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    TO-5 METAL CASE FOR TRANSISTOR Search Results

    TO-5 METAL CASE FOR TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TO-5 METAL CASE FOR TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSS44

    Abstract: P008B
    Text: BSS44 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A.


    Original     		PDF BSS44 BSS44 P008B

    BSS44

    Abstract: No abstract text available
    Text: BSS44  SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A.


    Original     		PDF BSS44 BSS44

    BSS44

    Abstract: No abstract text available
    Text: BSS44 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A.


    Original     		PDF BSS44 BSS44

    P008B

    Abstract: "PNP Transistor" BSS44
    Text: BSS44 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A.


    Original     		PDF BSS44 BSS44 P008B "PNP Transistor"

    bss44

    Abstract: No abstract text available
    Text: BSS44 SILICON NPN TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A. TO-39 INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF BSS44 BSS44

    BSS44

    Abstract: No abstract text available
    Text: BSS44 SILICON NPN TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A. TO-39


    Original     		PDF BSS44 BSS44

    Untitled

    Abstract: No abstract text available
    Text: TYPE 2N118 N-P-N GROWN-JUNCTION SILICON TRANSISTOR BULLETIN NO. DL-S 5 8 8 9 7 , MARCH 1 9 5 8 18 to 40 beta spread Specifically desigaed for high gaia at high teaiperatures mechanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grains.


    OCR Scan     		PDF 2N118 X10-6

    Untitled

    Abstract: No abstract text available
    Text: BSS44 SILICON PNP TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A. INTERNAL SCHEMATIC DIAGRAM


    OCR Scan     		PDF BSS44 BSS44 P008B

    2N118

    Abstract: X10-4 I15-0 ScansUX7
    Text: TYPE 2N118 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T IN N O . D L -S 5 8 8 9 7 , M A R C H 1 9 5 8 18 to 4 0 beta sprawl SpedficaHy designa i for Ugh gaia at htgii t— porat— s mochanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.


    OCR Scan     		PDF 2N118 X10-4 7S222 I15-0 ScansUX7

    TRANSISTOR b 772 p

    Abstract: bfw 16 transistor BFW 72 TRANSISTOR BFW 16
    Text: E5C D • fi235bQS 0004725 1 H S I E 6 NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF BFW 16 A is an epitaxial NPN silicon planar RF transistor In TO 39 metal case 5 C 3 DIN 41873 intended for general applications up to the GHz range, e.g. for


    OCR Scan     		PDF fi235bQS Q62702-F319 C--12 23SbQS Q0QM727 BFW16A TRANSISTOR b 772 p bfw 16 transistor BFW 72 TRANSISTOR BFW 16

    2N117

    Abstract: 2n117 texas
    Text: TYPE 2N117 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N N O . O L -S 5 8 8 9 6 , M A R C H 19S8 9 to 20 beta spread Specifically designed for high gain at high temperatures mechanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.


    OCR Scan     		PDF 2N117 2n117 texas

    BCY65

    Abstract: BCY65-VIII BCY65-IX BCY65-VII BCY65IX
    Text: BCY65 T " 3 5 '- / I PHILIPS INTERNATIONAL SbE D 7110ÖSb DDM21D2 T Sü « P H I N SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in TO-18 metal envelope with the collector connected to the case and designed for use in amplifier and switching applications.


    OCR Scan     		PDF BCY65 T-35-- 7110flSb DDM21D2 BCY65-VII 195S2; BCY65 BCY65-VIII BCY65-IX BCY65-VII BCY65IX

    2N120

    Abstract: ScansUX7
    Text: TYPE 2N120 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N N O . D L-S 5 8900, M A R C H 1958 76 to 333 beta spread Specifically designed for high gain at high temperatures mechanical d a ta Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.


    OCR Scan     		PDF 2N120 ScansUX7

    2N336

    Abstract: No abstract text available
    Text: TYPE 2N336 N-P-N GROWN JUNCTION SILICON TRANSISTOR B U L L E T I N N O . D L - S 5 9 1 0 3 9 , M A R C H 1959 Beta From 76 to 333 Specifically designed for high gain at high temperatures mechanical data Welded case with glass-to-metal hermetic seal between case and leads. L nit weight is approximately


    OCR Scan     		PDF 2N336

    bfw 106 c

    Abstract: BFW16 Q62702-F319 transistor BFW 10 bfw16a
    Text: E5C D fi235bQ5 Q0047ES 1 H S I E G • NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF ^^-'31-2.3 BFW 16 A is an epitaxial NPN silicon planar RF transistor in TO 39 metal case 5 C 3 DIN 41 87 3 intended for general applications up to the GHz range, e.g. for


    OCR Scan     		PDF fi235bQ5 Q0047ES Q62702-F319 23SbOS 00Q4727 BFW16 bfw 106 c Q62702-F319 transistor BFW 10 bfw16a

    Untitled

    Abstract: No abstract text available
    Text: ¿57 7 ^5 3 7 005fii4fl5 T tm r" P 3 3 - 1 5 BDY57 BDY58 SGS-THOMSON iLiCTËMOtSS HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTORS S Q S-THOMSO DESCRIPTION The BDY57 and BDY58 are silicon multiepitaxial planar NPN transistors in Jedec TO-3 metal case, intended for use in switching and linear applications


    OCR Scan     		PDF 005fii4fl5 BDY57 BDY58 BDY57 BDY58

    Transistor 5331

    Abstract: BSV16 BSV17 BSV17-10 bsv16-16 BSV16-10 BSV15 BSV15-10 Silicon Epitaxial Planar Transistor philips
    Text: I I N AMER PHIL I P S / D I S C R E T E t.'ÎE J> 002707b 341 I IAPX BSV15 to 17 ^ 5 3 ^ 3 1 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-39 metal envelopes with the collector connected to the case. These transistors are intended for general industrial applications.


    OCR Scan     		PDF BSV15 BSV15â BSV16â BSV17â BSV15; BSV16; Transistor 5331 BSV16 BSV17 BSV17-10 bsv16-16 BSV16-10 BSV15-10 Silicon Epitaxial Planar Transistor philips

    BSX46

    Abstract: BSX45 Transistor BSX45-10 Transistor BSX45 BSX47 BSX47-10 IEC134 Z8239 silicon planar epitaxial transistors
    Text: B S X 4 5 to 47 _ P H IL IP S INTERNATIO N AL 5bE D 711002b T - * 7 - 2 3 _ OGMEHOb 3 4 e! « P H I N SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes with the collector connected to the case. These transistors are intended for general industrial applications.


    OCR Scan     		PDF BSX45to 711DflSb BSX45 BSX46 BSX47 BSX45â BSX45- BSX46â BSX46- BSX47â Transistor BSX45-10 Transistor BSX45 BSX47 BSX47-10 IEC134 Z8239 silicon planar epitaxial transistors

    2N333

    Abstract: ScansUX7
    Text: TYPE 2N333 N-P-N G R O W N -JU N C TIO N SILICON TRANSISTOR B U L L E T I N N O . D L -S 5 9 1 0 3 6 , M A R C H 1960 Bata From 18 to 40 Specifically designed for high gain at high temperatures •Mchanleal data Welded case with glass-to-metal hermetic seal between case and leads. Unit weight is approximately


    OCR Scan     		PDF 2N333 ScansUX7

    BSX45A

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL B S X 4 5 to 47 _ T - z y - z z _ 711DÖSb DGMEHÜb 3MT « P H I N SbE D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in T O -39 metal envelopes w ith the collector connected to the case. These transistors are intended for general industrial applications.


    OCR Scan     		PDF BSX45 BSX46 BSX47 BSX46â BSX45 7110fl2b 7Z82399 Fig-13 BSX45A

    bsx46

    Abstract: bsx45
    Text: 3GE D • 7 ^5 ^ 3 7 ooaiobs 3 ■ /IT SGS-THOMSON ^ 7# . S G BSX45 BSX46 S-THOMSON MEDIUM POWER AMPLIFIERS DESCRIPTION The BSX45 and BSX46 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, inten­ ded for use in medium power general industrial ap­


    OCR Scan     		PDF BSX45 BSX46 BSX46 BSX45-BSX46 BSX45-BSX46 QQ31Qbö T-33-05

    2N4391

    Abstract: 2n4393 2N4392 2N 4391 NS2N
    Text: 7 1 1 0 0 5 b O D h ö D ? 1* 50b • P H I N 2N4391 to 4393 y v N-CHANNEL FETS Silicon symmetrical n-channel depletion type junction field-effect transistors in TO -18 metal envelopes w ith the gate connected to the case. The transistors are intended for low power, chopper or switching,


    OCR Scan     		PDF 711005b 2N4391 0Gbfl077 2N4392 2N4393 2N 4391 NS2N

    bux41n

    Abstract: No abstract text available
    Text: rZ ^ 7 J S G S -T H O M S O N 5 L iO T Q K S # BUX41N HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESCRIPTIO N The BUX41N is a silicon multiepitaxial planar NPN transistor in Jedec TO-3 metal case, intented for use in switching and linear applications in military


    OCR Scan     		PDF BUX41N BUX41N

    BDY92

    Abstract: No abstract text available
    Text: r Z Z SGS-THOMSON ^ 7# 5 BDY90/1/2 HIGH CURRENT, HIGH SPEED TRANSISTORS D E S C R IP T IO N The BDY90, BDY91, BDY92 are silicon multiepitaxial planar NPN transistors in Jedec TO-3 metal case intended for use in switching and linear appli­ cations in military and industrial equipment.


    OCR Scan     		PDF BDY90/1/2 BDY90, BDY91, BDY92