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    TO92 92 94 91 Search Results

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    A 928A

    Abstract: 74Ks A992 sc2316 A928a sc1845 PNP 3-224 2N5401K
    Text: PNP Medium Power Transistors Device No. [Mark] Case Style VCES* V V CBO EBO V (V) Min (V) Min Min VCEO (continued) ICBO IC V CE VCB hFE & @ Min Max (mA) (V) (nA) @ (V) Max V BE(SAT) V BE(ON) * IC C ob (mA) @ (pF) (V) & IC (V) Max Max (I = ) Min Max B 10


    Original     		PDF KSA1203 ZT6726 O-92L OT-89 O-261 O-226 O-236 A 928A 74Ks A992 sc2316 A928a sc1845 PNP 3-224 2N5401K

    CS9013

    Abstract: CS9011 CS9012 BC327 SOT 23-6 CS8050 BC547 CS9018 BF494 to-92 .y1 do-213ac
    Text: Discrete POWER & Signal Technologies Pro Electron Diode Series Leaded Switching Diodes Device No. Vrrm I rrm V Min (nA) Min BAV19 BAV20 BAV21 BAV102 BAV103 100 150 200 150 200 100 100 100 100 100 BAW62 BAW76 BAX13 BAX16 BAY19 75 50 50 150 100 BAY71 BAY72


    Original     		PDF BAV19 BAV20 BAV21 BAV102 BAV103 BAW62 BAW76 BAX13 BAX16 BAY19 CS9013 CS9011 CS9012 BC327 SOT 23-6 CS8050 BC547 CS9018 BF494 to-92 .y1 do-213ac

    S 9018 to-92

    Abstract: C1674K SC1674 C2786 2sc 3138 2369A to-92
    Text: NPN High Speed Saturated Switches Device No. [Mark] Case Style PN5134 VCEO V Min VCES* V VCBO EBO (V) (V) Min Min ICBO VCB (nA) @ (V) Max I V hFE @ C & CE Min Max (mA) (V) 10 20* 3.5 100 15 20 15 B SV52 [B 2] TO-236 (49) 12 20 5.0 100 10 25 40 25 MMBT2369 [1J]


    Original     		PDF PN5134 O-236 S 9018 to-92 C1674K SC1674 C2786 2sc 3138 2369A to-92

    c639

    Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05


    Original     		PDF 3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423

    transistor C639

    Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W


    Original     		PDF 3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor

    ST3904

    Abstract: NS3903 TIS92 2N2926 NS3904 2n2926 ses 2N915 MPQ3904 2N3694 2N2712
    Text: NPN Transistors Case Style Vcbo V Min vCEO (V) Min Vebo (V) Min 2N2712 TO-92 (94) 1B 18 2N2714 TO-92 (94) 18 2N2923 TO-92 (94) 2N2924 VCE(SAT) VBE(SAT) A m p lifie r s . C0b (PF) Max a n d S w itc h e s toff (ns) Max NF (dB) Max Test Conditions Process No.


    OCR Scan     		PDF

    PN544

    Abstract: TI59 national 2N3859 2N2712 2N915 MPQ2222 MPQ6700 T1890 TN2219 PN101
    Text: This NPN Transistors NATL @ . VCE SAT VBE(SAT) (V) (V) c Max Min Max v * C0b (PF) Max * ‘ off (ns) Max NF (dB) Max hFE Min Max 5 500 18 75 225 2 4.5 18 5 500 18 75 225 2 4.5 25 25 5 100 25 90 180 2 (1 kHz) 10 10 10 TO-92 (94) 25 25 5 100 25 150 300


    OCR Scan     		PDF T-29-Of T-29-01 PN544 TI59 national 2N3859 2N2712 2N915 MPQ2222 MPQ6700 T1890 TN2219 PN101

    2N5133

    Abstract: TIS92 2N4286 cm 45-12 MPS6566 transistor 2N2712 2N3707 2N3827 2N915
    Text: NATL SENICOND 6 5 0 1130 NATL {D ISCRETE} SEMICOND, àfl <D I S C R E T E L ' DeT| b S G H S D 00353^ 5 28C 35 3 9 5 o ' S O “ ' w •</) c Ç0 u. eg « Z 3 5 Q . Z ■gu. g 2 - E Ï— H < X « S es = > if o3 I « § £ * >u HI — >U S M in in in -U 1


    OCR Scan     		PDF tSD113D hSD113D 2N5133 TIS92 2N4286 cm 45-12 MPS6566 transistor 2N2712 2N3707 2N3827 2N915

    BD373

    Abstract: 2n 2222A 3904 NSDU55 National Semiconductor Discrete devices catalog ITT+Semiconductors+saj+300+t BC560 NSDU05
    Text: v CE0 iMt (V e its ) M in too D e vice s KPN 2N 6730 * M « •M M M c (M H t) : .; mA 5 — PD (Amb) (m W ) 925°C 1000 80 250 50 75 100 T 0 -2 0 2 (5 5 ) 1333 1000 50 250 250 50 200 T O -237(91) 850 250 50 200 T 0 -2 0 2 (5 5 ) 2000 150 100 50 TO -39 800


    OCR Scan     		PDF NSDU07 2IM3700 2M6731 PM3638 PN3638A BC239 BC309 BC368 BC369 O-236AB BD373 2n 2222A 3904 NSDU55 National Semiconductor Discrete devices catalog ITT+Semiconductors+saj+300+t BC560 NSDU05

    2N3563

    Abstract: se5020 MPS6544 MPS-6544 SE5023 2N347B 2n3600 tis86 MPS6547 2N2857
    Text: NPN Transistors VCES* VCBO V Min Vceo (V) Min v EBO (V) Min 2N2857 TO-72 30 15 2.5 2N3478 TO-72 30 15 ' CB0 Vcr <"A) @ “ Max 11 *>FE @ >C & Vce Min Max (mA) (V) 10 15 30 2 20 1 25 150 150 3 2 VCE(SAT) VßE(SAT) . (V) @ (V) & Max Min Max < "*> Cob/Cfo (PF)


    OCR Scan     		PDF 2N2857 2N347B 2N3600 2N3932 2N3933 2N4259 MPSH34 TIS86 TIS87 MPS6540 2N3563 se5020 MPS6544 MPS-6544 SE5023 MPS6547

    MMBR911L

    Abstract: MPS911
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M PS911 M M B R 911L NPN Silicon High Frequency Transistors . . d e sig ned for lo w noise, w id e d y n a m ic ran g e front-end am p lifiers and low -noise V C O ’s. A v a ila b le in a surface-m oun table plastic package, as w ell as the popular


    OCR Scan     		PDF PS911 O-226AA A/500 MMBR911L MPS911

    2N3702 NATIONAL SEMICONDUCTOR

    Abstract: 2N4917 2n5354 national semiconductor 2n3644 national semiconductor 2N4121 2N5143 MP03906 TIS92 2N3638A 2N3644
    Text: Case Style VcBO V Min VCEO (V) Min Vebo (V) Min 2N2904 TO-5 60 40 5 Ices * Icbo @ Vcb (nA) (V) Max 20 50 By Its 2N2904A TO-5 60 60 40 5 5 10 20 50 50 Manufacturer also Avail. JAN/TX/V Versions 2N2905A also Avail. JAN/TX/V Versions TO-5 2N2906 TO-18 60 60


    OCR Scan     		PDF bS0113Q T-37-Of T-37-01 2N3702 NATIONAL SEMICONDUCTOR 2N4917 2n5354 national semiconductor 2n3644 national semiconductor 2N4121 2N5143 MP03906 TIS92 2N3638A 2N3644

    se5021

    Abstract: 2N3444 2N744 2N3606 PE5025 MPSH30 transistor 2N5134 cl-001 2N3252 2n3600
    Text: This Material Copyrighted By Its Respective Manufacturer NATL SEniCOND 6501130 Sfl {DISCRETE} NATL SEMICOND, ÏËJhSD113D DISCRETE 2 8C 0ID353âS 35388 0/ << £ ti z 'a £« St'S y — œ u< <»'—£ûrEç * £Û u - y f > g CN CO CD — s n< O O c n c


    OCR Scan     		PDF 2N706 T0-18 2N743 2N744 2N753 se5021 2N3444 2N3606 PE5025 MPSH30 transistor 2N5134 cl-001 2N3252 2n3600

    DH3724CN

    Abstract: MPSH30 transistor se5020 MPS6544 2N5189 2N3444 2N3563 2N3646 DH3724CD DH3724
    Text: 3> —3 r* to m zs M r> o SATURATED SWITCHES Continued Type No. Case Stylo 2N5769 TO-92 (92) 2N5772 TO-92 (92) VCES* v CBO (V) Min VcEO (V) Min v EBO (V) Min 40 15 4.5 40 15 15 5 'CES* 'CBO « (nA> Max 400 500 MPS706 TO-92 (92) 15 MPS834 TO-92 (92) 40 MPS2369


    OCR Scan     		PDF 2N706 2N743 2N744 2N753 2N834 2N2369 TIS86 TIS87 MPS6540 MPS6544 DH3724CN MPSH30 transistor se5020 2N5189 2N3444 2N3563 2N3646 DH3724CD DH3724

    2N5306 NATIONAL SEMICONDUCTOR

    Abstract: NSDU45 darlington transistor MPSw45 D40C2 D40K1 NSDU45A
    Text: This NPN Transistors v EBO V Min Ic e s ' 'CBO a (jiA) Max Its Case Style 2N5305 TO-92 (94) 0.1 2N5306 TO-92 (94) 2N5307 *c @ VCE (mA) (V) VCE(SAT) VBE(SAT) . (V) & (V) 0 C Max Min Max ( ) fT (MHz) C0b (pF) Max Min @ lc (mA) Process No. 25 2000 20,000 2


    OCR Scan     		PDF D0370b0 2N5306 NATIONAL SEMICONDUCTOR NSDU45 darlington transistor MPSw45 D40C2 D40K1 NSDU45A

    F B0347

    Abstract: b0349 BC184LB B0679 35S20 BDX330 B0242c f b0349 B0346 BD370-6
    Text: Pro Electron Series in o PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET o Type No. BC107 BC107A Can Styl« TO-18 TO-18 VCES* v CBO (VI M in 50 50 v CEO (V) M in 45 45 v EB0 (V) M in 6 6 •c e s * 'CBO a InA) Max 15* 15* V CB IV) 50 50 H rh Ne 1 kH z *


    OCR Scan     		PDF DD3SS11 F B0347 b0349 BC184LB B0679 35S20 BDX330 B0242c f b0349 B0346 BD370-6

    BD370

    Abstract: BD371 bd372 bc557 package sot23 BC557 sot package bd373 PN3642 NATIONAL bc560 sot National PN930 BC550
    Text: bffr d • bSOHBD General Purpose Amplifiers and Switches continued Devices V CE0(sust) (Volts) Min 45 NPN PNP BC550 fT@l c hpE lc •c (mA) Max Min Max mA (MHz) Min 003T516 mA NF (dB) Max 3.0 2CH P p (Am » Package (mW) ms°c 100 200 800 2.0 300 Typ 10


    OCR Scan     		PDF 003T516 BC550 T0-92 BC635 BC636 BC817 BC807 O-236* BC847 BD370 BD371 bd372 bc557 package sot23 BC557 sot package bd373 PN3642 NATIONAL bc560 sot National PN930 BC550

    pn4122

    Abstract: PN3569 2N4402 2N4403 PN4250 MMBT4402
    Text: bflE D • LS01130 003^520 Tb7 « N S C S General Purpose Amplifiers and Switches continued Devices (Volts) Min 40 ‘ NPN h fE@ lc k V CE0(smt) • ' PN P - - (mA) Max Min M ax NATL SENICON]) (DISCRETE ) fT @ lc mA (M Hz) Min mA MF (dB) Max P D (Amb) Package


    OCR Scan     		PDF LS01130 PN3567 PN3569 TIS97 TN2219A T0-92 O-237 O-236* pn4122 2N4402 2N4403 PN4250 MMBT4402

    BC337 BC547

    Abstract: BC182 BC547 BC547 surface mount T0-92 BT2907A TN2905A BC237 2n5962
    Text: bSD113Q DDa^Sl? 372 * N S C 5 m Devices Volts Min •c Min Max 2N4032 1000 100 2N6554 1500 80 SEniCOND PNP NF (dB) Max Package I’ d (A n ti» (mW) @25°C mA (MHz) Min mA 300 100 150 50 TO-39 800 300 50 75 50 T0-202(55) 1333 M M BT2907A 600 100 300 150


    OCR Scan     		PDF bSD113Q 2N4032 2N6554 BT2907A PN2907A PN3645 PN4249 PN4250A PN4355 TN2905A BC337 BC547 BC182 BC547 BC547 surface mount T0-92 TN2905A BC237 2n5962

    zt145

    Abstract: lt 2904 MMBR911L
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M P S 91 1 M M B R 911 LT1 The RF Line NPN Silicon High-Frequency Transistors . . . designed for low noise, wide dynamic range front-end amplifiers and low-noise VCO’s. Available in a surface-mountable plastic package, as well as


    OCR Scan     		PDF O-226AA A/500 MPS911 MMBR911LT1 zt145 lt 2904 MMBR911L

    BC337/BC327

    Abstract: BC182 BC547 BC237 NATIONAL SEMICONDUCTOR BC327 NATIONAL SEMICONDUCTOR T0-92 BC547 to92 BC237 national 2N4032 2N6554 PN2907A
    Text: •c NATL 50 45 mA Max Min Max 2N4032 1000 100 300 2N6554 NPN 60 SEniCOND (DISCRETE ) (Volts) Min PNP NF (dB) Max 372 • NSCS P d (Arnb) Package (mW) @25°C mA (MHz) Min mA 100 150 50 TO-39 800 1500 80 300 50 75 50 T0-202(55) 1333 MMBT2907A 600 100 300


    OCR Scan     		PDF bS0113D 2N4032 2N6554 T0-202 MMBT2907A O-236* PN2907A PN3645 T0-92 PN4249 BC337/BC327 BC182 BC547 BC237 NATIONAL SEMICONDUCTOR BC327 NATIONAL SEMICONDUCTOR BC547 to92 BC237 national

    c639

    Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
    Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04


    OCR Scan     		PDF 3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN

    MPS911

    Abstract: zt145
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency TVansistors MM BR911LT1 MPS911 . . . designed for low noise, wide dynamic range front-end amplifiers and low-noise VCO’s. Available in a surface-mountable plastic package, as well as


    OCR Scan     		PDF O-226AA A/500 BR911LT1 MPS911 MMBR911LT1 MPS911 zt145

    T0-202

    Abstract: 2n6549
    Text: bflE D Devices Volts Mtn 100 NPN 2N7051 PNP h « @ lc lc Max (Amps) Min 1 20,000 2N7053 1 2N6725 1 mA mA ma 100 1.4 200 200 200 1A 1.5 200 0.2 200 25,000 200 1.0 200 2mA 100 15,000 500 1.5 1A 2mA 100 Max 20,000 20,000 P o (A n k) Package TO-92(94) (Watts)


    OCR Scan     		PDF bS0113Q 2N7051 2N7053 O-226 O-237 2N6725 D40C7 D40K2 T0-202 2n6549