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    TO-66 TRANSISTOR Search Results

    TO-66 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TO-66 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RA30H0608M

    Abstract: RA30H0608M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H0608M RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE RADIO DESCRIPTION The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 66- to


    Original     		PDF RA30H0608M 66-88MHz RA30H0608M 30-watt 88-MHz RA30H0608M-101

    2SA764

    Abstract: 2SC1444 2SC144
    Text: Inchange Semiconductor Product Specification 2SA764 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Complement to type 2SC1444 APPLICATIONS ·Desinged for general-purpose power amplifier and applications


    Original     		PDF 2SA764 2SC1444 -10mA 2SA764 2SC1444 2SC144

    2SC1444

    Abstract: 2SA764
    Text: SavantIC Semiconductor Product Specification 2SA764 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Complement to type 2SC1444 APPLICATIONS ·Desinged for general-purpose power amplifier and applications


    Original     		PDF 2SA764 2SC1444 -10mA 2SC1444 2SA764

    Untitled

    Abstract: No abstract text available
    Text: ADC11L066 11-Bit, 66 MSPS, 450 MHz Bandwidth A/D Converter with Internal Sample-and-Hold General Description Features The ADC11L066 is a monolithic CMOS analog-to-digital converter capable of converting analog input signals into 11-bit digital words at 66 Megasamples per second MSPS , minimum, with typical operation possible up to 80 MSPS. This


    Original     		PDF ADC11L066 11-Bit, 11-bit

    RA07M0608M

    Abstract: RA07M0608M-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M0608 RA07M0608M 07M0608M RoHS Compliance ,66-88MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M0608M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 66- to 88-MHz


    Original     		PDF RA07M0608M 07M0608 66-88MHz RA07M0608M 88-MHz RA07M0608M-101

    2SA766

    Abstract: 2SC1450
    Text: JMnic Product Specification 2SA766 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・High power dissipation ・Complement to type 2SC1450 APPLICATIONS ・Line-operated vertical deflection output ・Medium power amplifier PINNING see Fig.2


    Original     		PDF 2SA766 2SC1450 2SA766 2SC1450

    2SC783

    Abstract: 2SA483 2SC7
    Text: JMnic Product Specification 2SA483 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Complement to type 2SC783 ・High voltage: VCEO=-150V min APPLICATIONS ・Power amplifier applications ・Vertical output applications PINNING(see Fig.2)


    Original     		PDF 2SA483 2SC783 -150V -50mA -150V; 2SC783 2SA483 2SC7

    2SA764

    Abstract: 2SC1444
    Text: JMnic Product Specification 2SA764 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Low collector saturation voltage ・Complement to type 2SC1444 APPLICATIONS ・Desinged for general-purpose power amplifier and applications PINNING see Fig.2


    Original     		PDF 2SA764 2SC1444 -10mA 2SA764 2SC1444

    2N6294

    Abstract: 2N6296 2N6295
    Text: Product Specification www.jmnic.com 2N6294 2N6295 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・DARLINGTON ・Complement to type 2N6296/6297 APPLICATIONS ・For high gain amplifier and medium speed switching applications PINNING See Fig.2


    Original     		PDF 2N6294 2N6295 2N6296/6297 2N6294 2N6296 2N6295

    2N6297

    Abstract: 2N6296 2N6298
    Text: Product Specification www.jmnic.com 2N6296 2N6297 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・DARLINGTON ・Complement to type 2N6294/6295 APPLICATIONS ・For high gain amplifier and medium speed switching applications PINNING See Fig.2


    Original     		PDF 2N6296 2N6297 2N6294/6295 2N6296 2N6298 2N6297 2N6298

    2N6465

    Abstract: npn 100v 1.5a 2N6466 2N6467 2N6468 2N646 v130100
    Text: Inchange Semiconductor Product Specification 2N6465 2N6466 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Complement to type 2N6467 2N6468 APPLICATIONS ・For use in audio amplifier applications PINNING see Fig.2


    Original     		PDF 2N6465 2N6466 2N6467 2N6468 2N6465 npn 100v 1.5a 2N6466 2N6468 2N646 v130100

    2N6298

    Abstract: 2N6299
    Text: Product Specification www.jmnic.com 2N6298 2N6299 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・DARLINGTON ・Low collector saturation voltage ・Complement to type 2N6300/6301 APPLICATIONS ・General purpose power amplifier and low frequency switching applications


    Original     		PDF 2N6298 2N6299 2N6300/6301 2N6298 2N6299

    2N6263

    Abstract: 2N6264
    Text: SavantIC Semiconductor Product Specification 2N6263 2N6264 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·A wide variety of medium-to-high power, high-voltage applications


    Original     		PDF 2N6263 2N6264 2N6263 2N6264

    2SA766

    Abstract: 2SC1450
    Text: SavantIC Semiconductor Product Specification 2SA766 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·High power dissipation ·Complement to type 2SC1450 APPLICATIONS ·Line-operated vertical deflection output ·Medium power amplifier PINNING see Fig.2


    Original     		PDF 2SA766 2SC1450 2SA766 2SC1450

    2N6260

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2N6260 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Low saturation voltage ・Wide safe operating area APPLICATIONS ・Power switching circuits ・High-fidelity amplifers ・Solenoid drivers


    Original     		PDF 2N6260 2N6260

    2n5955

    Abstract: 2N5954 2N5956 2N6374 2N6372 2N6373
    Text: Product Specification www.jmnic.com 2N5954 2N5955 2N5956 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Low collector-emitter saturation voltage ・Excellent safe operating area ・Complement to type 2N6372 2N6373 2N6374 APPLICATIONS ・Designed for driver circuits,switching


    Original     		PDF 2N5954 2N5955 2N5956 2N6372 2N6373 2N6374 2N5954 2N5955 2N5956 2N6374

    2N6465

    Abstract: 2N6467 2N6466 2N6468
    Text: SavantIC Semiconductor Product Specification 2N6465 2N6466 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Complement to type 2N6467 2N6468 APPLICATIONS ·For use in audio amplifier applications PINNING see Fig.2


    Original     		PDF 2N6465 2N6466 2N6467 2N6468 2N6465 2N6466 2N6468

    2N6495

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2N6495 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Designed for switching and wideband amplifier applications


    Original     		PDF 2N6495 2N6495

    2N6535

    Abstract: No abstract text available
    Text: Product Specification www.jmnic.com 2N6535 Silicon Power Transistors DESCRIPTION ・DARLINGTON ・With TO-66 package APPLICATIONS ・Power switching ・Hammer drivers ・Series and shunt regulators ・Audio amplifiers PINNING See Fig.2 PIN DESCRIPTION 1


    Original     		PDF 2N6535 2N6535

    2N5601

    Abstract: 2N5597 2N5599 2N5603
    Text: Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector-emitter saturation voltage APPLICATIONS ・For high frequency power amplifier ;


    Original     		PDF 2N5597 2N5599 2N5601 2N5603 2N5597 2N5599/5601 2N5603

    2N5597

    Abstract: 2N5601 2N5599 2N5603
    Text: Inchange Semiconductor Product Specification 2N5597 2N5599 2N5601 2N5603 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For high frequency power amplifier ;


    Original     		PDF 2N5597 2N5599 2N5601 2N5603 2N5597 2N5599/5601 2N5603

    zo 103 ma

    Abstract: BFT66 BFt 65 BFT 24 045912E Q62702-F456 RI-60 Q62702-F457 BFt 66 BFT67
    Text: BFT 66 BFT 67 Extrem rauscharm e N P N -S iliziu m -B re itb a n d tra n s is to re n BFT 66 und BFT 67 sind epitaktische NPN-Silizium-Planar-UHF-Transistoren im Gehäuse 18 A4 DIN 41 876 T O -7 2 für Vorstufenanwendungen in extrem rauscharmen Breitband­


    OCR Scan     		PDF Q62702-F456 Q62702-F457 103MHz 102mA zo 103 ma BFT66 BFt 65 BFT 24 045912E Q62702-F456 RI-60 Q62702-F457 BFt 66 BFT67

    transistor buv 90

    Abstract: BCY 85 Q60203-Y66 BCY 66
    Text: N PN -Transistor fü r rauscharm e N F -V o rs tu fe n BCY 66 BCY 66 ist ein epitaktischer NPN-Silizium-Planar-Transistor im Gehäuse 18 A3 DIN 41876 TO-18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor ist für besonders rauscharme NF-Vorstufen vorgesehen. (Komplementärtransistor dazu B C Y 67).


    OCR Scan     		PDF Q60203-Y66 transistor buv 90 BCY 85 Q60203-Y66 BCY 66

    2SA989

    Abstract: 2SA969 2SC2239
    Text: AOK AOK Semiconductor Product Specification 2SA969 Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Complement to type 2SC2239 • High breakdown votage APPLICATIONS • Power amplifier applications • Driver stage amplifier applications


    OCR Scan     		PDF 2SA969 2SC2239 500mA; 500mA 100mA 2SA989 2SC2239