SSI5N60A
Abstract: FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3
Text: Discrete MOSFET TO-262 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-262(I2PAK) N-Channel ISL9N303AS3 30 Single 0.0032 0.005 - - 61 75 215 HUF75345S3 55 Single 0.007 -
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O-262
O-262
ISL9N303AS3
HUF75345S3
HUF75333S3
FQI85N06
FQI65N06
FQI55N06
FQI50N06
FQI30N06
SSI5N60A
FQI13N06
FQI20N06
FQI30N06
FQI50N06
FQI55N06
FQI65N06
FQI85N06
HUF75333S3
HUF75345S3
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Untitled
Abstract: No abstract text available
Text: IRF3708/3708S/3708L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power D2Pak IRF3708S TO-220AB IRF3708 TO-262 IRF3708L
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IRF3708/3708S/3708L
IRF3708S
O-220AB
IRF3708
O-262
IRF3708L
EIA-418.
O-220AB
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d1740
Abstract: NP88N04NUG
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N04NUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP88N04NUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP88N04NUG TO-262
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NP88N04NUG
NP88N04NUG
O-262
O-262)
d1740
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mosfet k 61 y1
Abstract: AN1001 IRFB42N20D IRFS42N20D IRFSL42N20D m 60 n 03 g10
Text: PD - 94114 PROVISIONAL IRFB42N20D IRFS42N20D IRFSL42N20D SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS on max ID 200V 0.055Ω 42.6A D2Pak IRFS42N20D TO-262 IRFSL42N20D Benefits l Low Gate-to-Drain Charge to Reduce
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IRFB42N20D
IRFS42N20D
IRFSL42N20D
O-262
AN1001)
O-220AB
mosfet k 61 y1
AN1001
IRFB42N20D
IRFS42N20D
IRFSL42N20D
m 60 n 03 g10
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Untitled
Abstract: No abstract text available
Text: IRFB23N15D IRFS23N15D IRFSL23N15D TO-220AB IRFB23N15D D2Pak IRFS23N15D TO-262 IRFSL23N15D Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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IRFB23N15D
IRFS23N15D
IRFSL23N15D
O-220AB
O-262
AN1001)
O-220AB
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5n50 mosfet
Abstract: 5n50 data by 476 diode 5N50G-TN3-R UTC5N50 5N50G-T2Q-T
Text: UNISONIC TECHNOLOGIES CO., LTD 5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET 1 TO-262 DESCRIPTION The UTC 5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the
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O-262
O-220F
O-252
QW-R502-476
5n50 mosfet
5n50
data by 476 diode
5N50G-TN3-R
UTC5N50
5N50G-T2Q-T
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Untitled
Abstract: No abstract text available
Text: IRFB3207 IRFS3207 IRFSL3207 D2Pak IRFS3207 TO-220AB IRFB3207 TO-262 IRFSL3207 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
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IRFB3207
IRFS3207
IRFSL3207
IRFS3207
O-220AB
IRFB3207
O-262
O-220
EIA-418.
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IXTI76N25T
Abstract: IXTP76N25T IXTQ76N25T 2ZAO0732373 76N25T DIODE 76A t244
Text: Preliminary Technical Information Trench Gate Power MOSFET VDSS ID25 IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T G Typical avalanche BV = 300V TO-247 IXTH S (TAB) G TO-262 (IXTI) G D S (TAB) D TO-220 (IXTP) Test Conditions VDSS VDGR TJ = 25°C to 150°C
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IXTA76N25T
IXTH76N25T
IXTI76N25T
IXTP76N25T
IXTQ76N25T
O-247
O-262
O-263
O-220
76N25T
IXTP76N25T
IXTQ76N25T
2ZAO0732373
DIODE 76A
t244
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Untitled
Abstract: No abstract text available
Text: IRF2807S IRF2807L Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l TO-262 IRF2807L D2Pak IRF2807S l Advanced MOSFETs from International Rectifier utilize advanced processing techniques to achieve
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IRF2807S
IRF2807L
O-262
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN8586A 2SJ661 P-Channel Power MOSFET http://onsemi.com –60V, –38A, 39mΩ, TO-262-3L/TO-263-2L Features • • ON-resistance RDS on 1=29.5mΩ(typ.) 4V drive • Input capacitance Ciss=4360pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C
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EN8586A
2SJ661
O-262-3L/TO-263-2L
4360pF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET TO-220F 1 1 TO-220F1 TO-262 1 1 TO-251 FEATURES * R DS ON = 5.0Ω @ V GS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (C RSS = typical 5.0 pF)
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O-220F
O-220F1
O-262
O-251
O-220
QW-R502-370
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220 TO-220F1 1 1 1 TO-220F2 TO-251 1 1 TO-262 FEATURES * R DS ON = 2.5Ω @V GS = 10 V * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness
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O-220
O-220F1
O-220F2
O-251
O-262
O-220F
QW-R502-061.
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AN-994
Abstract: IRL3715ZCL IRL3715ZCS 95220
Text: PD - 95220 IRL3715ZCSPbF IRL3715ZCLPbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free HEXFET Power MOSFET VDSS RDS on max 11mΩ 7.0nC D2Pak IRL3715ZCS TO-262 IRL3715ZCL 20V Benefits l Low RDS(on) at 4.5V VGS
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IRL3715ZCSPbF
IRL3715ZCLPbF
IRL3715ZCS
O-262
IRL3715ZCL
AN-994.
AN-994
IRL3715ZCL
IRL3715ZCS
95220
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN8054A 2SK3816 N-Channel Power MOSFET http://onsemi.com 60V, 40A, 26mΩ, TO-262-3L/TO-263-2L Features • • • ON-resistance RDS on 1=20mΩ(typ.) Input capacitance Ciss=1780pF(typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25°C
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EN8054A
2SK3816
O-262-3L/TO-263-2L
1780pF
2SK3816re
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80547
Abstract: No abstract text available
Text: Ordering number : EN8054A 2SK3816 N-Channel Power MOSFET http://onsemi.com 60V, 40A, 26mΩ, TO-262-3L/TO-263-2L Features • • • ON-resistance RDS on 1=20mΩ(typ.) Input capacitance Ciss=1780pF(typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25°C
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EN8054A
2SK3816
O-262-3L/TO-263-2L
1780pF
2SK3816re
80547
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Untitled
Abstract: No abstract text available
Text: IRF640N IRF640NS IRF640NL l l l l l l l TO-220AB IRF640N Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D2Pak IRF640NS TO-262 IRF640NL Description
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IRF640N
IRF640NS
IRF640NL
O-220AB
O-262
O-220
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Untitled
Abstract: No abstract text available
Text: AUIRFS3607 AUIRFSL3607 D2Pak AUIRFS3607 Features l l l l l l l TO-262 AUIRFSL3607 Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
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AUIRFS3607
AUIRFSL3607
O-262
EIA-418.
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IRF Power MOSFET code marking
Abstract: FET marking code AN-994 IRL3715ZCL IRL3715ZCS IRL3715ZCSPBF
Text: PD - 95220 IRL3715ZCSPbF IRL3715ZCLPbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free HEXFET Power MOSFET VDSS RDS on max 11mΩ 7.0nC D2Pak IRL3715ZCS TO-262 IRL3715ZCL 20V Benefits l Low RDS(on) at 4.5V VGS
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IRL3715ZCSPbF
IRL3715ZCLPbF
IRL3715ZCS
O-262
IRL3715ZCL
AN-994.
IRF Power MOSFET code marking
FET marking code
AN-994
IRL3715ZCL
IRL3715ZCS
IRL3715ZCSPBF
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70N06
Abstract: Mosfet 70n06 70N06G
Text: UNISONIC TECHNOLOGIES CO., LTD 70N06 Power MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 TO-262 FEATURES * RDS ON = 15mΩ@VGS = 10 V * Ultra low gate charge ( typical 90 nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability
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70N06
O-220
70N06
O-262
O-263
70N06L-TA3-T
70N06G-TA3-T
70N06L-T2t
QW-R502-089
Mosfet 70n06
70N06G
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IRF530S
Abstract: IRL3103L IRL3715ZCL IRL3715ZCS
Text: PD - 94783 IRL3715ZCS IRL3715ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET VDSS RDS on max 11m: 7.0nC D2Pak IRL3715ZCS TO-262 IRL3715ZCL 20V Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance
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IRL3715ZCS
IRL3715ZCL
O-262
AN-994.
IRF530S
IRL3103L
IRL3715ZCL
IRL3715ZCS
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Untitled
Abstract: No abstract text available
Text: STB80NF03L-04 N-CHANNEL 30V - 0.0035 Ω - 80A TO-262/TO-263 STripFET POWER MOSFET PRELIMINARY DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STB80NF03L-04 30 V <0.004 Ω 80 A TYPICAL RDS(on) = 0.0035Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED
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STB80NF03L-04
O-262/TO-263
O-262)
O-263)
O-262
O-263
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IRF640 SILICONIX
Abstract: No abstract text available
Text: IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D D2PAK (TO-263) I2PAK (TO-262)
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IRF640S,
IRF640L,
SiHF640S
SiHF640L
O-262)
O-263)
12-Mar-07
IRF640 SILICONIX
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Untitled
Abstract: No abstract text available
Text: IRFZ44NS IRFZ44NL TO-263 TO-262 l l l l l l Advanced Process Technology Surface Mount IRFZ44NS Low-profile through-hole (IRFZ44NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description The D2Pak is a surface mount power package capable of
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IRFZ44NS
IRFZ44NL
O-263
O-262
IRFZ44NS)
IRFZ44NL)
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Untitled
Abstract: No abstract text available
Text: STB80NF55-06 N - CHANNEL 55V - 0.005^ - 80A TO-262/TO-263 _ STripFET POWER MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id STB 80N F55-06 55 V < 0.0065 Q. 80 A • . . . TYPICAL R D S (on) = 0.005 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED
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STB80NF55-06
O-262/TO-263
F55-06
O-262)
O-263)
O-262
O-263
P011P6/E
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