diode cross reference
Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Text: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS
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IGBT 40A
Abstract: igbt 400V 40A fgh40n60uf
Text: FGH40N60UF tm 600V, 40A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low
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FGH40N60UF
FGH40N60UF
IGBT 40A
igbt 400V 40A
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SBR20A120CTFP
Abstract: SBR30A50CT SBR3U40P1 dfn1006 SBR1045CT IEC61215 ITO220AB DFN1006-2 DFN1006H4-2 SBR0220T5
Text: DIO 2040 SBR brochure Final Artwork 25/2/10 10:45 Page 1 SBR THE NEXT GENERATION OF RECTIFIERS. www.diodes.com DIO 2040 SBR brochure (Final Artwork) 25/2/10 10:45 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS
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A1103-04,
SBR20A120CTFP
SBR30A50CT
SBR3U40P1
dfn1006
SBR1045CT
IEC61215
ITO220AB
DFN1006-2
DFN1006H4-2
SBR0220T5
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60A300PT
Abstract: SBR60A300PT
Text: SBR60A300PT 60A SBR Super Barrier Rectifier NEW PRODUCT Features • • • • • • Mechanical Data • Low Forward Voltage Drop Excellent High Temperature Stability Patented Super Barrier Rectifier Technology Soft, Fast Switching Capability Molded Plastic TO-247AB package
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SBR60A300PT
O-247AB
J-STD-020C
MIL-STD-202,
SBR60A300PT
60A300PT
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FGH60N60
Abstract: No abstract text available
Text: FGH60N60SFD tm 600V, 60A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =2.3V @ IC = 60A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new series
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FGH60N60SFD
100oC
FGH60N60
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Untitled
Abstract: No abstract text available
Text: FGH80N60FD tm 600V, 80A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.8V @ IC = 40A • High input impedance Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for
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FGH80N60FD
FGH80N60FD
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Untitled
Abstract: No abstract text available
Text: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat = 1.6V @ IC = 30A • High input impedance Using advanced field stop trench technology, Fairchild’s 1200V
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FGH30N120FTD
FGH30N120FTD
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fgh80n60
Abstract: FGH80N60FDTU FGH80N60FD
Text: FGH80N60FD tm 600V, 80A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating applications where low conduction and
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FGH80N60FD
FGH80N60FD
fgh80n60
FGH80N60FDTU
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welder inverter 160 dc
Abstract: welder mosfet igbt welder FGH30N60LSD FGH30N60LSDTU
Text: FGH30N60LSD tm Features General Description • Low saturation voltage: VCE sat =1.1V @ IC = 30A The FGH30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.This device has the high input impedance of a
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FGH30N60LSD
FGH30N60LSD
welder inverter 160 dc
welder mosfet
igbt welder
FGH30N60LSDTU
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MARKING CODE F133
Abstract: FCH47N60F F133 FCH47N60F-F133 F133 SOT23-5 marking codes fairchild FCH47N60F_F133 F133 MARKING CODE TO-247-AB TO247AB
Text: SuperFET TM FCH47N60F _F133 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
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FCH47N60F
240ns)
MARKING CODE F133
FCH47N60F
F133
FCH47N60F-F133
F133 SOT23-5
marking codes fairchild
FCH47N60F_F133
F133 MARKING CODE
TO-247-AB
TO247AB
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FGH40N65UFDTU
Abstract: FGH40N65UFD igbt 400V 40A 400v 20A ultra fast recovery diode IGBT 40A solar inverter circuit solar inverter FGH40N65
Text: FGH40N65UFD tm 650V, 40A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Solar Inverter, UPS, SMPS and PFC applications where low
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FGH40N65UFD
100oC
FGH40N65UFDTU
FGH40N65UFD
igbt 400V 40A
400v 20A ultra fast recovery diode
IGBT 40A
solar inverter circuit
solar inverter
FGH40N65
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Untitled
Abstract: No abstract text available
Text: GA03JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID @ Tc=150°C hFE Tc=25°C Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area
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GA03JT12-247
O-247AB
GA03JT12
01E-49
00E-27
37E-10
97E-10
00E-3
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Untitled
Abstract: No abstract text available
Text: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier
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GA10SICP12-247
O-247AB
427E-12
1373E-12
0E-03
GA10SICP12
55E-15
71739E-05
40E-10
00E-10
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FGH80N60FD2TU
Abstract: FGH80N60FD2 fgh80n60
Text: FGH80N60FD2 tm 600V, 80A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating applications where low conduction and
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FGH80N60FD2
FGH80N60FD2
FGH80N60FD2TU
fgh80n60
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Untitled
Abstract: No abstract text available
Text: SBR60A45PT 60A SBR SUPER BARRIER RECTIFIER NEW PRODUCT Features • • • • • Mechanical Data • • Low Forward Voltage Drop Excellent High Temperature Stability Patented Super Barrier Rectifier Technology Soft, Fast Switching Capability Lead Free Finish, RoHS Compliant Note 2
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SBR60A45PT
O-247AB
MIL-STD-202,
DS31349
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60A300PT
Abstract: No abstract text available
Text: SBR60A300PT 60A SBR SUPER BARRIER RECTIFIER NEW PRODUCT Features • • • • • Mechanical Data • • Low Forward Voltage Drop Excellent High Temperature Stability Patented Super Barrier Rectifier Technology Soft, Fast Switching Capability Lead Free Finish, RoHS Compliant Note 2
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SBR60A300PT
O-247AB
J-STD-020D
MIL-STD-202,
DS31089
60A300PT
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SK24100C
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDT-2400-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 24 AMP SCHOTTKY BARRIER RECTIFIERS MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF TO-247AB (TO-3PAB) PACKAGE
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SBDT-2400-1B
O-247AB
SK2460C
O-247
97bsbdt24
SK24100C
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDT-6000-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF TO-247AB (TO-3PAB) PACKAGE Low switching noise A C A2 Low forward voltage drop
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SBDT-6000-1B
O-247AB
SK6060C
O-247
6030C
6050C
6060C
6070C
6040C
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12n60c
Abstract: 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB
Text: [ /Title HGT G12N6 0C3D R, HGTP 12N60 C3DR, HGT1 S12N6 0C3D RS /Subject (24A, 600V, Rugged, UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (24A, 600V, Rugged, UFS HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS CT ODU ODUCT
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G12N6
12N60
S12N6
HGTG12N60C3DR,
HGTP12N60C3DR,
HGT1S12N60C3DRS
GTG12N
12n60c
12n60c3d
12N60
g12n60c3d
S12n-6
12N60C3
HGTP12N60C3DR
GTG12N
12n60 dc
TO-247AB
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Untitled
Abstract: No abstract text available
Text: TM UniFET FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Features Description • 48A, 500V, RDS on = 0.105Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDH50N50
FDA50N50
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vishay 1N4007 DO-214AC
Abstract: VS-30BQ060PbF 40MT160KPBF vishay 1N4007 DO-213AB ss32 control pack 70MT160KPBF 20bq030pbf 430 SBL2040CT v40150 MBR10T100
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . V I S H AY I N T E R T E C H N O L O G Y, I N C . 整流器 整流器 选型指南 肖特 基 整 流 器 超快 恢 复整流器 标 准和快 速恢 复整流器 桥式整流器 w w w. v i s h a y. c o m
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VMN-SG2178-1111
vishay 1N4007 DO-214AC
VS-30BQ060PbF
40MT160KPBF
vishay 1N4007 DO-213AB
ss32 control pack
70MT160KPBF
20bq030pbf
430 SBL2040CT
v40150
MBR10T100
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Untitled
Abstract: No abstract text available
Text: FGH30N60LSD tm Features General Description The FGH30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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FGH30N60LSD
FGH30N60LSD
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Untitled
Abstract: No abstract text available
Text: FGH20N60SFD tm 600V, 20A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =2.2V @ IC = 20A • High input impedance Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction
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FGH20N60SFD
FGH20N60SFD
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Untitled
Abstract: No abstract text available
Text: FGH25N120FTDS tm 1200V, 25A Field Stop Trench IGBT Features General Description • High speed switching • Low saturation voltage: VCE sat = 1.60V @ IC = 25A • High input impedance • RoHS compliant Using advanced field stop trench technology, Fairchild’s 1200V
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FGH25N120FTDS
FGH25N120FTDS
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