TO247AB Search Results

diode cross reference

Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS

IGBT 40A

Abstract: igbt 400V 40A fgh40n60uf
Contextual Info: FGH40N60UF tm 600V, 40A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low

SBR20A120CTFP

Abstract: SBR30A50CT SBR3U40P1 dfn1006 SBR1045CT IEC61215 ITO220AB DFN1006-2 DFN1006H4-2 SBR0220T5
Contextual Info: DIO 2040 SBR brochure Final Artwork 25/2/10 10:45 Page 1 SBR THE NEXT GENERATION OF RECTIFIERS. www.diodes.com DIO 2040 SBR brochure (Final Artwork) 25/2/10 10:45 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS

60A300PT

Abstract: SBR60A300PT
Contextual Info: SBR60A300PT 60A SBR Super Barrier Rectifier NEW PRODUCT Features • • • • • • Mechanical Data • Low Forward Voltage Drop Excellent High Temperature Stability Patented Super Barrier Rectifier Technology Soft, Fast Switching Capability Molded Plastic TO-247AB package

FGH60N60

Contextual Info: FGH60N60SFD tm 600V, 60A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =2.3V @ IC = 60A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new series

Contextual Info: FGH80N60FD tm 600V, 80A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.8V @ IC = 40A • High input impedance Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for

Contextual Info: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat = 1.6V @ IC = 30A • High input impedance Using advanced field stop trench technology, Fairchild’s 1200V

fgh80n60

Abstract: FGH80N60FDTU FGH80N60FD
Contextual Info: FGH80N60FD tm 600V, 80A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating applications where low conduction and

welder inverter 160 dc

Abstract: welder mosfet igbt welder FGH30N60LSD FGH30N60LSDTU
Contextual Info: FGH30N60LSD tm Features General Description • Low saturation voltage: VCE sat =1.1V @ IC = 30A The FGH30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.This device has the high input impedance of a

MARKING CODE F133

Abstract: FCH47N60F F133 FCH47N60F-F133 F133 SOT23-5 marking codes fairchild FCH47N60F_F133 F133 MARKING CODE TO-247-AB TO247AB
Contextual Info: SuperFET TM FCH47N60F _F133 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

FGH40N65UFDTU

Abstract: FGH40N65UFD igbt 400V 40A 400v 20A ultra fast recovery diode IGBT 40A solar inverter circuit solar inverter FGH40N65
Contextual Info: FGH40N65UFD tm 650V, 40A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Solar Inverter, UPS, SMPS and PFC applications where low

Contextual Info: GA03JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID @ Tc=150°C hFE Tc=25°C Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area

Contextual Info: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier

FGH80N60FD2TU

Abstract: FGH80N60FD2 fgh80n60
Contextual Info: FGH80N60FD2 tm 600V, 80A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating applications where low conduction and

Contextual Info: SBR60A45PT 60A SBR SUPER BARRIER RECTIFIER NEW PRODUCT Features • • • • • Mechanical Data • • Low Forward Voltage Drop Excellent High Temperature Stability Patented Super Barrier Rectifier Technology Soft, Fast Switching Capability Lead Free Finish, RoHS Compliant Note 2

60A300PT

Contextual Info: SBR60A300PT 60A SBR SUPER BARRIER RECTIFIER NEW PRODUCT Features • • • • • Mechanical Data • • Low Forward Voltage Drop Excellent High Temperature Stability Patented Super Barrier Rectifier Technology Soft, Fast Switching Capability Lead Free Finish, RoHS Compliant Note 2

SK24100C

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDT-2400-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 24 AMP SCHOTTKY BARRIER RECTIFIERS MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF TO-247AB (TO-3PAB) PACKAGE

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDT-6000-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF TO-247AB (TO-3PAB) PACKAGE Low switching noise A C A2 Low forward voltage drop

12n60c

Abstract: 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB
Contextual Info: [ /Title HGT G12N6 0C3D R, HGTP 12N60 C3DR, HGT1 S12N6 0C3D RS /Subject (24A, 600V, Rugged, UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (24A, 600V, Rugged, UFS HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS CT ODU ODUCT

Contextual Info: TM UniFET FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Features Description • 48A, 500V, RDS on = 0.105Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

vishay 1N4007 DO-214AC

Abstract: VS-30BQ060PbF 40MT160KPBF vishay 1N4007 DO-213AB ss32 control pack 70MT160KPBF 20bq030pbf 430 SBL2040CT v40150 MBR10T100
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . V I S H AY I N T E R T E C H N O L O G Y, I N C . 整流器 整流器 选型指南 肖特 基 整 流 器 超快 恢 复整流器 标 准和快 速恢 复整流器 桥式整流器 w w w. v i s h a y. c o m

Contextual Info: FGH30N60LSD tm Features General Description The FGH30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

Contextual Info: FGH20N60SFD tm 600V, 20A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =2.2V @ IC = 20A • High input impedance Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction

Contextual Info: FGH25N120FTDS tm 1200V, 25A Field Stop Trench IGBT Features General Description • High speed switching • Low saturation voltage: VCE sat = 1.60V @ IC = 25A • High input impedance • RoHS compliant Using advanced field stop trench technology, Fairchild’s 1200V