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    Teledyne Microwave Solutions ACPR109

    RF Amplifier IC
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    ACPR10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RF35

    Abstract: No abstract text available
    Text: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 01 — 4 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF6G27-10; BLF6G27-10G ACPR885k ACPR1980k BLF6G27-10 BLF6G27-10G RF35

    TRANSISTOR J601

    Abstract: gp816 RF35 J2396 J249
    Text: BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance


    Original     		PDF BLF6G38-10; BLF6G38-10G ACPR885k ACPR1980k BLF6G38-10 BLF6G38-10G TRANSISTOR J601 gp816 RF35 J2396 J249

    BLF7G27LS-100

    Abstract: BLF7G27L-100 ACPR1980 BLF7G27 flanged pin
    Text: BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 2 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-100; BLF7G27LS-100 ACPR885k IS-95 IS-95 BLF7G27L-100 7G27LS-100 BLF7G27LS-100 ACPR1980 BLF7G27 flanged pin

    150P

    Abstract: BLF7G27LS-150P ACPR1980 ACPR885
    Text: BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Rev. 1 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-150P; BLF7G27LS-150P IS-95 ACPR885k IS-95 BLF7G27L-150P 7G27LS-150P 150P BLF7G27LS-150P ACPR1980 ACPR885

    BLF7G20L-90P

    Abstract: 1800 ldmos BLF7G20LS-90P RF35 PLW70
    Text: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 01 — 28 April 2010 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF7G20L-90P; BLF7G20LS-90P ACPR400k ACPR600k BLF7G20L-90P 7G20LS-90P 1800 ldmos BLF7G20LS-90P RF35 PLW70

    BLF7G20LS-140P

    Abstract: 850 SMD Rework Station RF35
    Text: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF7G20LS-140P ACPR400k ACPR600k BLF7G20LS-140P 850 SMD Rework Station RF35

    J122 SMD TRANSISTOR

    Abstract: BLC6G22L-40BN/2 800B BLF6G22L-40BN
    Text: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G22L-40BN J122 SMD TRANSISTOR BLC6G22L-40BN/2 800B BLF6G22L-40BN

    BU 0603

    Abstract: 800B BLF6G15L 029-KW
    Text: BLF6G15L-250PBRN Power LDMOS transistor Rev. 2 — 3 November 2010 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


    Original     		PDF BLF6G15L-250PBRN BU 0603 800B BLF6G15L 029-KW

    Untitled

    Abstract: No abstract text available
    Text: BLF6G15L-40RN; BLF6G15LS-40RN Power LDMOS transistor Rev. 2 — 14 May 2012 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


    Original     		PDF BLF6G15L-40RN; BLF6G15LS-40RN BLF6G15L-40RN 6G15LS-40RN

    Untitled

    Abstract: No abstract text available
    Text: BLF6G27-100; BLF6G27LS-100 WiMAX power LDMOS transistor Rev. 01 — 3 May 2010 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF6G27-100; BLF6G27LS-100 ACPR885k ACPR1980k ACPR10M BLF6G27-100 BLF6G27LS-100

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-140; BLF7G27LS-140 Power LDMOS transistor Rev. 2 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-140; BLF7G27LS-140 IS-95 ACPR885k BLF7G27L-140 7G27LS-140

    sot1121a

    Abstract: J226 SMD
    Text: BLF7G21L-160P; BLF7G21LS-160P Power LDMOS transistor Rev. 2 — 13 October 2011 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2050 MHz. Table 1. Typical performance


    Original     		PDF BLF7G21L-160P; BLF7G21LS-160P BLF7G21L-160P 7G21LS-160P sot1121a J226 SMD

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-135 Power LDMOS transistor Rev. 2 — 26 March 2012 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF7G27L-135

    SmD TRANSISTOR a75

    Abstract: No abstract text available
    Text: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF7G20LS-140P ACPR400k ACPR600k SmD TRANSISTOR a75

    Untitled

    Abstract: No abstract text available
    Text: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G22L-40BN

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-140; BLF7G27LS-140 Power LDMOS transistor Rev. 3 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-140; BLF7G27LS-140 ACPR885k IS-95 IS-95 BLF7G27L-140 7G27LS-140

    Untitled

    Abstract: No abstract text available
    Text: BLF6G10L-40BRN Power LDMOS transistor Rev. 3 — 16 November 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.


    Original     		PDF BLF6G10L-40BRN

    ATC100B

    Abstract: avx1206 BLF7G22L-130 BLF7G22LS-130 RO4350 transistor BC 185
    Text: BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor Rev. 4 — 20 January 2011 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF7G22L-130; BLF7G22LS-130 BLF7G22L-130 7G22LS-130 ATC100B avx1206 BLF7G22LS-130 RO4350 transistor BC 185

    ACPR1980

    Abstract: ACPR885
    Text: BLF6G27L-50BN; BLF6G27LS-50BN Power LDMOS transistor Rev. 2 — 7 April 2011 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF6G27L-50BN; BLF6G27LS-50BN BLF6G27L-50BN 6G27LS-50BN ACPR1980 ACPR885

    TRANSISTOR j412

    Abstract: J412 - TRANSISTOR SMD BLF6G38S-25
    Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1.


    Original     		PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 TRANSISTOR j412 J412 - TRANSISTOR SMD

    S-AU84

    Abstract: ACPR10
    Text: S-AU84 TOSHIBA RF Power Amplifier Module S-AU84 Power Amplifier Module for Japan cdmaOne Features • High output power : Po = 27.5 dBmW min · Low operating current : ICC = 415 mA (typ.) @Po = 27.5 dBmW VCC = 3.5 V 1X modulation : ICC = 140 mA (typ.) @Po = 17.0 dBmW


    Original     		PDF S-AU84 S-AU84 ACPR10

    helicoil 05

    Abstract: No abstract text available
    Text: rev. 12/07 ARJ109 0.5 TO 200 MHz GULLWING CASCADABLE AMPLIFIER ARJ109 Typical Values High Output Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Second Order I.P. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Third Order I.P. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF ARJ109 10-pin helicoil 05

    nxp power microwave transistor

    Abstract: ACPR885 RF35 ACPR10
    Text: BLF6G27-75; BLF6G27LS-75 WiMAX power LDMOS transistor Rev. 01 — 22 October 2009 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF6G27-75; BLF6G27LS-75 ACPR885k ACPR1980k IS-95 BLF6G27-75 6G27LS-75 nxp power microwave transistor ACPR885 RF35 ACPR10

    Untitled

    Abstract: No abstract text available
    Text: BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor Rev. 2.1 — 2 November 2011 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF7G22L-160; BLF7G22LS-160 BLF7G22L-160 7G22LS-160