2n4441 transistor
Abstract: SML1004RGN IRFV360 semelaB irfy430 BUZ10 BUZ50 2N6661 BYV34 Series 2N4441 BYV29 Series
Text: A E R O S P A C E P R O D U C T S SEMICONDUCTORS FOR HIGH RELIABILITY APPLICATIONS M E TA L PA C K A G E S F O R N E W D E S I G N S TO257 TO254 TO258 TO267 Tabless Z-Tab Flexy-Lead P O W E R M O S F E T S , T R A N S I S T O R S , D I O D E S , V O L TA G E R E G U L AT O R S
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O257AA
O257AB*
IP117AG
IP117AHVG
IP117G
IP117HVG
IP120AG-05-12-15
IP120G-05-12-15
IP123AG-05-12-15
2n4441 transistor
SML1004RGN
IRFV360 semelaB
irfy430
BUZ10
BUZ50
2N6661
BYV34 Series
2N4441
BYV29 Series
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2N7224
Abstract: 2N7224U
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 DEVICES LEVELS 2N7224 2N7224U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
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MIL-PRF-19500/592
2N7224
2N7224U
10Vdc,
50Vdc
T4-LDS-0102
2N7224
2N7224U
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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Untitled
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 20 January 2014. INCH-POUND MIL-PRF-19500/595K 20 November 2013 SUPERSEDING MIL-PRF-19500/595J 25 October 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,
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MIL-PRF-19500/595K
MIL-PRF-19500/595J
2N7236,
2N7237,
2N7236U,
2N7237U,
MIL-PRF-19500.
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Untitled
Abstract: No abstract text available
Text: SHD258624 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4975, REV. - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 600 VOLT, 44 AMP, 0.15 RDS ON MOSFET IN A HERMETIC TO-267 PACKAGE. MAX. RATINGS / ELECTRICAL CHARACTERISTICS (AT Tj=25 C UNLESS OTHERWISE SPECIFIED).
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SHD258624
O-267
20VDC,
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APT 1029
Abstract: No abstract text available
Text: APT20M20WLL 200V 65A 0.022Ω POWER MOS 7 R MOSFET TO-267 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT20M20WLL
O-267
APT 1029
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To267
Abstract: No abstract text available
Text: Semelab Aerospace Package Dimensions 20.45 .805 20.20 (.795) 1.80 (.071) 1.25 (.049) 10.23 (.403) 10.10 (.398) 4.19 (.165) 3.95 (.156) 24.15 (.951) 23.60 (.929) 16.90 (.665) 16.40 (.646) 20.60 (0.811) 19.80 (0.780) 19.05 (.750) 12.70 (.500) 4.00 (.157) BSC
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O-267AA
To267
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Untitled
Abstract: No abstract text available
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 2013. MIL-PRF-19500/596K 17 April 2013 SUPERSEDING MIL-PRF-19500/596J 14 April 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,
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MIL-PRF-19500/596K
MIL-PRF-19500/596J
2N7218,
2N7219,
2N7221,
2N7222,
2N7218U,
2N7219U,
2N7221U,
2N7222U,
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 DEVICES LEVELS 2N7268 2N7268U JANSR (100K RAD(Si)
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MIL-PRF-19500/603
2N7268
2N7268U
JANSR2N7268U
JANSF2N7268U
T4-LDS-0121
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 DEVICES LEVELS 2N7269 2N7269U JANSR (100K RAD(Si)
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MIL-PRF-19500/603
2N7269
2N7269U
JANSR2N7269U
JANSF2N7269U
7T4-LDS-0122
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mosfet 600V 100A
Abstract: APT6017WVR
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL MOSFET
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APT6017WVR
T4-LDS-0178
mosfet 600V 100A
APT6017WVR
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2N7261
Abstract: 2N7268 2N7268U JANSF2N7268 JANSF2N7268U 2N7261 equivalent 340A JANSR2N7268 JANSR2N7268U
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 DEVICES LEVELS 2N7268 2N7268U JANSR (100K RAD(Si)
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MIL-PRF-19500/603
2N7268
2N7268U
JANSR2N7268U
JANSF2N7268U
T4-LDS-0121
2N7261
2N7268
2N7268U
JANSF2N7268
JANSF2N7268U
2N7261 equivalent
340A
JANSR2N7268
JANSR2N7268U
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2N7219U
Abstract: 2N7218U 2N7221 2N7221U 2N7219U JANTX 2N7218 2N7219 2N7222 2N7222U 2N7219 JANTXV
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 14 July 2009. MIL-PRF-19500/596J 14 April 2009 SUPERSEDING MIL-PRF-19500/596H 24 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,
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MIL-PRF-19500/596J
MIL-PRF-19500/596H
2N7218,
2N7219,
2N7221,
2N7222,
2N7218U,
2N7219U,
2N7221U,
2N7222U,
2N7219U
2N7218U
2N7221
2N7221U
2N7219U JANTX
2N7218
2N7219
2N7222
2N7222U
2N7219 JANTXV
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APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
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MIL-PRF-19500
ISO9001
APT10026JN
apt1004rbn
APT10050JN
FREDFETs
APT8030jn
APT4020BN
APT5010LVFR
APT5014LVR
arf444
APT10M09LVR
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2N7236
Abstract: 2N7236U
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/595 DEVICES LEVELS 2N7236 2N7236U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
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MIL-PRF-19500/595
2N7236
2N7236U
-10Vdc,
-50Vdc
T4-LDS-0061
2N7236
2N7236U
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 RADIATION HARDENED N-CHANNEL MOSFET
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MIL-PRF-19500/603
2N7394
2N7394U
O-276AC
2N7268U,
2N7269U,
2N7270U,
2N7394U)
T4-LDS-0189
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To267
Abstract: TO-267
Text: APT40M82WVR 44A 0.082Ω 400V POWER MOS V TO-267 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT40M82WVR
O-267
O-267
To267
TO-267
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL MOSFET
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MIL-PRF-19500/592
2N7224
2N7224U
O-276AB)
2N7224U,
2N7225U,
2N7227U,
2N7228U.
T4-LDS-0102
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Untitled
Abstract: No abstract text available
Text: DUAL SCHOTTKY RECTIFIER DIODE SB30-100MSMD • Hermetic Ceramic Surface Mount Package TO-267AB • Low Forward Voltage Drop • Typical applications include Switching Power Supplies, Converters, Free Wheeling Diodes and Reverse Battery Protection • Space Level and High-Reliability Screening Options Available
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SB30-100MSMD
O-267AB)
O-276AB)
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5017BVR
Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
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MIL-PRF-19500
ISO9001
5017BVR
40814
5020BN
1431 T
APT5010LVR
APT1001RBLC
apt10050
APT30M85BVR
APT5020BLC
apt2x101D60
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL MOSFET
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APT6017WVR
T4-LDS-0178
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OM6050SJ
Abstract: OM6052SJ OM6053SJ OM6054SJ high current mosfet
Text: OM6050SJ OM6052SJ OM6054SJ OM6051SJ OM6053SJ OM6Q55SJ HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW R DS 0n High Current, High Voltage 100V Thru 1000V, Up To 100 Amp N-Channel, Size 7 MOSFETs, High Energy Capability FEATURES •
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OM6050SJ
OM6052SJ
OM6054SJ
OM6Q51S
OM6053SJ
OM6Q55SJ
O-267
MIL-S-19500,
OM6051SJ
high current mosfet
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D 92 M - 02 DIODE
Abstract: No abstract text available
Text: • R r M APT10057WVR A d van ced po w er Te c h n o l o g y 1000v 17.3a 0.57a POWER M O S V ‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10057WVR
1000v
O-267
APT10057W
00A/ps)
IL-STD-750
D 92 M - 02 DIODE
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Untitled
Abstract: No abstract text available
Text: OM6050SJ OM6052SJ OM6Û54SJ OM6051SJ OM6Q53SJ OM6055SJ HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS on High C u rren t, High V oltage 100V Th ru 1000V, Up To 100 A m p N -C h a n n e l, S ize 7 M O S F E T s. High E n ergy C a p a b ility
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OM6050SJ
OM6052SJ
OM6051SJ
OM6Q53SJ
OM6055SJ
O-267
MIL-S-19500,
250pA
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