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    TO5 TRANSISTOR Search Results

    TO5 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TO5 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    geiger apd

    Abstract: SPMMicro3035x13 geiger tube Geiger photomultiplier SPMMicro1020X13 SPMMicro6035X13 helium gas sensor module PDF PIN APD DIODE DESCRIPTION pulse metal detector
    Text: SPMMicro Series High Gain APD SPMMicro detectors come in a variety of pin package formats Overview according to footprint requirements, levels of hermeticity, and cooling. These include glass/metal sealed transistor header package types TO46, TO5, TO8 and ceramic packages (TO5


    Original     		PDF MIL-STD-750, 1x10-8 geiger apd SPMMicro3035x13 geiger tube Geiger photomultiplier SPMMicro1020X13 SPMMicro6035X13 helium gas sensor module PDF PIN APD DIODE DESCRIPTION pulse metal detector

    TO-205AA

    Abstract: No abstract text available
    Text: SILICON NPN TRANSISTOR 2N2891LL • V BR CEO = 80V (Min). • Hermetic TO5 (TO-205AA) Metal Package. • Ideally Suited For Low Frequency Large Signal Applications (High Voltage). • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)


    Original     		PDF 2N2891LL O-205AA) TO-205AA

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRANSISTOR 2N2891LL • V BR CEO = 80V (Min). • Hermetic TO5 (TO-205AA) Metal Package. • Ideally Suited For Low Frequency Large Signal Applications (High Voltage). • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)


    Original     		PDF 2N2891LL O-205AA) 57mW/Â -65ent

    NPN Transistor VCEO 1000V

    Abstract: BUL54A-TO5
    Text: SEME BUL54A-TO5 LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 8.51 0.34 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Designed for use in electronic ballast applications 6.10 (0.240) 6.60 (0.260)


    Original     		PDF BUL54A-TO5 O-205AA) NPN Transistor VCEO 1000V BUL54A-TO5

    "infrared distance sensor" 1997

    Abstract: 5966-1624E Reflective Optical Sensor high resolution spot light size photodiode HP transistor cross reference
    Text: Optical Reflective Sensors Technical Data HEDS-1200 High Resolution Infrared Sensor HEDS-1300 Precision Resolution Sensor Features Description • Focused Emitter and Detector in a Single Package • TO5 Package • Binning of Sensors by Photocurrent Ipr


    Original     		PDF HEDS-1200 HEDS-1300 HEDS1300 5965-5947E 5966-1624E "infrared distance sensor" 1997 5966-1624E Reflective Optical Sensor high resolution spot light size photodiode HP transistor cross reference

    TO-205AA

    Abstract: TO205AA
    Text: SILICON NPN TRANSISTOR 2N5786L • Low Saturation Voltage. High Gain At High Current. • Hermetic TO5 TO-205AA Metal Package. • Ideally suited for General Purpose Amplifier Applications. • High Reliability and Space Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF 2N5786L O-205AA) TO-205AA TO205AA

    Untitled

    Abstract: No abstract text available
    Text: SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and


    Original     		PDF BUL54A-TO5 O-205AA)

    Reflective Optical Sensor focused

    Abstract: light sensor 3 bin Reflective Optical Sensor high resolution transistor a999 HBCS-4999 HBCS-A998 HBCS-A999 HEDS1300 HEDS-1300
    Text: Optical Reflective Sensor Technical Data HEDS-1300 Precision Resolution Sensor Features Description • Focused Emitter and Detector in a Single Package • TO5 Package • Binning of Sensors by Photocurrent Ipr The HEDS-1300 sensor is fully integrated modules designed for


    Original     		PDF HEDS-1300 5966-1624E 5988-4570EN Reflective Optical Sensor focused light sensor 3 bin Reflective Optical Sensor high resolution transistor a999 HBCS-4999 HBCS-A998 HBCS-A999 HEDS1300

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRANSISTOR 2N5786L • Low Saturation Voltage. High Gain At High Current. • Hermetic TO5 TO-205AA Metal Package. • Ideally suited for General Purpose Amplifier Applications. • High Reliability and Space Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF 2N5786L O-205AA)

    transistor VCEO 1000V

    Abstract: NPN Transistor VCEO 1000V BUL54A-TO5 LE17
    Text: SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and


    Original     		PDF BUL54A-TO5 O-205AA) transistor VCEO 1000V NPN Transistor VCEO 1000V BUL54A-TO5 LE17

    White Paint

    Abstract: 3 pin IR sensor pin connection gold detector circuit free Reflective Optical Sensor high resolution HBCS-4999 HBCS-A998 HBCS-A999 TRansistor 1300 free HEDS-1200 HEDS1300
    Text: Optical Reflective Sensors Technical Data HEDS-1200 High Resolution Infrared Sensor HEDS-1300 Precision Resolution Sensor Features Description • Focused Emitter and Detector in a Single Package • TO5 Package • Binning of Sensors by Photocurrent Ipr


    Original     		PDF HEDS-1200 HEDS-1300 HEDS1300 5965-5947E 5966-1624E White Paint 3 pin IR sensor pin connection gold detector circuit free Reflective Optical Sensor high resolution HBCS-4999 HBCS-A998 HBCS-A999 TRansistor 1300 free

    HEDS 1000

    Abstract: HBCS-A999 high resolution reflective bar code lens sensor Reflective Optical Sensor focused HEDS-1300 HEDS-1200 HBCS-4999 HBCS-A998 HEDS1200 HEDS1300
    Text: H Optical Reflective Sensors Technical Data HEDS-1200 High Resolution Infrared Sensor HEDS-1300 Precision Resolution Sensor Features Description • Focused Emitter and Detector in a Single Package • TO5 Package • Binning of Sensors by Photocurrent Ipr


    Original     		PDF HEDS-1200 HEDS-1300 HEDS1300 HEDS 1000 HBCS-A999 high resolution reflective bar code lens sensor Reflective Optical Sensor focused HBCS-4999 HBCS-A998 HEDS1200

    NPN Monolithic Transistor Pair

    Abstract: Darlington pair IC darlington pair transistor NTE904
    Text: NTE904 Integrated Circuit General Purpose Transistor Array Two Isolated Transistors and a Darlington Connected Transistor Pair Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12−Lead TO5 type metal can. Two of the four transistors are connected in the Darlington


    Original     		PDF NTE904 NTE904 12-Lead 31-j1 NPN Monolithic Transistor Pair Darlington pair IC darlington pair transistor

    Darlington pair IC

    Abstract: NTE904 darlington pair transistor NPN Monolithic Transistor Pair
    Text: NTE904 Integrated Circuit General Purpose Transistor Array Two Isolated Transistors and a Darlington Connected Transistor Pair Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12–Lead TO5 type metal can. Two of the four transistors are connected in the Darlington


    Original     		PDF NTE904 NTE904 Darlington pair IC darlington pair transistor NPN Monolithic Transistor Pair

    2N3907

    Abstract: 2c415 2N3409 BSV81 BC107-109 2N3209 2N3680 2N3036L 2N6534 2N5252
    Text: A E R O S P A C E P R O D U C T S SEMICONDUCTORS FOR HIGH RELIABILITY APPLICATIONS C O N V E N T I O N A L PAC K AG E S TO46 TO72 TO71 TO18 TO5 TO39 TRANSISTORS, MOSFETS, DIODES, VOLTAGE REGULATORS TO46 TO18 cont TO39 (cont) TO39 (cont) TO39 (cont) TO77(cont)


    Original     		PDF 2N2604-05 2N2907A-T46 2N3485-86 2N3508-09 2N5581-82 BC182-TO46 BC212-TO46 BFY74-77 BSV91 BSX20-21 2N3907 2c415 2N3409 BSV81 BC107-109 2N3209 2N3680 2N3036L 2N6534 2N5252

    2m137

    Abstract: 2N1310 2n1908 2N404 transistor 2N130S 2N526 2N1190 2N32 2N160 2N241A
    Text: IN TEX/ SEMITRONICS CORP E 7E D • 4fibei a 4fa GGOQETe T -Z 7 -O I 1 discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 alloy-junction germanium transistors ; Trinsittdt: Polarity ■mm.-: im* i Maximum Miximum V Typical Giln HFE Power (W) VCB


    OCR Scan     		PDF ci24t N1086 J2N1087 2N169 S50I6Ã 2m137 2N1310 2n1908 2N404 transistor 2N130S 2N526 2N1190 2N32 2N160 2N241A

    2N19A

    Abstract: 2N1310 2n1408 2N1305 2N1100 2N404 transistor 2N1008 npn germanium 2N1378 2N1924
    Text: T - Z 7 - O I discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 alloy-junction germanium transistors ' T t i n t h i a i : Polarity v 2843A Maximum Power <W Maximum V) VCB VCE Typical G lin HFE Frequency Reip. (MHz) Gau P o h iity Î v t V f * 5" ^


    OCR Scan     		PDF 2K43A 2N44A 2Nto37 2N18M 2N109? 2N169 2N3427 2N662 2N1008 2N1008B 2N19A 2N1310 2n1408 2N1305 2N1100 2N404 transistor npn germanium 2N1378 2N1924

    JANS2N5154

    Abstract: 23302 JANS2N5154L
    Text: Micmsemi NPN Transistors Part Number I I I 2N5682 2N5321 2N5320 2N5786 2N5785 2N5784 2N4877 2N5152 2N5152L 2N5154 2N5154L JAN2N5152 JAN2N5152L JAN2N5154 JAN2N5154L JANS2N5152 JANS2N5152L JANS2N5154 JANS2N5154L JANTX2N5152 JANTX2N5152L JANTX2N5154 JANTX2N5154L


    OCR Scan     		PDF

    JANS2N5416

    Abstract: JANTX2N3868 2N3202 2N3203
    Text: Microsemi PNP Transistors Part Number JANTX2N3868 JANTX2N3868S JANTXV2N3868 JANTXV2N3868S 2N4236 2N5147 2N5149 2 N5404 2N5406 2N5405 2N5407 2N3208 2N3202 2N3203 2N3204 2N5679 2N5680 2N5415 JAN2N5415 JANS2N5415 JANS2N5415S JANTX2N5415 JANTXV2N5415 2N5416 JAN2N5416


    OCR Scan     		PDF M5151 2N5151L 2N51S3 JANS2N5416 JANTX2N3868 2N3202 2N3203

    Untitled

    Abstract: No abstract text available
    Text: GERMANIUM NPN TRANSISTORS Type y' CBO y yEBO y M ax M ax Ki 1 CBO @y c B y M ax M ax y mA Typical Cob Pf M ax fa b MHZ M in 14' 6.0 14' 9.0 Pack Outline Power Dissipation @ 25°C MW NPN 2N356A 2N357 2N357A 2N358 2N358A 30 20 30 20 30 20 20 20 20 20 20 15 20


    OCR Scan     		PDF 2N356A 2N357 2N357A 2N358 2N358A 2N366 2N377 2N377A 2N385

    2N1378

    Abstract: 2N1924 2N2374 2N1373 2N526 2N508A 2N525 2N1274 2N1305 2N2001
    Text: GERMANIUM PNPSMALL SIGNAL TRANSISTORS Type ycBo V Max YFWO V Max Vc, V Max Vc, V 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N580 2N581 2N650 2N651 2N652 2N653 2N654 2N655 2N658 2N659 2N660 2N661 2N662 2N1057 2N1097 2N1098 2N1144 2N1145


    OCR Scan     		PDF 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N1378 2N1924 2N2374 2N1373 2N1274 2N1305 2N2001

    germanium transistors NPN

    Abstract: 2N711 2n2430 2N388 2N1304 2N1892 2N705 2N828 2N1308 2N388A
    Text: GERMANIUM NPN TRANSISTORS Type Yc.O V Max YEBO V Max Ki V Max h rc IcBO @ Y CB V Max Typical @/r rn.-i Cob Pf Max fab MHZ Min 14' 6.0 14' 9.0 Pack Outline Power Dissipation @25°C MW NPN 2N356A 2N357 2N357A 2N358 2N358A 30 20 30 20 30 20 20 20 20 20 20 15


    OCR Scan     		PDF 2N356A 2N357 2N357A 2N358 2N358A 2N366 2N377 2N377A 2N385 germanium transistors NPN 2N711 2n2430 2N388 2N1304 2N1892 2N705 2N828 2N1308 2N388A

    2N1855

    Abstract: 0E-18 2N1025 2n936
    Text: jo m itr o n io r s e m ic o n d u c t o r s s s Sem itronics Corp. silicon transistors silicon small signal transistors general purpose — alloy Typ« Polarity Power Dissipation @ 25°C mW (°C) BV c b o (volts) 2N3298 2N330A 2N923 2N924 2N925 2N926 2N927


    OCR Scan     		PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N3298 2N330A 2N923 2N924 2N925 2N1855 0E-18 2N1025 2n936

    2N217s

    Abstract: 2N1028 2N923 2N936 2NJ228 2n1854 2N3346 2N326A 2N16S5 2N1025
    Text: JGiïlitrOniCT sem icon d u ctors ä Sem ilronics Corp. silicon transistors silico n sm all signal transistors general purpose — alloy Type Polarity Power Dissipation @ 25°C mW Tj CC) BV c b o (volts) B U ,. D*CE— (volts) (Max.) PNP PNP PNP PNP PNP


    OCR Scan     		PDF 2N327A 2N327B 2N326A 2N328B 2N329A 2N32SB 2N330A 2N923 2N924 2N925 2N217s 2N1028 2N936 2NJ228 2n1854 2N3346 2N16S5 2N1025