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    TSM1N60SCT Search Results

    TSM1N60SCT Datasheets (3)

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    TSM1N60SCT Taiwan Semiconductor 600V N-Channel Power MOSFET Original PDF
    TSM1N60SCTA3 Taiwan Semiconductor N-Channel Power Enhancement Mode MOSFET Original PDF
    TSM1N60SCTB0 Taiwan Semiconductor N-Channel Power Enhancement Mode MOSFET Original PDF

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    TSM1N60S

    Abstract: TSM1N60SCT
    Text: TSM1N60S 600V N-Channel Power MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original     		TSM1N60S TSM1N60S TSM1N60SCT PDF

    N-Channel mosfet 600v 1a

    Abstract: 600V 2A MOSFET N-channel power mosfet 600v transistor 600v. 1a. to 92 mosfet 600v Advanced Power MOSFET DIODE 3A 600V single HIGH SPEED POWER MOSFET mosfet 1A to 92 100V single n-channel
    Text: TSM1N60S 600V N-Channel Power MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original     		TSM1N60S TSM1N60S N-Channel mosfet 600v 1a 600V 2A MOSFET N-channel power mosfet 600v transistor 600v. 1a. to 92 mosfet 600v Advanced Power MOSFET DIODE 3A 600V single HIGH SPEED POWER MOSFET mosfet 1A to 92 100V single n-channel PDF

    3A, 50V BRIDGE

    Abstract: TSM1N60S TSM1N60SCT
    Text: TSM1N60S N-Channel Power Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Drain 3. Source VDS = 600V ID = 0.3A RDS on , Vgs @ 10V, Ids @ 0.3A = 11Ω General Description The TSM1N60s is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original     		TSM1N60S TSM1N60s 300uS, 3A, 50V BRIDGE TSM1N60SCT PDF