geiger apd
Abstract: SPMMicro3035x13 geiger tube Geiger photomultiplier SPMMicro1020X13 SPMMicro6035X13 helium gas sensor module PDF PIN APD DIODE DESCRIPTION pulse metal detector
Text: SPMMicro Series High Gain APD SPMMicro detectors come in a variety of pin package formats Overview according to footprint requirements, levels of hermeticity, and cooling. These include glass/metal sealed transistor header package types TO46, TO5, TO8 and ceramic packages (TO5
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MIL-STD-750,
1x10-8
geiger apd
SPMMicro3035x13
geiger tube
Geiger
photomultiplier
SPMMicro1020X13
SPMMicro6035X13
helium gas sensor module
PDF PIN APD DIODE DESCRIPTION
pulse metal detector
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PDF
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TO-205AA
Abstract: No abstract text available
Text: SILICON NPN TRANSISTOR 2N2891LL • V BR CEO = 80V (Min). • Hermetic TO5 (TO-205AA) Metal Package. • Ideally Suited For Low Frequency Large Signal Applications (High Voltage). • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
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2N2891LL
O-205AA)
TO-205AA
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRANSISTOR 2N2891LL • V BR CEO = 80V (Min). • Hermetic TO5 (TO-205AA) Metal Package. • Ideally Suited For Low Frequency Large Signal Applications (High Voltage). • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
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2N2891LL
O-205AA)
57mW/Â
-65ent
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NPN Transistor VCEO 1000V
Abstract: BUL54A-TO5
Text: SEME BUL54A-TO5 LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 8.51 0.34 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Designed for use in electronic ballast applications 6.10 (0.240) 6.60 (0.260)
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BUL54A-TO5
O-205AA)
NPN Transistor VCEO 1000V
BUL54A-TO5
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"infrared distance sensor" 1997
Abstract: 5966-1624E Reflective Optical Sensor high resolution spot light size photodiode HP transistor cross reference
Text: Optical Reflective Sensors Technical Data HEDS-1200 High Resolution Infrared Sensor HEDS-1300 Precision Resolution Sensor Features Description • Focused Emitter and Detector in a Single Package • TO5 Package • Binning of Sensors by Photocurrent Ipr
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HEDS-1200
HEDS-1300
HEDS1300
5965-5947E
5966-1624E
"infrared distance sensor" 1997
5966-1624E
Reflective Optical Sensor high resolution
spot light size photodiode
HP transistor cross reference
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PDF
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TO-205AA
Abstract: TO205AA
Text: SILICON NPN TRANSISTOR 2N5786L • Low Saturation Voltage. High Gain At High Current. • Hermetic TO5 TO-205AA Metal Package. • Ideally suited for General Purpose Amplifier Applications. • High Reliability and Space Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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2N5786L
O-205AA)
TO-205AA
TO205AA
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Untitled
Abstract: No abstract text available
Text: SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and
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BUL54A-TO5
O-205AA)
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Reflective Optical Sensor focused
Abstract: light sensor 3 bin Reflective Optical Sensor high resolution transistor a999 HBCS-4999 HBCS-A998 HBCS-A999 HEDS1300 HEDS-1300
Text: Optical Reflective Sensor Technical Data HEDS-1300 Precision Resolution Sensor Features Description • Focused Emitter and Detector in a Single Package • TO5 Package • Binning of Sensors by Photocurrent Ipr The HEDS-1300 sensor is fully integrated modules designed for
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HEDS-1300
5966-1624E
5988-4570EN
Reflective Optical Sensor focused
light sensor 3 bin
Reflective Optical Sensor high resolution
transistor a999
HBCS-4999
HBCS-A998
HBCS-A999
HEDS1300
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRANSISTOR 2N5786L • Low Saturation Voltage. High Gain At High Current. • Hermetic TO5 TO-205AA Metal Package. • Ideally suited for General Purpose Amplifier Applications. • High Reliability and Space Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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2N5786L
O-205AA)
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transistor VCEO 1000V
Abstract: NPN Transistor VCEO 1000V BUL54A-TO5 LE17
Text: SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and
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BUL54A-TO5
O-205AA)
transistor VCEO 1000V
NPN Transistor VCEO 1000V
BUL54A-TO5
LE17
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White Paint
Abstract: 3 pin IR sensor pin connection gold detector circuit free Reflective Optical Sensor high resolution HBCS-4999 HBCS-A998 HBCS-A999 TRansistor 1300 free HEDS-1200 HEDS1300
Text: Optical Reflective Sensors Technical Data HEDS-1200 High Resolution Infrared Sensor HEDS-1300 Precision Resolution Sensor Features Description • Focused Emitter and Detector in a Single Package • TO5 Package • Binning of Sensors by Photocurrent Ipr
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HEDS-1200
HEDS-1300
HEDS1300
5965-5947E
5966-1624E
White Paint
3 pin IR sensor pin connection
gold detector circuit free
Reflective Optical Sensor high resolution
HBCS-4999
HBCS-A998
HBCS-A999
TRansistor 1300 free
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HEDS 1000
Abstract: HBCS-A999 high resolution reflective bar code lens sensor Reflective Optical Sensor focused HEDS-1300 HEDS-1200 HBCS-4999 HBCS-A998 HEDS1200 HEDS1300
Text: H Optical Reflective Sensors Technical Data HEDS-1200 High Resolution Infrared Sensor HEDS-1300 Precision Resolution Sensor Features Description • Focused Emitter and Detector in a Single Package • TO5 Package • Binning of Sensors by Photocurrent Ipr
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HEDS-1200
HEDS-1300
HEDS1300
HEDS 1000
HBCS-A999
high resolution reflective bar code lens sensor
Reflective Optical Sensor focused
HBCS-4999
HBCS-A998
HEDS1200
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NPN Monolithic Transistor Pair
Abstract: Darlington pair IC darlington pair transistor NTE904
Text: NTE904 Integrated Circuit General Purpose Transistor Array Two Isolated Transistors and a Darlington Connected Transistor Pair Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12−Lead TO5 type metal can. Two of the four transistors are connected in the Darlington
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NTE904
NTE904
12-Lead
31-j1
NPN Monolithic Transistor Pair
Darlington pair IC
darlington pair transistor
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Darlington pair IC
Abstract: NTE904 darlington pair transistor NPN Monolithic Transistor Pair
Text: NTE904 Integrated Circuit General Purpose Transistor Array Two Isolated Transistors and a Darlington Connected Transistor Pair Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12–Lead TO5 type metal can. Two of the four transistors are connected in the Darlington
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NTE904
NTE904
Darlington pair IC
darlington pair transistor
NPN Monolithic Transistor Pair
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2N3907
Abstract: 2c415 2N3409 BSV81 BC107-109 2N3209 2N3680 2N3036L 2N6534 2N5252
Text: A E R O S P A C E P R O D U C T S SEMICONDUCTORS FOR HIGH RELIABILITY APPLICATIONS C O N V E N T I O N A L PAC K AG E S TO46 TO72 TO71 TO18 TO5 TO39 TRANSISTORS, MOSFETS, DIODES, VOLTAGE REGULATORS TO46 TO18 cont TO39 (cont) TO39 (cont) TO39 (cont) TO77(cont)
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2N2604-05
2N2907A-T46
2N3485-86
2N3508-09
2N5581-82
BC182-TO46
BC212-TO46
BFY74-77
BSV91
BSX20-21
2N3907
2c415
2N3409
BSV81
BC107-109
2N3209
2N3680
2N3036L
2N6534
2N5252
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2m137
Abstract: 2N1310 2n1908 2N404 transistor 2N130S 2N526 2N1190 2N32 2N160 2N241A
Text: IN TEX/ SEMITRONICS CORP E 7E D • 4fibei a 4fa GGOQETe T -Z 7 -O I 1 discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 alloy-junction germanium transistors ; Trinsittdt: Polarity ■mm.-: im* i Maximum Miximum V Typical Giln HFE Power (W) VCB
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ci24t
N1086
J2N1087
2N169
S50I6Ã
2m137
2N1310
2n1908
2N404 transistor
2N130S
2N526
2N1190
2N32
2N160
2N241A
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2N19A
Abstract: 2N1310 2n1408 2N1305 2N1100 2N404 transistor 2N1008 npn germanium 2N1378 2N1924
Text: T - Z 7 - O I discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 alloy-junction germanium transistors ' T t i n t h i a i : Polarity v 2843A Maximum Power <W Maximum V) VCB VCE Typical G lin HFE Frequency Reip. (MHz) Gau P o h iity Î v t V f * 5" ^
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2K43A
2N44A
2Nto37
2N18M
2N109?
2N169
2N3427
2N662
2N1008
2N1008B
2N19A
2N1310
2n1408
2N1305
2N1100
2N404 transistor
npn germanium
2N1378
2N1924
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JANS2N5154
Abstract: 23302 JANS2N5154L
Text: Micmsemi NPN Transistors Part Number I I I 2N5682 2N5321 2N5320 2N5786 2N5785 2N5784 2N4877 2N5152 2N5152L 2N5154 2N5154L JAN2N5152 JAN2N5152L JAN2N5154 JAN2N5154L JANS2N5152 JANS2N5152L JANS2N5154 JANS2N5154L JANTX2N5152 JANTX2N5152L JANTX2N5154 JANTX2N5154L
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JANS2N5416
Abstract: JANTX2N3868 2N3202 2N3203
Text: Microsemi PNP Transistors Part Number JANTX2N3868 JANTX2N3868S JANTXV2N3868 JANTXV2N3868S 2N4236 2N5147 2N5149 2 N5404 2N5406 2N5405 2N5407 2N3208 2N3202 2N3203 2N3204 2N5679 2N5680 2N5415 JAN2N5415 JANS2N5415 JANS2N5415S JANTX2N5415 JANTXV2N5415 2N5416 JAN2N5416
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OCR Scan
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M5151
2N5151L
2N51S3
JANS2N5416
JANTX2N3868
2N3202
2N3203
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Untitled
Abstract: No abstract text available
Text: GERMANIUM NPN TRANSISTORS Type y' CBO y yEBO y M ax M ax Ki 1 CBO @y c B y M ax M ax y mA Typical Cob Pf M ax fa b MHZ M in 14' 6.0 14' 9.0 Pack Outline Power Dissipation @ 25°C MW NPN 2N356A 2N357 2N357A 2N358 2N358A 30 20 30 20 30 20 20 20 20 20 20 15 20
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OCR Scan
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2N356A
2N357
2N357A
2N358
2N358A
2N366
2N377
2N377A
2N385
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2N1378
Abstract: 2N1924 2N2374 2N1373 2N526 2N508A 2N525 2N1274 2N1305 2N2001
Text: GERMANIUM PNPSMALL SIGNAL TRANSISTORS Type ycBo V Max YFWO V Max Vc, V Max Vc, V 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N580 2N581 2N650 2N651 2N652 2N653 2N654 2N655 2N658 2N659 2N660 2N661 2N662 2N1057 2N1097 2N1098 2N1144 2N1145
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OCR Scan
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2N465
2N466
2N467
2N508
2N508A
2N522
2N524
2N525
2N526
2N527
2N1378
2N1924
2N2374
2N1373
2N1274
2N1305
2N2001
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germanium transistors NPN
Abstract: 2N711 2n2430 2N388 2N1304 2N1892 2N705 2N828 2N1308 2N388A
Text: GERMANIUM NPN TRANSISTORS Type Yc.O V Max YEBO V Max Ki V Max h rc IcBO @ Y CB V Max Typical @/r rn.-i Cob Pf Max fab MHZ Min 14' 6.0 14' 9.0 Pack Outline Power Dissipation @25°C MW NPN 2N356A 2N357 2N357A 2N358 2N358A 30 20 30 20 30 20 20 20 20 20 20 15
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2N356A
2N357
2N357A
2N358
2N358A
2N366
2N377
2N377A
2N385
germanium transistors NPN
2N711
2n2430
2N388
2N1304
2N1892
2N705
2N828
2N1308
2N388A
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2N1855
Abstract: 0E-18 2N1025 2n936
Text: jo m itr o n io r s e m ic o n d u c t o r s s s Sem itronics Corp. silicon transistors silicon small signal transistors general purpose — alloy Typ« Polarity Power Dissipation @ 25°C mW (°C) BV c b o (volts) 2N3298 2N330A 2N923 2N924 2N925 2N926 2N927
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OCR Scan
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2N327A
2N327B
2N328A
2N328B
2N329A
2N3298
2N330A
2N923
2N924
2N925
2N1855
0E-18
2N1025
2n936
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2N217s
Abstract: 2N1028 2N923 2N936 2NJ228 2n1854 2N3346 2N326A 2N16S5 2N1025
Text: JGiïlitrOniCT sem icon d u ctors ä Sem ilronics Corp. silicon transistors silico n sm all signal transistors general purpose — alloy Type Polarity Power Dissipation @ 25°C mW Tj CC) BV c b o (volts) B U ,. D*CE— (volts) (Max.) PNP PNP PNP PNP PNP
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2N327A
2N327B
2N326A
2N328B
2N329A
2N32SB
2N330A
2N923
2N924
2N925
2N217s
2N1028
2N936
2NJ228
2n1854
2N3346
2N16S5
2N1025
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