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    TO-252 P CHANNEL VGS 12V Search Results

    TO-252 P CHANNEL VGS 12V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TO-252 P CHANNEL VGS 12V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KSMD5P20 / KSMU5P20 200V P-Channel MOSFET TO-252 TO-251 Features • • • • • -3.7A, -200V, RDS on = 1.4Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested General Description These P-Channel enhancement mode power field effect


    Original     		PDF KSMD5P20 KSMU5P20 O-252 O-251 -200V, 30TYP

    Untitled

    Abstract: No abstract text available
    Text: KSMD1P50 / KSMU1P50 500V P-Channel MOSFET TO-252 TO-251 Features • • • • • • -1.2A, -500V, RDS on = 10.5Ω @VGS = -10 V Low gate charge ( typical 11 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability


    Original     		PDF KSMD1P50 KSMU1P50 O-252 O-251 -500V, 30TYP

    Untitled

    Abstract: No abstract text available
    Text: KSMD2P40 / KSMU2P40 400V P-Channel MOSFET TO-252 TO-251 Features • • • • • • -1.56A, -400V, RDS on = 6.5Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability


    Original     		PDF KSMD2P40 KSMU2P40 O-252 O-251 -400V, 30TYP

    Untitled

    Abstract: No abstract text available
    Text: KSMD4P25 / KSMU4P25 250V P-Channel MOSFET TO-252 TO-251 Features • • • • • • -3.1A, -250V, RDS on = 2.1Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 10.3 pF) Fast switching 100% avalanche tested Improved dv/dt capability


    Original     		PDF KSMD4P25 KSMU4P25 O-252 O-251 -250V, 30TYP

    Untitled

    Abstract: No abstract text available
    Text: KSMD12P10 / KSMU12P10 100V P-Channel MOSFET TO-252 TO-251 Features • • • • • • • -9.4A, -100V, RDS on = 0.29Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability


    Original     		PDF KSMD12P10 KSMU12P10 O-252 O-251 -100V,

    Untitled

    Abstract: No abstract text available
    Text: KSMD11P06 / KSMU11P06 60V P-Channel MOSFET TO-252 Features • • • • • • TO-251 -9.4A, -60V, RDS on = 0.185Ω @VGS = -10 V Low gate charge ( typical 13 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability


    Original     		PDF KSMD11P06 KSMU11P06 O-252 O-251 30TYP

    Untitled

    Abstract: No abstract text available
    Text: KSMD5P10 / KSMU5P10 100V P-Channel MOSFET TO-252 Features • • • • • • • TO-251 -3.6A, -100V, RDS on = 1.05Ω @VGS = -10 V Low gate charge ( typical 6.3 nC) Low Crss ( typical 18 pF) Fast switching 100% avalanche tested Improved dv/dt capability


    Original     		PDF KSMD5P10 KSMU5P10 O-252 O-251 -100V,

    Untitled

    Abstract: No abstract text available
    Text: KSMD3P50 / KSMU3P50 500V P-Channel MOSFET TO-252 TO-251 Features • • • • • • -2.1A, -500V, RDS on = 4.9Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability


    Original     		PDF KSMD3P50 KSMU3P50 O-252 O-251 -500V, Abso02 30TYP

    Untitled

    Abstract: No abstract text available
    Text: KSMD2P25 / KSMU2P25 250V P-Channel MOSFET TO-252 Features • • • • • • TO-251 -2.0A, -250V, RDS on = 4.0Ω @VGS = -10 V Low gate charge ( typical 6.5 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability


    Original     		PDF KSMD2P25 KSMU2P25 O-252 O-251 -250V, 30TYP

    Untitled

    Abstract: No abstract text available
    Text: KSMD17P06 / KSMU17P06 60V P-Channel MOSFET TO-252 TO-251 Features • • • • • • -12A, -60V, RDS on = 0.135Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 80 pF) Fast switching 100% avalanche tested Improved dv/dt capability


    Original     		PDF KSMD17P06 KSMU17P06 O-252 O-251 30TYP

    Untitled

    Abstract: No abstract text available
    Text: KSMD4P40 / KSMU4P40 400V P-Channel MOSFET TO-252 Features • • • • • • TO-251 -2.7A, -400V, RDS on = 3.1Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description


    Original     		PDF KSMD4P40 KSMU4P40 O-252 O-251 -400V, 30TYP

    Untitled

    Abstract: No abstract text available
    Text: KSMD8P10TM_F085 100V P-Channel MOSFET TO-252 Features • • • • • • • • -6.6A, -100V, RDS on = 0.53Ω @VGS = -10 V Low gate charge ( typical 12 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability Qualified to AEC Q101


    Original     		PDF KSMD8P10TM O-252 -100V,

    Untitled

    Abstract: No abstract text available
    Text: KSMD7P06 / KSMU7P06 60V P-Channel MOSFET Features • • • • • • TO-252 -5.4A, -60V, RDS on = 0.45Ω @VGS = -10 V Low gate charge ( typical 6.3 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability TO-251 General Description


    Original     		PDF KSMD7P06 KSMU7P06 O-252 O-251 30TYP

    Untitled

    Abstract: No abstract text available
    Text: KSMD6P25 / KSMU6P25 250V P-Channel MOSFET TO-252 Features • • • • • • TO-251 -4.7A, -250V, RDS on = 1.1Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description


    Original     		PDF KSMD6P25 KSMU6P25 O-252 O-251 -250V, 30TYP

    1E14

    Abstract: 2E12 FRK254D FRK254H FRK254R
    Text: FRK254D, FRK254R, FRK254H 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 20A, 250V, RDS on = 0.170Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRK254D, FRK254R, FRK254H O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD 1E14 2E12 FRK254D FRK254H FRK254R

    IRF P CHANNEL MOSFET 200V 20A

    Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
    Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω


    Original     		PDF RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252

    SI3456DV

    Abstract: SI4420DY SI4874DY SUD50N03 lmt zener
    Text: Application Report SLVA135 - MAY 2003 A Step-By-Step Design Approach to TPS2300/01/11/20/21/30/31 Hotswap Controllers Heping Dai PMP Systems Power ABSTRACT The TPS2300/01/10/11/20/21/30/31 hotswap controllers allow safe board insertion and removal from a live backplane. With the current-sensing resistor RSENSE and the


    Original     		PDF SLVA135 TPS2300/01/11/20/21/30/31 TPS2300/01/10/11/20/21/30/31 TPS23xx SI3456DV SI4420DY SI4874DY SUD50N03 lmt zener

    Untitled

    Abstract: No abstract text available
    Text: FRK254D, FRK254R, FRK254H 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 20A, 250V, RDS on = 0.170Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRK254D, FRK254R, FRK254H O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD

    SEM 238

    Abstract: 1E14 2E12 FRK254D FRK254H FRK254R Rad Hard in Fairchild for MOSFET
    Text: FRK254D, FRK254R, FRK254H 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 20A, 250V, RDS on = 0.170Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRK254D, FRK254R, FRK254H O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD SEM 238 1E14 2E12 FRK254D FRK254H FRK254R Rad Hard in Fairchild for MOSFET

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    pj 72 diode

    Abstract: pj 49 diode pj 44 diode ic 7pin dip PWM Converter pj 89 diode 9v 200 ohm relay P248L VP0808 vp1550 pj 85 lv
    Text: Chapter S: Product Selector Guides Chapter Product Selector Guides 1. Hotswap Controller ICs/lnrush Current Limiters/Circuit Breaker IC s. 248 2. LED Driver IC s .


    OCR Scan     		PDF VP1550 VP2106 VP2110 VP2206 VP2450 VP3203 TC2320 -200V pj 72 diode pj 49 diode pj 44 diode ic 7pin dip PWM Converter pj 89 diode 9v 200 ohm relay P248L VP0808 pj 85 lv

    Untitled

    Abstract: No abstract text available
    Text: FLL400IP-3 _ FEATURES • • • • • L-Band Medium & High Power GaAs FET Push-Pull Configuration High Power Output: 35W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 2300 to 2500 MHz. Suitable for class A operation at 10V


    OCR Scan     		PDF FLL400IP-3 FLL400IP-3 FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: tyvvys / FRK254D, FRK254R, FRK254H S e m ico n d ucto r y 7 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 20A, 250V, RDS on = 0.170S1 TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		PDF FRK254D, FRK254R, FRK254H 170S1 O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD O-204AE

    CD 294

    Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
    Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package


    OCR Scan     		PDF FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet