/NCDMA/Co-band GSM Rx Band 2 Duplexer Data Sheet Description Features The Avago ACMD-7410 is a highly miniaturized duplexer designed for use in UMTS Band 2 1850.48 – 1909.52 MHz UL, 1930.48 – 1989.52 MHz DL handsets and mobile data terminals.


    Original
    PDF ACMD-7410 ACMD-7410 JESD22-A113D ACMD-7410-BLK ACMD-7410-TR1 AV02-2360EN dd s22 marking 7410 fbar GPS GLONASS filter

    12065A104JAT2A

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 3, 5/2006 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz


    Original
    PDF MMG2401 MMG2401NR2 12065A104JAT2A

    12065A104JAT2A

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 2, 4/2005 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz


    Original
    PDF MMG2401 MMG2401NR2 MMG2401 12065A104JAT2A

    murata REEL label lot number

    Abstract: TRANSISTOR SMD MARKING CODE WS ROHM polystyrene capacitor IPC-7711 ws1101 smd transistor marking da A423801A 23801A J-STD-020B J-STD-033
    Text: !" PRELIMINARY DATASHEET WS1101 Power Amplifier Module for CDMA/AMPS 824-849MHz DATASHEET (DEVICE : WS1101, 3x3 CDMA/AMPS PAM) Issued Date : January 29 , 2005 S. W. Paek Director, Module Group 1 Preliminary Information WM0501-11 !" PRODUCT DESCRIPTION WS1101


    Original
    PDF WS1101 824-849MHz) WS1101, WM0501-11 WS1101 824-849MHz murata REEL label lot number TRANSISTOR SMD MARKING CODE WS ROHM polystyrene capacitor IPC-7711 smd transistor marking da A423801A 23801A J-STD-020B J-STD-033

    south bridge SIS 968

    Abstract: S6 marking code onsemi Diode SI3018-F-FS marking code 7N1 Si2457 Si3018 Si2404 Si2415 Si2434 SI2434-D-GT
    Text: Si2457/34/15/04 V.90, V.34, V. 32 B IS , V.22 B IS I SO MO DE M WITH G L O B A L DAA Features  This data sheet applies to Si2457/34/  Integrated DAA 15/04 Revision D Over 6000 V capacitive isolation  Data modem formats Parallel phone detect


    Original
    PDF Si2457/34/15/04 Si2457/34/ 42bis, south bridge SIS 968 S6 marking code onsemi Diode SI3018-F-FS marking code 7N1 Si2457 Si3018 Si2404 Si2415 Si2434 SI2434-D-GT

    Untitled

    Abstract: No abstract text available
    Text: SN2100 Bluetooth Class 1 Module User Manual And Datasheet Version: 1.1 June 25, 2013 Note: SyChip, L.L.C. reserves the right to make changes in specifications at any time and without notice. The information furnished in this data sheet is believed to be accurate and reliable. However, no responsibility is assumed


    Original
    PDF SN2100 Jul-07-2011 Nov-15-2011 SN2100

    2SK2974

    Abstract: 093.216 transistor 2sk2974 GR400 093.941 9357 MITSUBISHI RF POWER MOS FET 015789 FET MARKING CR10-510
    Text: MITSUBISHI RF POWER MOS FET 2SK2974 DESCRIPTION 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING INDEX MARK Dimensions in mm TOP (BOTTOM) FEATURES • High power gain:Gpe≥8.4dB @VDD=7.2V,f=450MHz,Pin=30dBm


    Original
    PDF 2SK2974 2SK2974 450MHz 30dBm t8135 093.216 transistor 2sk2974 GR400 093.941 9357 MITSUBISHI RF POWER MOS FET 015789 FET MARKING CR10-510

    ilp in i7 processor

    Abstract: TA 2025 B S6 marking code onsemi Diode diode MARKING A1 v34 marking code 7N1 multimedia isomodem differential electret condenser microphone preamp Si3000 V32B c3 two wire electret microphone condenser
    Text: Si2494/39 V. 92 A N D V.34 ISO MODEM W I T H G LOBAL DAA Features             EEPROM interface Commercial or industrial temperature range DTMF detection/generation Si3000 Voice Codec Interface Hardware support for mic,


    Original
    PDF Si2494/39 Si3000 TBR-38, TIA/EIA4790 GPIO16, GPIO17, ilp in i7 processor TA 2025 B S6 marking code onsemi Diode diode MARKING A1 v34 marking code 7N1 multimedia isomodem differential electret condenser microphone preamp V32B c3 two wire electret microphone condenser

    007-AB0237

    Abstract: No abstract text available
    Text: FUJITSU Component Wireless module Bluetooth Low Energy Module MBH7BLZ01 Datasheet Rev. 0.06 MAR 31, 2014 The above Product is designed, developed and manufactured as contemplated for general use, including without limitation, general office use, personal use, household use, and


    Original
    PDF MBH7BLZ01 007-AB0237

    ACMD-7617

    Abstract: marking smd wmf
    Text: ACMD-7617 UMTS Band 1 Duplexer Data Sheet Description Features The Avago ACMD-7617 is a highly miniaturized duplexer designed for use in Digital Enhanced Cordless Telecommunications DECT applications operating in UMTS Band 1 (1920 – 1980 MHz UL, 2110 – 2170 MHz DL).


    Original
    PDF ACMD-7617 ACMD-7617 JESD22-A113D ACMD-7617-BLK ACMD-7617-TR1 AV02-2912EN marking smd wmf