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    TO-92 MOSFET 1A Search Results

    TO-92 MOSFET 1A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    TO-92 MOSFET 1A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFETS CJV01N60 N-Channel Power MOSFET TO-92 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading


    Original     		PDF CJV01N60

    stq1ne10l

    Abstract: Q1NE10L stq1ne10l-ap
    Text: STQ1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID STQ1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged tecnology ■ Low threshold drive TO-92


    Original     		PDF STQ1NE10L STQ1NE10L STQ1NE10L-AP Q1NE10L

    2N7000 MOSFET

    Abstract: 2n7000 equivalents 2N7000 2N7002 MARKING 2n7000 equivalent 2N7000G 2N7002 JESD97
    Text: 2N7000 2N7002 N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID 2N7000 60V <5Ω (@10V) 0.35 2N7002 60V <5Ω (@10V) 0.20 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Description This MOSFET is the second generation of


    Original     		PDF 2N7000 2N7002 OT23-3L OT23-3L 2N7000 MOSFET 2n7000 equivalents 2N7000 2N7002 MARKING 2n7000 equivalent 2N7000G 2N7002 JESD97

    Untitled

    Abstract: No abstract text available
    Text: SJV01N60 1A , 600V , RDS ON 10 mΩ Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 DESCRIPTION The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking


    Original     		PDF SJV01N60 13-Sep-2011

    SJV01N65B

    Abstract: MosFET
    Text: SJV01N65B 1A , 650V , RDS ON 14Ω Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 DESCRIPTION The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking


    Original     		PDF SJV01N65B circ00V 07-May-2013 SJV01N65B MosFET

    mosfet equivalent

    Abstract: 0401L MTN0401LA3
    Text: CYStech Electronics Corp. Spec. No. : C324A3 Issued Date : 2003.07.24 Revised Date : 2004.02.13 Page No. : 1/4 N-CHANNEL MOSFET MTN0401LA3 Description The MTN0401LA3 is a N-channel enhancement-mode MOSFET. Equivalent Circuit Outline MTN0401LA3 TO-92 G：Gate


    Original     		PDF C324A3 MTN0401LA3 MTN0401LA3 UL94V-0 mosfet equivalent 0401L

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 1 1 TO-92 SOT-223  DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged


    Original     		PDF OT-223 O-220 O-220F O-251 O-251L QW-R502-579

    ST2N

    Abstract: 2n7000 equivalents 2N7002 2n7000 2N7002 MARKING 2N7000G JESD97
    Text: 2N7000 2N7002 N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET Features Type VDSS RDS on ID 2N7000 60V <5Ω (@10V) 0.35 2N7002 60V <5Ω (@10V) 0.20 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application ■ Switching applications


    Original     		PDF 2N7000 2N7002 OT23-3L OT23-3L ST2N 2n7000 equivalents 2N7002 2n7000 2N7002 MARKING 2N7000G JESD97

    to-92 mosfet 1A

    Abstract: power mosfet to92
    Text: UNISONIC TECHNOLOGIES CO., LTD UK1398 Power MOSFET N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING 1 „ DESCRIPTION TO-92 The UTC UK1398 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in


    Original     		PDF UK1398 UK1398 OT-23 UK1398L-AE3-R UK1398G-AE3-R UK1398L-T92-B UK1398G-T92-B UK1398L-T92-K UK1398G-T92-K UK1398L-T92-R to-92 mosfet 1A power mosfet to92

    mosfet to92 low voltage

    Abstract: power mosfet to92 high current to-92 mosfet 1A
    Text: UNISONIC TECHNOLOGIES CO., LTD UK1398 Power MOSFET N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING 1 „ DESCRIPTION TO-92 The UTC UK1398 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


    Original     		PDF UK1398 UK1398 OT-23 UK1398L-AE3-R UK1398G-AE3-R UK1398L-T92-B UK1398G-T92-B UK1398L-T92-K UK1398G-T92-K UK1398L-T92-R mosfet to92 low voltage power mosfet to92 high current to-92 mosfet 1A

    STQ1NE10L-AP

    Abstract: q1ne10l Q1NE10
    Text: STQ1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID STQ1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology ■ Low threshold drive


    Original     		PDF STQ1NE10L STQ1NE10L STQ1NE10L-AP q1ne10l Q1NE10

    Q1NE10L

    Abstract: JESD97 STQ1NE10L STQ1NE10L-AP d400S Q1NE10
    Text: STQ1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID STQ1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology ■ Low threshold drive


    Original     		PDF STQ1NE10L Q1NE10L JESD97 STQ1NE10L STQ1NE10L-AP d400S Q1NE10

    Coilcraft Taiwan

    Abstract: max731
    Text: 19-0034; Rev 0; 5/92 MAX731 Evaluation Kit _Features ♦ Load Currents Guaranteed to 200mA with No External MOSFET ♦ Step-Up from a 2.0V Input ♦ 170kHz High-Frequency Current-Mode PWM ♦ 82% to 87% Typical Efficiencies at Full Load


    Original     		PDF MAX731 MAX731 200mA. Coilcraft Taiwan

    1N5817

    Abstract: ITS220 MAX731 MAX731CPA MAX731EVKIT-DIP MAXC001 PCH-27-223
    Text: 19-0034; Rev 0; 5/92 MAX731 Evaluation Kit _Features ♦ Load Currents Guaranteed to 200mA with No External MOSFET ♦ Step-Up from a 2.0V Input ♦ 170kHz High-Frequency Current-Mode PWM ♦ 82% to 87% Typical Efficiencies at Full Load


    Original     		PDF MAX731 200mA 170kHz MAX731EVKIT-DIP MAX731CPA MAXC001 1N5817 ITS220 MAX731CPA MAX731EVKIT-DIP MAXC001 PCH-27-223

    1hnk60

    Abstract: d1nk60 t4 MARKING SOT223 stn1hnk60 STD1NK60 STQ1HNK60R-AP STQ1HNK60R STD1NK60-1 STD1NK60T4 1HNK60R
    Text: STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET Table 1: General Features TYPE STD1NK60 STD1NK60-1 STQ1HNK60R STN1HNK60 • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on 600 600 600 600


    Original     		PDF STD1NK60 STD1NK60-1 STQ1HNK60R STN1HNK60 DPAK/TO-92/IPAK/SOT-223 STD1NK60 STQ1HNK60R 1hnk60 d1nk60 t4 MARKING SOT223 stn1hnk60 STQ1HNK60R-AP STD1NK60-1 STD1NK60T4 1HNK60R

    Si9122

    Abstract: No abstract text available
    Text: 500-kHz DC/DC Converter with Secondary Synchronous Rectifier Timing FEATURES • • • • Input voltage of 12 to 72 V Up to 92% efficiency Integrated primary MOSFET drivers Secondary synchronous rectifier control with programmable deadtime delay • Programmable oscillator frequency up to 500 kHz


    Original     		PDF 500-kHz Si9122 Si9122 MLP65 20-pin VSA-PT0028-0407

    Untitled

    Abstract: No abstract text available
    Text: STQ1NE10L N-CHANNEL 100V - 0.3 Ω - 1A TO-92 STripFET POWER MOSFET TYPE STQ1NE10L • ■ ■ ■ ■ VDSS RDS on ID 100 V <0.4 Ω 1A TYPICAL RDS(on) = 0.3 Ω EXCEPTIONAL HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY LOW THRESHOLD DRIVE


    Original     		PDF STQ1NE10L

    Untitled

    Abstract: No abstract text available
    Text: STQ1NE10L N-CHANNEL 100V - 0.3 Ω - 1A TO-92 STripFET POWER MOSFET TYPE STQ1NE10L • ■ ■ ■ ■ VDSS RDS on ID 100 V <0.4 Ω 1A TYPICAL RDS(on) = 0.3 Ω EXCEPTIONAL HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY LOW THRESHOLD DRIVE


    Original     		PDF STQ1NE10L

    STQ1NE10L

    Abstract: schematic diagram dc-dc transistor c 458
    Text: STQ1NE10L N-CHANNEL 100V - 0.3 Ω - 1A TO-92 STripFET POWER MOSFET TYPE STQ1NE10L • ■ ■ ■ ■ VDSS RDS on ID 100 V <0.4 Ω 1A TYPICAL RDS(on) = 0.3 Ω EXCEPTIONAL HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY LOW THRESHOLD DRIVE


    Original     		PDF STQ1NE10L STQ1NE10L schematic diagram dc-dc transistor c 458

    N-Channel mosfet 600v 1a

    Abstract: 600V 2A MOSFET N-channel power mosfet 600v transistor 600v. 1a. to 92 mosfet 600v Advanced Power MOSFET DIODE 3A 600V single HIGH SPEED POWER MOSFET mosfet 1A to 92 100V single n-channel
    Text: TSM1N60S 600V N-Channel Power MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original     		PDF TSM1N60S TSM1N60S N-Channel mosfet 600v 1a 600V 2A MOSFET N-channel power mosfet 600v transistor 600v. 1a. to 92 mosfet 600v Advanced Power MOSFET DIODE 3A 600V single HIGH SPEED POWER MOSFET mosfet 1A to 92 100V single n-channel

    TSM1N60S

    Abstract: TSM1N60SCT
    Text: TSM1N60S 600V N-Channel Power MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original     		PDF TSM1N60S TSM1N60S TSM1N60SCT

    LP0701

    Abstract: LP0701LG LP0701N3 LP0701ND
    Text: LP0701 Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-92 SO-8 Die -16.5V 1.5Ω -1.25A -1.0V LP0701N3 LP0701LG LP0701ND Advanced MOS Technology Features


    Original     		PDF LP0701 LP0701N3 LP0701LG LP0701ND -300mA 238pF 115pF LP0701 LP0701LG LP0701N3 LP0701ND

    LP0701

    Abstract: LP0701LG LP0701N3 LP0701ND
    Text: LP0701 Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-92 SO-8 Die -16.5V 1.5Ω -1.25A -1.0V LP0701N3 LP0701LG LP0701ND Features Advanced MOS Technology


    Original     		PDF LP0701 LP0701N3 LP0701LG LP0701ND -300mA 238pF 115pF LP0701 LP0701LG LP0701N3 LP0701ND

    to-92 mosfet 1A

    Abstract: LP0701N3 low vgs mosfet to-92 mosfet 1A to-92 LP0701 LP0701LG LP0701ND
    Text: LP0701 LP0701 Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-92 SO-8 Dice -16.5V 1.5Ω -1.25A -1.0V LP0701N3 LP0701LG LP0701ND 7 Advanced MOS Technology


    Original     		PDF LP0701 LP0701N3 LP0701LG LP0701ND O-92/SO-8 to-92 mosfet 1A LP0701N3 low vgs mosfet to-92 mosfet 1A to-92 LP0701 LP0701LG LP0701ND