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    TO-262 MOSFET Search Results

    TO-262 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    TO-262 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SSI5N60A

    Abstract: FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3
    Text: Discrete MOSFET TO-262 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-262(I2PAK) N-Channel ISL9N303AS3 30 Single 0.0032 0.005 - - 61 75 215 HUF75345S3 55 Single 0.007 -


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    O-262 O-262 ISL9N303AS3 HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI30N06 SSI5N60A FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF3708/3708S/3708L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power D2Pak IRF3708S TO-220AB IRF3708 TO-262 IRF3708L


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    IRF3708/3708S/3708L IRF3708S O-220AB IRF3708 O-262 IRF3708L EIA-418. O-220AB PDF

    d1740

    Abstract: NP88N04NUG
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N04NUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP88N04NUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP88N04NUG TO-262


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    NP88N04NUG NP88N04NUG O-262 O-262) d1740 PDF

    mosfet k 61 y1

    Abstract: AN1001 IRFB42N20D IRFS42N20D IRFSL42N20D m 60 n 03 g10
    Text: PD - 94114 PROVISIONAL IRFB42N20D IRFS42N20D IRFSL42N20D SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS on max ID 200V 0.055Ω 42.6A D2Pak IRFS42N20D TO-262 IRFSL42N20D Benefits l Low Gate-to-Drain Charge to Reduce


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    IRFB42N20D IRFS42N20D IRFSL42N20D O-262 AN1001) O-220AB mosfet k 61 y1 AN1001 IRFB42N20D IRFS42N20D IRFSL42N20D m 60 n 03 g10 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFB23N15D IRFS23N15D IRFSL23N15D TO-220AB IRFB23N15D D2Pak IRFS23N15D TO-262 IRFSL23N15D Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See


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    IRFB23N15D IRFS23N15D IRFSL23N15D O-220AB O-262 AN1001) O-220AB PDF

    5n50 mosfet

    Abstract: 5n50 data by 476 diode 5N50G-TN3-R UTC5N50 5N50G-T2Q-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET 1 TO-262 „ DESCRIPTION The UTC 5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the


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    O-262 O-220F O-252 QW-R502-476 5n50 mosfet 5n50 data by 476 diode 5N50G-TN3-R UTC5N50 5N50G-T2Q-T PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFB3207 IRFS3207 IRFSL3207 D2Pak IRFS3207 TO-220AB IRFB3207 TO-262 IRFSL3207 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits


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    IRFB3207 IRFS3207 IRFSL3207 IRFS3207 O-220AB IRFB3207 O-262 O-220 EIA-418. PDF

    IXTI76N25T

    Abstract: IXTP76N25T IXTQ76N25T 2ZAO0732373 76N25T DIODE 76A t244
    Text: Preliminary Technical Information Trench Gate Power MOSFET VDSS ID25 IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T G Typical avalanche BV = 300V TO-247 IXTH S (TAB) G TO-262 (IXTI) G D S (TAB) D TO-220 (IXTP) Test Conditions VDSS VDGR TJ = 25°C to 150°C


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    IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T O-247 O-262 O-263 O-220 76N25T IXTP76N25T IXTQ76N25T 2ZAO0732373 DIODE 76A t244 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF2807S IRF2807L Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l TO-262 IRF2807L D2Pak IRF2807S l Advanced MOSFETs from International Rectifier utilize advanced processing techniques to achieve


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    IRF2807S IRF2807L O-262 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN8586A 2SJ661 P-Channel Power MOSFET http://onsemi.com –60V, –38A, 39mΩ, TO-262-3L/TO-263-2L Features • • ON-resistance RDS on 1=29.5mΩ(typ.) 4V drive • Input capacitance Ciss=4360pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C


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    EN8586A 2SJ661 O-262-3L/TO-263-2L 4360pF PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET  TO-220F 1 1 TO-220F1 TO-262 1 1 TO-251 FEATURES * R DS ON = 5.0Ω @ V GS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (C RSS = typical 5.0 pF)


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    O-220F O-220F1 O-262 O-251 O-220 QW-R502-370 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220  TO-220F1 1 1 1 TO-220F2 TO-251 1 1 TO-262 FEATURES * R DS ON = 2.5Ω @V GS = 10 V * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness


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    O-220 O-220F1 O-220F2 O-251 O-262 O-220F QW-R502-061. PDF

    AN-994

    Abstract: IRL3715ZCL IRL3715ZCS 95220
    Text: PD - 95220 IRL3715ZCSPbF IRL3715ZCLPbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free HEXFET Power MOSFET VDSS RDS on max 11mΩ 7.0nC D2Pak IRL3715ZCS TO-262 IRL3715ZCL 20V Benefits l Low RDS(on) at 4.5V VGS


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    IRL3715ZCSPbF IRL3715ZCLPbF IRL3715ZCS O-262 IRL3715ZCL AN-994. AN-994 IRL3715ZCL IRL3715ZCS 95220 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN8054A 2SK3816 N-Channel Power MOSFET http://onsemi.com 60V, 40A, 26mΩ, TO-262-3L/TO-263-2L Features • • • ON-resistance RDS on 1=20mΩ(typ.) Input capacitance Ciss=1780pF(typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25°C


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    EN8054A 2SK3816 O-262-3L/TO-263-2L 1780pF 2SK3816re PDF

    80547

    Abstract: No abstract text available
    Text: Ordering number : EN8054A 2SK3816 N-Channel Power MOSFET http://onsemi.com 60V, 40A, 26mΩ, TO-262-3L/TO-263-2L Features • • • ON-resistance RDS on 1=20mΩ(typ.) Input capacitance Ciss=1780pF(typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25°C


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    EN8054A 2SK3816 O-262-3L/TO-263-2L 1780pF 2SK3816re 80547 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF640N IRF640NS IRF640NL l l l l l l l TO-220AB IRF640N Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D2Pak IRF640NS TO-262 IRF640NL Description


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    IRF640N IRF640NS IRF640NL O-220AB O-262 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: AUIRFS3607 AUIRFSL3607 D2Pak AUIRFS3607 Features l l l l l l l TO-262 AUIRFSL3607 Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *


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    AUIRFS3607 AUIRFSL3607 O-262 EIA-418. PDF

    IRF Power MOSFET code marking

    Abstract: FET marking code AN-994 IRL3715ZCL IRL3715ZCS IRL3715ZCSPBF
    Text: PD - 95220 IRL3715ZCSPbF IRL3715ZCLPbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free HEXFET Power MOSFET VDSS RDS on max 11mΩ 7.0nC D2Pak IRL3715ZCS TO-262 IRL3715ZCL 20V Benefits l Low RDS(on) at 4.5V VGS


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    IRL3715ZCSPbF IRL3715ZCLPbF IRL3715ZCS O-262 IRL3715ZCL AN-994. IRF Power MOSFET code marking FET marking code AN-994 IRL3715ZCL IRL3715ZCS IRL3715ZCSPBF PDF

    70N06

    Abstract: Mosfet 70n06 70N06G
    Text: UNISONIC TECHNOLOGIES CO., LTD 70N06 Power MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET „ 1 TO-262 FEATURES * RDS ON = 15mΩ@VGS = 10 V * Ultra low gate charge ( typical 90 nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability


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    70N06 O-220 70N06 O-262 O-263 70N06L-TA3-T 70N06G-TA3-T 70N06L-T2t QW-R502-089 Mosfet 70n06 70N06G PDF

    IRF530S

    Abstract: IRL3103L IRL3715ZCL IRL3715ZCS
    Text: PD - 94783 IRL3715ZCS IRL3715ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET VDSS RDS on max 11m: 7.0nC D2Pak IRL3715ZCS TO-262 IRL3715ZCL 20V Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance


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    IRL3715ZCS IRL3715ZCL O-262 AN-994. IRF530S IRL3103L IRL3715ZCL IRL3715ZCS PDF

    Untitled

    Abstract: No abstract text available
    Text: STB80NF03L-04 N-CHANNEL 30V - 0.0035 Ω - 80A TO-262/TO-263 STripFET POWER MOSFET PRELIMINARY DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STB80NF03L-04 30 V <0.004 Ω 80 A TYPICAL RDS(on) = 0.0035Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED


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    STB80NF03L-04 O-262/TO-263 O-262) O-263) O-262 O-263 PDF

    IRF640 SILICONIX

    Abstract: No abstract text available
    Text: IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D D2PAK (TO-263) I2PAK (TO-262)


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    IRF640S, IRF640L, SiHF640S SiHF640L O-262) O-263) 12-Mar-07 IRF640 SILICONIX PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFZ44NS IRFZ44NL TO-263 TO-262 l l l l l l Advanced Process Technology Surface Mount IRFZ44NS Low-profile through-hole (IRFZ44NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description The D2Pak is a surface mount power package capable of


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    IRFZ44NS IRFZ44NL O-263 O-262 IRFZ44NS) IRFZ44NL) PDF

    Untitled

    Abstract: No abstract text available
    Text: STB80NF55-06 N - CHANNEL 55V - 0.005^ - 80A TO-262/TO-263 _ STripFET POWER MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id STB 80N F55-06 55 V < 0.0065 Q. 80 A • . . . TYPICAL R D S (on) = 0.005 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED


    OCR Scan
    STB80NF55-06 O-262/TO-263 F55-06 O-262) O-263) O-262 O-263 P011P6/E PDF