2SB1391
Abstract: 2SB791 DSA003644
Text: 2SB1391 Silicon PNP Triple Diffused ADE-208-871 Z 1st. Edition Sep. 2000 Application Power switching Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter 2 kΩ (Typ) 200 Ω (Typ) 3 2SB1391 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings
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2SB1391
ADE-208-871
O-220FM
2SB1391
2SB791
DSA003644
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Hitachi DSA002751
Abstract: No abstract text available
Text: 2SB1391 Silicon PNP Triple Diffused Application Power switching Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 2 kΩ Typ 200 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25GC) Item Symbol Ratings Unit Collector to base voltage VCBO –120 V
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2SB1391
O-220FM
D-85622
Hitachi DSA002751
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Untitled
Abstract: No abstract text available
Text: 2SB139100MA 2SB139100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB139100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical
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2SB139100MA
2SB139100MA
002mA@
390mm;
295mm;
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2SB1391
Abstract: 2SB791 Hitachi DSA00385
Text: 2SB1391 Silicon PNP Triple Diffused Application Power switching Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter 2 kΩ Typ 200 Ω (Typ) 3 2SB1391 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –120
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2SB1391
O-220FM
2SB1391
2SB791
Hitachi DSA00385
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Hitachi DSA002787
Abstract: No abstract text available
Text: 2SB1391 Silicon PNP Triple Diffused Application Power switching Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter 2 kΩ Typ 200 Ω (Typ) 3 2SB1391 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –120
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2SB1391
O-220FM
D-85622
Hitachi DSA002787
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2SB1391
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SB1391 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION
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2SB1391
O-220Fa
O-220Fa)
-80mA
-100V;
2SB1391
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Untitled
Abstract: No abstract text available
Text: 2SB139100MA 2SB139100MA 肖特基二极管芯片 描述 Ø 2SB139100MA是采用硅外延工艺制造的肖特基 二极管芯片； Ø 损耗功率小，效率高； Ø 高ESD能力； Ø 高抗浪涌电流能力； Ø 具有瞬态反应保护能力的保护环结构；
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2SB139100MA
2SB139100MAYY
593dice/wafer
DO-201AD
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2SB1391
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SB1391 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION
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2SB1391
O-220Fa
O-220Fa)
-80mA
-100V;
2SB1391
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silan
Abstract: No abstract text available
Text: 2SB139100MA 2SB139100MA SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB139100MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø High ESD capability; Ø High surge capability; Ø
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2SB139100MA
2SB139100MA
2SB139100MAYY
593dice/wafer
silan
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STK411-230E
Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
UPC2581V
PAL005A
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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D-85622
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7054F
Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver
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2sc4537
2sc454.
2sc4591
2sc4592
2sc4593
2sc460.
2sc4628
2sc4629
2sc4643
2sc4680
7054F
BC564A
HA13563
AC123A
HITACHI microcontroller H8 534 manual
IC 74LS47
AC538
BC245A
2SK3235
HA13557
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2SB1391
Abstract: 2SB791
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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D-85622
2SB1391
2SB791
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1002ds
Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2
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2SC5998"
C5139
2SC5247
2SC5907
2SD1504
2SJ361
2SK439
2SK494
2SK3349
BCR5KM-12L
1002ds
6020v4
TRANSISTOR BJ 131-6
2SC 8550
transistor 2sc1417
HITACHI 08122B
transistor h945
6030v4
2SC 8050
25aaj
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2SB1391
Abstract: 2SB791
Text: HITACHI 2SB1391-Silicon PNP Triple Diffused Power Switching Absolute M axim um Ratings Ta = 25°C Hem Symbol Rating Unit Collector to base voltage VCB0 -1 2 0 V Collector to emitter voltage VCE0 -1 2 0 V Emitter to base voltage VEB0 -7 V Collector current
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2SB1391-
O-220
2SB1391
2SB1391
2SB791
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Untitled
Abstract: No abstract text available
Text: 2SB1391 Silicon PNP Triple Diffused HITACHI Application P o w e r s w itc h in g Outline T O -2 2 0 F M 2 A 1 . 1 Base |'o 2. C o lle c to r 3. E m itte r 1; 2 3 kQ 200 Q T y p (T yp ) ¿ 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit
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2SB1391
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Untitled
Abstract: No abstract text available
Text: i HITACHI 2SB1391-Silicon PNP Triple Diffused Power Switching Absolute Maximum Ratings Ta = 2 5 °Q Item Sym b ol R atin g Unit Collector to base voltage V CBO -120 V Collector to emitter voltage Vcg 0 -1 2 0 V Emitter to base voltage V EB0 -7 V Collector current
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2SB1391---------Silicon
2SB1391
2SBD91
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2SB536A
Abstract: 2SA1301 TOSHIBA 2SB1320A 2SA1356 2SB1318 2SA1624 2SB1242 2sa1133 2SA1426 2SA1431
Text: - 2SB 2SB 2SB 2SB 2SB 1321 ^ 1322 ^ 1323 1324 ^ 2SB 2SB 2SB 2SB 2SB 2SB 2SB 1326 1328 1329 , 1330 * 1331 1332 1333 / 2SB 2SB 2SB 2SB 2SB 2SB 1336 1337 1338 1339 1340 1341 *• 2SB 1345 2SB 1346 2SB 1347 SANYO B M TOSHIBA NEC ÏL HITACHI * ± a FUJITSU fâ
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2SB13n7M
2SA1782
2SB1320A
2SA1561
2SA1703
2SA1426
2SA1559
2SB1242
2SB536A
2SA1301 TOSHIBA
2SB1320A
2SA1356
2SB1318
2SA1624
2SB1242
2sa1133
2SA1426
2SA1431
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2SA1385
Abstract: 2SB1256 2SB892 2SA1020 2SB1015 2SA1266 2SA1770 2SB1441 25B1142 2sb111
Text: m « Type No. 2SB 1426 , 2SB 1427 2SB 1428 — 2SB 1429 2SB 1430 2SB 1431 2SB 1432 ^ 2SB 1433 2SB 1434 2SB 1435 2SB 1436 2SB 1437 2SB 1438 2SB 1439 2SB 1440 2SB 1441 2SB 1442 2SB 1443 2SB 1444 2SB 1445 2SB 1446 2SB 1447 2SB 1448 2SB 1449 2SB 1450 2SB 1451
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2SB1395
2SA1266
2SB1446
2SB1434
2SA1363
2SB892
2SB1117
2SB1317
2SB913
2SA1385
2SB1256
2SB892
2SA1020
2SB1015
2SA1770
2SB1441
25B1142
2sb111
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2SB1099
Abstract: 2SB615 nec 2SB1099 2SB886 B676 1086a 1091 2S8834 2sb536 TOSHIBA 2SB613
Text: 62 - « tt m Type No. € Manuf. a SANYO NEC 2SB601 □—A 2SA1706 2SB 1077 a ti 2SB880 2SB676 2SB 1078 XL 2SB886 2SB673 2SB 1078K xz: 2SB 1080 a a 2SB 1085 □— a 2SB 1085A 2SB 1086 ^ & 2SB632K 2SA962A 2SA1011 2SA968 □— A 2SA1011 □— A 2SA1249 2SB 1Q86A
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2SA1706
2SB880
2SB676
2SB601
2SB950
2SB1341
2SB886
2SB673
2SB1108
2SB1343
2SB1099
2SB615
nec 2SB1099
B676
1086a
1091
2S8834
2sb536 TOSHIBA
2SB613
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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2sk1058 equivalent
Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,
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O220F
SP-10
SP-12
SP-12TA
1560D
2sk1058 equivalent
MBM300BS6
Hitachi MOSFET
2SK1270
transistor 2sk 12
2sk1645
2SK975 equivalent
equivalent transistor 2sk
2SK1058 MOSFET APPLICATION NOTES
2SC297
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2SB1099
Abstract: 1115a 2sB1098 NEC 2SA1441 2SB873 1116a 2SB927 2SA1770 2SA1283 nec 2SB1099
Text: - « Type No. tt « Mamif. 2SB 1114 -• 2SB 1115 „ Hi TOSHIBA Z £ MITSUBISHI ZSA1213 2SB10Q1 2SB956 2SB1188 2SB1122 2SA12Q1 2SB1002 2SB766A 2SB1260 2SA1213 2SB1Q02 2SB766A 2SA1315 2SB1059 2SB621A 2SA1283 2SB1459 2SB621A 2SA1283 S S « 2SB 1117 ^ S « 2SB 1118
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2SB1121
2SA1213
2SB1001
2SB956
2SB1188
2SB1122
2SA1201
2SB1002
2SB766A
2SB1260
2SB1099
1115a
2sB1098 NEC
2SA1441
2SB873
1116a
2SB927
2SA1770
2SA1283
nec 2SB1099
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2SB1370
Abstract: 2SB1376 2sd2083 2sb1383 2SD2012 2SB1369 2SB1371 2SB1372 2SB1373 2SB1375
Text: - 88 - T a = 2 5 U *EP(âTc=25£C A, ft m S -A. v'cBO VcEO (V) (V) ÍCCDC) (A) n (W) m n ft T (max) ( jw A) (W) (min) uh t (max) (V? te Vce (V) (Ta=25cC ) Ic/I e (A) OEPiitypfil] • BE.\oak/ (max) (V) (V) Ic (A) 1b (A) 2SB1369 □— A G -60 -60 -3 40
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2SB1369
2SB1370
2SB1371
2SB1372
2SB1373
2SB1375
2SB1376
61393A
09K/0.
2SD2099
2SB1370
2sd2083
2sb1383
2SD2012
2SB1375
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