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ROHM Semiconductor R5009FNX MOSFET N-CH 500V 9A TO220FM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	R5009FNX	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	R5009FNX					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Future Electronics	R5009FNX	Bulk		23 Weeks	500	1 - 10 - 100 - 1000 $1.52 10000 $1.52	Buy Now
Quest Components	R5009FNX		78			1 $3.396 10 $3.396 100 $1.8678 1000 $1.8678 10000 $1.8678	Buy Now
CoreStaff Co Ltd	R5009FNX		98			1 $0.913 10 $0.888 100 $0.855 1000 $0.849 10000 $0.849	Buy Now

R5009FNX Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
R5009FNX		ROHM	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 9A TO-220FM		Original	PDF

R5009FNX Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
R5009FNX Abstract: No abstract text available Text: Data Sheet 10V Drive Nch MOSFET R5009FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 2.5 8.0 15.0 Features 1)Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage	Original	R5009FNX O-220FM R1120A R5009FNX	PDF
Untitled Abstract: No abstract text available Text: R5009FNX Datasheet Nch 500V 9A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.84W ID 9A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.	Original	R5009FNX O-220FM R1120A	PDF
R5009FNX Abstract: No abstract text available Text: R5009FNX R5009FNX Datasheet Nch 500V 9A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.84W ID 9A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.	Original	R5009FNX O-220FM R1120A R5009FNX	PDF
Untitled Abstract: No abstract text available Text: R5009FNX Nch 500V 9A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.84W ID 9A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.	Original	R5009FNX O-220FM R1120A	PDF
Untitled Abstract: No abstract text available Text: R5009FNX Nch 500V 9A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.84W ID 9A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.	Original	R5009FNX O-220FM R1120A	PDF
RSD130P10 Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND Text: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬Ǆ 01 MOSFET Contents	Original	RUM002N02 RZM002P02 RUE002N02 RZE002P02 RUM002N05 RUE002N05 RZF013P01 RZL025P01 RZR020P01 RW1A013ZP RSD130P10 rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND	PDF
RSD130P10 Abstract: RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200 Text: 2010 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.	Original	5V/60V R0039A 52P6214E RSD130P10 RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200	PDF